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11.
公开(公告)号:US20200156114A1
公开(公告)日:2020-05-21
申请号:US16684289
申请日:2019-11-14
Applicant: STMICROELECTRONICS S.R.L.
Inventor: Gabriele GATTERE , Carlo VALZASINA , Federico VERCESI , Giorgio ALLEGATO
Abstract: An ultrasonic MEMS acoustic transducer formed in a body of semiconductor material having first and second surfaces opposite to one another. A first cavity extends in the body and delimits at the bottom a sensitive portion, which extends between the first cavity and the first surface of the body. The sensitive portion houses a second cavity and forms a membrane that extends between the second cavity and the first surface of the body. An elastic supporting structure extends between the sensitive portion and the body and is suspended over the first cavity.
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12.
公开(公告)号:US20190090067A1
公开(公告)日:2019-03-21
申请号:US16128288
申请日:2018-09-11
Applicant: STMICROELECTRONICS S.R.L.
Inventor: Matteo PERLETTI , Federico VERCESI , Silvia ADORNO , Giorgio ALLEGATO
CPC classification number: H04R19/04 , B81B7/0029 , B81B2201/0257 , B81B2203/0127 , B81B2207/012 , B81C1/00309 , B81C1/00626 , B81C2201/014 , B81C2201/0198 , H04R1/086 , H04R1/2807 , H04R19/005 , H04R31/00 , H04R2201/003
Abstract: A method for manufacturing a filtering module comprising the steps of: forming a multilayer body comprising a filter layer of semiconductor material and having a thickness of less than 10 μm, a first structural layer coupled to a first side of the filter layer, and a second structural layer coupled to a second side, opposite to the first side, of the filter layer; forming a recess in the first structural layer, which extends throughout its thickness; removing selective portions, exposed through the recess, of the filter layer to form a plurality of openings, which extend throughout the thickness of the filter layer; and completely removing the second structural layer to connect fluidically the first and second sides of the filter layer, thus forming a filtering membrane designed to inhibit passage of contaminating particles.
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13.
公开(公告)号:US20240259734A1
公开(公告)日:2024-08-01
申请号:US18416751
申请日:2024-01-18
Applicant: STMICROELECTRONICS S.r.l.
Inventor: Federico VERCESI , Fabrizio CERINI , Silvia ADORNO
CPC classification number: H04R19/04 , H04R7/04 , H04R7/18 , H04R19/005 , H04R31/003 , H04R31/006 , H04R2201/003
Abstract: Capacitive, MEMS-type acoustic transducer, having a sound collection part and a transduction part. A substrate region surrounds a first chamber arranged in the sound collection part and open towards the outside; a fixed structure is coupled to the substrate region; a cap region is coupled to the fixed structure. A sensitive membrane is arranged in the sound collection part, is coupled to the fixed structure and faces the first chamber. A transduction chamber is arranged in the transduction part, hermetically closed with respect to the outside and accommodates a detection membrane. An articulated structure extends between the sensitive membrane and the detection membrane, through the walls of the transduction chamber. A fixed electrode faces and is capacitively coupled to the detection membrane. Conducive electrical connection regions extend above the substrate region, into the transduction chamber.
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14.
公开(公告)号:US20240154599A1
公开(公告)日:2024-05-09
申请号:US18505574
申请日:2023-11-09
Applicant: STMICROELECTRONICS S.r.l.
Inventor: Federico VERCESI , Lorenzo CORSO , Giorgio ALLEGATO , Gabriele GATTERE
CPC classification number: H03H9/1021 , B81B7/0038 , B81C1/00285 , H03H3/02 , H03H9/17 , B81B2201/0271 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81B2207/07 , B81C2201/0105 , B81C2203/0118 , H03H2003/022 , H03H2003/027 , H03H2009/155
Abstract: A microelectromechanical resonator device has: a main body, with a first surface and a second surface, opposite to one another along a vertical axis, and made of a first layer and a second layer, arranged on the first layer; a cap, having a respective first surface and a respective second surface, opposite to one another along the vertical axis, and coupled to the main body by bonding elements; and a piezoelectric resonator structure formed by: a mobile element, constituted by a resonator portion of the first layer, suspended in cantilever fashion with respect to an internal cavity provided in the second layer and moreover, on the opposite side, with respect to a housing cavity provided in the cap; a region of piezoelectric material, arranged on the mobile element on the first surface of the main body; and a top electrode, arranged on the region of piezoelectric material, the mobile element constituting a bottom electrode of the piezoelectric resonator structure.
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15.
公开(公告)号:US20240051817A1
公开(公告)日:2024-02-15
申请号:US18363599
申请日:2023-08-01
Applicant: STMICROELECTRONICS S.r.l.
Inventor: Federico VERCESI , Gabriele GATTERE , Giorgio ALLEGATO , Mikel AZPEITIA URQUIA , Alessandro DANEI
IPC: B81B7/00 , B81B7/02 , H03K17/975
CPC classification number: B81B7/0058 , B81B7/02 , H03K17/975 , H01H2231/028 , B81B2203/04
Abstract: A microelectromechanical button device is provided with a detection structure having: a substrate of semiconductor material with a front surface and a rear surface; a buried electrode arranged on the substrate; a mobile electrode, arranged in a structural layer overlying the substrate and elastically suspended above the buried electrode at a separation distance so as to form a detection capacitor; and a cap coupled over the structural layer and having a first main surface facing the structural layer and a second main surface that is designed to be mechanically coupled to a deformable portion of a case of an electronic apparatus of a portable or wearable type. The cap has, on its first main surface, an actuation portion arranged over the mobile electrode and configured to cause, in the presence of a pressure applied on the second main surface, a deflection of the mobile electrode and its approach to the buried electrode, with a consequent capacitive variation of the detection capacitor, which is indicative of an actuation of the microelectromechanical button device.
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16.
公开(公告)号:US20240010490A1
公开(公告)日:2024-01-11
申请号:US18334296
申请日:2023-06-13
Applicant: STMICROELECTRONICS S.r.l.
Inventor: Gabriele GATTERE , Francesco RIZZINI , Federico VERCESI
CPC classification number: B81B7/02 , B81C1/00198 , B81B2201/0235 , B81B2203/04 , B81B2203/033 , B81B2203/0307 , B81B2203/06 , B81B2207/015 , B81C2201/014 , B81C2203/0707
Abstract: The detection structure for a MEMS accelerometer is formed by a substrate; a first movable mass and a second movable mass which extend at a distance from each other, suspended on the substrate and which are configured to undergo a movement, with respect to the substrate, in response to an acceleration. The detection structure also has a first movable electrode integral with the first movable mass; a second movable electrode integral with the second movable mass; a first fixed electrode integral with the substrate and configured to form, with the first movable electrode, a first variable capacitor; and a second fixed electrode integral with the substrate and configured to form, with the second movable electrode, a second variable capacitor. The detection structure has an insulation region, of electrically insulating material, which is suspended on the substrate and extends between the first movable mass and the second movable mass.
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17.
公开(公告)号:US20240010489A1
公开(公告)日:2024-01-11
申请号:US18341565
申请日:2023-06-26
Applicant: STMICROELECTRONICS S.r.l.
Inventor: Manuel RIANI , Gabriele GATTERE , Federico VERCESI
CPC classification number: B81B3/0021 , B81C1/0015 , B81B2203/0118 , B81B2203/0307 , B81B2203/0315 , B81C2201/0109 , B81C2201/0133
Abstract: A MEMS device comprising: a semiconductor body defining a main cavity and forming an anchorage structure; and a first deformable structure having a first end and a second end that are opposite to one another along a first axis, the first deformable structure being fixed to the anchorage structure via the first end so as to be suspended over the main cavity. The second end is configured to oscillate, with respect to the anchorage structure, along a second axis. The first deformable structure comprises a main body having a first outer surface and a second outer surface, and a piezoelectric structure, which extends over the first outer surface. The main body comprises a bottom portion and a top portion that delimit along the second axis a first buried cavity aligned with the piezoelectric structure along the second axis, wherein a maximum thickness of the top portion of the main body along the second axis is smaller than a minimum thickness of the bottom portion of the main body along the second axis.
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18.
公开(公告)号:US20230168488A1
公开(公告)日:2023-06-01
申请号:US18058152
申请日:2022-11-22
Applicant: STMICROELECTRONICS S.r.l.
Inventor: Federico VERCESI , Fabrizio CERINI , Luca GUERINONI , Nicolo' BONI
IPC: G02B26/04
CPC classification number: G02B26/04
Abstract: A MEMS shutter including: a substrate of semiconductor material traversed by a main aperture, and a first semiconductor layer and a second semiconductor layer, which form a supporting structure fixed to the substrate; a plurality of deformable structures; a plurality of actuators; and a plurality of shielding structures, each of which is formed by a corresponding portion of at least one between the first semiconductor layer and the second semiconductor layer, the shielding structures being arranged angularly around the underlying main aperture so as to provide shielding of the main aperture, each shielding structure being further coupled to the supporting structure via a corresponding deformable structure. Each actuator may be controlled so as to cause a rotation of a corresponding shielding structure between a respective first position and a respective second position, thus varying shielding of the main aperture. The first and second positions of the shielding structures are such that, in at least one operating condition of the MEMS shutter, pairs of adjacent shielding structures at least partially overlap one another.
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19.
公开(公告)号:US20230168415A1
公开(公告)日:2023-06-01
申请号:US18058147
申请日:2022-11-22
Applicant: STMICROELECTRONICS S.r.l.
Inventor: Federico VERCESI , Nicolo' BONI , Fabrizio CERINI , Luca GUERINONI
Abstract: A MEMS shutter including: a semiconductor substrate traversed by an aperture; a first semiconductor layer and a second semiconductor layer, which form a supporting structure fixed to the substrate; a plurality of deformable structures, each of which is formed by a corresponding portion of at least one between the first and second semiconductor layers; a plurality of actuators; a plurality of shielding structures, each of which is formed by a corresponding portion of at least one between the first and second semiconductor layers, the shielding structures being arranged angularly around the underlying aperture so as to provide shielding of the aperture, each shielding structure being further coupled to the supporting structure via a deformable structure. Each actuator may be controlled so as to translate a corresponding shielding structure between a first position and a second position, thus varying shielding of the aperture; the first and second positions of the shielding structures are such that, in at least one operating condition, pairs of adjacent shielding structures at least partially overlap one another.
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公开(公告)号:US20220380203A1
公开(公告)日:2022-12-01
申请号:US17744312
申请日:2022-05-13
Applicant: STMICROELECTRONICS S.r.l.
Inventor: Federico VERCESI , Luca SEGHIZZI , Laura OGGIONI , Lorenzo CORSO
Abstract: A process for manufacturing a combined microelectromechanical device includes forming, in a die of semiconductor material, at least a first and a second microelectromechanical structure, performing a first bonding phase to bond a cap to the die via a bonding region or adhesive to define at least a first and a second cavity at the first and, respectively, second microelectromechanical structures, the cavities being at a controlled pressure, forming an access channel through the cap in fluidic communication with the first cavity to control the pressure value inside the first cavity in a distinct manner with respect to a respective pressure value inside the second cavity, and performing a second bonding phase, after which the bonding region deforms to hermetically close the first cavity with respect to the access channel.
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