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    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
    12.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20160300952A1

    公开(公告)日：2016-10-13

    申请号：US15091009

    申请日：2016-04-05

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Satoshi TORIUMI ,  Takashi HAMADA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Ryunosuke HONDA ,  Shunpei YAMAZAKI

    IPC: H01L29/786 ,  H01L29/51 ,  H01L27/105 ,  H01L29/417 ,  H01L27/12 ,  H01L29/24 ,  H01L29/49

    Abstract: A minute transistor is provided. A semiconductor device includes a semiconductor over a substrate, a first conductor and a second conductor over the semiconductor, a first insulator over the first conductor and the second conductor, a second insulator over the semiconductor, a third insulator over the second insulator, and a third conductor over the third insulator. The third insulator is in contact with a side surface of the first insulator. The semiconductor includes a first region where the semiconductor overlaps with a bottom surface of the first conductor, a second region where the semiconductor overlaps with a bottom surface of the second conductor, and a third region where the semiconductor overlaps with a bottom surface of the third conductor. The length between a top surface of the semiconductor and the bottom surface of the third conductor is longer than the length between the first region and the third region.

    Abstract translation: 提供一分钟晶体管。 半导体器件包括衬底上的半导体，半导体上的第一导体和第二导体，第一导体和第二导体上的第一绝缘体，半导体上的第二绝缘体，第二绝缘体上的第三绝缘体，以及 第三绝缘体上的第三导体。 第三绝缘体与第一绝缘体的侧表面接触。 半导体包括半导体与第一导体的底表面重叠的第一区域，半导体与第二导体的底表面重叠的第二区域和半导体与第三导体的底表面重叠的第三区域 导体。 半导体的顶表面和第三导体的底表面之间的长度比第一区域和第三区域之间的长度长。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    13.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20160276487A1

    公开(公告)日：2016-09-22

    申请号：US15070320

    申请日：2016-03-15

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Satoshi TORIUMI ,  Takashi HAMADA

    IPC: H01L29/786 ,  H01L29/04 ,  H01L21/477 ,  H01L27/146 ,  H01L27/12 ,  H01L23/528 ,  H01L23/522 ,  H01L27/105 ,  H01L29/66 ,  H01L21/02

    CPC classification number: H01L29/7869 ,  H01L21/02211 ,  H01L21/28158 ,  H01L21/477 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/1225 ,  H01L27/14616 ,  H01L27/14632 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78696

    Abstract: A transistor with favorable electrical characteristics is provided. A minute transistor is provided. Provided is a semiconductor device including a first insulator over a substrate, a second insulator over the first insulator, a semiconductor over the second insulator, a first conductor and a second conductor over the semiconductor, a third insulator over the semiconductor, a fourth insulator over the third insulator, a third conductor over the fourth insulator, and a fifth insulator over the first insulator, the first conductor, and the second conductor. In the semiconductor device, the second insulator and the third insulator each include at least one element other than oxygen included in the semiconductor, respectively, and the semiconductor includes a region having a carbon concentration of 3×1018 atoms/cm3 or lower.

    Abstract translation: 提供具有良好电特性的晶体管。 提供一分钟晶体管。 提供了一种半导体器件，其包括在衬底上的第一绝缘体，在第一绝缘体上的第二绝缘体，在第二绝缘体上的半导体，半导体上的第一导体和第二导体，半导体上的第三绝缘体， 所述第三绝缘体，在所述第四绝缘体上方的第三导体以及所述第一绝缘体上的第五绝缘体，所述第一导体和所述第二导体。 在半导体器件中，第二绝缘体和第三绝缘体分别包含除了包含在半导体中的氧以外的至少一种元素，半导体包括碳浓度为3×1018原子/ cm3以下的区域。

    SEMICONDUCTOR DEVICE
    14.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150255534A1

    公开(公告)日：2015-09-10

    申请号：US14636477

    申请日：2015-03-03

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Yoshinori YAMADA ,  Yusuke NONAKA ,  Masashi OOTA ,  Yoichi KUROSAWA ,  Noritaka ISHIHARA ,  Takashi HAMADA ,  Mitsuhiro ICHIJO ,  Yuji EGI

    IPC: H01L29/04 ,  H01L29/36 ,  H01L29/786

    CPC classification number: H01L29/78693 ,  H01L27/1156 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

    Abstract: A method for forming an oxide that can be used as a semiconductor of a transistor or the like is provided. In particular, a method for forming an oxide with fewer defects such as grain boundaries is provided. One embodiment of the present invention is a semiconductor device including an oxide semiconductor, an insulator, and a conductor. The oxide semiconductor includes a region overlapping with the conductor with the insulator therebetween. The oxide semiconductor includes a crystal grain with an equivalent circle diameter of 1 nm or more and a crystal grain with an equivalent circle diameter less than 1 nm.

    Abstract translation: 提供了可以用作晶体管等的半导体的氧化物的形成方法。 特别地，提供了形成具有较少缺陷如晶界的氧化物的方法。 本发明的一个实施例是包括氧化物半导体，绝缘体和导体的半导体器件。 氧化物半导体包括与导体重叠的区域，其间具有绝缘体。 氧化物半导体包括当量圆直径为1nm以上的晶粒和等效圆直径小于1nm的晶粒。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    15.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20220375938A1

    公开(公告)日：2022-11-24

    申请号：US17772423

    申请日：2020-10-29

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Yoshihiro KOMATSU ,  Yasumasa YAMANE ,  Shuhei NAGATSUKA ,  Takashi HAMADA ,  Hiroki KOMAGATA

    IPC: H01L27/108 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

    Abstract: A semiconductor device in which variation of characteristics is small is provided. A second insulator, an oxide, a conductive layer, and an insulating layer are formed over a first insulator; a third insulator and fourth insulator are deposited to be in contact with the first insulator; a first opening reaching the oxide is formed in the conductive layer, the insulating layer, the third insulator, and the fourth insulator; a fifth insulator, a sixth insulator, and a conductor are formed in the first opening; a seventh insulator is deposited over the fourth insulator, the fifth insulator, and the sixth insulator; a mask is formed in a first region over the seventh insulator in a top view; oxygen is implanted into a second region not overlapping the first region in the top view; heat treatment is performed; a second opening reaching the fourth insulator is formed in the seventh insulator; and heat treatment is performed.

    Display Device and Electronic Device
    16.
    发明申请
    Display Device and Electronic Device 有权

    公开(公告)号：US20210141265A1

    公开(公告)日：2021-05-13

    申请号：US17123392

    申请日：2020-12-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Yoshiharu HIRAKATA ,  Tetsuji ISHITANI ,  Daisuke KUBOTA ,  Ryo HATSUMI ,  Masaru NAKANO ,  Takashi HAMADA

    IPC: G02F1/1333

    Abstract: A display device including a peripheral circuit portion with high operation stability. The display device includes a first substrate and a second substrate. A first insulating layer is on a first plane of the first substrate, and a second insulating layer is on a first plane of the second substrate. An area of the first plane of the first substrate is the same as an area of the first plane of the second substrate. The first plane of the first substrate and the first plane of the second substrate face each other. A bonding layer is between the first insulating layer and the second insulating layer. A protection film is in contact with the first substrate, the first insulating layer, the bonding layer, the second insulating layer, and the second substrate.

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    18.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20240404884A1

    公开(公告)日：2024-12-05

    申请号：US18799170

    申请日：2024-08-09

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Tsutomu MURAKAWA ,  Shinya SASAGAWA ,  Naoto YAMADE ,  Takashi HAMADA ,  Hiroki KOMAGATA

    IPC: H01L21/8234 ,  H01L21/225 ,  H01L21/28 ,  H01L27/088 ,  H01L29/66 ,  H01L29/786

    Abstract: To provide a semiconductor device with less variations, a first insulator is deposited; a stack of first and second oxides and a first conductor is formed over the first insulator; a second insulator is formed over the first insulator and the stack; an opening is formed in the second insulator; a top surface of the second oxide is exposed by removing a region of the first conductor, second and third conductors are formed over the second oxide, and then cleaning is performed; a first oxide film is deposited in contact with a side surface of the first oxide and top and side surfaces of the second oxide; heat treatment is performed on an interface between the second oxide and the first oxide film through the first oxide film; and the second insulator is exposed and a fourth conductor, a third insulator, and a third oxide are formed in the opening.

    Display Device and Electronic Device
    19.
    发明公开
    Display Device and Electronic Device 审中-公开

    公开(公告)号：US20240004229A1

    公开(公告)日：2024-01-04

    申请号：US18137648

    申请日：2023-04-21

    Applicant: Semiconductor Energy Laboratory Co, Ltd.

    Inventor： Shunpei Yamazaki ,  Yoshiharu HIRAKATA ,  Tetsuji ISHITANI ,  Daisuke KUBOTA ,  Ryo HATSUMI ,  Masaru NAKANO ,  Takashi HAMADA

    IPC: G02F1/1333

    CPC classification number: G02F1/133345

    Abstract: A display device including a peripheral circuit portion with high operation stability. The display device includes a first substrate and a second substrate. A first insulating layer is on a first plane of the first substrate, and a second insulating layer is on a first plane of the second substrate. An area of the first plane of the first substrate is the same as an area of the first plane of the second substrate. The first plane of the first substrate and the first plane of the second substrate face each other. A bonding layer is between the first insulating layer and the second insulating layer. A protection film is in contact with the first substrate, the first insulating layer, the bonding layer, the second insulating layer, and the second substrate.

    SEMICONDUCTOR DEVICE
    20.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220399338A1

    公开(公告)日：2022-12-15

    申请号：US17773068

    申请日：2020-10-29

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Hiroki KOMAGATA ,  Yoshihiro KOMATSU ,  Shinya SASAGAWA ,  Takashi HAMADA ,  Yasumasa YAMANE ,  Shota MIZUKAMI

    IPC: H01L27/108 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

    Abstract: To provide a semiconductor device with less variations in characteristics. The semiconductor device includes a first circuit region and a second circuit region over a substrate, where the first circuit region includes a plurality of first transistors and a first insulator over the plurality of first transistors; the second circuit region includes a plurality of second transistors and a second insulator over the plurality of second transistors; the second insulator includes an opening portion; the first transistors and the second transistors each include an oxide semiconductor; a third insulator is positioned over and in contact with the first insulator and the second insulator; the first insulator, the second insulator, and the third insulator inhibit oxygen diffusion; and the density of the plurality of first transistors arranged in the first circuit region is higher than the density of the plurality of second transistors arranged in the second circuit region.

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