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公开(公告)号:US20200217974A1
公开(公告)日:2020-07-09
申请号:US16825293
申请日:2020-03-20
Inventor: Garam PARK , Tae Gon KIM , Nayoun WON , Shin Ae JUN , Soo Kyung KWON , Seon-Yeong KIM , Shang Hyeun PARK , Jooyeon AHN , Yuho WON , Eun Joo JANG , Hyo Sook JANG
Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85.
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公开(公告)号:US20190211265A1
公开(公告)日:2019-07-11
申请号:US16245594
申请日:2019-01-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Garam PARK , Tae Gon KIM , Nayoun WON , Shin Ae JUN , Soo Kyung KWON , Seon-Yeong KIM , Shang Hyeun PARK , Jooyeon AHN , Yuho WON , Eun Joo JANG , Hyo Sook JANG
IPC: C09K11/88 , C09K11/02 , H01L27/32 , F21V8/00 , G02F1/1335
CPC classification number: C09K11/883 , B82Y20/00 , B82Y40/00 , C09K11/025 , C09K11/565 , C09K11/70 , G02B6/005 , G02F1/133514 , G02F1/133617 , G02F2001/133614 , G02F2202/36 , H01L27/322 , H05B33/14
Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85.
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公开(公告)号:US20170088775A1
公开(公告)日:2017-03-30
申请号:US15251643
申请日:2016-08-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Garam PARK , Eun Joo JANG , Yongwook KIM , Jihyun MIN , Hyo Sook JANG , Shin Ae JUN , Taekhoon KIM , Yuho WON
CPC classification number: C09K11/883 , B82Y20/00 , C09K11/02 , C09K11/70 , Y10S977/774 , Y10S977/95
Abstract: A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.
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公开(公告)号:US20240176171A1
公开(公告)日:2024-05-30
申请号:US18429592
申请日:2024-02-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Tae Gon KIM , Garam PARK , Jooyeon AHN , Shang Hyeun PARK , Shin Ae JUN
IPC: G02F1/017 , B82Y20/00 , C09K11/02 , C09K11/08 , C09K11/62 , C09K11/88 , H01L33/06 , H01L33/28 , H01L33/30 , H01L33/34 , H10K50/115
CPC classification number: G02F1/01716 , B82Y20/00 , C09K11/02 , C09K11/025 , C09K11/0811 , C09K11/0883 , C09K11/62 , C09K11/883 , H01L33/06 , H01L33/28 , H01L33/30 , H01L33/34 , H10K50/115 , G02F1/01791
Abstract: A quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a Lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.
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公开(公告)号:US20230350237A1
公开(公告)日:2023-11-02
申请号:US18220364
申请日:2023-07-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Tae Gon KIM , Garam PARK , Jooyeon AHN , Shang Hyeun PARK , Shin Ae JUN
IPC: G02F1/017 , B82Y20/00 , C09K11/88 , H01L33/06 , H01L33/28 , H01L33/30 , H01L33/34 , C09K11/02 , C09K11/08 , C09K11/62 , H10K50/115
CPC classification number: G02F1/01716 , B82Y20/00 , C09K11/883 , H01L33/06 , H01L33/28 , H01L33/30 , H01L33/34 , C09K11/025 , C09K11/02 , C09K11/0883 , C09K11/62 , C09K11/0811 , H10K50/115 , G02F1/01791
Abstract: A quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a Lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.
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公开(公告)号:US20220285445A1
公开(公告)日:2022-09-08
申请号:US17686934
申请日:2022-03-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Tae Gon KIM , Shin Ae JUN , Deukseok CHUNG , Garam PARK , Sung Hun LEE , Byoung Ki CHOI
Abstract: A display panel may include a light emitting panel, and a color conversion panel. The light emitting panel is configured to emit incident light including a first light and a second light, a luminescent peak wavelength of the first light may be greater than or equal to about 450 nm and less than or equal to about 480 nm and a luminescent peak wavelength of the second light may be greater than or equal to about 500 nm and less than or equal to about 580 nm. The color conversion panel includes a color conversion layer including a conversion region, and optionally, a partition wall defining each region of the color conversion panel. The color conversion region includes a first region corresponding to a red pixel, and the first region include a first composite including a matrix and a plurality of luminescent nanostructures dispersed in the matrix, and in the UV-Vis absorption spectrum, an absorbance ratio at a wavelength of 520 nm with respect to a wavelength of 350 nm may be greater than or equal to about 0.04:1.
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17.
公开(公告)号:US20220145178A1
公开(公告)日:2022-05-12
申请号:US17583305
申请日:2022-01-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Garam PARK , Tae Gon KIM , Jooyeon AHN , Ji-Yeong KIM , Nayoun WON , Shin Ae JUN
Abstract: Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.
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18.
公开(公告)号:US20200172806A1
公开(公告)日:2020-06-04
申请号:US16507406
申请日:2019-07-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Garam PARK , Tae Gon KIM , Jooyeon AHN , Ji-Yeong KIM , Nayoun WON , Shin Ae JUN
IPC: C09K11/88 , C09K11/02 , H01L27/32 , G02F1/1335
Abstract: Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.
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公开(公告)号:US20190006556A1
公开(公告)日:2019-01-03
申请号:US16111848
申请日:2018-08-24
Applicant: Samsung Electronics Co., Ltd.
Inventor: Garam PARK , Tae Hyung KIM , Eun Joo JANG , Hyo Sook JANG , Shin Ae JUN , Yongwook KIM , Taekhoon KIM , Jihyun MIN , Yuho WON
IPC: H01L33/04 , C09K11/88 , C09K11/70 , C09K11/61 , C09K11/02 , H01L33/32 , H01L33/30 , H01L33/28 , H01L33/24 , H01L33/34
CPC classification number: H01L33/04 , C09K11/025 , C09K11/615 , C09K11/70 , C09K11/883 , H01L33/24 , H01L33/28 , H01L33/30 , H01L33/32 , H01L33/34
Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.
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20.
公开(公告)号:US20180044583A1
公开(公告)日:2018-02-15
申请号:US15672608
申请日:2017-08-09
Inventor: Ha Il KWON , Tae Gon KIM , Shang Hyeun PARK , Eun Joo JANG , Shin Ae JUN , Garam PARK
CPC classification number: C09K11/02 , C08K3/16 , C08K3/30 , C08K9/04 , C08K2003/168 , C08K2003/3036 , C09K11/562 , G02F1/1336 , G02F2001/133614 , G02F2201/50
Abstract: A composition including a plurality of quantum dots; a binder polymer; a thiol compound having at least two thiol groups; a polyvalent metal compound; a polymerizable monomer having a carbon-carbon double bond; a photoinitiator; and a solvent.
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