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    Electromagnetic sensor and mobile device including the same
    11.
    发明授权
    Electromagnetic sensor and mobile device including the same 有权

    公开(公告)号：US11131787B2

    公开(公告)日：2021-09-28

    申请号：US16352366

    申请日：2019-03-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seung Jae Lee ,  Soo Yong Kim ,  Sun Joo Hong

    IPC: G01V3/00 ,  G01V3/12 ,  G06F3/00 ,  G01V3/38 ,  G01V3/08 ,  G01V3/28 ,  G01V3/16 ,  G01V11/00

    Abstract: An electromagnetic (EM) sensor includes a front end module generating an EM signal using electromagnetic waves transmitted from an external source, a sensor memory storing a portion of a plurality of machine learning models used to recognize the EM signal, and a microcontroller unit for recognizing the external electronic device emitting the electromagnetic waves by inputting feature values extracted from the EM signal to the machine learning models. If the machine learning models stored in the sensor memory are not able to recognize the external device, the feature values may be transmitted to a main processor, and the main processor may compare the feature values to another set of machine learning models.

    EM sensor and mobile device including the same
    12.
    发明授权
    EM sensor and mobile device including the same 有权

    公开(公告)号：US10909467B2

    公开(公告)日：2021-02-02

    申请号：US16243854

    申请日：2019-01-09

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seung Jae Lee ,  Myoung Oh Ki ,  Long Yan

    IPC: G06N7/00 ,  G01R29/08 ,  G06F1/26

    Abstract: An electromagnetic (EM) sensor includes a front-end module, a memory, and a microcontroller unit. The front-end module generates an electromagnetic signal using externally introduced electromagnetic waves. The memory stores a first reference signal and a second reference signal generated from multiple probability models required to recognize the electromagnetic signal. The microcontroller unit compares the electromagnetic signal with the first reference signal and the second reference signal, to determine whether the electromagnetic signal is a valid signal.

    Semiconductor devices
    15.
    发明授权
    Semiconductor devices 有权

    公开(公告)号：US11721622B2

    公开(公告)日：2023-08-08

    申请号：US17453197

    申请日：2021-11-02

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Junghoo Shin ,  Sanghoon Ahn ,  Seung Jae Lee ,  Deokyoung Jung ,  Woojin Lee

    IPC: H01L23/522 ,  H01L23/532 ,  H01L23/528

    CPC classification number: H01L23/5226 ,  H01L23/528 ,  H01L23/53204

    Abstract: A semiconductor device includes a second insulating layer disposed on a substrate and that includes a first trench that extends in a first direction, a first via disposed in the first hole, a first interconnection layer disposed in the first trench on the first via and that has an upwardly upper region, and a third insulating layer disposed on the second insulating layer and that includes a second hole and a second trench connected to the second hole. The first trench has inclined side surfaces such that a width of the first trench increases in a direction toward the substrate, the second hole has inclined side surfaces such that a width of the second hole decreases in the direction toward the substrate, and a lower portion of the second hole is wider than an upper surface of the first interconnection layer.

    Semiconductor devices having upper and lower active contacts
    20.
    发明授权
    Semiconductor devices having upper and lower active contacts 有权

    公开(公告)号：US12279449B2

    公开(公告)日：2025-04-15

    申请号：US17526046

    申请日：2021-11-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung Hwan Chun ,  Seung Jae Lee ,  Jong Min Baek ,  Kyung Seok Oh ,  Woo Jin Lee

    IPC: H10D30/67 ,  H10D30/62 ,  H10D62/10 ,  H10D62/13 ,  H10D64/01

    Abstract: Semiconductor devices having improved performance and reliability. For example, a semiconductor device may include a substrate, an active pattern extending in a first direction, on the substrate, a plurality of gate structures on the active pattern, each including a gate electrode that crosses the active pattern. A lower active contact may be connected to a source/drain pattern. A trench may expose the lower active contact, and a width of a bottom surface of the trench in the first direction may be greater than a width of an upper surface of the lower active contact in the first direction. An etching stop film may be along the bottom surface of the trench and side walls of the trench, and have an uppermost surface coplanar with an upper surface of an upper active contact that extends through the etching stop film and is connected to the lower active contact.

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