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11.发明申请公开(公告)号：US20190157547A1
公开(公告)日：2019-05-23
申请号：US15890101
申请日：2018-02-06
Applicant: Samsung Electronics Co., LTD.
Inventor： Ikhtiar , Xueti Tang , Mohamad Towfik Krounbi
Abstract: A magnetic junction and method for providing the magnetic junction are described. The method includes providing a pinned layer, a nonmagnetic spacer layer and a free layer switchable between stable magnetic states. The nonmagnetic spacer layer is between the pinned and free layers. Providing the pinned layer and/or providing the free layer includes cooling a portion of the magnetic junction, depositing a wetting layer while the portion of the magnetic junction is cooled, oxidizing/nitriding the wetting layer and depositing a boron-free magnetic layer on the oxide/nitride wetting layer. The portion of the magnetic junction is cooled to within a temperature range including temperature(s) not greater than 250 K. The wetting layer has a thickness of at least 0.25 and not more than three monolayers. The wetting layer includes at least one magnetic material. The boron-free magnetic layer has a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy.
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12.发明申请公开(公告)号：US20180219152A1
公开(公告)日：2018-08-02
申请号：US15479653
申请日：2017-04-05
Applicant: Samsung Electronics Co., LTD.
Inventor： Dmytro Apalkov , Xueti Tang , Hong-Sik Jung , Roman Chepulskyy
CPC classification number: H01L43/08 , H01F10/123 , H01F10/126 , H01F10/324 , H01F10/3286 , H01F10/329 , H01F41/303 , H01L43/10 , H01L43/12
Abstract: A magnetic memory including a plurality of magnetic junctions and at least one spin-orbit interaction (SO) active layer is described. Each of the magnetic junctions includes a pinned layer, a free layer and a nonmagnetic spacer layer between reference and free layers. The free layer has at least one of a tilted easy axis and a high damping constant. The tilted easy axis is at a nonzero acute angle from a direction perpendicular-to-plane. The high damping constant is at least 0.02. The at least one SO active layer is adjacent to the free layer and carries a current in-plane. The at least one SO active layer exerts a SO torque on the free layer due to the current. The free layer is switchable using the SO torque.
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公开(公告)号：US20180197589A1
公开(公告)日：2018-07-12
申请号：US15903926
申请日：2018-02-23
Applicant: Samsung Electronics Co., LTD.
Inventor： Xueti Tang , Dmytro Apalkov , Gen Feng , Mohamad Towfik Krounbi
CPC classification number: G11C11/161 , G11C11/1675 , H01L27/222 , H01L27/228 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A magnetic device and method for providing the magnetic device are described. The magnetic device includes magnetic junctions and spin-orbit interaction (SO) active layer(s). Each magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The pinned layer has a perpendicular magnetic anisotropy (PMA) energy greater than an out-of-plane demagnetization energy. The pinned layer includes a magnetic barrier layer between a magnetic layer and a high PMA layer including at least one nonmagnetic component. The magnetic barrier layer includes Co and at least one of Ta, W and Mo. The magnetic barrier layer is for blocking diffusion of the nonmagnetic component. The SO active layer(s) are adjacent to the free layer. The SO active layer(s) carry a current in-plane and exert a SO torque on the free layer due to the current. The free layer is switchable between stable magnetic states using the SO torque.
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公开(公告)号：US09917249B2
公开(公告)日：2018-03-13
申请号：US15177138
申请日：2016-06-08
Applicant: Samsung Electronics Co., LTD.
Inventor： Xueti Tang , Dmytro Apalkov , Gen Feng , Mohamad Towfik Krounbi
CPC classification number: H01L43/10 , G11C11/161 , G11C11/1675 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The pinned layer has a pinned layer perpendicular magnetic anisotropy energy greater than a pinned layer out-of-plane demagnetization energy. The pinned layer includes a high perpendicular magnetic anisotropy (PMA) layer including at least one nonmagnetic component, a magnetic layer and a magnetic barrier layer between the high PMA layer and the magnetic layer. The magnetic barrier layer includes Co and at least one of Ta, W and Mo. The magnetic barrier layer is for blocking diffusion of the nonmagnetic component of the high PMA layer.
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公开(公告)号：US09825220B2
公开(公告)日：2017-11-21
申请号：US15080576
申请日：2016-03-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dmytro Apalkov , Xueti Tang , Dustin Erickson , Vladimir Nikitin , Roman Chepulskyy
CPC classification number: H01L43/12 , G11C11/161 , H01L43/08
Abstract: A magnetic tunnel junction device and a method to make the device are disclosed. The magnetic tunnel junction device comprises a first reference magnetic material layer, a tunnel barrier material layer, a free magnetic material layer between the first reference magnetic material layer and the tunnel barrier material layer, and a second reference magnetic material layer disposed on an opposite side of the tunnel barrier material layer from the free magnetic material layer, in which the second reference magnetic material layer is anti-magnetically exchanged coupled with the first reference magnetic material layer. A shift field Hshift experienced by the free magnetic material layer is substantially canceled by the anti-magnetic exchange coupling between the first reference magnetic material layer and the second reference magnetic material layer.
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Patent Agency Ranking
16.发明授权Method for providing a perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic devices using a sacrificial insertion layer 有权提供可用于使用牺牲插入层的自旋转移扭矩磁性装置中的垂直磁各向异性磁结的方法公开(公告)号：US09559296B2
公开(公告)日：2017-01-31
申请号：US14712792
申请日：2015-05-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dustin William Erickson , Xueti Tang , Jangeun Lee
Abstract: A method for providing a magnetic junction usable in a magnetic device and the magnetic junction are described. The method includes providing a free layer, a pinned layer and a nonmagnetic spacer layer between the free layer and the pinned layer. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the step of providing the free layer includes a first plurality of steps and the step of providing the pinned layer includes a second plurality of steps. The first and second plurality of steps include depositing a portion of a layer, depositing a sacrificial layer, annealing the portion of the magnetic junction under the sacrificial layer, and depositing a remaining portion of the layer. The layer may be the free layer, the pinned layer, or both.
Abstract translation: 描述了一种用于提供可用于磁性装置和磁结的磁结的方法。 该方法包括在自由层和钉扎层之间提供自由层，钉扎层和非磁性间隔层。 当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。 提供自由层的步骤中的至少一个包括第一多个步骤，并且提供钉扎层的步骤包括第二多个步骤。 第一和第二多个步骤包括沉积层的一部分，沉积牺牲层，将牺牲层下面的磁结的部分退火，以及沉积该层的剩余部分。 该层可以是自由层，钉扎层或两者。
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17.发明申请METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS INCLUDING FREE LAYERS THAT ARE COBALT-FREE 有权用于提供磁性结的方法和系统，包括无钴的自由层公开(公告)号：US20160197119A1
公开(公告)日：2016-07-07
申请号：US14977094
申请日：2015-12-21
Applicant: Samsung Electronics Co., LTD.
Inventor： Xueti Tang , Jang-Eun Lee , Gen Feng , Dustin William Erickson
CPC classification number: H01L27/222 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a nonmagnetic spacer layer, and a reference layer. The free layer includes at least one of Fe and at least one Fe alloy. Furthermore, the free layer excludes Co. The nonmagnetic spacer layer adjoins the free layer. The nonmagnetic spacer layer residing between reference layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁结包括自由层，非磁性间隔层和参考层。 自由层包括Fe和至少一种Fe合金中的至少一种。 此外，自由层不包括Co.非磁性间隔层邻接自由层。 位于参考层和自由层之间的非磁性间隔层。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。
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18.发明授权Method and system for providing a bulk perpendicular magnetic anisotropy free layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications 有权用于在旋转传递转矩磁随机存取存储器应用中的垂直磁结中提供体积垂直磁各向异性自由层的方法和系统公开(公告)号：US09306155B2
公开(公告)日：2016-04-05
申请号：US14171574
申请日：2014-02-03
Applicant: Samsung Electronics Co., LTD.
Inventor： Xueti Tang , Jang Eun Lee
CPC classification number: H01L43/10 , G11C11/161 , G11C11/1675 , H01L43/08 , H01L43/12
Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer includes at least one of a hybrid perpendicular magnetic anisotropy (PMA) structure and tetragonal bulk perpendicular magnetic anisotropy (B-PMA) structure. At least one of the free layer and the pinned layer have a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁性结包括自由层，被钉扎层和位于游离层和被钉扎层之间的非磁性间隔层。 自由层包括混合垂直磁各向异性（PMA）结构和四方体体垂直磁各向异性（B-PMA）结构中的至少一种。 自由层和被钉扎层中的至少一个具有大于面外退磁能的垂直磁各向异性能。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。
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19.发明申请METHOD AND SYSTEM FOR PROVIDING A THIN PINNED LAYER IN A PERPENDICULAR MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS 审中-公开用于在旋转传动扭矩磁性随机存取存储器应用中使用的全能磁连接中提供薄型密封层的方法和系统公开(公告)号：US20160005791A1
公开(公告)日：2016-01-07
申请号：US14731164
申请日：2015-06-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Xueti Tang , Dustin William Erickson , Jangeun Lee
Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The pinned layer has a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy. The nonmagnetic spacer layer and the free layer are between the pinned layer and the substrate. The pinned layer has a pinned layer perpendicular magnetic anisotropy energy greater than a pinned layer out-of-plane demagnetization energy and a thickness of not more than thirty Angstroms.
Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁性结包括自由层，被钉扎层和位于游离层和被钉扎层之间的非磁性间隔层。 当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。 钉扎层具有大于面外退磁能的垂直磁各向异性能。 非磁性间隔层和自由层位于被钉扎层和基底之间。 被钉扎层具有垂直磁各向异性能量的钉扎层，其能量大于被钉扎层的面外退磁能量和不超过三十埃的厚度。
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20.发明申请DUAL PERPENDICULAR MAGNETIC ANISOTROPY MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS 有权双转子磁性非线性磁性接头可用于转子转子磁性随机存取存储器应用公开(公告)号：US20150129997A1
公开(公告)日：2015-05-14
申请号：US14184684
申请日：2014-02-19
Applicant: Samsung Electronics Co., LTD.
Inventor： Xueti Tang , Jang Eun Lee
CPC classification number: H01L43/12 , G11B2005/3996 , G11C11/16 , G11C11/161 , H01L27/226 , H01L43/08 , Y10T29/49034
Abstract: A method for providing a dual magnetic junction usable in a magnetic device and the dual magnetic junction are described. First and second nonmagnetic spacer layers, a free layer and pinned are provided. The first pinned layer, free layer and nonmagnetic spacer layer may be annealed at an anneal temperature of at least three hundred fifty degrees Celsius before a second pinned layer is provided. The second pinned layer may include Co, Fe and Tb. The nonmagnetic spacer layers are between the pinned layers and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
Abstract translation: 描述了一种用于提供可用于磁性装置和双重磁性结的双重磁性结的方法。 第一和第二非磁性间隔层，提供自由层和钉扎。 在提供第二被钉扎层之前，可以在至少三百五十摄氏度的退火温度下退火第一被钉扎层，自由层和非磁性间隔层。 第二被钉扎层可以包括Co，Fe和Tb。 非磁性间隔层位于钉扎层和自由层之间。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。
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