公开(公告)号：US11327395B2

公开(公告)日：2022-05-10

申请号：US16815219

申请日：2020-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-hee Kim ,  Chan Hwang

IPC: G03F1/26 ,  G03F1/36 ,  H01L21/283 ,  H01L21/311 ,  H01L29/41 ,  G03F1/32 ,  H01L27/108

Abstract: A method for fabricating a phase shift mask includes preparing a transmissive substrate on which a first mask region and a second mask region surrounding the first mask region are defined. In the first mask region, main patterns are formed having a first pitch in a first direction and a second direction perpendicular to the first direction. Each of the main patterns has a first area. In at least one row, assist patterns are formed at the first pitch to surround the main patterns. Each of the assist patterns has a second area less than the first area. In the second mask region, dummy patterns are formed in a plurality of rows. The dummy patterns surround the assist patterns at the first pitch. Each of the dummy patterns has a third area greater than the first area.

公开(公告)号：US11137673B1

公开(公告)日：2021-10-05

申请号：US16952844

申请日：2020-11-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doogyu Lee ,  Seungyoon Lee ,  Jeongjin Lee ,  Chan Hwang

IPC: G03F1/24 ,  G03F7/20 ,  H01L21/027

Abstract: Provided are an extreme ultraviolet (EUV) exposure apparatus for improving an overlay error in a EUV exposure process, and an overlay correction method and a semiconductor device fabricating method using the exposure apparatus. The EUV exposure apparatus includes an EUV light source; a first optical system configured to emit EUV light from the EUV light source to an EUV mask; a second optical system configured to emit EUV light reflected from the EUV mask to a wafer; a mask stage; a wafer stage; and a control unit configured to control the mask stage and the wafer stage, wherein, based on a correlation between a first overlay parameter, which is one of parameters of overlay errors between layers on the wafer, and a second overlay parameter, which is another parameter, the first overlay parameter is corrected through correction of the second overlay parameter.

公开(公告)号：US20230095808A1

公开(公告)日：2023-03-30

申请号：US18062231

申请日：2022-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongjin Lee ,  Minseok Kang ,  Seungyoon Lee ,  Chan Hwang

IPC: G03F1/70 ,  G03F7/20 ,  H01L21/66 ,  G06F17/18

Abstract: An overlay correcting method capable of optimizing correction of an overlay within a scanner correction limit of a scanner of a scanner system, and a photolithography method, a semiconductor device manufacturing method and the scanner system which are based on the overlay correcting method are provided. The overlay correcting method includes collecting overlay data by measuring an overlay of a pattern; calculating correction parameters of the overlay by performing regularized regression using the overlay data, the regularized regression being based on a correction limit of the scanner such that the correction parameters fall within the correction limit of the scanner; and providing the correction parameters to the scanner.

公开(公告)号：US10600789B2

公开(公告)日：2020-03-24

申请号：US16233715

申请日：2018-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soon-mok Ha ,  Jae-hee Kim ,  Chan Hwang ,  Jong-hyuk Kim

IPC: H01L27/108 ,  H01L21/311 ,  H01L21/027 ,  H01L49/02

Abstract: A method of forming a micro-pattern including forming a mold layer and a supporting material layer on a substrate, patterning the mold layer and the supporting material layer to form recess patterns, forming conductor patterns in the recess patterns, removing a portion of an upper portion of the supporting material layer for causing upper portions of the conductor patterns to protrude, forming a block copolymer layer on the supporting material layer, processing the block copolymer layer to phase-separate the block copolymer layer into a plurality of block parts, selectively removing some of the phase-separated plurality of block parts, and removing the supporting material layer to expose the mold layer at a position corresponding to each of the removed block parts may be provided.

公开(公告)号：US20140254916A1

公开(公告)日：2014-09-11

申请号：US14182697

申请日：2014-02-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongjin Lee ,  Chan Hwang ,  Seungyoon Lee

IPC: G06T7/00

CPC classification number: G06T7/001 ,  G03F7/70633 ,  G06T7/174 ,  G06T2207/10048 ,  G06T2207/10152 ,  G06T2207/30148 ,  G06T2207/30204 ,  H04N5/2256 ,  H04N5/332

Abstract: A method for measuring overlay includes receiving a first image of a first overlay mark captured using light having a first wavelength. The method includes receiving a second image of a second overlay mark captured using light having a second wavelength different from the first wavelength. The method includes measuring a displacement between a central portion of the first image and a central portion of the second image, wherein the first and second overlay marks are disposed on different levels.

Abstract translation: 一种用于测量覆盖层的方法包括接收使用具有第一波长的光捕获的第一覆盖标记的第一图像。 该方法包括接收使用具有不同于第一波长的第二波长的光捕获的第二重叠标记的第二图像。 该方法包括测量第一图像的中心部分和第二图像的中心部分之间的位移，其中第一和第二覆盖标记设置在不同的水平上。

公开(公告)号：US20240023305A1

公开(公告)日：2024-01-18

申请号：US18352191

申请日：2023-07-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sookyung Kim ,  Chan Hwang ,  Jeonghee Choi

IPC: H10B12/00

CPC classification number: H10B12/03 ,  H01L28/92

Abstract: A method of fabricating a semiconductor device includes forming a photoresist layer on a lower structure to have a first thickness, exposing a portion of the photoresist layer to form an exposed portion and a non-exposed portion of the photoresist layer, removing a part of the photoresist layer to form a photoresist layer having a second thickness that smaller than the first thickness, and removing the exposed portion or the non-exposed portion of the photoresist layer having the second thickness to form a photoresist pattern.

公开(公告)号：US11733601B2

公开(公告)日：2023-08-22

申请号：US17308484

申请日：2021-05-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soonmok Ha ,  Jaehee Kim ,  Sangho Yun ,  Chan Hwang

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: An EUV photomask having a main area and a scribe lane area and reflecting EUV light includes a reflective multilayer film and an absorption pattern, wherein the scribe lane area includes first and second lanes, wherein the first lane includes first and second sub-lanes extending in the same direction as an extending direction of the first lane, wherein the first sub-lane includes a first dummy pattern that is a portion of the absorption pattern, and the second sub-lane includes a second dummy pattern that is a portion of the absorption pattern, and when EUV light that is not absorbed by the first and second dummy patterns and is reflected by the reflective multilayer film is irradiated at least twice by overlapping a negative tone photoresist, an amount of light exceeds a threshold dose of light in the negative tone photoresist corresponding to the first lane.

公开(公告)号：US11456222B2

公开(公告)日：2022-09-27

申请号：US16886237

申请日：2020-05-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-Yong Jung ,  Jinsun Kim ,  Seungyoon Lee ,  Jeongjin Lee ,  Chan Hwang

IPC: H01L21/66 ,  G03F7/20

Abstract: An overlay correction method may include obtaining a first central line of a lower pattern on a substrate, forming a photoresist pattern on the lower pattern, obtaining an ADI overlay value corresponding to a first distance between a second central line of an upper flat surface of the lower pattern and a third central line of the photoresist pattern, obtaining an asymmetrical overlay value corresponding to a second distance between the first and second central lines, form an upper pattern using the photoresist pattern, obtaining an ACI overlay value corresponding to a third distance between the first central line and a fourth central line of the upper pattern, subtracting the ADI overlay value from the ACI overlay value to obtain a first overlay skew value, and adding the asymmetrical overlay value to the first overlay skew value to obtain a second overlay skew value.

公开(公告)号：US20210011373A1

公开(公告)日：2021-01-14

申请号：US16807734

申请日：2020-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongjin Lee ,  Minseok Kang ,  Seungyoon Lee ,  Chan Hwang

IPC: G03F1/70 ,  G06F17/18 ,  H01L21/66 ,  G03F7/20

Abstract: An overlay correcting method capable of optimizing correction of an overlay within a scanner correction limit of a scanner of a scanner system, and a photolithography method, a semiconductor device manufacturing method and the scanner system which are based on the overlay correcting method are provided. The overlay correcting method includes collecting overlay data by measuring an overlay of a pattern; calculating correction parameters of the overlay by performing regularized regression using the overlay data, the regularized regression being based on a correction limit of the scanner such that the correction parameters fall within the correction limit of the scanner; and providing the correction parameters to the scanner.

公开(公告)号：US10825777B2

公开(公告)日：2020-11-03

申请号：US16361546

申请日：2019-03-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taehong Min ,  Chan Hwang

IPC: H01L23/544 ,  H01L45/00

Abstract: A method of fabricating a semiconductor device includes providing a substrate including a first region and a second region. The method includes forming a first layer on the substrate. The first layer has a first hole on the first region and a second hole on the second region. The method includes forming a second layer in the first hole and the second hole. The method includes forming a mask pattern on the second region of the substrate. The method includes polishing the second layer to form a pattern in the first hole and an overlay key pattern in the second hole. A top surface of the overlay key pattern is further from the substrate than a top surface of the pattern in the first hole.