公开(公告)号：US20180097055A1

公开(公告)日：2018-04-05

申请号：US15454096

申请日：2017-03-09

Applicant: STMicroelectronics S.r.l.

Inventor： Elisabetta Pizzi ,  Fabrizio Fausto Renzo Toia ,  Marco Marchesi ,  Vincenzo Palumbo

IPC: H01L49/02 ,  H01L23/64 ,  H01F27/28 ,  H01F27/245 ,  H01F41/04 ,  H01F41/02

Abstract: A dielectric structure extends over the substrate and a transformer is integrated in the dielectric structure. The transformed includes a first winding in the dielectric layer at a first height and a second winding in the dielectric layer at a second height greater than the first height. The first and second windings are magnetically coupleable to one another. A magnetic element is positioned in alignment with the first and second windings. In one implementation, the magnetic element underlies the first winding in a position between the substrate and the first winding. In another implementation, the magnetic element overlies the second winding.

公开(公告)号：US09935098B2

公开(公告)日：2018-04-03

申请号：US15279050

申请日：2016-09-28

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Vincenzo Palumbo ,  Elisabetta Pizzi

IPC: H01L21/02 ,  H01L27/02 ,  H01L49/02 ,  H01L23/522 ,  H01L23/00 ,  H01L21/768 ,  H01L21/283

CPC classification number: H01L27/0288 ,  H01L21/283 ,  H01L21/76883 ,  H01L23/48 ,  H01L23/481 ,  H01L23/5222 ,  H01L23/5223 ,  H01L23/5226 ,  H01L23/5227 ,  H01L24/48 ,  H01L24/49 ,  H01L28/60 ,  H01L2224/481 ,  H01L2224/48463 ,  H01L2224/49107 ,  H04L25/026

Abstract: An electronic device includes a semiconductor body and a dielectric layer extending over the semiconductor body. A galvanic isolation module includes a first metal region extending in the dielectric layer at a first height and a second metal region extending in the dielectric layer at a second height greater than the first height. The first and second metal regions are capacitively or magnetically coupleable together. The second metal region includes a side wall and a bottom wall coupled to one another through rounded surface portions.

公开(公告)号：US20150364249A1

公开(公告)日：2015-12-17

申请号：US14733009

申请日：2015-06-08

Applicant: STMicroelectronics S.r.l.

Inventor： Vincenzo Palumbo ,  Gabriella Ghidini ,  Enzo Carollo ,  Fabrizio Toia

IPC: H01F27/32 ,  H01F41/06 ,  H01F27/28

CPC classification number: H01F27/32 ,  H01F27/2804 ,  H01F27/323 ,  H01F41/063 ,  H01F2027/2809 ,  H01L23/5227 ,  H01L23/645 ,  H01L23/66 ,  H01L27/08 ,  H01L2223/64 ,  H01L2924/0002 ,  Y10T29/49021 ,  H01L2924/00

Abstract: An integrated transformer includes a primary winding and a secondary winding each having a spiral planar arrangement coils. A dielectric portion of dielectric material is interposed between the primary winding and the secondary winding. A field plate winding is electrically coupled with the primary winding. The field plate winding includes at least one field plate coil having a first lateral extension greater than a second lateral extension of a primary outer coil of the primary winding. The field plate coil is superimposed in plan view to the primary outer coil of the primary winding.

Abstract translation: 集成变压器包括初级绕组和次级绕组，每个绕组具有螺旋形平面布置线圈。 电介质材料的电介质部分介于初级绕组和次级绕组之间。 场板绕组与初级绕组电耦合。 场板绕组包括至少一个场板线圈，其具有大于初级绕组的初级外部线圈的第二横向延伸的第一横向延伸。 场平板线圈在平面图中叠加到初级绕组的初级外部线圈。

公开(公告)号：US09105568B2

公开(公告)日：2015-08-11

申请号：US14104934

申请日：2013-12-12

Applicant: STMicroelectronics S.r.l.

Inventor： Paolo Iuliano ,  Francesca Milanesi ,  Vincenzo Palumbo ,  Sonia Pirotta

IPC: H01L27/22 ,  H01L43/14 ,  G01R33/00 ,  H01L43/04 ,  H01L27/06

CPC classification number: H01L27/22 ,  G01R33/0052 ,  H01L27/0688 ,  H01L43/04 ,  H01L43/14

Abstract: A semiconductor device including: a semiconductor body having a first side and a second side opposite to one another; a first barrier element, which extends over the first side of the semiconductor body and is made of a first material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloy; a magnetic element, which extends over the first barrier layer and is made of a second material having magnetic properties, for example a ferromagnetic material; a second barrier element, which extends over the magnetic layer and is made of a third material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloys or compounds. The first and second barrier elements form a top encapsulating structure and a bottom encapsulating structure for the magnetic element.

Abstract translation: 一种半导体器件，包括：具有彼此相对的第一侧和第二侧的半导体本体; 第一屏障元件，其延伸在半导体本体的第一侧上，并且由构造成用作阻挡金属离子的第一材料制成，例如选自钛，钽，钛合金或化合物，钽合金; 磁性元件，其在第一阻挡层上延伸并且由具有磁性的第二材料制成，例如铁磁材料; 第二屏障元件，其在磁性层上延伸并由构成为用作阻挡金属离子的第三材料制成，例如选自钛，钽，钛合金或化合物，钽合金或化合物。 第一和第二屏障元件形成顶部封装结构和用于磁性元件的底部封装结构。

公开(公告)号：US20150001677A1

公开(公告)日：2015-01-01

申请号：US14309357

申请日：2014-06-19

Applicant: STMicroelectronics S.r.l.

Inventor： Vincenzo Palumbo ,  Mirko Venturato

IPC: H01L49/02

CPC classification number: H01L28/20 ,  G01R15/04 ,  H01L23/5225 ,  H01L23/5228 ,  H01L23/585 ,  H01L27/0207 ,  H01L27/0629 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/405 ,  H01L29/66681 ,  H01L29/7817 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes: a semiconductor substrate; a high-voltage first resistive structure which extends along a spiral path above the substrate and is separated from the substrate by a first dielectric layer; and a conductive shielding structure, including a plurality of first shielding strips, which are arranged in sequence along respective portions of the first resistive structure and are separated from the first resistive structure by a second dielectric layer.

Abstract translation: 半导体器件包括：半导体衬底; 高压第一电阻结构，其沿着衬底上方的螺旋路径延伸并且通过第一介电层与衬底分离; 以及导电屏蔽结构，包括多个第一屏蔽条，其沿着第一电阻结构的相应部分依次布置并且通过第二电介质层与第一电阻结构分离。