公开(公告)号：US11824045B2

公开(公告)日：2023-11-21

申请号：US17469954

申请日：2021-09-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghwan Kim ,  Sangcheon Park

IPC: H01L25/065 ,  H01L23/00 ,  H01L29/06

CPC classification number: H01L25/0657 ,  H01L24/08 ,  H01L29/0684 ,  H01L2224/08146

Abstract: A semiconductor package includes a first, second, third and fourth semiconductor chips sequentially stacked on one another. The second semiconductor chip includes a second substrate and a second substrate recess formed in an edge of a backside surface of the second substrate. The third semiconductor chip includes a third substrate and a first metal residual material provided in a peripheral region of a front surface of the third substrate. When the second semiconductor chip and the third semiconductor chip are bonded to each other such that the front surface of the third substrate and the backside surface of the second substrate face each other, the first metal residual material is located in the second substrate recess. A first bonding pad on the backside surface of the second substrate and a second bonding pad on the front surface of the third substrate are bonded to each other.

公开(公告)号：US20230163088A1

公开(公告)日：2023-05-25

申请号：US18151622

申请日：2023-01-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyuekjae Lee ,  Jongho Lee ,  Jihoon Kim ,  Taehun Kim ,  Sangcheon Park ,  Jinkyeong Seol ,  Sanghoon Lee

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/18 ,  H01L21/56 ,  H01L25/00

CPC classification number: H01L24/06 ,  H01L25/0652 ,  H01L25/18 ,  H01L24/08 ,  H01L24/32 ,  H01L24/05 ,  H01L24/13 ,  H01L25/0655 ,  H01L21/561 ,  H01L25/50 ,  H01L24/94 ,  H01L24/96 ,  H01L24/92 ,  H01L25/0657 ,  H01L2224/83099 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2224/32145 ,  H01L2224/08148 ,  H01L2224/08145 ,  H01L2224/05073 ,  H01L2224/05025 ,  H01L2224/05564 ,  H01L2224/05562 ,  H01L2224/08121 ,  H01L2224/06182 ,  H01L2224/13024 ,  H01L2224/08225 ,  H01L2224/32225 ,  H01L2224/92142 ,  H01L2224/8389 ,  H01L2224/80895

Abstract: A semiconductor package includes a first connection structure, a first semiconductor chip on an upper surface of the first connection structure, a first molding layer on the upper surface of the first connection structure and surrounding the first semiconductor chip, a first bond pad on the first semiconductor chip, a first bond insulation layer on the first semiconductor chip and the first molding layer and surrounding the first bond pad, a second bond pad directly contacting the first bond pad, a second bond insulation layer surrounding the second bond pad; and a second semiconductor chip on the second bond pad and the second bond insulation layer.

公开(公告)号：US11658141B2

公开(公告)日：2023-05-23

申请号：US17680477

申请日：2022-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiseok Hong ,  Unbyoung Kang ,  Myungsung Kang ,  Taehun Kim ,  Sangcheon Park ,  Hyuekjae Lee ,  Jihwan Hwang

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00 ,  H01L21/66 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L24/08 ,  H01L22/22 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/50 ,  H01L23/481 ,  H01L2224/05124 ,  H01L2224/05564 ,  H01L2224/05647 ,  H01L2224/06051 ,  H01L2224/08145 ,  H01L2224/2919 ,  H01L2224/29028 ,  H01L2224/32145 ,  H01L2224/9211

Abstract: According to an aspect of the inventive concept, there is provided a die-to-wafer bonding structure including a die having a first test pad, a first bonding pad formed on the first test pad, and a first insulating layer, the first bonding pad penetrates the first insulating layer. The structure may further include a wafer having a second test pad, a second bonding pad formed on the second test pad, and a second insulating layer, the second bonding pad penetrates the second insulating layer. The structure may further include a polymer layer surrounding all side surfaces of the first bonding pad and all side surfaces of the second bonding pad, the polymer layer being arranged between the die and the wafer. Additionally, the wafer and the die may be bonded together.

公开(公告)号：US20220181285A1

公开(公告)日：2022-06-09

申请号：US17680477

申请日：2022-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiseok Hong ,  Unbyoung Kang ,  Myungsung Kang ,  Taehun Kim ,  Sangcheon Park ,  Hyuekjae Lee ,  Jihwan Hwang

IPC: H01L23/00 ,  H01L21/66 ,  H01L25/065 ,  H01L25/00

Abstract: According to an aspect of the inventive concept, there is provided a die-to-wafer bonding structure including a die having a first test pad, a first bonding pad formed on the first test pad, and a first insulating layer, the first bonding pad penetrates the first insulating layer. The structure may further include a wafer having a second test pad, a second bonding pad formed on the second test pad, and a second insulating layer, the second bonding pad penetrates the second insulating layer. The structure may further include a polymer layer surrounding all side surfaces of the first bonding pad and all side surfaces of the second bonding pad, the polymer layer being arranged between the die and the wafer. Additionally, the wafer and the die may be bonded together.

公开(公告)号：US20210358875A1

公开(公告)日：2021-11-18

申请号：US17155657

申请日：2021-01-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyuekjae Lee ,  Jongho Lee ,  Jihoon Kim ,  Taehun Kim ,  Sangcheon Park ,  Jinkyeong Seol ,  Sanghoon Lee

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/18 ,  H01L21/56 ,  H01L25/00

Abstract: A semiconductor package includes a first connection structure, a first semiconductor chip on an upper surface of the first connection structure, a first molding layer on the upper surface of the first connection structure and surrounding the first semiconductor chip, a first bond pad on the first semiconductor chip, a first bond insulation layer on the first semiconductor chip and the first molding layer and surrounding the first bond pad, a second bond pad directly contacting the first bond pad, a second bond insulation layer surrounding the second bond pad; and a second semiconductor chip on the second bond pad and the second bond insulation layer.

公开(公告)号：US20210104482A1

公开(公告)日：2021-04-08

申请号：US16985445

申请日：2020-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiseok Hong ,  Unbyoung Kang ,  Myungsung Kang ,  Taehun Kim ,  Sangcheon Park ,  Hyuekjae Lee ,  Jihwan Hwang

IPC: H01L23/00 ,  H01L21/66 ,  H01L25/00 ,  H01L25/065

Abstract: According to an aspect of the inventive concept, there is provided a die-to-wafer bonding structure including a die having a first test pad, a first bonding pad formed on the first test pad, and a first insulating layer, the first bonding pad penetrates the first insulating layer. The structure may further include a wafer having a second test pad, a second bonding pad formed on the second test pad, and a second insulating layer, the second bonding pad penetrates the second insulating layer. The structure may further include a polymer layer surrounding all side surfaces of the first bonding pad and all side surfaces of the second bonding pad, the polymer layer being arranged between the die and the wafer. Additionally, the wafer and the die may be bonded together.