公开(公告)号：US20130134475A1

公开(公告)日：2013-05-30

申请号：US13684406

申请日：2012-11-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Heon HAN ,  Jae Sung HYUN ,  Jin Young LIM ,  Jeong Wook LEE ,  Young Sun KIM

IPC: H01L33/00

CPC classification number: H01L33/0025 ,  H01L33/04 ,  H01L33/14 ,  H01L33/32

Abstract: A semiconductor light emitting device is provided and includes an n-type semiconductor layer, a p-type semiconductor layer having a structure in which first and second doping regions including p-type impurities provided in different doping concentrations are alternately disposed one or more times; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein the p-type semiconductor layer includes at least one interface between the first and second doping regions to prevent diffusion of p-type impurities.

Abstract translation: 提供了一种半导体发光器件，其包括n型半导体层，具有这样的结构的p型半导体层，其中包括以不同掺杂浓度提供的p型杂质的第一和第二掺杂区交替设置一次或多次; 以及设置在n型半导体层和p型半导体层之间的有源层，其中p型半导体层包括在第一和第二掺杂区域之间的至少一个界面，以防止p型杂质的扩散。

公开(公告)号：US20160100760A1

公开(公告)日：2016-04-14

申请号：US14797882

申请日：2015-07-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jiwon RYU ,  Young Sun KIM ,  Won-Chul BANG

IPC: A61B5/00 ,  A61B6/03 ,  A61B8/08 ,  A61B5/055

CPC classification number: A61B5/0037 ,  A61B5/055 ,  A61B5/1114 ,  A61B5/6814 ,  A61B5/7445 ,  A61B6/025 ,  A61B6/032 ,  A61B6/037 ,  A61B6/405 ,  A61B6/4291 ,  A61B6/482 ,  A61B6/502 ,  A61B6/5235 ,  A61B6/5247 ,  A61B90/39 ,  A61B2090/3925 ,  A61B2090/3954 ,  A61B2090/3966 ,  G01R33/5608 ,  G06F19/321 ,  G06T7/33 ,  G06T2207/10072 ,  G06T2207/10132 ,  G06T2207/30204 ,  G16H40/63

Abstract: There are provided a medical imaging apparatus and a method for controlling a medical imaging apparatus. The medical imaging apparatus includes an image registering unit configured to register a pre-imaged medical image with respect to an object based on a first reference point included in the pre-imaged medical image and a second reference point of the object; a location detecting unit configured to detect a user's movement based on the second reference point; and a user interface configured to display a pre-imaged medical image corresponding to the detected movement of the user.

Abstract translation: 提供了一种医疗成像设备和用于控制医学成像设备的方法。 医疗成像装置包括：图像登记单元，被配置为基于包括在预成像医疗图像中的第一参考点和对象的第二参考点来登记相对于对象的预成像医疗图像; 位置检测单元，被配置为基于所述第二参考点来检测用户的移动; 以及用户界面，被配置为显示与所检测的用户的移动相对应的预先成像的医学图像。

公开(公告)号：US20130098293A1

公开(公告)日：2013-04-25

申请号：US13655696

申请日：2012-10-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Hyun LEE ,  Hyun Seok RYU ,  Jung Hyun LEE ,  Ki Sung KIM ,  Suk Ho YOON ,  Young Sun KIM

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45565 ,  C23C16/45578 ,  C23C16/4558 ,  C23C16/4583 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262

Abstract: A chemical vapor deposition apparatus can include a reaction chamber having a reaction space therein; a wafer boat disposed in the reaction space, the wafer boat arranged and structured to support a plurality of wafers; and a gas supplying part disposed in the reaction chamber to supply two or more reaction gases to the plurality of wafers. The gas supplying part can include a plurality of gas pipes disposed in the reaction chamber to supply the two or more reaction gases from outside to the reaction space; and a plurality of supplying pipes disposed around the wafer boat, wherein each of the supplying pipes is connected to two or more corresponding gas pipes, and wherein each supplying pipe is configured to supply the two or more reaction gases supplied by the two or more corresponding gas pipes to a corresponding one of the wafers.

Abstract translation: 化学气相沉积装置可以包括其中具有反应空间的反应室; 设置在所述反应空间中的晶片舟，所述晶片舟被布置和构造为支撑多个晶片; 以及设置在所述反应室中以将多个反应气体供应到所述多个晶片的气体供给部。 气体供给部可以包括设置在反应室中的多个气体管道，用于从外部向反应空间供给两种或更多种反应气体; 以及设置在所述晶片舟周围的多个供给管，其中，所述供给管中的每一个连接到两个以上对应的气体管，并且其中每个供给管被构造成供给由所述两个或更多个相应的 将气体管道连接到相应的一个晶片。

公开(公告)号：US20130099248A1

公开(公告)日：2013-04-25

申请号：US13655250

申请日：2012-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bum Joon KIM ,  Sung Tae KIM ,  Young Sun KIM ,  Suk Ho YOON ,  Ki Sung KIM ,  Ho Chul LEE

IPC: H01L33/32

CPC classification number: H01L33/14 ,  H01L33/32

Abstract: There is provided a nitride semiconductor light emitting device including an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer disposed on the active layer. One or more current diffusion layers are disposed on a surface of the n-type nitride semiconductor layer. The current diffusion layer(s) includes a material having greater band gap energy than that of a material forming the n-type nitride semiconductor layer so as to form a two-dimensional electron gas layer at an interface with the material forming the n-type nitride semiconductor layer.

Abstract translation: 提供了包括n型氮化物半导体层，设置在n型氮化物半导体层上的有源层和设置在有源层上的p型氮化物半导体层的氮化物半导体发光器件。 一个或多个电流扩散层设置在n型氮化物半导体层的表面上。 电流扩散层包括具有比形成n型氮化物半导体层的材料更大的带隙能量的材料，以便在与形成n型氮化物半导体层的材料的界面处形成二维电子气层 氮化物半导体层。