公开(公告)号：US20170183565A1

公开(公告)日：2017-06-29

申请号：US15387107

申请日：2016-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shin Ae JUN ,  Taekhoon KIM ,  Garam PARK ,  Yong Seok HAN ,  Eun Joo JANG ,  Hyo Sook JANG ,  Tae Won JEONG ,  Shang Hyeun PARK

IPC: C09K11/02 ,  C08K3/30 ,  C08K3/32 ,  C09K11/88 ,  C09K11/70

Abstract: A quantum dot-polymer composite including a polymer matrix; and a plurality of quantum dots dispersed in the polymer matrix, wherein the quantum dot includes a core including a first semiconductor material; and a shell including a second semiconductor material disposed on the core, wherein the quantum dot is cadmium-free, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.

公开(公告)号：US20240247188A1

公开(公告)日：2024-07-25

申请号：US18415796

申请日：2024-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong Seok HAN ,  Ji Hyun MIN ,  Yuho WON ,  Jin A KIM ,  Hogeun CHANG ,  Hyundong HA

IPC: C09K11/88 ,  B82Y20/00 ,  B82Y40/00 ,  H10K50/115

CPC classification number: C09K11/883 ,  H10K50/115 ,  B82Y20/00 ,  B82Y40/00

Abstract: A semiconductor nanoparticle, a production method, and an electroluminescent devices including the same, wherein the semiconductor nanoparticles include a zinc chalcogenide including zinc, selenium, and sulfur, the semiconductor nanoparticles do not include cadmium, the semiconductor nanoparticles exhibit a peak emission wavelength in a range of greater than or equal to about 455 nanometers (nm) and less than or equal to about 480 nm, in a photoluminescence spectroscopy analysis, the semiconductor nanoparticles exhibit an absolute quantum yield of greater than or equal to about 80% and a full width at half maximum of less than or equal to about 50 nm, and an average particle size of the semiconductor nanoparticles is greater than or equal to about 12 nm and less than or equal to about 50 nm.

公开(公告)号：US20220399516A1

公开(公告)日：2022-12-15

申请号：US17892564

申请日：2022-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sujin PARK ,  Yuho WON ,  Eun Joo JANG ,  Dae Young CHUNG ,  Sung Woo KIM ,  Jin A KIM ,  Yong Seok HAN

IPC: H01L51/50 ,  H01L51/00

Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; a hole transport layer between the first electrode and the second electrode; a light emitting layer including a first light emitting layer disposed between the hole transport layer and the second electrode and including a first quantum dot and a second light emitting layer between the first light emitting layer and the second electrode and including a second quantum dot; and an electron transport layer between the light emitting layer and the second electrode. Each of the first and second light emitting layers emits first light, hole transport capability per unit area and electron transport capability per unit area of the first quantum dot are greater than hole transport capability per unit area and electron transport capability per unit area of the second quantum dot, respectively.

公开(公告)号：US20220209152A1

公开(公告)日：2022-06-30

申请号：US17563143

申请日：2021-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Seok HAN ,  Eun Joo JANG ,  Hyo Sook JANG ,  Oul CHO ,  Jihyun MIN ,  Yuho WON

IPC: H01L51/50 ,  C09K11/88 ,  C09K11/70

Abstract: A light-emitting device including a first electrically conducting layer, a second electrically conducting layer, and a light-emitting layer disposed between the first electrically conducting layer and the second electrically conducting layer, the light emitting layer including light emitting nanostructures, wherein the light emitting layer is configured to emit green light, the light-emitting layer do not include cadmium, lead, or a combination thereof, the light emitting nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide, the Group III-V compound includes indium, phosphorus, and optionally zinc, the zinc chalcogenide includes zinc, selenium, and sulfur, the light emitting nanostructures exhibit a zinc blende structure, and in a two dimensional image of the light emitting nanostructures obtained by an electron microscopy analysis, an average value of squareness of the light emitting nanostructures is greater than or equal to about 0.8.

公开(公告)号：US20210066543A1

公开(公告)日：2021-03-04

申请号：US16998262

申请日：2020-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Seok HAN ,  Sung Woo KIM ,  Jin A KIM ,  Tae Hyung KIM ,  Kun Su PARK ,  Yuho WON ,  Jeong Hee LEE ,  Eun Joo JANG ,  Hyo Sook JANG

IPC: H01L33/06 ,  H01L33/20 ,  H01L33/26 ,  C01B19/04 ,  C09K11/88

Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

公开(公告)号：US20190211260A1

公开(公告)日：2019-07-11

申请号：US16245544

申请日：2019-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho WON ,  Nayoun WON ,  Sungwoo HWANG ,  Eun Joo JANG ,  Soo Kyung KWON ,  Yong Wook KIM ,  Jihyun MIN ,  Garam PARK ,  Shang Hyeun PARK ,  Hyo Sook JANG ,  Shin Ae JUN ,  Yong Seok HAN

IPC: C09K11/08 ,  C08L57/10 ,  G02F1/1335 ,  H01L51/50 ,  H01L27/32

CPC classification number: C09K11/0883 ,  B82Y20/00 ,  B82Y40/00 ,  C08L57/10 ,  C08L2203/20 ,  C09K11/025 ,  C09K11/565 ,  C09K11/70 ,  C09K11/883 ,  G02F1/133617 ,  G02F2001/133614 ,  G02F2202/022 ,  G02F2202/102 ,  G02F2202/36 ,  H01L27/322 ,  H01L51/502 ,  H05B33/14

Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.

公开(公告)号：US20170115561A1

公开(公告)日：2017-04-27

申请号：US15295332

申请日：2016-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeyeon YANG ,  Tae Hyung KIM ,  Shang Hyeun PARK ,  Shin Ae JUN ,  Yong Seok HAN ,  Eun Joo JANG ,  Deukseok CHUNG

IPC: G03F7/00 ,  G03F7/20 ,  G03F7/004 ,  G03F7/40 ,  G03F7/033 ,  G03F7/031 ,  G03F7/16 ,  G03F7/32

CPC classification number: G03F7/0007 ,  G03F7/0045 ,  G03F7/0047 ,  G03F7/027 ,  G03F7/028 ,  G03F7/031 ,  G03F7/033 ,  G03F7/105 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/322 ,  G03F7/40

Abstract: A photosensitive composition and a quantum dot-polymer composite pattern formed from the photosensitive composition are disclosed, and the photosensitive composition includes: a plurality of quantum dots; a color filter material including an absorption dye, an absorption pigment, or a combination thereof; a polymer binder; a photopolymerizable monomer having a carbon-carbon double bond; a photoinitiator; and a solvent, wherein in a normalized photoluminescence spectrum of the quantum dot and a normalized ultraviolet-visible absorption spectrum of the color filter material, a photoluminescence peak wavelength (PL peak wavelength) of the quantum dot and a wavelength of maximum absorbance of the color filter material do not overlap with each other, and the color filter material is included in an amount of less than or equal to 1 part by weight per 10 parts by weight of the plurality of quantum dots.

公开(公告)号：US20210200082A1

公开(公告)日：2021-07-01

申请号：US17204110

申请日：2021-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung SDI Co., Ltd.

Inventor： Shin Ae JUN ,  Shang Hyeun PARK ,  Hojeong PARK ,  Jonggi KIM ,  Hyeyeon YANG ,  Eun Joo JANG ,  Yong Seok HAN

IPC: G03F7/00 ,  C09K11/02 ,  C09K11/08 ,  G03F7/033 ,  G02B5/22 ,  G02B5/20

Abstract: A photosensitive composition including a quantum dot dispersion, a photopolymerizable monomer having a carbon-carbon double bond, and a photoinitiator, wherein the quantum dot dispersion includes an acid group-containing polymer and a plurality of quantum dots dispersed in the acid group-containing polymer, and wherein the acid group-containing polymer includes a copolymer of a monomer combination including a first monomer having a carboxylic acid group or a phosphonic acid group and a carbon-carbon double bond and a second monomer having a carbon-carbon double bond and a hydrophobic group and not having a carboxylic acid group and a phosphonic acid group.

公开(公告)号：US20210062087A1

公开(公告)日：2021-03-04

申请号：US17007179

申请日：2020-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo KIM ,  Jin A KIM ,  Tae Hyung KIM ,  Kun Su PARK ,  Yuho WON ,  Jeong Hee LEE ,  Eun Joo JANG ,  Hyo Sook JANG ,  Yong Seok HAN ,  Heejae CHUNG

IPC: C09K11/88 ,  H01L33/18 ,  H01L51/50

Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.

公开(公告)号：US20190310549A1

公开(公告)日：2019-10-10

申请号：US16442984

申请日：2019-06-17

Applicant: Samsung Electronics Co., Ltd. ,  SAMSUNG DISPLAY CO., LTD. ,  SAMSUNG SDI CO., LTD.

Inventor： Hyeyeon YANG ,  Tae Hyung KIM ,  Shang Hyeun PARK ,  Shin Ae JUN ,  Yong Seok HAN ,  Eun Joo JANG ,  Deukseok CHUNG

IPC: G03F7/00 ,  G03F7/105 ,  G03F7/027 ,  G03F7/004 ,  G03F7/031 ,  G03F7/028 ,  G03F7/40 ,  G03F7/32 ,  G03F7/20 ,  G03F7/16 ,  G03F7/033

Abstract: A photosensitive composition and a quantum dot-polymer composite pattern formed from the photosensitive composition are disclosed, and the photosensitive composition includes: a plurality of quantum dots; a color filter material including an absorption dye, an absorption pigment, or a combination thereof; a polymer binder; a photopolymerizable monomer having a carbon-carbon double bond; a photoinitiator; and a solvent, wherein in a normalized photoluminescence spectrum of the quantum dot and a normalized ultraviolet-visible absorption spectrum of the color filter material, a photoluminescence peak wavelength (PL peak wavelength) of the quantum dot and a wavelength of maximum absorbance of the color filter material do not overlap with each other, and the color filter material is included in an amount of less than or equal to 1 part by weight per parts by weight of the plurality of quantum dots.