公开(公告)号：US11670667B2

公开(公告)日：2023-06-06

申请号：US16922147

申请日：2020-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joohun Han ,  Junhee Choi ,  Kiho Kong ,  Jinjoo Park ,  Nakhyun Kim ,  Junghun Park

IPC: H01L33/00 ,  H01L27/15

CPC classification number: H01L27/156 ,  H01L33/0093 ,  H01L33/0095 ,  H01L33/007

Abstract: A micro light emitting diode (LED) device and a method of manufacturing the same are provided. A micro LED device includes a light emitting layer that is provided on a support substrate, a bonding layer, and a driver layer. The light emitting layer includes a stacked structure including a first semiconductor layer, an active layer, and a second semiconductor layer; first and second electrodes provided on a first side and a second side of the stacked structure; and a plurality of light emitting regions. The bonding layer is positioned between the support substrate and the light emitting layer. The drive layer includes a drive element electrically connected to the light emitting layer and is positioned on the light emitting layer to apply power to the plurality of light emitting regions of the light emitting layer.

公开(公告)号：US11424388B2

公开(公告)日：2022-08-23

申请号：US16562791

申请日：2019-09-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Jinjoo Park ,  Joohun Han ,  Kyungwook Hwang ,  Sungjin Kang ,  Junghun Park

IPC: H01L33/46 ,  H01L25/16

Abstract: Provided is a light-emitting device including a substrate, a light-emitting pattern provided on the substrate, a first reflection film provided between the light-emitting pattern and the substrate, a second reflection film provided on a side surface of the light-emitting pattern, and a passivation film provided between the light-emitting pattern and the second reflection film, wherein the second reflection film is electrically connected to the light-emitting pattern, and a portion of light generated from the light-emitting pattern is emitted through an upper surface of the light-emitting pattern after being reflected by at least one of the first reflection film and the second reflection film.

公开(公告)号：US10481917B2

公开(公告)日：2019-11-19

申请号：US15371524

申请日：2016-12-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoon Choi ,  Eunwoo Park ,  Junghun Park

IPC: G06F9/44 ,  G06F9/4401 ,  G06F9/46

Abstract: Various embodiments include a first memory configured to store a first operating system and a second operating system; a second memory; and a processor, wherein the processor is configured to: check situation information associated with the electronic device based on execution of the first operating system in the second memory; when the situation information satisfies a predetermined condition, store, in the first memory, as a snapshot image, data associated with the execution of the first operating system and stored in the second memory; and execute the second operating system in the second memory.

公开(公告)号：US12087853B2

公开(公告)日：2024-09-10

申请号：US17982164

申请日：2022-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinjoo Park ,  Junhee Choi ,  Kiho Kong ,  Joohun Han ,  Nakhyun Kim ,  Junghun Park

IPC: H01L27/12 ,  H01L27/15 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L29/7786 ,  H01L27/1214 ,  H01L27/156 ,  H01L29/66462 ,  H01L29/778 ,  H01L27/15

Abstract: A semiconductor device includes a substrate including a first region and a second region adjacent to the first region, the first and the second regions being disposed in a first direction parallel to an upper surface of the substrate; an etch-stop layer disposed on the first region and the second region; a separation layer disposed on an upper portion of the etch-stop layer, the separation layer being disposed on the first region; a high-electron-mobility transistor (HEMT) element disposed on an upper portion of the separation layer in a second direction perpendicular to an upper surface of the substrate; a light-emitting element disposed on the second region between the substrate and the etch-stop layer; and a plurality of first insulating patterns covering side surfaces of the HEMT element, the plurality of first insulating patterns extending to the etch-stop layer.

公开(公告)号：US11705479B2

公开(公告)日：2023-07-18

申请号：US17400354

申请日：2021-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Sungjin Kang ,  Kiho Kong ,  Junghun Park ,  Jinjoo Park ,  Joohun Han ,  Kyungwook Hwang

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/14 ,  H01L33/22 ,  H01L33/40 ,  H01L33/42 ,  H01L33/50 ,  H01L33/60

CPC classification number: H01L27/156 ,  H01L33/0093 ,  H01L33/145 ,  H01L33/22 ,  H01L33/405 ,  H01L33/42 ,  H01L33/504 ,  H01L33/60 ,  H01L2933/0016 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2933/0091

Abstract: Provided are a display apparatus and a method of manufacturing the same. The display apparatus includes a support substrate, a driving layer provided on the support substrate and including a driving element configured to apply power to a pixel electrode, and a light-emitting layer provided on the driving layer.

公开(公告)号：US20230143907A1

公开(公告)日：2023-05-11

申请号：US17720872

申请日：2022-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Nakhyun Kim ,  Joosung Kim ,  Younghwan Park ,  Junghun Park ,  Dongchul Shin ,  Eunsung Lee ,  Joohun Han

IPC: H01L33/04 ,  H01L27/15 ,  H01L33/24 ,  H01L33/44

CPC classification number: H01L33/04 ,  H01L27/156 ,  H01L33/24 ,  H01L33/44

Abstract: Provided is an epitaxy structure including a substrate having an upper surface, the upper surface having a single crystal structure, a two-dimensional material layer disposed on the upper surface of the substrate, and a plurality of nanorod light emitting devices disposed on an upper surface of the two-dimensional material layer, each of the plurality of nanorod light emitting devices having a nanorod shape extending in a vertical direction, wherein each of the plurality of nanorod light emitting devices includes a light emitting nanorod, and a passivation film disposed adjacent to a sidewall of the light emitting nanorod, the passivation film having insulation.

公开(公告)号：US20230062456A1

公开(公告)日：2023-03-02

申请号：US17982164

申请日：2022-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Jinjoo PARK ,  Junhee Choi ,  Kiho Kong ,  Joohun Han ,  Nakhyun Kim ,  Junghun Park

IPC: H01L29/778 ,  H01L29/66 ,  H01L27/12 ,  H01L27/15

Abstract: A semiconductor device includes a substrate including a first region and a second region adjacent to the first region, the first and the second regions being disposed in a first direction parallel to an upper surface of the substrate; an etch-stop layer disposed on the first region and the second region; a separation layer disposed on an upper portion of the etch-stop layer, the separation layer being disposed on the first region; a high-electron-mobility transistor (HEMT) element disposed on an upper portion of the separation layer in a second direction perpendicular to an upper surface of the substrate; a light-emitting element disposed on the second region between the substrate and the etch-stop layer; and a plurality of first insulating patterns covering side surfaces of the HEMT element, the plurality of first insulating patterns extending to the etch-stop layer.

公开(公告)号：US20210375983A1

公开(公告)日：2021-12-02

申请号：US17400354

申请日：2021-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee CHOI ,  Sungjin Kang ,  Kiho Kong ,  Junghun Park ,  Jinjoo Park ,  Joohun Han ,  Kyungwook Hwang

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/14 ,  H01L33/22 ,  H01L33/40 ,  H01L33/42 ,  H01L33/50 ,  H01L33/60

Abstract: Provided are a display apparatus and a method of manufacturing the same. The display apparatus includes a support substrate, a driving layer provided on the support substrate and including a driving element configured to apply power to a pixel electrode, and a light-emitting layer provided on the driving layer.

公开(公告)号：US10930813B2

公开(公告)日：2021-02-23

申请号：US16208901

申请日：2018-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghun Park ,  Junhee Choi

IPC: H01L33/00 ,  H01L33/08 ,  H01L33/48 ,  H01L33/32 ,  H01L27/15 ,  H01L33/20

Abstract: Provided are a semiconductor light-emitting array and a method of manufacturing the same. The manufacturing method includes forming a plurality of grooves in a region of a substrate and sequentially growing a first semiconductor layer, an active layer, and a second semiconductor layer on the substrate to form a light-emitting structure layer.

公开(公告)号：US12100340B2

公开(公告)日：2024-09-24

申请号：US18233148

申请日：2023-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Nakhyun Kim ,  Junghun Park ,  Jinjoo Park ,  Joohun Han

IPC: G09G3/32 ,  H01L27/15 ,  H01L33/10 ,  H01L33/34

CPC classification number: G09G3/32 ,  H01L27/156 ,  H01L33/10 ,  H01L33/346 ,  G09G2300/0452

Abstract: Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.