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11.
公开(公告)号:US20150179658A1
公开(公告)日:2015-06-25
申请号:US14574907
申请日:2014-12-18
Applicant: Samsung Electronics Co., Ltd.
Inventor: Ki-Seok Lee , Jung-Hwan Park , Hyo-Jin Park , Kyu-Hyun Lee
IPC: H01L27/115 , H01L21/28
CPC classification number: H01L21/28008 , H01L27/10888 , H01L27/10891 , H01L27/10894 , H01L29/4236
Abstract: A semiconductor memory device and a manufacturing method of the semiconductor memory device are provided. The semiconductor memory device can include a substrate in which a cell area and a peripheral area are defined, a first gate insulating layer on the peripheral area, and a poly gate layer on the first gate insulating layer to form a combined stack, wherein the combined stack of the first gate insulating layer and the first poly gate layer is absent from the cell area.
Abstract translation: 提供半导体存储器件和半导体存储器件的制造方法。 半导体存储器件可以包括其中限定了单元区域和外围区域的基板,外围区域上的第一栅极绝缘层,以及在第一栅极绝缘层上形成组合堆叠的多晶硅栅极层,其中组合 第一栅极绝缘层和第一多晶硅层的堆叠不存在于电池区域中。
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12.
公开(公告)号:US08878299B2
公开(公告)日:2014-11-04
申请号:US13770573
申请日:2013-02-19
Applicant: Samsung Electronics Co. Ltd.
Inventor: Ki-Seok Lee , Dae-Ik Kim
IPC: H01L21/70 , H01L29/78 , H01L21/8234
CPC classification number: H01L29/7827 , H01L21/823431 , H01L29/785
Abstract: A semiconductor device may include a plurality of memory cells. The memory cells may be formed with respective fin shaped active regions with respective recesses formed therein. Thicknesses of the fins may be made relatively thicker around the recesses, such as by selective epitaxial growth around the recesses. The additional thicknesses may be asymmetrical so that portions of the fin on one side are larger than an opposite side. Related methods and systems are also disclosed.
Abstract translation: 半导体器件可以包括多个存储单元。 存储单元可以形成有各自的翅片形状的有源区域,其中形成有相应的凹部。 散热片的厚度可以围绕凹部相对较厚,例如通过围绕凹部的选择性外延生长。 附加厚度可以是不对称的,使得一侧的翅片的部分大于相对侧。 还公开了相关方法和系统。
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公开(公告)号:US11417665B2
公开(公告)日:2022-08-16
申请号:US17060026
申请日:2020-09-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Ki-Seok Lee , Bomg-Soo Kim , Ji-Young Kim , Sung-Hee Han , Yoo-Sang Hwang
IPC: H01L27/108 , H01L21/768 , H01L23/528 , H01L23/532 , H01L21/764
Abstract: A semiconductor device includes a plurality of conductive structures arranged on a substrate and spaced apart from each other in a second direction substantially perpendicular to a first direction, in which each of the plurality of conductive structures extends in the first direction. A plurality of contact structures are arranged between the conductive structures in an alternating arrangement and spaced apart from each other in the first direction. A plurality of insulation structures are arranged in a space between the conductive structures and between the contact structures. A plurality of air spacers are arranged between the alternating arrangement of the plurality of conductive structures and the plurality of contact structures, respectively and spaced apart from each other in the first direction.
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14.
公开(公告)号:US10728128B2
公开(公告)日:2020-07-28
申请号:US16447233
申请日:2019-06-20
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dae-Kyu Choi , Sin-Seok Seo , Ki-Seok Lee , Do-Hy Hong
Abstract: The present disclosure relates to a sensor network, machine type communication (MTC), machine-to-machine (M2M) communication, and technology for internet of things (IoT). The present disclosure may be applied to intelligent services based on the above technologies, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A method for detecting a counterfeit advertiser by a server includes detecting a random delay time or a cumulative interval for a reference device based on a time stamp for an advertisement packet received from the reference device, and detecting a random delay time or a cumulative interval for a receiving device other than the reference device based on a time stamp for an advertisement packet received from the receiving device.
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15.
公开(公告)号:US09929925B2
公开(公告)日:2018-03-27
申请号:US15400259
申请日:2017-01-06
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dae-Kyu Choi , Sin-Seok Seo , Ki-Seok Lee , Do-Hy Hong
CPC classification number: H04L43/0852 , H04L43/106 , H04W4/80 , H04W12/12 , H04W84/18
Abstract: The present disclosure relates to a sensor network, machine type communication (MTC), machine-to-machine (M2M) communication, and technology for internet of things (IoT). The present disclosure may be applied to intelligent services based on the above technologies, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A method for detecting a counterfeit advertiser by a server includes detecting a random delay time or a cumulative interval for a reference device based on a time stamp for an advertisement packet received from the reference device, and detecting a random delay time or a cumulative interval for a receiving device other than the reference device based on a time stamp for an advertisement packet received from the receiving device.
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16.
公开(公告)号:US09634012B2
公开(公告)日:2017-04-25
申请号:US15015651
申请日:2016-02-04
Applicant: Samsung Electronics Co., Ltd.
Inventor: Tae-Jin Park , Chan-sic Yoon , Ki-Seok Lee , Hyeon-Ok Jung , Dae-Ik Kim , Bong-Soo Kim , Yong-Kwan Kim , Eun-Jung Kim , Se-Myeong Jang , Min-su Choi , Sung-Hee Han , Yoo-Sang Hwang
IPC: H01L21/311 , H01L27/108 , H01L21/308
CPC classification number: H01L27/10894 , H01L27/10852 , H01L27/10855 , H01L27/10876 , H01L27/10885
Abstract: In a method of forming active patterns, first patterns are formed in a first direction on a cell region of a substrate, and a second pattern is formed on a peripheral circuit region of the substrate. The first pattern extends in a third direction crossing the first direction. First masks are formed in the first direction on the first patterns, and a second mask is formed on the second pattern. The first mask extends in a fourth direction crossing the third direction. Third masks are formed between the first masks extending in the fourth direction. The first and second patterns are etched using the first to third masks to form third and fourth patterns. Upper portions of the substrate are etched using the third and fourth patterns to form first and second active patterns in the cell and peripheral circuit regions.
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公开(公告)号:US20130299834A1
公开(公告)日:2013-11-14
申请号:US13770573
申请日:2013-02-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Ki-Seok Lee , Dae-Ik Kim
IPC: H01L29/78
CPC classification number: H01L29/7827 , H01L21/823431 , H01L29/785
Abstract: A semiconductor device may include a plurality of memory cells. The memory cells may be formed with respective fin shaped active regions with respective recesses formed therein. Thicknesses of the fins may be made relatively thicker around the recesses, such as by selective epitaxial growth around the recesses. The additional thicknesses may be asymmetrical so that portions of the fin on one side are larger than an opposite side. Related methods and systems are also disclosed.
Abstract translation: 半导体器件可以包括多个存储单元。 存储单元可以形成有各自的翅片形状的有源区域,其中形成有相应的凹部。 散热片的厚度可以围绕凹部相对较厚,例如通过围绕凹部的选择性外延生长。 附加厚度可以是不对称的,使得一侧的翅片的部分大于相对侧。 还公开了相关方法和系统。
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