公开(公告)号：US20220037292A1

公开(公告)日：2022-02-03

申请号：US17382825

申请日：2021-07-22

Applicant: Samsung Display Co., LTD.

Inventor： In Hyuk KIM ,  Dong Gyun KIM ,  Jae Hoon JUNG ,  Jin Oh KWAG ,  Hee Yeon YOO ,  Sung Chan JO ,  Jeong In CHOI ,  Hye Jung HONG ,  Jong Hyuk KANG ,  Dong Eon LEE ,  Hyun Min CHO

IPC: H01L25/075 ,  H01L33/00 ,  H01L21/68 ,  H01L21/78

Abstract: An apparatus includes a base including a receiving portion that receives a substrate on which semiconductor elements are disposed; and at least one ultrasonic generator that generates and applies ultrasonic waves to the substrate placed in the base.

公开(公告)号：US20220028925A1

公开(公告)日：2022-01-27

申请号：US17382864

申请日：2021-07-22

Applicant: Samsung Display Co., LTD.

Inventor： Moon Jung AN ,  Hye Lim KANG ,  Min Young KIM ,  Dong Eon LEE

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/24 ,  H01L33/38 ,  H01L33/44

Abstract: A light-emitting element, a method of fabricating a light-emitting element, and a display device comprising a light-emitting element are provided. The light-emitting element comprises a first semiconductor layer doped with an n-type dopant, a second semiconductor layer doped with a p-type dopant, a light-emitting layer disposed between the first semiconductor layer and second semiconductor layer, an electrode layer disposed on the second semiconductor layer, an insulating structure disposed on the electrode layer and having a maximum diameter smaller than a diameter of the electrode layer and an insulating film that surrounds side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer.

公开(公告)号：US20240120439A1

公开(公告)日：2024-04-11

申请号：US18318811

申请日：2023-05-17

Applicant: Samsung Display Co., LTD.

Inventor： Seung A LEE ,  Bong Chun PARK ,  Kwan Jae LEE ,  Dong Eon LEE ,  So Young LEE

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/02

CPC classification number: H01L33/06 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/30

Abstract: A light emitting element includes a first semiconductor layer, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, and an insulating layer enclosing the first semiconductor layer, the active layer, and at least a portion of the second semiconductor layer. The first semiconductor layer, the active layer, and the second semiconductor layer are successively disposed in a first direction. The active layer includes a first barrier layer, a second barrier layer, and a first well layer disposed between the first barrier layer and the second barrier layer, and including a non-uniform indium composition ratio in a first direction and a second direction intersecting the first direction, and including a non-uniform indium density in a third direction intersecting the first direction and the second direction.

公开(公告)号：US20230207740A1

公开(公告)日：2023-06-29

申请号：US17969072

申请日：2022-10-19

Applicant: Samsung Display Co., LTD.

Inventor： Jong Jin LEE ,  Si Sung KIM ,  Hyung Seok KIM ,  Dong Eon LEE

IPC: H01L33/44 ,  H01L33/38 ,  H01L25/16

CPC classification number: H01L33/44 ,  H01L33/38 ,  H01L25/167 ,  H01L33/0093

Abstract: A light emitting element includes a light emitting element core extending in a direction and including first and second semiconductor layers and an element active layer disposed between the first and second semiconductor layers. The light emitting element includes an element electrode layer on the second semiconductor layer of the light emitting element core, and an element insulating film surrounding a side surface of the light emitting element core and a side surface of the element electrode layer. The element electrode layer overlaps the second semiconductor layer in the direction the light emitting element core extends, an area of the element electrode layer in plan view is smaller than an area of the second semiconductor layer in plan view, and the element insulating film completely exposes a surface of the element electrode layer, the surface being opposite to another surface of the element electrode layer facing the second semiconductor layer.

公开(公告)号：US20230073501A1

公开(公告)日：2023-03-09

申请号：US17894894

申请日：2022-08-24

Applicant: Samsung Display Co., LTD.

Inventor： Si Sung KIM ,  Hyun Min CHO ,  Hyung Seok KIM ,  Jong Jin LEE ,  Dong Eon LEE

IPC: H01L33/24 ,  H01L27/15 ,  H01L33/00 ,  H01L33/44

Abstract: A light emitting element includes a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an element active layer between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer, the element active layer, and the second semiconductor layer are sequentially located along a first direction. A thickness of the first semiconductor layer in the first direction is greater than a thickness of the second semiconductor layer in the first direction. A cross section of the element active layer taken along the first direction includes a first side facing the first semiconductor layer, a second side facing the second semiconductor layer, a first lateral side connecting one end of the first side to one end of the second side, and a second lateral side connecting an other end of the first side to an other end of the second side.

公开(公告)号：US20220328737A1

公开(公告)日：2022-10-13

申请号：US17618166

申请日：2020-03-11

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Moon Jung AN ,  Dong Eon LEE

IPC: H01L33/54 ,  H01L25/16 ,  H01L33/50

Abstract: A display device may include a light emitting element including a first end having a first surface, and a second end having a second surface parallel to the first surface, an organic pattern that overlaps the light emitting element and exposes the first and second surfaces, a first electrode disposed on a substrate and electrically contacting the first end, and a second electrode disposed on the substrate and spaced apart from the first electrode, and electrically contacting the second end. A surface area of the first surface may be less than that of the second surface. A top surface of the organic pattern may be a curved surface.

公开(公告)号：US20220173158A1

公开(公告)日：2022-06-02

申请号：US17520227

申请日：2021-11-05

Applicant: Samsung Display Co., Ltd.

Inventor： Seung Geun LEE ,  Byung Ju LEE ,  Hoo Keun PARK ,  Chul Jong YOO ,  Dong Eon LEE

IPC: H01L27/15 ,  H01L33/62 ,  H01L33/38

Abstract: A display device includes a first subpixel and a second subpixel, wherein the first subpixel includes a first light source unit including a plurality of first light-emitting elements configured to emit first light having a center wavelength of a first wavelength, the second subpixel includes a second light source unit including a plurality of second light-emitting elements configured to emit second light having a center wavelength of a second wavelength, the first light source unit includes first to nth light-emitting groups that are connected in series, each of the groups including the plurality of first light-emitting elements, the second light source unit includes first to mth light-emitting groups that are connected in series and each of the groups includes the plurality of second light-emitting elements, where n and m are natural numbers, and the second wavelength is different from the first wavelength.

公开(公告)号：US20210167124A1

公开(公告)日：2021-06-03

申请号：US17265799

申请日：2019-01-14

Applicant: Samsung Display Co., Ltd.

Inventor： Jung Hong MIN ,  Dae Hyun KIM ,  Hyun Min CHO ,  Dong Uk KIM ,  Dong Eon LEE ,  Seung A LEE ,  Hyung Rae CHA

IPC: H01L27/15 ,  H01L33/12 ,  H01L33/22 ,  H01L33/38 ,  H01L33/40 ,  H01L33/00

Abstract: Provided are a light-emitting element, a manufacturing method thereof, and a display device comprising the light-emitting element. The method for manufacturing the light-emitting element comprises the steps of: preparing a lower substrate including a substrate and a buffer material layer formed on the substrate, forming a separating layer disposed on the lower substrate and including at least one graphene layer, forming an element deposition structure by depositing a first conductivity type semiconductor layer, an active material layer, and a second conductivity type semiconductor layer on the separating layer, forming an element rod by etching the element deposition structure and the separating layer in a vertical direction; and separating the element rod from the lower substrate to form a light emitting element.

公开(公告)号：US20160215241A1

公开(公告)日：2016-07-28

申请号：US14964267

申请日：2015-12-09

Applicant: LTCAM CO., LTD. ,  Samsung Display Co., Ltd

Inventor： Dong Eon LEE ,  Jin Ho JU ,  Jun Hyuk WOO ,  Seok Ho LEE

IPC: C11D7/32 ,  C11D7/26 ,  C11D11/00 ,  C11D7/08

CPC classification number: C11D7/3245 ,  C11D3/3947 ,  C11D3/3956 ,  C11D7/08 ,  C11D7/265 ,  C11D7/3209 ,  C11D11/0047 ,  H01L21/02057

Abstract: There is provided a cleaner composition for a process of manufacturing a semiconductor and a display. The cleaner composition includes 0.01 to 5.0 wt % of amino acid-based chelating agent, 0.01 to 1.5 wt % of organic acid, 0.01 to 1.0 wt % of inorganic acid, 0.01 to 5.0 wt % of alkali compound, and the balance of deionized water and is based on acidic water with pH levels of 1 to 5. The cleaner composition may enhance metal contaminants removal capability and have a function to remove particles and organic contaminants, and prevent corrosion of copper and reverse adsorption of copper. Thus, cleaner composition may be used for various purposes of etching copper, removing residues, and a cleaner by adjusting an etch rate.

Abstract translation: 提供了一种用于制造半导体和显示器的过程的清洁剂组合物。 清洁剂组合物包含0.01〜5.0重量％的氨基酸类螯合剂，0.01〜1.5重量％的有机酸，0.01〜1.0重量％的无机酸，0.01〜5.0重量％的碱性化合物，余量的去离子水 并且基于pH为1至5的酸性水。清洁剂组合物可以增强金属污染物去除能力，并具有去除颗粒和有机污染物的功能，并且防止铜的腐蚀和铜的反向吸附。 因此，清洁剂组合物可用于蚀刻铜的各种目的，通过调整蚀刻速率去除残留物和清洁剂。

公开(公告)号：US20250081673A1

公开(公告)日：2025-03-06

申请号：US18819017

申请日：2024-08-29

Applicant: Samsung Display Co., LTD.

Inventor： So Young LEE ,  Bong Chun PARK ,  Kwan Jae LEE ,  Dong Eon LEE ,  Seung A LEE ,  Jong Jin LEE

IPC: H01L33/14 ,  H01L25/16 ,  H01L33/62

Abstract: A display device includes a first electrode and a second electrode spaced apart from each other, and light emitting elements disposed between the first electrode and the second electrode. Each of the light emitting elements include a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. Each of the light emitting elements emits light with a wavelength in a range of about 464 nm to about 468 nm at a current density in a range of about 0.5 A/cm2 to about 100 A/cm2, and has a maximum external quantum efficiency greater than or equal to about 15%.