公开(公告)号：US09105556B2

公开(公告)日：2015-08-11

申请号：US13906657

申请日：2013-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-seong Heo ,  Seong-jun Park ,  Kyung-eun Byun ,  David Seo ,  Hyun-jae Song ,  Jae-ho Lee ,  Hyun-jong Chung

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/336 ,  H01L29/16 ,  H01L29/786 ,  H01L29/08 ,  H01L29/78 ,  H01L29/739 ,  B82Y99/00

CPC classification number: H01L29/16 ,  B82Y99/00 ,  H01L29/0895 ,  H01L29/1606 ,  H01L29/7391 ,  H01L29/78 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78696

Abstract: According to example embodiments, a tunneling field-effect transistor (TFET) includes a first electrode on a substrate, a semiconductor layer on a portion of the first electrode, a graphene channel on the semiconductor layer, a second electrode on the graphene channel, a gate insulating layer on the graphene channel, and a gate electrode on the gate insulating layer. The first electrode may include a portion that is adjacent to the first area of the substrate. The semiconductor layer may be between the graphene channel and the portion of the first electrode. The graphene channel may extend beyond an edge of at least one of the semiconductor layer and the portion of the first electrode to over the first area of the substrate.

Abstract translation: 根据示例性实施例，隧道场效应晶体管（TFET）包括衬底上的第一电极，第一电极的一部分上的半导体层，半导体层上的石墨烯通道，石墨烯通道上的第二电极， 栅极绝缘层，栅极绝缘层上的栅电极。 第一电极可以包括与衬底的第一区域相邻的部分。 半导体层可以在石墨烯通道和第一电极的部分之间。 石墨烯通道可以延伸超过半导体层和第一电极的至少一个的边缘到衬底的第一区域之上。

公开(公告)号：US09048310B2

公开(公告)日：2015-06-02

申请号：US13964353

申请日：2013-08-12

Applicant: Samsung Electronics Co., Ltd. ,  Seoul National University R & DB Foundation

Inventor： Jae-ho Lee ,  Seong-jun Park ,  Kyung-eun Byun ,  David Seo ,  Hyun-jae Song ,  Hyung-cheol Shin ,  Jae-hong Lee ,  Hyun-jong Chung ,  Jin-seong Heo

IPC: H01L29/02 ,  H01L29/78

CPC classification number: H01L29/78 ,  H01L29/1606 ,  H01L29/407 ,  H01L29/66977 ,  H01L29/772 ,  H01L29/872 ,  H01L29/88

Abstract: According to example embodiments, a graphene switching devices having a tunable barrier includes a semiconductor substrate that includes a first well doped with an impurity, a first electrode on a first area of the semiconductor substrate, an insulation layer on a second area of the semiconductor substrate, a graphene layer on the insulation layer and extending onto the semiconductor substrate toward the first electrode, a second electrode on the graphene layer and insulation layer, a gate insulation layer on the graphene layer, and a gate electrode on the gate insulation layer. The first area and the second area of the semiconductor substrate may be spaced apart from each other. The graphene layer is spaced apart from the first electrode. A lower portion of the graphene layer may contact the first well. The first well is configured to form an energy barrier between the graphene layer and the first electrode.

Abstract translation: 根据示例实施例，具有可调谐屏障的石墨烯开关器件包括半导体衬底，其包括掺杂有杂质的第一阱，在半导体衬底的第一区域上的第一电极，在半导体衬底的第二区域上的绝缘层 在所述绝缘层上的石墨烯层，并且朝向所述第一电极延伸到所述半导体衬底上，所述石墨烯层和绝缘层上的第二电极，所述石墨烯层上的栅极绝缘层和所述栅极绝缘层上的栅极电极。 半导体衬底的第一区域和第二区域可以彼此间隔开。 石墨烯层与第一电极间隔开。 石墨烯层的下部可以接触第一孔。 第一阱被配置为在石墨烯层和第一电极之间形成能量势垒。

公开(公告)号：US09373685B2

公开(公告)日：2016-06-21

申请号：US14180928

申请日：2014-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeon-jin Shin ,  Kyung-eun Byun ,  Hyun-jae Song ,  Seong-jun Park ,  David Seo ,  Yun-sung Woo ,  Dong-wook Lee ,  Jae-ho Lee ,  Hyun-jong Chung ,  Jin-seong Heo ,  In-kyeong Yoo

IPC: H01L29/78 ,  H01L29/16 ,  H01L51/00 ,  H01L51/42 ,  H01L51/50 ,  H01L51/05 ,  H01L29/786 ,  H01L31/028 ,  H01L33/34 ,  H01L31/08

CPC classification number: H01L29/1606 ,  H01L29/786 ,  H01L29/78642 ,  H01L29/78684 ,  H01L31/028 ,  H01L31/08 ,  H01L33/34 ,  H01L51/0046 ,  H01L51/0504 ,  H01L51/0558 ,  H01L51/0562 ,  H01L51/0566 ,  H01L51/057 ,  H01L51/428 ,  H01L51/50

Abstract: A graphene device and an electronic apparatus including the same are provided. According to example embodiments, the graphene device includes a transistor including a source, a gate, and a drain, an active layer through which carriers move, and a graphene layer between the gate and the active layer. The graphene layer may be configured to function both as an electrode of the active layer and a channel layer of the transistor.

Abstract translation: 提供了石墨烯装置和包括该石墨烯装置的电子装置。 根据示例性实施例，石墨烯装置包括晶体管，其包括源极，栅极和漏极，载流子移动的有源层以及栅极和有源层之间的石墨烯层。 石墨烯层可以被配置为既用作有源层的电极和晶体管的沟道层。

公开(公告)号：US09349802B2

公开(公告)日：2016-05-24

申请号：US14265965

申请日：2014-04-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-seong Heo ,  Seong-jun Park ,  Hyeon-jin Shin ,  Jae-ho Lee

IPC: H01L27/108 ,  H01L21/336 ,  H01L29/16 ,  H01L29/66 ,  H01L45/00 ,  G11C13/00 ,  G11C13/02

CPC classification number: H01L29/1606 ,  G11C13/0014 ,  G11C13/025 ,  G11C2213/35 ,  H01L27/10808 ,  H01L27/10873 ,  H01L29/66015 ,  H01L29/7606 ,  H01L45/149

Abstract: Disclosed are memory devices including a two-dimensional (2D) material, methods of manufacturing the same, and methods of operating the same. A memory device may include a transistor, which includes graphene and 2D semiconductor contacting the graphene, and a capacitor connected to the transistor. The memory device may include a first electrode, a first insulation layer, a second electrode, a semiconductor layer, a third electrode, a second insulation layer, and a fourth electrode which are sequentially arranged. The second electrode may include the graphene, and the semiconductor layer may include the 2D semiconductor. Alternatively, the memory device may include first and second electrode elements, a graphene layer between the first and second electrode elements, a 2D semiconductor layer between the graphene layer and the first electrode element, and a dielectric layer between the graphene layer and the second electrode.

Abstract translation: 公开了包括二维（2D）材料，其制造方法及其操作方法的存储器件。 存储器件可以包括晶体管，其包括与石墨烯接触的石墨烯和2D半导体以及连接到晶体管的电容器。 存储器件可以包括依次布置的第一电极，第一绝缘层，第二电极，半导体层，第三电极，第二绝缘层和第四电极。 第二电极可以包括石墨烯，并且半导体层可以包括2D半导体。 或者，存储器件可以包括第一和第二电极元件，在第一和第二电极元件之间的石墨烯层，在石墨烯层和第一电极元件之间的2D半导体层，以及在石墨烯层和第二电极之间的电介质层 。

公开(公告)号：US09306021B2

公开(公告)日：2016-04-05

申请号：US14244223

申请日：2014-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-jong Chung ,  David Seo ,  Seong-jun Park ,  Kyung-eun Byun ,  Hyun-jae Song ,  Hee-jun Yang ,  Jin-seong Heo

IPC: H01L29/02 ,  H01L29/47 ,  H01L21/74 ,  H01L29/778 ,  H01L29/78 ,  H01L29/16 ,  H01L29/165 ,  H01L29/41 ,  B82Y10/00 ,  H01L29/417 ,  H01L29/66 ,  H01L29/08

CPC classification number: H01L29/47 ,  B82Y10/00 ,  H01L21/74 ,  H01L29/0847 ,  H01L29/0895 ,  H01L29/1606 ,  H01L29/165 ,  H01L29/413 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/66477 ,  H01L29/66977 ,  H01L29/7781 ,  H01L29/7839

Abstract: A graphene device includes: a semiconductor substrate having a first region and a second region; a graphene layer on the first region, but not on the second region of the semiconductor substrate; a first electrode on a first portion of the graphene layer; a second electrode on a second portion of the graphene layer; an insulating layer between the graphene layer and the second electrode; and a third electrode on the second region of the semiconductor substrate. The semiconductor substrate has a tunable Schottky barrier formed by junction of the graphene layer and the semiconductor substrate.

Abstract translation: 石墨烯装置包括：具有第一区域和第二区域的半导体衬底; 在第一区域上但不在半导体衬底的第二区域上的石墨烯层; 在所述石墨烯层的第一部分上的第一电极; 在所述石墨烯层的第二部分上的第二电极; 石墨烯层和第二电极之间的绝缘层; 以及在所述半导体衬底的第二区域上的第三电极。 半导体衬底具有由石墨烯层和半导体衬底的结合形成的可调肖特基势垒。

公开(公告)号：US09299789B2

公开(公告)日：2016-03-29

申请号：US13943006

申请日：2013-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： David Seo ,  Ho-jung Kim ,  Hyun-jong Chung ,  Seong-jun Park ,  Kyung-eun Byun ,  Hyun-jae Song ,  Jin-seong Heo

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/772 ,  H01L29/872 ,  H01L29/88 ,  H01L29/40

CPC classification number: H01L29/1606 ,  H01L29/407 ,  H01L29/66977 ,  H01L29/772 ,  H01L29/872 ,  H01L29/88

Abstract: A memory device includes a graphene switching device having a source electrode, a drain electrode and a gate electrode. The graphene switching device includes a Schottky barrier formed between the drain electrode and a channel in a direction from the source electrode toward the drain electrode. The memory device need not include additional storage element.

Abstract translation: 存储器件包括具有源电极，漏电极和栅电极的石墨烯开关器件。 石墨烯开关器件包括形成在漏电极和沟道之间的从源电极朝向漏电极的方向上的肖特基势垒。 存储器件不需要包括额外的存储元件。

公开(公告)号：US09166062B2

公开(公告)日：2015-10-20

申请号：US14693680

申请日：2015-04-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-ho Lee ,  Seong-jun Park ,  Kyung-eun Byun ,  David Seo ,  Hyun-jae Song ,  Hyung-cheol Shin ,  Jae-hong Lee ,  Hyun-jong Chung ,  Jin-seong Heo

IPC: H01L21/36 ,  H01L29/786 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/78696 ,  B82Y10/00 ,  H01L29/1095 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/78684 ,  Y10S977/734 ,  Y10S977/842 ,  Y10S977/938

Abstract: According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode.

公开(公告)号：US08742400B2

公开(公告)日：2014-06-03

申请号：US13861726

申请日：2013-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： David Seo ,  Sang-wook Kim ,  Seong-jun Park ,  Young-jun Yun ,  Yung-hee Yvette Lee ,  Chang-seung Lee

IPC: H01L29/06

CPC classification number: H01L29/775 ,  H01L29/1079 ,  H01L29/1606 ,  H01L29/42376 ,  H01L29/7781 ,  H01L29/7789

Abstract: A graphene switching device includes a first electrode and an insulating layer in first and second regions of the semiconductor substrate, respectively, a plurality of metal particles on a surface of the semiconductor substrate between the first and second regions, a graphene layer on the plurality of metal particles and extending on the insulating layer, a second electrode on the graphene layer in the second region and configured to face the insulating layer, a gate insulating layer configured to cover the graphene layer, and a gate electrode on the gate insulating layer. The semiconductor substrate forms an energy barrier between the graphene layer and the first electrode.

Abstract translation: 石墨烯开关装置在半导体衬底的第一和第二区域中分别包括第一电极和绝缘层，在第一和第二区域之间的半导体衬底的表面上的多个金属颗粒，多个 金属颗粒并在绝缘层上延伸，在第二区域中的石墨烯层上的第二电极，并且被配置为面对绝缘层，构造成覆盖石墨烯层的栅极绝缘层和栅极绝缘层上的栅电极。 半导体衬底在石墨烯层和第一电极之间形成能量势垒。