公开(公告)号：US10763254B2

公开(公告)日：2020-09-01

申请号：US15333545

申请日：2016-10-25

申请人： Samsung Electronics Co., Ltd.

发明人： Sung Soo Kim ,  Gi Gwan Park ,  Jung Hun Choi ,  Koung Min Ryu ,  Sun Jung Lee

IPC分类号： H01L27/088 ,  H01L21/8234 ,  H01L23/485 ,  H01L23/528 ,  H01L29/423 ,  H01L27/092 ,  H01L29/739

摘要： A semiconductor device includes a substrate including a first region, and a second region, a first gate structure and a second gate structure on the substrate of the first region, a third gate structure and a fourth gate structure on the substrate of the second region, a first interlayer insulating film on the substrate of the first region and including a first lower interlayer insulating film and a first upper interlayer insulating film, a second interlayer insulating film on the substrate of the second region and including a second lower interlayer insulating film and a second upper interlayer insulating film, a first contact between the first gate structure and the second gate structure and within the first interlayer insulating film, and a second contact formed between the third gate structure and the fourth gate structure and within the second interlayer insulating film.

公开(公告)号：US10431583B2

公开(公告)日：2019-10-01

申请号：US15430265

申请日：2017-02-10

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Ju Youn Kim ,  Gi Gwan Park

IPC分类号： H01L29/423 ,  H01L27/088 ,  H01L29/49 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/66 ,  H01L29/08

摘要： A semiconductor device is provided. The semiconductor device includes a substrate including a first region and a second region. First and second dielectric films are positioned above the substrate in the first region and the second region, respectively. First and second gate stacks are disposed on the first and second dielectric films, respectively. The first gate stack includes a first TiAlC film in direct contact with the first dielectric film, and a first barrier film and a first metal film sequentially stacked on the first TiAlC film. The second gate stack includes a first LaO film in direct contact with the second dielectric film. A second TiAlC film, a second barrier film, and a second metal film are sequentially stacked on the first LaO film.

公开(公告)号：US09679978B2

公开(公告)日：2017-06-13

申请号：US15272456

申请日：2016-09-22

申请人： Samsung Electronics Co., Ltd.

发明人： Ki Hwan Kim ,  Jung Gun You ,  Gi Gwan Park ,  Dong Suk Shin ,  Jin Wook Kim

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L29/417 ,  H01L27/088 ,  H01L29/78 ,  H01L29/45 ,  H01L29/66 ,  H01L21/8234

CPC分类号： H01L29/41791 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823821 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/0673 ,  H01L29/456 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

摘要： A semiconductor device includes a substrate having first and second regions, a first fin-type pattern and a second fin-type pattern formed in the first region and extending in a first direction, and a third fin-type pattern and a fourth fin-type pattern formed in the second region and extending in a third direction. A first source/drain is formed on the first fin-type pattern and a second source/drain region is formed on the second fin-type pattern. Each of first and second source/drains have a cross section defining a same convex polygonal shape. A third source/drain is formed on the third fin-type pattern and a fourth source/drain region is formed on the fourth fin-type pattern. Cross-sections of the third and fourth source/drains define different convex polygonal shapes from one another.

公开(公告)号：US11908858B2

公开(公告)日：2024-02-20

申请号：US16937912

申请日：2020-07-24

申请人： Samsung Electronics Co., Ltd.

发明人： Sung Soo Kim ,  Gi Gwan Park ,  Jung Hun Choi ,  Koung Min Ryu ,  Sun Jung Lee

IPC分类号： H01L27/088 ,  H01L21/8234 ,  H01L23/485 ,  H01L23/528 ,  H01L29/423 ,  H01L27/092 ,  H01L29/739

CPC分类号： H01L27/0886 ,  H01L21/823431 ,  H01L21/823456 ,  H01L21/823475 ,  H01L23/485 ,  H01L23/5283 ,  H01L29/42364 ,  H01L29/42372 ,  H01L27/0924 ,  H01L29/7391

摘要： A semiconductor device includes a substrate including a first region, and a second region, a first gate structure and a second gate structure on the substrate of the first region, a third gate structure and a fourth gate structure on the substrate of the second region, a first interlayer insulating film on the substrate of the first region and including a first lower interlayer insulating film and a first upper interlayer insulating film, a second interlayer insulating film on the substrate of the second region and including a second lower interlayer insulating film and a second upper interlayer insulating film, a first contact between the first gate structure and the second gate structure and within the first interlayer insulating film, and a second contact formed between the third gate structure and the fourth gate structure and within the second interlayer insulating film.

公开(公告)号：US11355492B2

公开(公告)日：2022-06-07

申请号：US16117065

申请日：2018-08-30

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Ju Youn Kim ,  Gi Gwan Park

IPC分类号： H01L27/088 ,  H01L29/78 ,  H01L49/02 ,  H01L29/423 ,  H01L21/8234 ,  H01L27/11 ,  H01L29/49 ,  H01L29/66

摘要： A semiconductor device including a substrate with a first region and a second region and first and second transistors in the first and second regions, respectively. The first transistor includes a first gate insulating layer on the substrate, a first etch-stop layer, and a first work function layer on the first etch-stop layer. The second transistor includes a second gate insulating layer on the substrate, a second etch-stop layer, and a second work function layer on the second etch-stop layer. At least one of the first and second work function layers is chamfered.

公开(公告)号：US10475707B2

公开(公告)日：2019-11-12

申请号：US15292790

申请日：2016-10-13

申请人： Samsung Electronics Co., Ltd.

发明人： Gi Gwan Park ,  Jung Gun You ,  Ki II Kim ,  Sug Hyun Sung ,  Myung Yoon Um

IPC分类号： H01L21/8238 ,  H01L21/762 ,  H01L29/66 ,  H01L27/092 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/165

摘要： A method of manufacturing a semiconductor device includes forming a first fin-type pattern and a second fin-type pattern which are separated by a first trench between facing ends thereof, forming a first insulating layer filling the first trench, removing a portion of the first insulating layer to form a second trench on the first insulating layer, and forming a third trench by enlarging a width of the second trench.

公开(公告)号：US10083965B2

公开(公告)日：2018-09-25

申请号：US15850183

申请日：2017-12-21

申请人： Samsung Electronics Co., Ltd.

发明人： Ki Hwan Kim ,  Gi Gwan Park ,  Jung Gun You ,  Dong Suk Shin ,  Hyun Yul Choi

IPC分类号： H01L27/00 ,  H01L27/092 ,  H01L21/84 ,  H01L27/088 ,  H01L27/12 ,  H01L29/06 ,  H01L29/08 ,  H01L29/165 ,  H01L29/167 ,  H01L29/417 ,  H01L29/45 ,  H01L29/78 ,  H01L27/02

CPC分类号： H01L27/0924 ,  H01L21/823425 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0207 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/167 ,  H01L29/41766 ,  H01L29/41783 ,  H01L29/41791 ,  H01L29/456 ,  H01L29/78 ,  H01L29/7848 ,  H01L29/785

摘要： The semiconductor device includes a substrate comprising first and second regions, in the first region, first and second gate electrodes formed parallel to each other on the substrate, and being spaced apart from each other by a first distance, in the second region, third and fourth gate electrodes formed parallel to each other on the substrate, and being spaced apart from each other by a second distance which is greater than the first distance, in the first region, a first recess formed on the substrate between the first and second gate electrodes, in the second region, a second recess formed on the substrate between the third and fourth gate electrodes, a first epitaxial source/drain filling the first recess and a second epitaxial source/drain filling the second recess, wherein an uppermost portion of an upper surface of the first epitaxial source/drain is higher than an uppermost portion of an upper surface of the second epitaxial source/drain.

公开(公告)号：US10068904B2

公开(公告)日：2018-09-04

申请号：US15422897

申请日：2017-02-02

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Ju Youn Kim ,  Gi Gwan Park

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L27/0922 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/092 ,  H01L27/0924 ,  H01L28/00

摘要： A semiconductor device includes first and second active regions and a field insulating film contacting between the first and second active regions, and a gate electrode structure traversing the first and second active regions and the field insulating film, wherein the gate electrode structure includes a first portion positioned across the first active region and the field insulating film, a second portion positioned across the second active region and the field insulating film, and a third portion contacting the first and second portions. The gate electrode structure includes a gate electrode having an insertion film traversing the first and second active regions and the field insulating film second active region, and a filling film on the insertion film. A thickness of the gate electrode in the third portion is different from a thickness of the gate electrode in the first portion and the second portion.

公开(公告)号：US09871042B2

公开(公告)日：2018-01-16

申请号：US15368723

申请日：2016-12-05

申请人： Samsung Electronics Co., Ltd.

发明人： Ki Hwan Kim ,  Gi Gwan Park ,  Jung Gun You ,  Dong Suk Shin ,  Hyun Yul Choi

IPC分类号： H01L27/00 ,  H01L27/092 ,  H01L29/78 ,  H01L29/08 ,  H01L29/417 ,  H01L27/02 ,  H01L29/167 ,  H01L29/165 ,  H01L29/06 ,  H01L29/45 ,  H01L27/088 ,  H01L27/12 ,  H01L21/84

CPC分类号： H01L27/0924 ,  H01L21/823425 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0207 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/167 ,  H01L29/41766 ,  H01L29/41783 ,  H01L29/41791 ,  H01L29/456 ,  H01L29/78 ,  H01L29/7848 ,  H01L29/785

摘要： A semiconductor device is provided. The semiconductor device includes a substrate comprising first and second regions, in the first region, first and second gate electrodes formed parallel to each other on the substrate, and being spaced apart from each other by a first distance, in the second region, third and fourth gate electrodes formed parallel to each other on the substrate, and being spaced apart from each other by a second distance which is greater than the first distance, in the first region, a first recess formed on the substrate between the first and second gate electrodes, in the second region, a second recess formed on the substrate between the third and fourth gate electrodes, a first epitaxial source/drain filling the first recess and a second epitaxial source/drain filling the second recess, wherein an uppermost portion of an upper surface of the first epitaxial source/drain is higher than an uppermost portion of an upper surface of the second epitaxial source/drain.

公开(公告)号：US20170179284A1

公开(公告)日：2017-06-22

申请号：US15384587

申请日：2016-12-20

申请人： Samsung Electronics Co., Ltd.

发明人： Ju Youn Kim ,  Gi Gwan Park

IPC分类号： H01L29/78 ,  H01L29/08 ,  H01L21/8238 ,  H01L29/16 ,  H01L29/165 ,  H01L29/06 ,  H01L27/092 ,  H01L29/161

CPC分类号： H01L29/7843 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848

摘要： A semiconductor device includes a substrate including a first region and a second region, a first fin-type pattern in the first region, a second fin-type pattern in the second region, a first gate structure intersecting the first fin-type pattern, the first gate structure including a first gate spacer, a second gate structure intersecting the second fin-type pattern, the second gate structure including a second gate spacer, a first epitaxial pattern formed on opposite sides of the first gate structure, on the first fin-type pattern, the first epitaxial pattern having a first impurity, a second epitaxial pattern formed on opposite sides of the second gate structure, on the second fin-type pattern, the second epitaxial pattern having a second impurity, a first silicon nitride film extending along a sidewall of the first gate spacer, and a first silicon oxide film extending along a sidewall of the first gate spacer.