公开(公告)号：US10157917B2

公开(公告)日：2018-12-18

申请号：US14974805

申请日：2015-12-18

Applicant: Samsung Electronics Co., Ltd

Inventor： Jung-Gun You ,  Se-Wan Park ,  Baik-Min Sung ,  Myung-Yoon Um

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/11

Abstract: A semiconductor device is provided. The semiconductor device may include a field insulating film on a substrate, a first fin type pattern which is formed on the substrate and protrudes upward from an upper surface of the field insulating film, and a gate electrode which intersects with the first fin type pattern on the field insulating film. The gate electrode may include a first portion and a second portion, the first portion being located on one side of the first fin type pattern and including a first terminal end of the gate electrode, and the second portion being located on the other side of the first fin type pattern. A height from the substrate to a lowest part of the first portion may be different than a height from the substrate to a lowest part of the second portion.

公开(公告)号：US09887194B2

公开(公告)日：2018-02-06

申请号：US14989876

申请日：2016-01-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Sug-Hyun Sung ,  Se-Wan Park

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/42376

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a fin which comprises long sides and a first short side, a first trench which is immediately adjacent the first short side of the fin and has a first depth, a second trench which is immediately adjacent the first trench and has a second depth greater than the first depth, a first protrusion structure which protrudes from a bottom of the first trench and extends side by side with the first short side, and a gate which is formed on the first protrusion structure to extend side by side with the first short side.

公开(公告)号：US09721950B2

公开(公告)日：2017-08-01

申请号：US15051860

申请日：2016-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Jae-Chul Kim

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/423 ,  H01L29/40 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L29/408 ,  H01L29/42364 ,  H01L29/785

Abstract: A semiconductor device including fin type patterns is provided. The semiconductor device includes a first fin type pattern, a field insulation layer disposed in vicinity of the first fin type pattern and having a first part and a second part, the first part protruding from the second part, a first dummy gate stack formed on the first part of the field insulation layer and including a first dummy gate insulation layer having a first thickness, and a first gate stack formed on the second part of the field insulation layer to intersect the first fin type pattern and including a first gate insulation layer having a second thickness different from the first thickness.

公开(公告)号：US20170133264A1

公开(公告)日：2017-05-11

申请号：US15220094

申请日：2016-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-Il Kim ,  Gi-Gwan Park ,  Jung-Gun You ,  Hyung-Dong Kim ,  Sug-Hyun Sung ,  Myung-Yoon Um

IPC: H01L21/762 ,  H01L27/11 ,  H01L29/78 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L21/76229 ,  H01L27/1104 ,  H01L29/0653 ,  H01L29/66795 ,  H01L29/7843 ,  H01L29/7853

Abstract: A method of fabricating a semiconductor device includes forming a plurality of mask patterns comprising a real mask pattern and a dummy mask pattern on a substrate, removing the dummy mask pattern and etching the substrate using the real mask pattern as a mask to form a first trench, a second trench, and a fin-type pattern defined by the first trench and the second trench. The second trench contacting the fin-type pattern comprises a smooth pattern which is convex and positioned between a bottom surface and a side surface of the second trench, a first concave portion which is positioned between the side surface of the second trench and the smooth pattern, and a second concave portion which is positioned between the convex portion and the bottom surface of the second trench.

公开(公告)号：US09553089B2

公开(公告)日：2017-01-24

申请号：US14995457

申请日：2016-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Gun You ,  Hyung-Jong Lee ,  Sung-Min Kim ,  Chong-Kwang Chang

IPC: H01L27/088 ,  H01L23/528 ,  H01L29/06

CPC classification number: H01L27/0886 ,  H01L23/485 ,  H01L23/528 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/0649

Abstract: A semiconductor device, including first and second fin patterns separated by a first trench; a gate electrode intersecting the first and second fin patterns; and a contact on at least one side of the gate electrode, the contact contacting the first fin pattern, the contact having a bottom surface that does not contact the second fin pattern, a height from a bottom of the first trench to a topmost end of the first fin pattern in a region in which the contact intersects the first fin pattern being a first height, and a height from the bottom of the first trench to a topmost end of the second fin pattern in a region in which an extension line of the contact extending along a direction in which the gate electrode extends intersects the second fin pattern being a second height, the first height being smaller than the second height.

Abstract translation: 一种半导体器件，包括由第一沟槽分隔的第一和第二鳍状图案; 与第一和第二鳍状图案相交的栅电极; 以及在所述栅极电极的至少一侧上的触点，所述触点接触所述第一鳍状图案，所述触点具有不接触所述第二鳍状图案的底表面，从所述第一沟槽的底部到最顶端的高度 在第一鳍状物的第一鳍状物与第一鳍状物的第一高度相交的区域中的第一鳍状图案和从第一沟槽的底部到第二鳍状图案的最上端的高度， 沿着栅极延伸的方向延伸的接触部将第二翅片图案与第二高度相交，第一高度小于第二高度。

公开(公告)号：US11956937B2

公开(公告)日：2024-04-09

申请号：US16751460

申请日：2020-01-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-Il Kim ,  Jung-Gun You ,  Gi-Gwan Park

IPC: H01L27/092 ,  H01L21/8238 ,  H01L27/105 ,  H01L29/78 ,  H10B10/00

CPC classification number: H10B10/12 ,  H01L21/823821 ,  H01L27/0924 ,  H01L27/105 ,  H01L29/7851 ,  H01L29/7853 ,  H01L29/7854

Abstract: A semiconductor device can include a field insulating film on a substrate and a fin-type pattern of a particular material, on the substrate, having a first sidewall and an opposing second sidewall. The fin-type pattern can include a first portion of the fin-type pattern that protrudes from an upper surface of the field insulating film and a second portion of the fin-type pattern disposed on the first portion. A third portion of the fin-type pattern can be disposed on the second portion where the third portion can be capped by a top rounded surface of the fin-type pattern and the first sidewall can have an undulated profile that spans the first, second and third portions.

公开(公告)号：US20200219875A1

公开(公告)日：2020-07-09

申请号：US16820853

申请日：2020-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Se-Wan Park ,  Baik-Min Sung ,  Myung-Yoon Um

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423

Abstract: A semiconductor device -is provided. The semiconductor device includes a field insulating film on a substrate, a first fin type pattern which is formed on the substrate and protrudes upward from an upper surface of the field insulating film, and a gate electrode which intersects with the first fin type pattern on the field insulating film and includes a first portion and a second portion, the first portion being located on one side of the first fin type pattern and including a first terminal end of the gate electrode, and the second portion being located on the other side of the first fin type pattern, wherein a height from the substrate to a lowest part of the first portion is different from a height from the substrate to a lowest part of the second portion.

公开(公告)号：US20190115344A1

公开(公告)日：2019-04-18

申请号：US16211851

申请日：2018-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  SUG-HYUN SUNG

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/7854

Abstract: Provided is a semiconductor device and a fabricating method thereof. The semiconductor device includes a first trench having a first depth to define a fin, a second trench formed directly adjacent the first trench having a second depth that is greater than the first depth, a field insulation layer filling a portion of the first trench and a portion of the second trench, and a protrusion structure protruding from a bottom of the first trench and being lower than a surface of the field insulation layer.

公开(公告)号：US20190081043A1

公开(公告)日：2019-03-14

申请号：US16189296

申请日：2018-11-13

Applicant: Samsung Electronics Co., Ltd

Inventor： Jung-Gun You ,  Se-Wan Park ,  Baik-Min Sung ,  Myung-Yoon Um

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/11

Abstract: A semiconductor device is provided. The semiconductor device includes a field insulating film on a substrate, a first fin type pattern which is formed on the substrate and protrudes upward from an upper surface of the field insulating film, and a gate electrode which intersects with the first fin type pattern on the field insulating film and includes a first portion and a second portion, the first portion being located on one side of the first fin type pattern and including a first terminal end of the gate electrode, and the second portion being located on the other side of the first fin type pattern, wherein a height from the substrate to a lowest part of the first portion is different from a height from the substrate to a lowest part of the second portion.

公开(公告)号：US10199377B2

公开(公告)日：2019-02-05

申请号：US15461934

申请日：2017-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Se-Wan Park ,  Baik-Min Sung ,  Bo-Cheol Jeong

IPC: H01L29/06 ,  H01L29/78 ,  H01L27/088 ,  H01L21/762 ,  H01L21/311 ,  H01L21/8234

Abstract: Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.