METHOD AND APPARATUS FOR TRANSMITTING CSI-RS AND DATA USING PARTIAL MUTING OF CSI-RS
    11.
    发明申请
    METHOD AND APPARATUS FOR TRANSMITTING CSI-RS AND DATA USING PARTIAL MUTING OF CSI-RS 审中-公开
    用CSI-RS发送CSI-RS和数据的方法和装置

    公开(公告)号:US20140185527A1

    公开(公告)日:2014-07-03

    申请号:US14196606

    申请日:2014-03-04

    Abstract: A method and apparatus for transmitting Channel State Information Reference Symbol (CSI-RS) and data with partial muting of the CSI-RS are proposed. The method includes determining a CSI-RS pattern to be used among CSI-RS pattern candidates, determining a muting pattern for muting some resource elements constituting CSI-RS pattern candidates except for the determined CSI-RS pattern, mapping data symbols and CSI-RS to resource elements in a resource grid with rate patching in consideration of the CSI-RS pattern and muting pattern, and transmitting the data symbols and CSI-RS to a terminal.

    Abstract translation: 提出了一种用于发送信道状态信息参考符号(CSI-RS)的方法和装置以及具有CSI-RS的部分静噪的数据。 该方法包括确定在CSI-RS模式候选中要使用的CSI-RS模式,确定用于使构成除了确定的CSI-RS模式之外的CSI-RS模式候选的一些资源元素静噪的静噪模式,映射数据符号和CSI-RS 考虑到CSI-RS模式和静噪模式,利用速率修补的资源网格中的资源元素,并将数据符号和CSI-RS发送到终端。

    METHOD OF MANUFACTURING LIGHT EMITTING DEVICE
    12.
    发明申请
    METHOD OF MANUFACTURING LIGHT EMITTING DEVICE 有权
    制造发光装置的方法

    公开(公告)号:US20130244353A1

    公开(公告)日:2013-09-19

    申请号:US13844569

    申请日:2013-03-15

    CPC classification number: H01L33/005 H01L33/26

    Abstract: Provided a method of manufacturing a semiconductor light emitting device, the method includes forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate. The forming of the light emitting structure includes: forming a protective layer after a portion of the light emitting structure is formed forming a sacrificial layer on the protective layer; and continuously forming a further portion of the light emitting structure on the sacrificial layer.

    Abstract translation: 提供一种制造半导体发光器件的方法,该方法包括通过在衬底上生长第一导电类型半导体层,有源层和第二导电类型半导体层来形成发光结构。 发光结构的形成包括:在形成发光结构的一部分之后形成保护层,在保护层上形成牺牲层; 并且在牺牲层上连续地形成发光结构的另一部分。

    LENS AND DISPLAY APPARATUS HAVING THE SAME
    13.
    发明申请

    公开(公告)号:US20190035327A1

    公开(公告)日:2019-01-31

    申请号:US16072397

    申请日:2017-01-20

    Abstract: Provided herein is a display apparatus including a light emitting diode and a lens for diffusing light generated from the light emitting diode. The lens includes a first emitting portion forming a first emitting surface, and a second emitting portion protruding from the first emitting portion and forming a second emitting surface, so that the light may be diffused by a protruding distance of the second emitting portion.

    METHOD AND APPARATUS FOR TRANSMITTING AND RECEIVING REFERENCE SIGNAL IN WIRELESS COMMUNICATION SYSTEM
    15.
    发明申请
    METHOD AND APPARATUS FOR TRANSMITTING AND RECEIVING REFERENCE SIGNAL IN WIRELESS COMMUNICATION SYSTEM 有权
    用于在无线通信系统中发送和接收参考信号的方法和装置

    公开(公告)号:US20150124753A1

    公开(公告)日:2015-05-07

    申请号:US14589638

    申请日:2015-01-05

    CPC classification number: H04L5/0048 H04W28/00 H04W48/12 H04W52/54

    Abstract: Methods and apparatus are provided for transmitting a reference signal by a base station in a mobile communication system. The method includes generating, at the base station, information for a non zero transmission power reference signal including at least one resource element; generating, at the base station, bitmap information indicating a zero transmission power reference signal; and transmitting, at the base station, the information for the non zero transmission power reference signal and the bitmap information to a terminal.

    Abstract translation: 提供了用于在移动通信系统中由基站发送参考信号的方法和装置。 该方法包括在基站处生成包括至少一个资源元素的非零发射功率参考信号的信息; 在基站处产生指示零发送功率参考信号的位图信息; 以及在所述基站处向所述终端发送所述非零发送功率参考信号和所述位图信息的信息。

    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
    18.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    氮化物半导体发光器件

    公开(公告)号:US20130099248A1

    公开(公告)日:2013-04-25

    申请号:US13655250

    申请日:2012-10-18

    CPC classification number: H01L33/14 H01L33/32

    Abstract: There is provided a nitride semiconductor light emitting device including an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer disposed on the active layer. One or more current diffusion layers are disposed on a surface of the n-type nitride semiconductor layer. The current diffusion layer(s) includes a material having greater band gap energy than that of a material forming the n-type nitride semiconductor layer so as to form a two-dimensional electron gas layer at an interface with the material forming the n-type nitride semiconductor layer.

    Abstract translation: 提供了包括n型氮化物半导体层,设置在n型氮化物半导体层上的有源层和设置在有源层上的p型氮化物半导体层的氮化物半导体发光器件。 一个或多个电流扩散层设置在n型氮化物半导体层的表面上。 电流扩散层包括具有比形成n型氮化物半导体层的材料更大的带隙能量的材料,以便在与形成n型氮化物半导体层的材料的界面处形成二维电子气层 氮化物半导体层。

    PANEL DEVICE AND DISPLAY DEVICE
    20.
    发明申请

    公开(公告)号:US20180120577A1

    公开(公告)日:2018-05-03

    申请号:US15798747

    申请日:2017-10-31

    Abstract: A panel device includes a display panel including a plurality of pixels, each of the plurality of pixels including a light source area and a non-light source area, and a polarizing film including a left eye pattern and a right eye pattern alternately arranged line-by-line in a diagonal direction of the plurality of pixels, the polarizing film is disposed on the display panel such that a border between the left eye pattern and the right eye pattern is disposed over the non-light source area and not over the light source area.

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