公开(公告)号：US20240393692A1

公开(公告)日：2024-11-28

申请号：US18624406

申请日：2024-04-02

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Hyeon PARK ,  Ran NAMGUNG ,  Kyoungjin HA ,  Daeseok SONG ,  Minsoo KIM

IPC: G03F7/11 ,  C08F220/28 ,  C09D133/14

Abstract: A resist topcoat composition and a method of forming patterns using the resist topcoat composition are provided. The resist topcoat composition includes a copolymer including a first structural unit represented by Chemical Formula M-1, a second structural unit represented by Chemical Formula M-2, and a third structural unit including at least one of structural units represented by Chemical Formula M-3A, Chemical Formula M-3B, Chemical Formula M-3C, and Chemical Formula M-3D; and a solvent.

公开(公告)号：US20240329536A1

公开(公告)日：2024-10-03

申请号：US18580110

申请日：2022-07-04

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Hyungrang MOON ,  Minyoung LEE ,  Ryunmin HEO ,  Jamin KU ,  Donghyung LEE ,  Dasom HAN ,  Minsoo KIM ,  Jaehyun KIM

IPC: G03F7/11 ,  G03F7/004 ,  G03F7/16

CPC classification number: G03F7/11 ,  G03F7/0042 ,  G03F7/161 ,  G03F7/168

Abstract: Provided are composition for removing edge beads from metal-containing resists, and a method of forming patterns including a step of removing edge beads using the same and the composition includes an organic solvent and a compound having an A log P3 of greater than or equal to 30 Å2.

公开(公告)号：US20210240082A1

公开(公告)日：2021-08-05

申请号：US17153095

申请日：2021-01-20

Applicant: Samsung SDI Co., Ltd.

Inventor： Jaeyeol BAEK ,  Soonhyung KWON ,  Minsoo KIM ,  Hyeon PARK ,  Shinhyo BAE ,  Daeseok SONG ,  Yoojeong CHOI

IPC: G03F7/11 ,  G03F7/26 ,  G03F7/004 ,  G03F7/16 ,  C07D251/32

Abstract: A resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent. A method of forming patterns uses the resist underlayer composition under a photoresist pattern to enhance the sensitivity of the photoresist to an exposure light source, thereby providing enhanced resolution and faster processing times.

公开(公告)号：US20170176861A1

公开(公告)日：2017-06-22

申请号：US15355088

申请日：2016-11-18

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Younhee NAM ,  Sunghwan KIM ,  Minsoo KIM ,  Youjung PARK ,  Seulgi JEONG

IPC: G03F7/11 ,  C08G61/12 ,  H01L21/308 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26 ,  C08G61/10 ,  C09D165/00

CPC classification number: G03F7/11 ,  C08G8/04 ,  C08G8/24 ,  C08G61/02 ,  C08G61/10 ,  C08G61/12 ,  C08G61/124 ,  C08G2261/1422 ,  C08G2261/312 ,  C08G2261/314 ,  C08G2261/3142 ,  C08G2261/3241 ,  C08G2261/3326 ,  C08G2261/3424 ,  C08G2261/344 ,  C09D165/00 ,  G03F7/0752 ,  G03F7/094 ,  G03F7/162 ,  G03F7/20 ,  G03F7/26 ,  G03F7/36 ,  H01L21/0332 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3086

Abstract: A polymer, an organic layer composition, and a method of forming patterns, the polymer including a structural unit represented by Chemical Formula 1:

公开(公告)号：US20160355699A1

公开(公告)日：2016-12-08

申请号：US15076694

申请日：2016-03-22

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Minsoo KIM ,  Younhee NAM ,  Jaeyeol BAEK ,  Hyunji SONG ,  Byeri YOON ,  Seulgi JEONG ,  Seunghee HONG ,  Sunmin HWANG

IPC: C09D161/06 ,  H01L21/033 ,  H01L21/027 ,  G03F7/11

CPC classification number: C09D161/06 ,  C08G8/10 ,  C08G8/20 ,  C08G8/24 ,  G03F7/0752 ,  G03F7/094 ,  H01L21/0332

Abstract: An organic layer composition includes a first compound having a thermal shrinkage ratio of about 10% to about 70%, a second compound having a smaller thermal shrinkage ratio than the first compound, and a solvent, and an organic layer obtained by curing the organic layer composition and a method of forming patterns using the organic layer composition are disclosed.A method of measuring the thermal shrinkage ratio is described in the detailed description.

Abstract translation: 在详细描述中描述了热收缩率的测量方法。

公开(公告)号：US20240393698A1

公开(公告)日：2024-11-28

申请号：US18627133

申请日：2024-04-04

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Si-Kyun PARK ,  Minsoo KIM ,  Jin-Hee BAE ,  Hyungrang MOON ,  Taeksoo KWAK ,  Jongpil HO ,  Dong Wan RYU ,  Ahra CHO ,  Myoungsoo SONG ,  Gyeonghun PARK ,  Jin Hee CHOI

IPC: G03F7/32 ,  G03F7/004 ,  G03F7/16

Abstract: A composition configured for removing edge beads from metal-containing resists and/or as a developer composition of metal-containing resists is water-free and includes an organic solvent and at least one additive selected from among an amino acid-based compound, a sulfur-containing acid compound, and a sulfur-containing amine-based compound. A method of forming patterns using the composition includes coating a metal-containing resist composition on a substrate; coating the composition configured for removing edge beads from metal-containing resists of the present embodiments along edges of the substrate; drying and heating to form a metal-containing resist film on the substrate; exposing the metal-containing photoresist film; and developing the metal-containing resist film with the developer composition of metal-containing resists.

公开(公告)号：US20240272556A1

公开(公告)日：2024-08-15

申请号：US18508171

申请日：2023-11-13

Applicant: SAMSUNG SDI CO., LTD.

Inventor： GyeongRyeong BAK ,  Hyungrang MOON ,  Ryunmin HEO ,  TaekSoo KWAK ,  Taegeun SEONG ,  ChungHeon LEE ,  Byeonggyu HWANG ,  Minsoo KIM

IPC: G03F7/32 ,  G03F7/16

CPC classification number: G03F7/32

Abstract: Disclosed are a metal-containing photoresist developer composition, and a method of forming patterns including a developing step utilizing the metal-containing photoresist developer composition. The metal-containing photoresist developer composition includes an organic solvent, an acid compound having 1.0≤pKa1≤4.8, and at least one alcohol-based compound selected from a diol compound derived from an acyclic hydrocarbon and a cyclic alcohol compound.

公开(公告)号：US20230288809A1

公开(公告)日：2023-09-14

申请号：US18006135

申请日：2021-11-11

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Yoojeong CHOI ,  Soonhyung KWON ,  Minsoo KIM ,  Seongjin KIM ,  Jaeyeol BAEK ,  Hwayoung JIN ,  Hyeon PARK ,  Shinhyo BAE ,  Daeseok SONG ,  Minki CHON

IPC: G03F7/11 ,  C08G75/045 ,  C08F26/06 ,  G03F7/38

CPC classification number: G03F7/11 ,  C08G75/045 ,  C08F26/06 ,  G03F7/38

Abstract: Provided are a resist underlayer composition including a polymer having a ring backbone including two or more nitrogen atoms in a ring, a compound represented by Chemical Formula 1, and a solvent; and a method of forming patterns using the resist underlayer composition:




The definitions of Chemical Formula 1 are as described in the detailed description.

公开(公告)号：US20230103089A1

公开(公告)日：2023-03-30

申请号：US17868563

申请日：2022-07-19

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Yoojeong CHOI ,  Soonhyung KWON ,  Minsoo KIM ,  Seongjin KIM ,  Jaeyeol BAEK ,  Hwayoung JIN ,  Ran NAMGUNG ,  Hyeon PARK ,  Daeseok SONG

IPC: G03F7/11 ,  C07D251/32 ,  C07D405/06 ,  C07D209/86 ,  C07D209/62 ,  C07D333/54 ,  C07D339/08 ,  C07C39/23 ,  C08K5/378 ,  C08K5/3417 ,  C08K5/45

Abstract: A resist underlayer composition including a polymer including a main chain, a side chain, or a main chain and a side chain including a heterocycle including two or more nitrogen atoms in the ring of the heterocycle, a compound including a moiety represented by Chemical Formula 1, and a solvent is provided. A method of forming patterns using the resist underlayer composition is also provided

公开(公告)号：US20230038110A1

公开(公告)日：2023-02-09

申请号：US17858921

申请日：2022-07-06

Applicant: SAMSUNG SDI CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minyoung LEE ,  Hyungrang MOON ,  Ryunmin HEO ,  Minsoo KIM ,  Youngkwon KIM ,  Jaehyun KIM ,  Changsoo WOO ,  Jung Min CHOI ,  Moohyun KOH ,  Jungah KIM ,  Sungan DO ,  Sang Won BAE ,  Hoon HAN ,  SukKoo HONG

IPC: G03F7/16 ,  G03F7/11

Abstract: A composition for removing edge beads from a metal-containing resist, and a method of forming patterns including step of removing edge beads using the same are provided. The composition for removing edge beads from a metal-containing resist includes an organic solvent, and a heptagonal ring compound substituted with at least one hydroxyl group (—OH). The heptagonal ring compound has at least two double bonds in the ring.