Abstract:
A method of manufacturing a display device includes: forming a first electrode on a substrate; forming an insulating layer on the substrate and on the first electrode; providing light emitting elements in the insulating layer, each of the light emitting elements having a long axis and a short axis crossing the long axis and being configured to emit light; aligning the light emitting elements such that one end of each of the light emitting elements faces the substrate and the long axis of each of the light emitting elements is arranged in a direction from the substrate toward the insulating layer; patterning the insulating layer to form an insulating pattern exposing another end of each of the light emitting elements; and forming a second electrode electrically connected to the exposed other end of each of the light emitting elements.
Abstract:
A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.
Abstract:
A thin film transistor display panel according to an exemplary embodiment of the present invention includes a substrate, a first insulating layer formed on the substrate, a semiconductor layer formed on the first insulating layer, a second insulating layer formed on the semiconductor layer, and a gate electrode formed on the second insulating layer, in which the first insulating layer includes a light blocking material, and a thickness of the first insulating layer is greater than or equal to a thickness of the second insulating layer.
Abstract:
A display device includes: a substrate; and a transistor on the substrate. The transistor includes: a semiconductor layer; a gate electrode overlapping with the semiconductor layer; a first gate contact overlapping layer overlapping with a channel region, and in contact with the gate electrode, the channel region being a region where the gate electrode and the semiconductor layer are overlapped with each other; and a semiconductor contact overlapping layer overlapping with the channel region, and in contact with the semiconductor layer. The first gate contact overlapping layer and the semiconductor contact overlapping layer are spaced apart from each other by a gap within the channel region.
Abstract:
A display device includes a first lower electrode disposed on a substrate, a first light emitting element disposed on the first lower electrode, a second electrode disposed on the first light emitting element, a second light emitting element disposed on the second electrode, and a first upper electrode disposed on the second light emitting element. The first lower electrode and the first upper electrode are connected to each other.
Abstract:
A display device includes a substrate, a display element layer disposed on a first surface of the substrate and including a light emitting element that emits light, and a pixel circuit layer disposed on the display element layer and including a transistor electrically connected to the light emitting element. The display element layer includes a first contact electrode electrically connected to a first end of the light emitting element, and a second contact electrode electrically connected to a second end of the light emitting element. The pixel circuit layer includes a reflective layer disposed on the display element layer and overlapping the light emitting element. One of the first contact electrode and the second contact electrode is electrically connected to the transistor. The reflective layer reflects the light emitted from the light emitting element toward a second surface of the substrate.
Abstract:
A display panel includes a base layer having a display area and a non-display area including a pad area; a plurality of transistors on the base layer; a first protective layer covering the plurality of transistors; a conductive layer on the first protective layer; a second protective layer over the conductive layer; a first electrode and a second electrode on the second protective layer, the first and second electrodes being spaced from each other; a plurality of light emitting elements between the first electrode and the second electrode; a first contact electrode on the first electrode, the first contact electrode being in contact with one end portion of the light emitting element, and a second contact electrode on the second electrode, the second contact electrode being in contact with the other end portion of the at least one light emitting element; and a first pad in the pad area.
Abstract:
A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
Abstract:
A display device comprises a first substrate, a first power bottom line on the first substrate, a second substrate on the first power bottom line, the second substrate having a first power connection hole to expose the first power bottom line, and a pixel driving unit including a plurality of switching elements on the second substrate.
Abstract:
A display device includes a substrate including a display area and a non-display area, a pixel located in the display area, a pad unit on one side of the non-display area, and a driver connected to the pixel. The pixel includes a first insulating layer, a first light emitting element on the first insulating layer, a second insulating layer on the first light emitting element and exposing one end portion and another end portion of the first light emitting element, a first contact electrode on the second insulating layer and connected to the one end portion of the first light emitting element, and a second contact electrode on the second insulating layer and connected to the other end portion of the first light emitting element. The pad unit includes a pad metal layer, a first pad insulating layer, a second pad insulating layer, and a pad electrode.