公开(公告)号：US20210257560A1

公开(公告)日：2021-08-19

申请号：US16993615

申请日：2020-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seokhwan HONG ,  Myungsun SIM ,  Seungyeon KWAK ,  Hyun KOO ,  Sangdong KIM ,  Chul BAIK ,  Sukekazu ARATANI ,  Sunyoung LEE ,  Sunghun LEE ,  Shingo ISHIHARA ,  Jeoungin YI ,  Yuri CHO ,  Yasushi KOISHIKAWA

IPC: H01L51/00 ,  H01L51/50

Abstract: An organic light-emitting device comprising: a first electrode; a second electrode facing the first electrode; and an organic layer disposed between the first electrode and the second electrode, wherein the organic layer comprises an emission layer, the emission layer comprises a first host and a dopant, the dopant is an organometallic compound including platinum, the organic light-emitting device satisfies a condition of: HOMO(D)−HOMO(Host 1)≥0.2 electron volts, HOMO(D) is a highest occupied molecular orbital (HOMO) energy level of the dopant in electron volts, HOMO(Host 1) is a HOMO) energy level of the first host in electron volts, and HOMO(D) and HOMO(Host 1) are each measured using a photoelectron spectrometer in an ambient atmosphere.

公开(公告)号：US20190326527A1

公开(公告)日：2019-10-24

申请号：US16392090

申请日：2019-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Whail CHOI ,  Yoonhyun KWAK ,  Hyun KOO ,  Sungjun KIM ,  Sukekazu ARATANI ,  Kum Hee LEE ,  Sunyoung LEE ,  Kyuyoung HWANG

IPC: H01L51/00 ,  C07F15/00 ,  C09K11/06

Abstract: Provided are an organometallic compound represented by Formula 1, an organic light-emitting device including the organometallic compound, and a diagnostic composition including the organometallic compound: M(L1)n1(L2)n2  Formula 1 wherein M, L1, L2, n1 and n2 are each independently the same as defined in the specification.

公开(公告)号：US20250102906A1

公开(公告)日：2025-03-27

申请号：US18420038

申请日：2024-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwon JEON ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Mijeong KIM ,  Sunyoung LEE ,  Changheon LEE ,  Kyuhyun IM ,  Jungha CHAE ,  Minyoung HA

IPC: G03F7/004 ,  C07F7/22

Abstract: Provided are an organometallic compound represented by one of Formulae 1-1 to 1-4, a resist composition including the same, and a pattern formation method using the resist composition: M11, Q11 to Q14, b11 to b14, R11 to R14, Y11 to Y13, and X11 to X14 in Formulae 1-1 to 1-4 are as described in the specification.

公开(公告)号：US20250081559A1

公开(公告)日：2025-03-06

申请号：US18624201

申请日：2024-04-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunyoung LEE ,  Hyun-Kwan YU ,  Hyojin KIM

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

Abstract: A semiconductor device includes a substrate including an active pattern, a channel pattern including a first semiconductor pattern and a second semiconductor pattern, a source/drain pattern connected to the first and second semiconductor patterns, and a gate electrode including an electrode between the first and second semiconductor patterns, and an insulating layer between the first and second semiconductor patterns and the electrode. The insulating layer includes a dielectric layer enclosing the electrode and a spacer on the dielectric layer. The spacer includes a horizontal portion between the dielectric layer and the second semiconductor pattern, a vertical portion between the dielectric layer and the source/drain pattern, and a corner portion connecting the horizontal portion to the vertical portion. A first thickness of the horizontal portion is smaller than a second thickness of the vertical portion, and the second thickness is smaller than a third thickness of the corner portion.

公开(公告)号：US20240319592A1

公开(公告)日：2024-09-26

申请号：US18491310

申请日：2023-10-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changheon LEE ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Mijeong KIM ,  Sunyoung LEE ,  Kyuhyun IM ,  Jinwon JEON ,  Jungha CHAE ,  Sunghyun HAN

IPC: G03F7/004 ,  G03F7/038

CPC classification number: G03F7/0042 ,  G03F7/0048 ,  G03F7/0382

Abstract: Provided are a resist composition and a method of forming a pattern using the same, wherein the resist composition may include an organometallic compound represented by Formula 1 below, and a polymer including a repeating unit represented by Formula 2 below.




For a description of M11, R11, R12, n, A21, L21 to L23, A21 to a23, R21 to R22, b22, and p in Formula 1 and Formula 2, the specification is referred to.

公开(公告)号：US20240055428A1

公开(公告)日：2024-02-15

申请号：US18182563

申请日：2023-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Kwan YU ,  Sunyoung LEE ,  Hayoung JEON ,  Hwiseok JUN ,  Ji Hoon CHA

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L29/775 ,  H01L21/8238 ,  H01L29/66

CPC classification number: H01L27/092 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/42392 ,  H01L29/775 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/66439

Abstract: A semiconductor device comprises a substrate including NMOSFET and PMOSFET regions, first and second channel patterns on the NMOSFET and PMOSFET regions, respectively, and each including respective semiconductor patterns spaced apart from and vertically stacked on each other, first and second source/drain patterns on the NMOSFET and NMOSFET regions and connected to the first and second channel patterns, respectively, and a gate electrode on the first and second channel patterns. The gate electrode includes a first inner electrode between neighboring semiconductor patterns of the first channel pattern, and a second inner electrode between neighboring semiconductor patterns of the second channel pattern. A top surface of the first inner electrode is more convex than a top surface of the second inner electrode.

公开(公告)号：US20220122986A1

公开(公告)日：2022-04-21

申请号：US17398136

申请日：2021-08-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sukhwa JANG ,  Kanguk KIM ,  Hyunsuk NOH ,  Yeongshin PARK ,  Sangkyu SUN ,  Sunyoung LEE ,  Sohyang LEE ,  Hongjun LEE ,  Hosun JUNG ,  Jeongmin JIN ,  Jeonghee CHOI ,  Jinseo CHOI ,  Cera HONG

IPC: H01L27/108

Abstract: A method of manufacturing a semiconductor device includes forming a lower structure including a plurality of transistors, forming a conductive layer on the lower structure, forming first preliminary pad mask patterns and wiring mask patterns on the conductive layer, forming pad mask patterns by patterning the first preliminary pad mask patterns while protecting the wiring mask patterns, and etching the conductive layer using the pad mask patterns and the wiring mask patterns as an etching mask to form pad patterns and wiring patterns.

公开(公告)号：US20190036045A1

公开(公告)日：2019-01-31

申请号：US16043323

申请日：2018-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuyoung HWANG ,  Seungyeon KWAK ,  Soyeon KIM ,  Sunyoung LEE ,  Jungin LEE ,  Hyeonho CHOI ,  Whail CHOI ,  Yoonhyun KWAK ,  Byoungki CHOI

IPC: H01L51/00 ,  C07F15/00 ,  C09K11/06

Abstract: An organometallic compound represented by Formula 1: wherein, in Formula 1, groups and variables are the same as described in the specification.

公开(公告)号：US20170125418A1

公开(公告)日：2017-05-04

申请号：US15407598

申请日：2017-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： JAEYOUNG PARK ,  SUNGHO KANG ,  KICHUL KIM ,  Sunyoung LEE ,  HAN KI LEE ,  BONYOUNG KOO

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L21/306 ,  H01L21/3205 ,  H01L21/762 ,  H01L21/02 ,  H01L29/66 ,  H01L29/45 ,  H01L21/768 ,  H01L29/34 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L21/0206 ,  H01L21/302 ,  H01L21/306 ,  H01L21/32053 ,  H01L21/76224 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823475 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/34 ,  H01L29/45 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795

Abstract: A method of manufacturing a semiconductor device includes forming a first plurality of recessed regions in a substrate, the substrate having a protruded active region between the first plurality of recessed regions and the protruded active region having an upper surface and a sidewall, forming a device isolation film in the first plurality of recessed regions, the device isolation film exposing the upper surface and an upper portion of the sidewall of the protruded active region, and performing a first plasma treatment on the exposed surface of the protruded active region, wherein the plasma treatment is performed using a plasma gas containing at least one of an inert gas and a hydrogen gas in a temperature of less than or equal to about 700° C.

公开(公告)号：US20160301019A1

公开(公告)日：2016-10-13

申请号：US15093400

申请日：2016-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunyoung LEE ,  Yoonhyun KWAK ,  Bumwoo PARK

IPC: H01L51/00 ,  C09K11/02 ,  C07F15/00 ,  C09K11/06

CPC classification number: H01L51/0087 ,  C07F15/0093 ,  C09K11/025 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1029 ,  C09K2211/1044 ,  C09K2211/185 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/5016

Abstract: An organometallic compound represented by Formula 1: wherein, in Formula 1, M, A11 to A13, L11, R11 to R15, X11, Y11 to Y17, b13 to b15, and n11 are the same as described in the specification.