公开(公告)号：US20250091077A1

公开(公告)日：2025-03-20

申请号：US18661139

申请日：2024-05-10

Applicant: SAMSUNG ELECTRONICS CO, LTD.

Inventor： Min Suk KANG ,  Young-Hoo KIM ,  Sung Hyun PARK ,  Jin Seon YOU ,  Tae-Hong KIM ,  Woo Gwan SHIM

IPC: B05B14/00 ,  B05B15/50

Abstract: A home port includes: a cylindrical body including: an open upper, a lower end, and an outlet in the lower end of the cylindrical body; a cover covering the open upper end; a pipe connected to the outlet; and a first bracket between the cover and the outlet, wherein a hole is provided in the first bracket, the first bracket has an inclined surface inclined from a first side of the first bracket to a second side of the first bracket, a vertical level of the first side of the first bracket is higher than a vertical level of the second side of the first bracket, and the hole of the first bracket is provided at the second side of the first bracket.

公开(公告)号：US20240379545A1

公开(公告)日：2024-11-14

申请号：US18427135

申请日：2024-01-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Wan HAN ,  Bona BAEK ,  Byungkeun KIM ,  Young-Hoo KIM ,  Jeonghun KIM

IPC: H01L23/528 ,  H01L23/532

Abstract: A semiconductor device comprising: a substrate; and a conductive structure on the substrate, wherein the conductive structure comprises: a lower conductive structure comprising a lower conductive pattern; and an upper conductive structure comprising an upper conductive pattern, wherein the upper conductive structure is on the lower conductive structure, wherein at least one of a first side surface of the lower conductive pattern or a second side surface of the upper conductive pattern comprises a rough surface, and wherein a first width of a lower surface of the upper conductive pattern in a first direction parallel to a lower surface of the substrate is substantially equal to or less than a second width of an upper surface of the lower conductive pattern in the first direction.

公开(公告)号：US20220415680A1

公开(公告)日：2022-12-29

申请号：US17664243

申请日：2022-05-20

Applicant: Semes Co., Ltd. ,  Samsung Electronics Co., Ltd.

Inventor： Jaeseong LEE ,  Kihoon CHOI ,  Hae-Won CHOI ,  Jihoon JEONG ,  Seohyun KIM ,  Young-Hoo KIM ,  Sangjine PARK ,  Kuntack LEE

IPC: H01L21/67 ,  H01L21/687

Abstract: A substrate processing apparatus includes a chamber including an upper chamber and a lower chamber coupled to each other to provide a space for processing a substrate, a substrate support configured to support the substrate within the chamber, an upper supply port provided in the upper chamber and configured to supply a supercritical fluid on an upper surface of the substrate within the chamber, a recess provided in a lower surface of the upper chamber, the recess including a horizontal extension portion extending in a direction parallel with the upper surface of the substrate in a radial direction from an outlet of the upper supply port and an inclined extension portion extending obliquely at an angle from the horizontal extension portion, and a baffle member disposed within the recess between the upper supply port and the substrate.

公开(公告)号：US20200152486A1

公开(公告)日：2020-05-14

申请号：US16420776

申请日：2019-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Hoo KIM ,  Kuntack LEE ,  Yong-Jhin CHO ,  Chawon KOH ,  Sunghyun PARK ,  Hyosan LEE ,  Ji Hoon CHA ,  Soo Young CHOI

IPC: H01L21/67 ,  H01L21/02

Abstract: Disclosed are substrate drying methods, photoresist developing methods, and/or photolithography methods. The substrate drying method including providing a drying liquid on a substrate, increasing a pressure of the drying liquid to produce a supercritical fluid, and removing the supercritical fluid to dry the substrate may be provided.

公开(公告)号：US20140373881A1

公开(公告)日：2014-12-25

申请号：US14207903

申请日：2014-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Min OH ,  Kyoungseob KIM ,  Young-Hoo KIM ,  Yongsun KO ,  Kuntack LEE ,  Yongmyung JUN ,  Yong-Jhin CHO

IPC: H01L21/67

CPC classification number: H01L21/67051 ,  H01L21/68728 ,  H01L21/6875

Abstract: A substrate treating apparatus including a support member configured to support a substrate container configured to surround an upper portion of the support member, a nozzle member including at least one nozzle, which is configured to spray a treating solution onto the substrate disposed on the support member, and a treating solution supply unit connected to the nozzle and configured to supply the treating solution to the nozzle through a main tube may be provided.

Abstract translation: 一种基板处理装置，包括：支撑构件，其构造成支撑构造成围绕支撑构件的上部的基板容器;喷嘴构件，包括至少一个喷嘴，其构造成将处理溶液喷射到设置在支撑构件上的基板上; 并且可以设置连接到喷嘴并且被配置为通过主管将处理溶液供应到喷嘴的处理溶液供应单元。

公开(公告)号：US20250153122A1

公开(公告)日：2025-05-15

申请号：US18741245

申请日：2024-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNGHYUN PARK ,  Minsuk KANG ,  Young-Hoo KIM ,  Jinseon YOU ,  Tae-Hong KIM ,  Woogwan SHIM

IPC: B01F35/221 ,  B01F35/21 ,  B01F35/90 ,  B01F35/92 ,  B01F101/58 ,  H01L21/67

Abstract: A chemical liquid exchange method includes: recovering, by a first recycling tank, a first portion of a first chemical liquid that was previously used in a chamber; recovering, by a second recycling tank, a second portion of the first chemical liquid that was previously used in the chamber; supplying, from the first recycling tank, the first portion of the first chemical liquid to a first sub-tank; draining, from the second recycling tank, the second portion of the first chemical liquid; supplying, from the first sub-tank, the first portion of the first chemical liquid to a main tank; and receiving, by a second sub-tank, a second chemical liquid from an outside; and supplying, from the second sub-tank, the second chemical liquid to the main tank.

公开(公告)号：US20250105032A1

公开(公告)日：2025-03-27

申请号：US18442548

申请日：2024-02-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun PARK ,  Min Suk KANG ,  Young-Hoo KIM ,  Jin Seon YOU ,  Tae-Hong KIM ,  Woo Gwan SHIM

IPC: H01L21/67

Abstract: A chemical liquid supply apparatus is provided and includes an additive supply, a chemical liquid supply, and a controller that controls the additive supply and the chemical liquid supply. The additive supply includes a first tank that receives an additive from an additive container, and a first circulating pipe connected to the first tank. The chemical liquid supply includes an auxiliary tank that receives an etching liquid from another container and receives the additive, and a second circulating pipe connected to the auxiliary tank. The controller provides control so as to: circulate the additive in the first tank; heat the etching liquid in the auxiliary tank using a heater such that a temperature of the etching liquid is increased to a first temperature; supply the additive to the auxiliary tank; and produce a chemical liquid by circulating the etching liquid and the additive at the first temperature.

公开(公告)号：US20230343613A1

公开(公告)日：2023-10-26

申请号：US18214096

申请日：2023-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Jun CHOI ,  Seok Hoon KIM ,  Young-Hoo KIM ,  In Gi KIM ,  Sung Hyun PARK ,  Seung Min SHIN ,  Kun Tack LEE ,  Jinwoo LEE ,  Hun Jae JANG ,  Ji Hoon CHA

IPC: H01L21/67 ,  B08B3/08 ,  H01L21/687

CPC classification number: H01L21/67167 ,  H01L21/67063 ,  H01L21/67051 ,  B08B3/08 ,  H01L21/67034 ,  H01L21/68707

Abstract: A multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.

公开(公告)号：US20210060625A1

公开(公告)日：2021-03-04

申请号：US16890490

申请日：2020-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Min SHIN ,  Hun Jae JANG ,  Seok Hoon KIM ,  Young-Hoo KIM ,  In Gi KIM ,  Tae-Hong KIM ,  Kun Tack LEE ,  Ji Hoon CHA ,  Yong Jun CHOI

IPC: B08B7/00 ,  B08B3/10 ,  H01L21/67 ,  H01L21/687 ,  H01L21/311

Abstract: A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.

公开(公告)号：US20180096856A1

公开(公告)日：2018-04-05

申请号：US15833184

申请日：2017-12-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoung Hwan KIM ,  Ingi KIM ,  Mihyun PARK ,  Young-Hoo KIM ,  Ui-soon PARK ,  Jung-Min OH ,  Kuntack LEE ,  Hyosan LEE

IPC: H01L21/311 ,  H01L21/67

CPC classification number: H01L21/31111 ,  H01L21/67086 ,  H01L21/67253 ,  H01L21/67288

Abstract: A substrate treating apparatus and a method of treating a substrate, the apparatus including a substrate treater that treats a substrate using a chemical solution, the chemical solution including a phosphoric acid aqueous solution and a silicon compound; and a chemical solution supplier that supplies the chemical solution to the substrate treating unit, wherein the chemical solution supplier includes a concentration measurer that measures concentrations of the chemical solutions, the concentration measurer including a first concentration measurer that measures a water concentration of the chemical solution; and a second concentration measurer that measures a silicon concentration of the chemical solution.