公开(公告)号：US20210333225A1

公开(公告)日：2021-10-28

申请号：US17175173

申请日：2021-02-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suyoung Lee ,  Jongmin Kim ,  Ilsuk Park ,  Kwangil Shin ,  Chungsam Jun

IPC: G01N23/225 ,  G01N23/221 ,  G06T7/00

Abstract: An inspection apparatus and a method of inspecting a semiconductor device are disclosed. The inspection apparatus includes a stage on which a semiconductor device is positioned, a first light source irradiating a high-frequency light onto an inspection area of the semiconductor device to reduce a potential barrier of a PN junction in the semiconductor device, a beam scanner arranged over the semiconductor device and irradiating a charged particle beam onto the inspection area of the semiconductor device to generate secondary electrons, and a defect detector generating a detection image corresponding to the inspection area and detecting, based on a voltage contrast between a reference image and a plurality of detection images, a defect image indicating a defect in the semiconductor device from among the plurality of detection images.

公开(公告)号：US20170200658A1

公开(公告)日：2017-07-13

申请号：US15366964

申请日：2016-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yusin Yang ,  Kang-Woong Ko ,  Sung Yoon Ryu ,  Gil-Woo Song ,  Sangkil Lee ,  Chungsam Jun ,  HyoungJo Jeon ,  Masahiro Horie

IPC: H01L21/66 ,  G01N21/27 ,  G01N21/95

Abstract: A method of inspecting a substrate includes irradiating light onto a substrate that has experienced a first process, obtaining spectral data of the light reflected from the substrate, detecting a defect region of the substrate from the spectral data, and extracting a first defect site that occurred in or during the first process from the defect region. Extracting the first defect site includes establishing an effective area where the first process affects the substrate, and extracting a superimposed area that is overlapped with the effective area from the defect region. The superimposed area is defined as the first defect site.

公开(公告)号：US10269111B2

公开(公告)日：2019-04-23

申请号：US15597262

申请日：2017-05-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonseo Song ,  Sung Yoon Ryu ,  Wahseng Yap ,  Yunjung Jee ,  Yusin Yang ,  Chungsam Jun ,  Yoo Jin Jeoung ,  Jaehyung Ahn ,  Janghee Lee

IPC: G06T7/00

Abstract: A method of inspecting a semiconductor wafer is provided, the method includes scanning a plurality of inspection swaths on a wafer to obtain a plurality of image sets and producing a plurality of reference images from the plurality of image sets, respectively. The method of inspecting a semiconductor wafer further includes selecting a plurality of target images from the plurality of image sets, respectively. The method of inspecting a semiconductor wafer additionally includes comparing each reference image of the plurality of reference images with each target image of the plurality of target images to detect a defect image from each of the plurality of target images. A reference image being compared and a target image being compared are images scanned from the same inspection swath.

公开(公告)号：US10088297B2

公开(公告)日：2018-10-02

申请号：US15464896

申请日：2017-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Yoon Ryu ,  Younghoon Sohn ,  Yusin Yang ,  Chungsam Jun ,  Yunjung Jee

IPC: G01B9/02 ,  G01B11/06

Abstract: Disclosed are apparatuses and methods for measuring a thickness. The apparatus for measuring a thickness including a light source that emits a femto-second laser, an optical coupler through which a portion of the femto-second laser is incident onto a target and other portion of the femto-second laser is incident onto a reference mirror, a detector configured to receive a reflection signal reflected on the reference mirror and a sample signal generated from the target and configured to measure a thickness of the target based on an interference signal between the reflection signal and the sample signal, and a plurality of optical fiber lines configured to connect the light source, the optical coupler, and the detector to each other may be provided.

公开(公告)号：US20180053292A1

公开(公告)日：2018-02-22

申请号：US15597262

申请日：2017-05-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonseo Song ,  Sung Yoon Ryu ,  Wahseng Yap ,  Yunjung Jee ,  Yusin Yang ,  Chungsam Jun ,  Yoo Jin Jeoung ,  Jaehyung Ahn ,  Janghee Lee

IPC: G06T7/00

CPC classification number: G06T7/001 ,  G06T2207/30148

Abstract: A method of inspecting a semiconductor wafer is provided, the method includes scanning a plurality of inspection swaths on a wafer to obtain a plurality of image sets and producing a plurality of reference images from the plurality of image sets, respectively. The method of inspecting a semiconductor wafer further includes selecting a plurality of target images from the plurality of image sets, respectively. The method of inspecting a semiconductor wafer additionally includes comparing each reference image of the plurality of reference images with each target image of the plurality of target images to detect a defect image from each of the plurality of target images. A reference image being compared and a target image being compared are images scanned from the same inspection swath.

公开(公告)号：US09892980B2

公开(公告)日：2018-02-13

申请号：US15437566

申请日：2017-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younghoon Sohn ,  Jinsung Kim ,  Yusin Yang ,  Chungsam Jun

IPC: H01L21/66 ,  H01L21/768 ,  H01L21/027 ,  H01L21/311 ,  H01L23/00 ,  H01L21/48 ,  H01L21/683 ,  H01L21/56 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L22/12 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/4846 ,  H01L21/565 ,  H01L21/67259 ,  H01L21/6835 ,  H01L21/76802 ,  H01L21/76895 ,  H01L22/20 ,  H01L24/06 ,  H01L24/11 ,  H01L2221/68345 ,  H01L2224/02311 ,  H01L2224/13024 ,  H01L2224/14131 ,  H01L2924/1433 ,  H01L2924/1434 ,  H01L2924/15153 ,  H01L2924/152 ,  H01L2924/15747

Abstract: A method of fabricating a package includes providing a mold substrate supporting dies in cavities of a fan-out substrate, detecting positions of the dies with respect to the fan-out substrate, and forming interconnection lines. At least one of the interconnection lines includes a first portion extending from the fan-out substrate to a target position on the cavity disposed between the fan-out substrate and one of the dies the one of the dies disposed at a detected position different from the target position, and a second portion extending from the one die to the fan-out substrate.

公开(公告)号：US09466537B2

公开(公告)日：2016-10-11

申请号：US14988991

申请日：2016-01-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minkook Kim ,  Wooseok Ko ,  Yusin Yang ,  Sangkil Lee ,  Chungsam Jun

IPC: H01L21/00 ,  H01L21/66

CPC classification number: H01L22/12 ,  H01L27/11565 ,  H01L27/11582

Abstract: A method of inspecting a semiconductor device includes providing a substrate, on which a mold layer with a plurality of mold openings is provided, milling the mold layer in a direction inclined at a predetermined angle with respect to a direction normal to a top surface of the substrate, such that an inclined cutting surface exposing milled mold openings is formed, the milled mold openings including first milling openings along a first column extending in a first direction and having different heights, obtaining image data of the cutting surface, the image data including first contour images of the first milling openings, and obtaining a first process parameter, which represents an extent of bending of the mold openings according to a distance from a top surface of the substrate, using positions of center points of the first contour images.

Abstract translation: 一种检查半导体器件的方法包括提供一个衬底，在其上提供具有多个模具开口的模具层，在相对于垂直于该顶部表面的方向倾斜预定角度的方向上铣削模具层 基板，使得形成露出铣削模具开口的倾斜切割表面，所述铣削模具开口包括沿着第一方向延伸并具有不同高度的第一列的第一铣削开口，获得切割表面的图像数据，所述图像数据包括第一 并且使用第一轮廓图像的中心点的位置获得第一加工参数，该第一加工参数代表与基材顶表面距离的距离的模具开口的弯曲程度。