Abstract:
A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device.
Abstract:
A method of manufacturing a ceramic dielectric, including: heat-treating a barium precursor or a strontium precursor, a titanium precursor, and a donor element precursor to obtain a conducting or semiconducting oxide, preparing a mixture including the conducting or semiconducting oxide and a liquid-phase acceptor element precursor, and sintering the mixture to form a ceramic dielectric, wherein the ceramic dielectric includes a plurality of grains and a grain boundary between adjacent grains, and wherein the plurality of grains including an insulating oxide comprising an acceptor element derived from the acceptor element precursor.
Abstract:
A two-dimensional perovskite material, a dielectric material including the same, and a multi-layered capacitor. The two-dimensional perovskite material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of a plurality of the monolayer nanosheets, or a combination thereof, wherein the two-dimensional perovskite material a first phase having a two-dimensional crystal structure is included in an amount of greater than or equal to about 80 volume %, based on 100 volume % of the two-dimensional perovskite material, and the two-dimensional perovskite material is represented by Chemical Formula 1.
Abstract:
A conductive component including: a substrate, a first layer comprising a plurality of island structures disposed on the substrate, wherein the island structures include graphene; and a second layer disposed on the first layer, wherein the second layer includes a plurality of conductive nanowires. Also, an electronic device including the conductive component.
Abstract:
Provided are a dielectric material including a composite represented by Formula 1, a device including the same, and a method of preparing the dielectric material: xAB3.(1−x)(BiaNab)TiO3 [Formula 1] wherein, in Formula 1, A is at least one element selected from among lanthanum group elements, rare earth metal elements, and alkaline earth metal elements, B is at least one element selected from transition metal elements, 0.1
Abstract:
A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device.
Abstract:
A ceramic dielectric including: a bulk dielectric including barium (Ba) and titanium (Ti); a ceramic nanosheet; and a composite dielectric of the bulk dielectric and the ceramic nanosheet.
Abstract:
A transparent electrode including: a first layer including a thermosetting copolymer including a first repeating unit having an aromatic moiety as a pendant group or incorporated in a backbone of the copolymer and a second repeating unit capable of lowering a curing temperature, a combination of a first polymer including the first repeating unit and a second polymer including the second repeating unit, or a combination thereof; a second layer disposed directly on one side of the first layer, wherein the second layer includes graphene; and a third layer disposed on the second layer, wherein the third layer includes an electrically conductive metal nanowire.
Abstract:
An aqueous composition including: a conductive metal nanoparticle having an organic compound disposed on a surface of the conductive metal nanoparticle; a conductive metal nanowire; and a solvent including water and optionally an alcohol.
Abstract:
An interconnect structure including a dielectric layer having a trench structure; a conductive wiring including a metal compound represented by Chemical Formula 1 disposed within the trench structure (conductive interconnect), and air gap disposed between the conductive wiring. The trench structure has a line width of less than or equal to about 10 nm and an aspect ratio of greater than or equal to about 3. MXa Chemical Formula 1 In Chemical Formula 1, M is at least one metal of Zr, Nb, Cu, Ru, Al, Co, W, Mo, Ti, Ta, Ni, Pt, Cr, Rh, Ir, Pd, or Os, X is at least one element of C, N, P, As, S, Se, or Te, and a is a number determined by the stoichiometry of M and X.