公开(公告)号：US20160086792A1

公开(公告)日：2016-03-24

申请号：US14855648

申请日：2015-09-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa SHIMOMURA ,  Naoki OKUNO ,  Mitsuhiro ICHIJO ,  Noriyoshi SUZUKI ,  Tetsuhiro TANAKA ,  Sachiaki TEZUKA

IPC: H01L21/02 ,  H01L21/66

CPC classification number: H01L21/0234 ,  C23C14/08 ,  C23C14/5806 ,  C23C14/5826 ,  C23C14/5853 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L22/12

Abstract: A method for evaluating a semiconductor film of a semiconductor device which is configured to include an insulating film, the semiconductor film, and a conductive film and to have a region where the semiconductor film and the conductive film overlap with each other with the insulating film provided therebetween, includes a step of performing plasma treatment after formation of the insulating film, and a step of calculating a peak value of resistivity of a microwave in the semiconductor film by a microwave photoconductive decay method after the plasma treatment, so that the hydrogen concentration in the semiconductor film is estimated.

Abstract translation: 一种用于评估半导体器件的半导体膜的方法，其被配置为包括绝缘膜，半导体膜和导电膜，并且具有设置有绝缘膜的半导体膜和导电膜彼此重叠的区域 其间包括在形成绝缘膜之后进行等离子体处理的步骤，以及在等离子体处理之后通过微波光电导衰减法计算半导体膜中的微波的电阻率峰值的步骤，使得氢浓度 估计半导体膜。

公开(公告)号：US20150255534A1

公开(公告)日：2015-09-10

申请号：US14636477

申请日：2015-03-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yoshinori YAMADA ,  Yusuke NONAKA ,  Masashi OOTA ,  Yoichi KUROSAWA ,  Noritaka ISHIHARA ,  Takashi HAMADA ,  Mitsuhiro ICHIJO ,  Yuji EGI

IPC: H01L29/04 ,  H01L29/36 ,  H01L29/786

CPC classification number: H01L29/78693 ,  H01L27/1156 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A method for forming an oxide that can be used as a semiconductor of a transistor or the like is provided. In particular, a method for forming an oxide with fewer defects such as grain boundaries is provided. One embodiment of the present invention is a semiconductor device including an oxide semiconductor, an insulator, and a conductor. The oxide semiconductor includes a region overlapping with the conductor with the insulator therebetween. The oxide semiconductor includes a crystal grain with an equivalent circle diameter of 1 nm or more and a crystal grain with an equivalent circle diameter less than 1 nm.

Abstract translation: 提供了可以用作晶体管等的半导体的氧化物的形成方法。 特别地，提供了形成具有较少缺陷如晶界的氧化物的方法。 本发明的一个实施例是包括氧化物半导体，绝缘体和导体的半导体器件。 氧化物半导体包括与导体重叠的区域，其间具有绝缘体。 氧化物半导体包括当量圆直径为1nm以上的晶粒和等效圆直径小于1nm的晶粒。

公开(公告)号：US20140346489A1

公开(公告)日：2014-11-27

申请号：US14454092

申请日：2014-08-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi MURAKAMI ,  Mitsuhiro ICHIJO ,  Taketomi ASAMI

IPC: H01L27/32 ,  H01L51/52

CPC classification number: H01L27/3258 ,  H01L21/7684 ,  H01L21/76841 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L33/0041 ,  H01L51/5221 ,  H01L51/5253 ,  H01L2227/323 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.

Abstract translation: 在使用阴极中含有碱土类金属的材料的情况下，担心从EL元件向所产生的TFT扩散杂质离子（如碱土类金属离子）扩散至产生的TFT TFT的特性变化。 因此，作为设置在TFT和EL元件之间的绝缘膜，含有不仅阻挡诸如碱土金属离子等杂质离子扩散的材料的膜，而且还积极地吸收杂质离子如碱土金属 离子。

公开(公告)号：US20140332819A1

公开(公告)日：2014-11-13

申请号：US14446934

申请日：2014-07-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Motomu KURATA ,  Hiroyuki HATA ,  Mitsuhiro ICHIJO ,  Takashi OHTSUKI ,  Aya ANZAI ,  Masayuki SAKAKURA

IPC: H01L27/12 ,  H01L33/60

CPC classification number: H04N5/655 ,  G06F3/02 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3244 ,  H01L27/3258 ,  H01L27/3276 ,  H01L33/60 ,  H01L51/0005 ,  H01L51/5246 ,  H01L51/56 ,  H01L2224/4847 ,  H01L2227/323 ,  H01L2251/5323 ,  H04N5/642

Abstract: The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.

Abstract translation: 本发明提供了一种以高成本低成本制造高度可靠的显示装置的方法。 根据本发明，由绝缘层覆盖由于接触开口而产生的台阶，以减小台阶，并且被加工成平缓的形状。 布线等形成为与绝缘层接触，从而增强布线等的覆盖。 此外，通过用包封材料密封包括显示装置中具有透水性的有机材料的层，可以防止由诸如水等污染物引起的发光元件的劣化。 由于密封材料形成在显示装置的驱动电路区域的一部分中，所以显示装置的边框可以变窄。

公开(公告)号：US20250120126A1

公开(公告)日：2025-04-10

申请号：US18981827

申请日：2024-12-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tetsuhiro TANAKA ,  Mitsuhiro ICHIJO ,  Toshiya ENDO ,  Akihisa SHIMOMURA ,  Yuji EGI ,  Sachiaki TEZUKA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/49

Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.

公开(公告)号：US20170352746A1

公开(公告)日：2017-12-07

申请号：US15664106

申请日：2017-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Yuhei SATO ,  Tetsuhiro TANAKA ,  Masashi TSUBUKU ,  Toshihiko TAKEUCHI ,  Ryo TOKUMARU ,  Mitsuhiro ICHIJO ,  Satoshi TORIUMI ,  Takashi OHTSUKI ,  Toshiya ENDO

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. Oxygen is introduced into a surface of an insulating film, and then, an oxide semiconductor, a layer which is capable of blocking oxygen, a gate insulating film, and other films which composes a transistor are formed. For at least one of the first gate insulating film and the insulating film, three signals in Electron Spin Resonance Measurement are each observed in a certain range of g-factor. Reducing the sum of the spin densities of the signals will improve reliability of the semiconductor device.

公开(公告)号：US20160322503A1

公开(公告)日：2016-11-03

申请号：US15131298

申请日：2016-04-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Sachiaki TEZUKA ,  Tetsuhiro TANAKA ,  Toshiya ENDO ,  Mitsuhiro ICHIJO

IPC: H01L29/786 ,  H01L29/792 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L21/8258 ,  H01L27/0688 ,  H01L27/10805 ,  H01L27/10873 ,  H01L27/1156 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/127 ,  H01L29/66969 ,  H01L29/7855 ,  H01L29/78603 ,  H01L29/78648

Abstract: A semiconductor device includes a semiconductor, a first conductor, a second conductor, a third conductor, a fourth conductor, a first insulator, a second insulator, a third insulator, and a fourth insulator. The first conductor and the semiconductor partly overlap with each other with the first insulator positioned therebetween. The second conductor and the third conductor have regions in contact with the semiconductor. The semiconductor has a region in contact with the second insulator. The fourth insulator has a first region and a second region. The first region is thicker than the second region. The first region has a region in contact with the second insulator. The second region has a region in contact with the third insulator. The fourth conductor and the second insulator partly overlap with each other with the fourth insulator positioned therebetween.

Abstract translation: 半导体器件包括半导体，第一导体，第二导​​体，第三导体，第四导体，第一绝缘体，第二绝缘体，第三绝缘体和第四绝缘体。 第一导体和半导体部分地彼此重叠，第一绝缘体位于它们之间。 第二导体和第三导体具有与半导体接触的区域。 半导体具有与第二绝缘体接触的区域。 第四绝缘体具有第一区域和第二区域。 第一区域比第二区域厚。 第一区域具有与第二绝缘体接触的区域。 第二区域具有与第三绝缘体接触的区域。 第四导体和第二绝缘体彼此部分重叠，第四绝缘体位于它们之间。

公开(公告)号：US20160308060A1

公开(公告)日：2016-10-20

申请号：US15092956

申请日：2016-04-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro TANAKA ,  Mitsuhiro ICHIJO ,  Toshiya ENDO ,  Akihisa SHIMOMURA ,  Yuji EGI ,  Sachiaki TEZUKA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/78648

Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.

Abstract translation: 具有稳定电特性的晶体管。 半导体器件包括衬底上的第一绝缘体，第一绝缘体上的第二绝缘体，与第二绝缘体的顶表面的至少一部分接触的氧化物半导体，与第一绝缘体的至少一部分接触的第三绝缘体 所述氧化物半导体的第一导体和与所述氧化物半导体电连接的第二导体，在所述第三绝缘体上的第四绝缘体，位于所述第四绝缘体之上的第三导体，并且其中至少一部分位于所述第一导体与所述第二绝缘体之间 导体和第三导体上的第五绝缘体。 第一绝缘体包含卤素元素。

公开(公告)号：US20160293684A1

公开(公告)日：2016-10-06

申请号：US15177470

申请日：2016-06-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi MURAKAMI ,  Mitsuhiro ICHIJO ,  Taketomi ASAMI

IPC: H01L27/32

CPC classification number: H01L27/3258 ,  H01L21/7684 ,  H01L21/76841 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L33/0041 ,  H01L51/5221 ,  H01L51/5253 ,  H01L2227/323 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.

公开(公告)号：US20160225909A1

公开(公告)日：2016-08-04

申请号：US15096632

申请日：2016-04-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitsuhiro ICHIJO ,  Toshiya ENDO ,  Kunihiko SUZUKI

IPC: H01L29/786 ,  H01L29/24 ,  H01L21/477 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/441 ,  H01L21/477 ,  H01L29/247 ,  H01L29/42384 ,  H01L29/47 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

Abstract: An object is to provide a semiconductor device having good electrical characteristics. A gate insulating layer having a hydrogen concentration less than 6×1020 atoms/cm3 and a fluorine concentration greater than or equal to 1×1020 atoms/cm3 is used as a gate insulating layer in contact with an oxide semiconductor layer forming a channel region, so that the amount of hydrogen released from the gate insulating layer can be reduced and diffusion of hydrogen into the oxide semiconductor layer can be prevented. Further, hydrogen present in the oxide semiconductor layer can be eliminated with the use of fluorine; thus, the hydrogen content in the oxide semiconductor layer can be reduced. Consequently, the semiconductor device having good electrical characteristics can be provided.