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    Semiconductor Memory Devices and Manufacturing Methods Thereof
    11.
    发明申请
    Semiconductor Memory Devices and Manufacturing Methods Thereof 有权
    半导体存储器件及其制造方法

    公开(公告)号：US20150179658A1

    公开(公告)日：2015-06-25

    申请号：US14574907

    申请日：2014-12-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ki-Seok Lee ,  Jung-Hwan Park ,  Hyo-Jin Park ,  Kyu-Hyun Lee

    IPC: H01L27/115 ,  H01L21/28

    CPC classification number: H01L21/28008 ,  H01L27/10888 ,  H01L27/10891 ,  H01L27/10894 ,  H01L29/4236

    Abstract: A semiconductor memory device and a manufacturing method of the semiconductor memory device are provided. The semiconductor memory device can include a substrate in which a cell area and a peripheral area are defined, a first gate insulating layer on the peripheral area, and a poly gate layer on the first gate insulating layer to form a combined stack, wherein the combined stack of the first gate insulating layer and the first poly gate layer is absent from the cell area.

    Abstract translation: 提供半导体存储器件和半导体存储器件的制造方法。 半导体存储器件可以包括其中限定了单元区域和外围区域的基板，外围区域上的第一栅极绝缘层，以及在第一栅极绝缘层上形成组合堆叠的多晶硅栅极层，其中组合 第一栅极绝缘层和第一多晶硅层的堆叠不存在于电池区域中。

    Buried channel transistor and method of forming the same
    12.
    发明授权
    Buried channel transistor and method of forming the same 有权
    掩埋沟道晶体管及其形成方法

    公开(公告)号：US08878299B2

    公开(公告)日：2014-11-04

    申请号：US13770573

    申请日：2013-02-19

    Applicant: Samsung Electronics Co. Ltd.

    Inventor： Ki-Seok Lee ,  Dae-Ik Kim

    IPC: H01L21/70 ,  H01L29/78 ,  H01L21/8234

    CPC classification number: H01L29/7827 ,  H01L21/823431 ,  H01L29/785

    Abstract: A semiconductor device may include a plurality of memory cells. The memory cells may be formed with respective fin shaped active regions with respective recesses formed therein. Thicknesses of the fins may be made relatively thicker around the recesses, such as by selective epitaxial growth around the recesses. The additional thicknesses may be asymmetrical so that portions of the fin on one side are larger than an opposite side. Related methods and systems are also disclosed.

    Abstract translation: 半导体器件可以包括多个存储单元。 存储单元可以形成有各自的翅片形状的有源区域，其中形成有相应的凹部。 散热片的厚度可以围绕凹部相对较厚，例如通过围绕凹部的选择性外延生长。 附加厚度可以是不对称的，使得一侧的翅片的部分大于相对侧。 还公开了相关方法和系统。

    Semiconductor devices
    13.
    发明授权
    Semiconductor devices 有权

    公开(公告)号：US11417665B2

    公开(公告)日：2022-08-16

    申请号：US17060026

    申请日：2020-09-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ki-Seok Lee ,  Bomg-Soo Kim ,  Ji-Young Kim ,  Sung-Hee Han ,  Yoo-Sang Hwang

    IPC: H01L27/108 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L21/764

    Abstract: A semiconductor device includes a plurality of conductive structures arranged on a substrate and spaced apart from each other in a second direction substantially perpendicular to a first direction, in which each of the plurality of conductive structures extends in the first direction. A plurality of contact structures are arranged between the conductive structures in an alternating arrangement and spaced apart from each other in the first direction. A plurality of insulation structures are arranged in a space between the conductive structures and between the contact structures. A plurality of air spacers are arranged between the alternating arrangement of the plurality of conductive structures and the plurality of contact structures, respectively and spaced apart from each other in the first direction.

    Apparatus and method for detecting counterfeit advertiser in wireless communication system
    14.
    发明授权
    Apparatus and method for detecting counterfeit advertiser in wireless communication system 有权

    公开(公告)号：US10728128B2

    公开(公告)日：2020-07-28

    申请号：US16447233

    申请日：2019-06-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dae-Kyu Choi ,  Sin-Seok Seo ,  Ki-Seok Lee ,  Do-Hy Hong

    IPC: H04L12/28 ,  H04L12/26 ,  H04W12/12 ,  H04W4/80 ,  H04W84/18 ,  H04W12/00

    Abstract: The present disclosure relates to a sensor network, machine type communication (MTC), machine-to-machine (M2M) communication, and technology for internet of things (IoT). The present disclosure may be applied to intelligent services based on the above technologies, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A method for detecting a counterfeit advertiser by a server includes detecting a random delay time or a cumulative interval for a reference device based on a time stamp for an advertisement packet received from the reference device, and detecting a random delay time or a cumulative interval for a receiving device other than the reference device based on a time stamp for an advertisement packet received from the receiving device.

    BURIED CHANNEL TRANSISTOR AND METHOD OF FORMING THE SAME
    17.
    发明申请
    BURIED CHANNEL TRANSISTOR AND METHOD OF FORMING THE SAME 有权

    公开(公告)号：US20130299834A1

    公开(公告)日：2013-11-14

    申请号：US13770573

    申请日：2013-02-19

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ki-Seok Lee ,  Dae-Ik Kim

    IPC: H01L29/78

    CPC classification number: H01L29/7827 ,  H01L21/823431 ,  H01L29/785

    Abstract: A semiconductor device may include a plurality of memory cells. The memory cells may be formed with respective fin shaped active regions with respective recesses formed therein. Thicknesses of the fins may be made relatively thicker around the recesses, such as by selective epitaxial growth around the recesses. The additional thicknesses may be asymmetrical so that portions of the fin on one side are larger than an opposite side. Related methods and systems are also disclosed.

    Abstract translation: 半导体器件可以包括多个存储单元。 存储单元可以形成有各自的翅片形状的有源区域，其中形成有相应的凹部。 散热片的厚度可以围绕凹部相对较厚，例如通过围绕凹部的选择性外延生长。 附加厚度可以是不对称的，使得一侧的翅片的部分大于相对侧。 还公开了相关方法和系统。

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