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    CIRCUIT WITH TRANSISTORS HAVING COUPLED GATES
    11.
    发明申请
    CIRCUIT WITH TRANSISTORS HAVING COUPLED GATES 审中-公开

    公开(公告)号：US20180026630A1

    公开(公告)日：2018-01-25

    申请号：US15215310

    申请日：2016-07-20

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Jaume ROIG-GUITART ,  Balaji PADMANABHAN ,  Prasad VENKATRAMAN

    IPC: H03K17/687 ,  H01L29/20 ,  H01L29/778

    CPC classification number: H03K17/165 ,  H03K2217/0036 ,  H03K2217/0054

    Abstract: A circuit can include a first transistor including a source and a gate; a second transistor including a drain and a gate, wherein the source of the first transistor is coupled to the drain of the second transistor; and a switchable element. In one embodiment, a first current-carrying terminal of the switchable element is coupled to the gate of the first transistor, and a second current-carrying terminal of the switchable element is coupled to the gate of the second transistor. In another embodiment, the switchable element is coupled to the gate of the first transistor and includes a first selectable terminal of the switchable element coupled to a source of the second transistor, and a second selectable terminal of the switchable element coupled to the gate of the second transistor. In a particular embodiment, the circuit can be a cascode circuit

    ELECTRONIC DEVICE INCLUDING A TRANSISTOR AND A VARIABLE CAPACITOR
    14.
    发明申请
    ELECTRONIC DEVICE INCLUDING A TRANSISTOR AND A VARIABLE CAPACITOR 审中-公开

    公开(公告)号：US20200098745A1

    公开(公告)日：2020-03-26

    申请号：US16141557

    申请日：2018-09-25

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Jaume ROIG-GUITART

    IPC: H01L27/06 ,  H01L29/778 ,  H01L29/93 ,  H01L27/088 ,  H01L29/861 ,  H03K17/687

    Abstract: In an aspect, a circuit can include a first HEMT, a second HEMT, and a variable capacitor. A drain of the first HEMT can be coupled to a source of the second HEMT. An electrode of the variable capacitor can be coupled to a source of the first HEMT, and another electrode of the variable capacitor can be coupled to a gate of the second HEMT. In another aspect, an electronic device can include a die including a HEMT and a variable capacitor. An electrode of the variable capacitor can be coupled to a source or a gate of the HEMT, and another electrode of the variable capacitor can be coupled to an external terminal of the die. In a further aspect, an electronic device comprising a die, wherein the die includes a variable capacitor, a first diode, and a second diode.

    ELECTRONIC DEVICE INCLUDING A TEMPERATURE SENSOR
    16.
    发明申请
    ELECTRONIC DEVICE INCLUDING A TEMPERATURE SENSOR 审中-公开

    公开(公告)号：US20180356296A1

    公开(公告)日：2018-12-13

    申请号：US15621093

    申请日：2017-06-13

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Jaume ROIG-GUITART ,  Herbert DE VLEESCHOUWER ,  Gordon M. GRIVNA

    IPC: G01K7/20 ,  G01K7/01 ,  H01L29/08

    Abstract: An electronic device can include a temperature sensor. The temperature sensor can include a drain electrode including drain fingers spaced apart from the source fingers; a source electrode including source fingers spaced apart from the drain fingers; and a gate electrode including a runner, gate fingers and a conductive bridge. In an embodiment, the runner includes a first portion and a second portion spaced apart from the first portion, the gate fingers are coupled to the runner and each gate finger is disposed between a pair of the source and drain fingers. The conductive bridge connects at least two gate fingers, wherein the conductive bridge is along a conduction path between the first and second portions of the runner. Designs for the temperature sensor may provide a more accurate temperature measurement reflective of a transistor within the electronic device.

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