公开(公告)号：US20140312369A1

公开(公告)日：2014-10-23

申请号：US14146689

申请日：2014-01-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Heon YOON ,  Sang Yeon KIM ,  Seung Hwan LEE ,  Jin Hyun LEE ,  Wan Tae LIM ,  Hyun Kwon HONG

IPC: H01L33/36

CPC classification number: H01L33/382 ,  H01L33/20 ,  H01L33/22 ,  H01L33/40 ,  H01L33/44 ,  H01L2224/13 ,  H01L2933/0016

Abstract: A semiconductor light emitting device including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode connected to the first conductivity type semiconductor layer; a second electrode including a contact layer connected to the second conductivity type semiconductor layer, a capping layer disposed on the contact layer, and a metal buffer layer disposed on the capping layer, the metal buffer layer encompasses an upper and lateral surface of the capping layer; a first insulating layer disposed on the light emitting structure such that the first and second electrodes are exposed; and a second insulating layer disposed on the first insulating layer such that at least a portion of the first electrode and at least a portion of the metal buffer layer are exposed.

Abstract translation: 一种半导体发光器件，包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构; 连接到第一导电类型半导体层的第一电极; 第二电极，包括连接到第二导电类型半导体层的接触层，设置在接触层上的覆盖层和设置在覆盖层上的金属缓冲层，金属缓冲层包围覆盖层的上表面和侧表面 ; 设置在所述发光结构上以使得所述第一和第二电极露出的第一绝缘层; 以及设置在所述第一绝缘层上的第二绝缘层，使得所述第一电极的至少一部分和所述金属缓冲层的至少一部分露出。

公开(公告)号：US20190157515A1

公开(公告)日：2019-05-23

申请号：US16255466

申请日：2019-01-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Il KIM ,  Hyong Sik WON ,  Wan Tae LIM ,  Nam Goo CHA

IPC: H01L33/50 ,  H01L33/32 ,  H01L25/075 ,  H01L33/44 ,  H01L33/08

Abstract: A light emitting device package may include: a light emitting structure including a plurality of light emitting regions configured to emit light, respectively; a plurality of light adjusting layers formed above the light emitting regions to change characteristics of the light emitted from the light emitting regions, respectively; a plurality of electrodes configured to control the light emitting regions to emit the light, respectively; and an isolation insulating layer disposed between the light emitting regions to insulate the light emitting regions from one another, the isolation insulating layer forming a continuous structure with respect to the light emitting regions.

公开(公告)号：US20180269192A1

公开(公告)日：2018-09-20

申请号：US15971196

申请日：2018-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： YONG IL KIM ,  Wan Tae LIM ,  Young Jin CHOI ,  Sung Hyun SIM

IPC: H01L25/16 ,  H01L33/06 ,  H01L33/50 ,  H01L33/32 ,  H01L33/54 ,  H01L27/12

CPC classification number: H01L25/167 ,  H01L27/124 ,  H01L27/15 ,  H01L27/153 ,  H01L33/06 ,  H01L33/32 ,  H01L33/50 ,  H01L33/54

Abstract: A light emitting device package includes a cell array including a plurality of semiconductor light emitting units, and having a first surface and a second surface opposite the first surface, each of the plurality of semiconductor light emitting units having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked on each other. The light emitting device package may further include a plurality of wavelength conversion units disposed on the first surface of the cell array to correspond to the plurality of semiconductor light emitting units, respectively, each configured to convert a wavelength of light, emitted by a respective one of the plurality of semiconductor light emitting units, into a different wavelength of light, and a partition structure disposed in a space between the plurality of wavelength conversion units, and a plurality of switching units spaced apart from the plurality of wavelength conversion units within the partition structure, and electrically connected to the plurality of semiconductor light emitting units.

公开(公告)号：US20180211993A1

公开(公告)日：2018-07-26

申请号：US15933967

申请日：2018-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hye YEON ,  Sung Hyun SIM ,  Wan Tae LIM ,  Yong Il KIM ,  Hanul YOO

IPC: H01L27/15 ,  H01L33/50

Abstract: A light emitting device package includes a substrate for growth having a plurality of light-emitting windows, a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit having a first surface contacting the substrate for growth and a second surface opposite the first surface, and each semiconductor light-emitting unit having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other, a plurality of wavelength conversion units respectively disposed inside the plurality of light-emitting windows, each wavelength conversion unit is configured to provide light having a wavelength different from light emitted by the respective semiconductor light-emitting unit, a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth, and an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer.

公开(公告)号：US20180068991A1

公开(公告)日：2018-03-08

申请号：US15802493

申请日：2017-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： YONG IL KIM ,  Wan Tae LIM ,  Young Jin CHOI ,  Sung Hyun SIM

IPC: H01L25/16 ,  H01L27/12 ,  H01L33/32 ,  H01L33/06 ,  H01L33/54 ,  H01L33/50

CPC classification number: H01L25/167 ,  H01L27/124 ,  H01L33/06 ,  H01L33/32 ,  H01L33/50 ,  H01L33/54

Abstract: A light emitting device package includes a cell array including a plurality of semiconductor light emitting units, and having a first surface and a second surface opposite the first surface, each of the plurality of semiconductor light emitting units having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked on each other. The light emitting device package may further include a plurality of wavelength conversion units disposed on the first surface of the cell array to correspond to the plurality of semiconductor light emitting units, respectively, each configured to convert a wavelength of light, emitted by a respective one of the plurality of semiconductor light emitting units, into a different wavelength of light, and a partition structure disposed in a space between the plurality of wavelength conversion units, and a plurality of switching units spaced apart from the plurality of wavelength conversion units within the partition structure, and electrically connected to the plurality of semiconductor light emitting units.

公开(公告)号：US20180261738A1

公开(公告)日：2018-09-13

申请号：US15973977

申请日：2018-05-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo CHA ,  Wan Tae LIM ,  Yong II KIM ,  Hye Seok NOH ,  Eun Joo SHIN ,  Sung Hyun SIM ,  Hanul YOO

IPC: H01L33/58 ,  H01L33/50 ,  H01L33/44 ,  H01L33/00 ,  F21K9/275 ,  F21S8/02 ,  F21K9/237 ,  F21Y115/10 ,  F21Y103/10 ,  F21V23/00

CPC classification number: H01L33/58 ,  F21K9/237 ,  F21K9/275 ,  F21S8/026 ,  F21V23/005 ,  F21Y2103/10 ,  F21Y2115/10 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/505 ,  H01L2224/11

Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent support substrate.

公开(公告)号：US20170338210A1

公开(公告)日：2017-11-23

申请号：US15386425

申请日：2016-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： YONG IL KIM ,  Wan Tae LIM ,  Young Jin CHOI ,  Sung Hyun SIM

IPC: H01L25/16 ,  H01L33/32 ,  H01L27/12 ,  H01L33/06 ,  H01L33/54 ,  H01L33/50

CPC classification number: H01L25/167 ,  H01L27/124 ,  H01L33/06 ,  H01L33/32 ,  H01L33/50 ,  H01L33/54

Abstract: A light emitting device package includes a cell array including a plurality of semiconductor light emitting units, and having a first surface and a second surface opposite the first surface, each of the plurality of semiconductor light emitting units having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked on each other. The light emitting device package may further include a plurality of wavelength conversion units disposed on the first surface of the cell array to correspond to the plurality of semiconductor light emitting units, respectively, each configured to convert a wavelength of light, emitted by a respective one of the plurality of semiconductor light emitting units, into a different wavelength of light, and a partition structure disposed in a space between the plurality of wavelength conversion units, and a plurality of switching units spaced apart from the plurality of wavelength conversion units within the partition structure, and electrically connected to the plurality of semiconductor light emitting units.

公开(公告)号：US20160372636A1

公开(公告)日：2016-12-22

申请号：US15171087

申请日：2016-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Wook HWANG ,  Si Han KIM ,  Wan Tae LIM ,  Eun Joo SHIN

IPC: H01L33/46 ,  H01L33/32 ,  H01L33/58 ,  H01L33/42 ,  H01L33/50 ,  H01L33/56 ,  H01L33/06 ,  H01L33/22

CPC classification number: H01L33/46 ,  H01L33/22 ,  H01L33/507 ,  H01L33/508 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A semiconductor light-emitting device includes a light-emitting stack including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a wavelength conversion layer disposed on the light-emitting stack and configured to convert at least some of light having a first wavelength, emitted from the active layer, into light having a second wavelength, and a light control layer disposed between the light-emitting stack and the wavelength conversion layer, and including a first insulating layer and a second insulating layer, the first insulating layer having a refractive index lower than a refractive index of the light-emitting stack, and the second insulating layer having a refractive index higher than a refractive index of the first insulating layer by 0.5 or more.

Abstract translation: 一种半导体发光器件包括：发光层，包括第一导电型半导体层，第二导电型半导体层和设置在第一导电型半导体层和第二导电类型半导体层之间的有源层 设置在所述发光叠层上并被配置为将从所述有源层发射的具有第一波长的至少一些光转换为具有第二波长的光的波长转换层，以及设置在所述发光层之间的光控制层 并且包括第一绝缘层和第二绝缘层，所述第一绝缘层的折射率低于所述发光叠层的折射率，所述第二绝缘层的折射率高于 第一绝缘层的折射率为0.5以上。

公开(公告)号：US20160351764A1

公开(公告)日：2016-12-01

申请号：US15163204

申请日：2016-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo CHA ,  Wan Tae LIM ,  Yong Il KIM ,  Hye Seok NOH ,  Eun Joo SHIN ,  Sung Hyun SIM ,  Hanul YOO

IPC: H01L33/58 ,  H01L33/24 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/00 ,  H01L33/50 ,  H01L33/44

CPC classification number: H01L33/58 ,  F21K9/237 ,  F21K9/275 ,  F21S8/026 ,  F21V23/005 ,  F21Y2103/10 ,  F21Y2115/10 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/505 ,  H01L2224/11

Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent support substrate.

Abstract translation: 半导体发光器件包括：发光结构，包括分别提供发光结构的彼此相对的第一表面和第二表面的第一导电类型半导体层和第二导电类型半导体层，以及 有源层插入在第一导电型半导体层和第二导电类型半导体层之间，第一导电型半导体层的区域朝向第二表面开口，第一表面具有设置在其上的凹凸部分; 分别设置在第一导电型半导体层的区域和第二导电型半导体层的区域上的第一电极和第二电极; 设置在所述发光结构的第一表面上的透明支撑基板; 以及设置在发光结构的第一表面和透明支撑基板之间的透明粘合剂层。