公开(公告)号：US20130099248A1

公开(公告)日：2013-04-25

申请号：US13655250

申请日：2012-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bum Joon KIM ,  Sung Tae KIM ,  Young Sun KIM ,  Suk Ho YOON ,  Ki Sung KIM ,  Ho Chul LEE

IPC: H01L33/32

CPC classification number: H01L33/14 ,  H01L33/32

Abstract: There is provided a nitride semiconductor light emitting device including an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer disposed on the active layer. One or more current diffusion layers are disposed on a surface of the n-type nitride semiconductor layer. The current diffusion layer(s) includes a material having greater band gap energy than that of a material forming the n-type nitride semiconductor layer so as to form a two-dimensional electron gas layer at an interface with the material forming the n-type nitride semiconductor layer.

Abstract translation: 提供了包括n型氮化物半导体层，设置在n型氮化物半导体层上的有源层和设置在有源层上的p型氮化物半导体层的氮化物半导体发光器件。 一个或多个电流扩散层设置在n型氮化物半导体层的表面上。 电流扩散层包括具有比形成n型氮化物半导体层的材料更大的带隙能量的材料，以便在与形成n型氮化物半导体层的材料的界面处形成二维电子气层 氮化物半导体层。

公开(公告)号：US20130255578A1

公开(公告)日：2013-10-03

申请号：US13798772

申请日：2013-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tan SAKONG ,  Do Young RHEE ,  Ki Sung KIM ,  Suk Ho YOON ,  Young Sun KIM ,  Sung Tae KIM

IPC: H01L21/02

CPC classification number: H01L21/02104 ,  C23C16/4584 ,  C23C16/46

Abstract: A chemical vapor deposition (CVD) apparatus including a chamber, a susceptor in the chamber, and a heating chamber may be provided. The susceptor includes a rotor, a rotational shaft coupled to a lower portion of the rotor, a driving device coupled to the rotational shaft, and at least one pocket defined at an upper surface of the rotor. The driving device rotatably drives the rotational shaft. The at least one pocket includes a mounting portion configured to receive a substrate thereon and a protruding portion, e.g., a convex portion, protruding from a bottom surface of the at least one pocket such that the protruding portion is positioned at a region corresponding to the rotational shaft. The heating unit surrounds the rotational shaft and heats the substrate.

Abstract translation: 可以提供包括室，腔室中的基座和加热室的化学气相沉积（CVD）设备。 基座包括转子，联接到转子的下部的旋转轴，耦合到旋转轴的驱动装置和限定在转子的上表面的至少一个凹部。 驱动装置可旋转地驱动旋转轴。 所述至少一个口袋包括被配置为在其上容纳衬底的安装部分和从所述至少一个口袋的底表面突出的突出部分，例如凸起部分，使得所述突出部分位于对应于 旋转轴。 加热单元围绕旋转轴并加热基板。

公开(公告)号：US20130098293A1

公开(公告)日：2013-04-25

申请号：US13655696

申请日：2012-10-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Hyun LEE ,  Hyun Seok RYU ,  Jung Hyun LEE ,  Ki Sung KIM ,  Suk Ho YOON ,  Young Sun KIM

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45565 ,  C23C16/45578 ,  C23C16/4558 ,  C23C16/4583 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262

Abstract: A chemical vapor deposition apparatus can include a reaction chamber having a reaction space therein; a wafer boat disposed in the reaction space, the wafer boat arranged and structured to support a plurality of wafers; and a gas supplying part disposed in the reaction chamber to supply two or more reaction gases to the plurality of wafers. The gas supplying part can include a plurality of gas pipes disposed in the reaction chamber to supply the two or more reaction gases from outside to the reaction space; and a plurality of supplying pipes disposed around the wafer boat, wherein each of the supplying pipes is connected to two or more corresponding gas pipes, and wherein each supplying pipe is configured to supply the two or more reaction gases supplied by the two or more corresponding gas pipes to a corresponding one of the wafers.

Abstract translation: 化学气相沉积装置可以包括其中具有反应空间的反应室; 设置在所述反应空间中的晶片舟，所述晶片舟被布置和构造为支撑多个晶片; 以及设置在所述反应室中以将多个反应气体供应到所述多个晶片的气体供给部。 气体供给部可以包括设置在反应室中的多个气体管道，用于从外部向反应空间供给两种或更多种反应气体; 以及设置在所述晶片舟周围的多个供给管，其中，所述供给管中的每一个连接到两个以上对应的气体管，并且其中每个供给管被构造成供给由所述两个或更多个相应的 将气体管道连接到相应的一个晶片。

公开(公告)号：US20140235005A1

公开(公告)日：2014-08-21

申请号：US14106783

申请日：2013-12-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hyun LEE ,  Ki Sung KIM ,  Bum Joon KIM ,  Tan Sakong ,  Suk Ho YOON ,  Jae Deok JEONG

IPC: H01L33/00 ,  H01L21/02

CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0066

Abstract: A method of producing a p-type nitride semiconductor includes growing a first nitride semiconductor layer doped with a first concentration of a p-type impurity. The first nitride semiconductor layer is annealed to activate the p-type impurity. A second nitride semiconductor layer doped with a second concentration of a p-type impurity is grown on the first nitride semiconductor layer. The second concentration is higher than the first concentration.

Abstract translation: 制造p型氮化物半导体的方法包括生长掺杂有第一浓度的p型杂质的第一氮化物半导体层。 对第一氮化物半导体层进行退火以激活p型杂质。 在第一氮化物半导体层上生长掺杂有第二浓度的p型杂质的第二氮化物半导体层。 第二浓度高于第一浓度。

公开(公告)号：US20130316481A1

公开(公告)日：2013-11-28

申请号：US13846905

申请日：2013-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki Ho PARK ,  Ki Sung KIM ,  Chul Min KIM ,  Suk Ho YOON ,  Tae Hyun LEE

IPC: H01L33/00

CPC classification number: H01L33/0079

Abstract: A method for manufacturing a semiconductor light emitting device is provided. The method includes forming a light emitting structure by sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a semiconductor growth substrate A support unit is disposed on the second conductivity-type semiconductor layer, so as to be combined with the light emitting structure. The semiconductor growth substrate is separated from the light emitting structure. An interface between the semiconductor growth substrate and a remaining light emitting structure is wet-etched such that the light emitting structure remaining on the separated semiconductor growth substrate is separated therefrom. The semiconductor growth substrate is cleaned.

Abstract translation: 提供一种制造半导体发光器件的方法。 该方法包括通过在半导体生长衬底上顺序生长第一导电类型半导体层，有源层和第二导电类型半导体层来形成发光结构。支撑单元设置在第二导电型半导体层上， 以便与发光结构组合。 半导体生长衬底与发光结构分离。 湿式蚀刻半导体生长衬底和剩余的发光结构之间的界面，使得保留在分离的半导体生长衬底上的发光结构与其分离。 清洁半导体生长衬底。

公开(公告)号：US20130244353A1

公开(公告)日：2013-09-19

申请号：US13844569

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Do Young RHEE ,  Tan SAKONG ,  Ki Sung KIM ,  Suk Ho YOON ,  Young Sun KIM ,  Sung Tae KIM

IPC: H01L33/00 ,  H01L33/26

CPC classification number: H01L33/005 ,  H01L33/26

Abstract: Provided a method of manufacturing a semiconductor light emitting device, the method includes forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate. The forming of the light emitting structure includes: forming a protective layer after a portion of the light emitting structure is formed forming a sacrificial layer on the protective layer; and continuously forming a further portion of the light emitting structure on the sacrificial layer.

Abstract translation: 提供一种制造半导体发光器件的方法，该方法包括通过在衬底上生长第一导电类型半导体层，有源层和第二导电类型半导体层来形成发光结构。 发光结构的形成包括：在形成发光结构的一部分之后形成保护层，在保护层上形成牺牲层; 并且在牺牲层上连续地形成发光结构的另一部分。

公开(公告)号：US20130099255A1

公开(公告)日：2013-04-25

申请号：US13660947

申请日：2012-10-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hyun LEE ,  Jung Hyun LEE ,  Ki Sung KIM ,  Suk Ho YOON ,  Young Sun KIM

IPC: H01L33/00

CPC classification number: C23C16/407 ,  C23C16/45578 ,  H01L33/32 ,  H01L33/42 ,  H01L2933/0016

Abstract: There is provided a semiconductor light emitting device having a zinc oxide-based transparent conductive thin film in which a Group III element is doped to have waveforms having a plurality of periods in a thickness direction.

Abstract translation: 提供了一种具有氧化锌基透明导电薄膜的半导体发光器件，其中掺杂了III族元素以具有在厚度方向上具有多个周期的波形。