公开(公告)号：US10573643B2

公开(公告)日：2020-02-25

申请号：US15686795

申请日：2017-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-ho Do ,  Sang-hoon Baek ,  Tae-joong Song ,  Jong-hoon Jung ,  Seung-young Lee

IPC: H01L27/088 ,  H01L23/528 ,  H01L29/78 ,  H01L27/07 ,  H01L27/02 ,  H01L29/417 ,  H01L23/522 ,  H01L29/08 ,  H01L29/10

Abstract: An integrated circuit having a vertical transistor includes first through fourth gate lines extending in a first direction and sequentially arranged in parallel with each other, a first top active region over the first through third gate lines and insulated from the second gate line, and a second top active region. The first top active region forms first and third transistors with the first and third gate lines respectively. The second top active region is over the second through fourth gate lines and insulated from the third gate line. The second top active region forms second and fourth transistors with the second and fourth gate lines respectively.

公开(公告)号：US10108772B2

公开(公告)日：2018-10-23

申请号：US15271883

申请日：2016-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-hoon Baek ,  Jae-woo Seo ,  Gi-young Yang ,  Dal-hee Lee ,  Sung-wee Cho

IPC: G06F17/50 ,  H01L29/66 ,  H01L23/528 ,  H01L27/02 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/8238

Abstract: Methods of generating an integrated circuit layout include forming a standard cell by providing a first active area adjacent to a first cell boundary line. The first active area is spaced apart from the first cell boundary line by a first distance. A second active area is provided adjacent to a second cell boundary line. The second cell boundary line opposes the first cell boundary line. The second active area is spaced apart from the second cell boundary line by a second distance. Fins are formed on the first and second active areas. The fins extend in a first direction and parallel to one another in a second direction substantially perpendicular to the first direction. The first cell boundary line is parallel to the fins. The first distance and the second distance remain constant when a number of the fins on the first and second active areas is changed.

公开(公告)号：US09852252B2

公开(公告)日：2017-12-26

申请号：US14801239

申请日：2015-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-hoon Baek ,  Tae-joong Song ,  Jae-ho Park ,  Gi-young Yang ,  Jin-tae Kim ,  Hyo-sig Won

IPC: G06F17/50

CPC classification number: G06F17/5072 ,  G06F17/5031 ,  G06F17/5077 ,  G06F2217/84

Abstract: A standard cell library and a method of using the same may include information regarding a plurality of standard cells stored on a non-transitory computer-readable storage medium, wherein at least one of the plurality of standard cells includes a pin through which an input signal or an output signal of the at least one standard cell passes and including first and second regions perpendicular to a stack direction. When the via is disposed in the pin, the second region can provide a resistance value of the via smaller than that of the first region. The standard cell library may further include marker information corresponding to the second region.

公开(公告)号：US09837437B2

公开(公告)日：2017-12-05

申请号：US15612349

申请日：2017-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-hoon Baek ,  Sang-kyu Oh ,  Jung-Ho Do ,  Sun-young Park ,  Seung-young Lee ,  Hyo-sig Won

IPC: H01L27/118 ,  H01L29/78 ,  H01L27/02 ,  H01L29/423 ,  H01L29/66 ,  H01L27/092

CPC classification number: H01L27/11807 ,  H01L27/0207 ,  H01L27/0924 ,  H01L29/42384 ,  H01L29/6681 ,  H01L29/785 ,  H01L2027/11875

Abstract: An integrated circuit (IC) may include at least one cell including a plurality of conductive lines that extend in a first direction and are in parallel to each other in a second direction that is perpendicular to the first direction, first contacts respectively disposed at two sides of at least one conductive line from among the plurality of conductive lines, and a second contact disposed on the at least one conductive line and the first contacts and forming a single node by being electrically connected to the at least one conductive line and the first contacts.

公开(公告)号：US09830415B2

公开(公告)日：2017-11-28

申请号：US14799750

申请日：2015-07-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-kyu Oh ,  Sang-hoon Baek ,  Seung-young Lee ,  Tae-joong Song

IPC: G06F9/455 ,  G06F17/50

CPC classification number: G06F17/5072 ,  G06F17/5081 ,  G06F2217/82

Abstract: A method of designing a semiconductor integrated circuit (IC) is provided as follows. A standard cell library is generated. The standard cell library includes characteristic information for a plurality of standard cells. The characteristic information includes a characteristic of each standard cell. A characteristic change region is detected. The characteristic change region includes at least one of the plurality of standard cells by comparing characteristics of standard cells to be placed adjacent to the characteristic change region, based on the standard cell library. A characteristic of the at least one standard cell included in the detected characteristic change region is changed to one of the characteristics of the standard cells to be placed adjacent to the characteristic change region to update the standard cell library. A plurality of standard cells of the updated standard cell library is placed.

公开(公告)号：US09576978B2

公开(公告)日：2017-02-21

申请号：US14042900

申请日：2013-10-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-hoon Baek ,  Sang-Kyu Oh

IPC: H01L27/12 ,  H01L21/8234 ,  H01L21/84 ,  H01L29/66 ,  H01L27/088

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/845 ,  H01L23/5286 ,  H01L27/0207 ,  H01L27/1211 ,  H01L29/6681

Abstract: A semiconductor integrated circuit (IC) may comprise at least one cell comprising at least one fin field-effect transistor (FET). The at least one cell may comprise a plurality of fins that extend in a first direction and are arranged in parallel to each other in a second direction that is perpendicular to the first direction. A size of the at least one cell in the second direction may correspond to a number and a pitch of the plurality of fins.

Abstract translation: 半导体集成电路（IC）可以包括至少一个包括至少一个鳍状场效应晶体管（FET）的单元。 至少一个电池可以包括沿着第一方向延伸并且沿垂直于第一方向的第二方向彼此平行布置的多个散热片。 第二方向上的至少一个单元的尺寸可以对应于多个翅片的数量和间距。

公开(公告)号：US09460259B2

公开(公告)日：2016-10-04

申请号：US14832325

申请日：2015-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-hoon Baek ,  Jae-woo Seo ,  Gi-young Yang ,  Dal-hee Lee ,  Sung-wee Cho

IPC: G06F17/50 ,  H01L21/8234 ,  H01L21/8238

CPC classification number: G06F17/5072 ,  G06F17/50 ,  G06F17/5068 ,  G06F17/5077 ,  G06F17/5081 ,  G06F2217/06 ,  G06F2217/12 ,  G06F2217/78 ,  H01L21/823431 ,  H01L21/823821 ,  H01L23/528 ,  H01L27/0207 ,  H01L27/0886 ,  H01L29/6681

Abstract: Methods of generating an integrated circuit layout include forming a standard cell by providing a first active area adjacent to a first cell boundary line. The first active area is spaced apart from the first cell boundary line by a first distance. A second active area is provided adjacent to a second cell boundary line. The second cell boundary line opposes the first cell boundary line. The second active area is spaced apart from the second cell boundary line by a second distance. Fins are formed on the first and second active areas. The fins extend in a first direction and parallel to one another in a second direction substantially perpendicular to the first direction. The first cell boundary line is parallel to the fins. The first distance and the second distance remain constant when a number of the fins on the first and second active areas is changed.

Abstract translation: 生成集成电路布局的方法包括通过提供与第一单元边界线相邻的第一有源区来形成标准单元。 第一有效区域与第一细胞边界线隔开第一距离。 第二活动区域被设置成与第二单元边界线相邻。 第二细胞边界线与第一细胞边界线相反。 第二有效区域与第二细胞边界线间隔第二距离。 翅片形成在第一和第二活动区域上。 翅片在第一方向上延伸并且在基本上垂直于第一方向的第二方向上彼此平行。 第一个细胞边界线平行于翅片。 当第一和第二有效区域上的多个翅片改变时，第一距离和第二距离保持恒定。

公开(公告)号：US20160055283A1

公开(公告)日：2016-02-25

申请号：US14799750

申请日：2015-07-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANG-KYU OH ,  Sang-hoon Baek ,  Seung-young Lee ,  Tae-joong Song

IPC: G06F17/50

CPC classification number: G06F17/5072 ,  G06F17/5081 ,  G06F2217/82

Abstract: A method of designing a semiconductor integrated circuit (IC) is provided as follows. A standard cell library is generated. The standard cell library includes characteristic information for a plurality of standard cells. The characteristic information includes a characteristic of each standard cell. A characteristic change region is detected. The characteristic change region includes at least one of the plurality of standard cells by comparing characteristics of standard cells to be placed adjacent to the characteristic change region, based on the standard cell library. A characteristic of the at least one standard cell included in the detected characteristic change region is changed to one of the characteristics of the standard cells to be placed adjacent to the characteristic change region to update the standard cell library. A plurality of standard cells of the updated standard cell library is placed.

Abstract translation: 如下设置半导体集成电路（IC）的设计方法。 生成标准单元库。 标准单元库包括多个标准单元的特征信息。 特征信息包括每个标准单元的特征。 检测到特征变化区域。 基于标准单元库，特征变化区域通过比较与特征变化区域相邻放置的标准单元的特性来包括多个标准单元中的至少一个。 包括在检测到的特征变化区域中的至少一个标准单元的特征被改变为与特征变化区域相邻放置的标准单元的特性之一，以更新标准单元库。 放置更新的标准单元库的多个标准单元。