公开(公告)号：US20200321454A1

公开(公告)日：2020-10-08

申请号：US16904836

申请日：2020-06-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu HOSAKA ,  Takahiro IGUCHI ,  Masami JINTYOU ,  Takashi HAMOCHI ,  Junichi KOEZUKA

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/4757 ,  H01L21/4763 ,  H01L21/385 ,  H01L21/02

Abstract: To provide a semiconductor device with favorable electrical characteristics. To provide a method for manufacturing a semiconductor device with high productivity. To reduce the temperatures in a manufacturing process of a semiconductor device. An island-like oxide semiconductor layer is formed over a first insulating film; a second insulating film and a first conductive film are formed in this order, covering the oxide semiconductor layer; oxygen is supplied to the second insulating film through the first conductive film; a metal oxide film is formed over the second insulating film in an atmosphere containing oxygen; a first gate electrode is formed by processing the metal oxide film; a third insulating film is formed, covering the first gate electrode and the second insulating film; and first heat treatment is performed. The second insulating film and the third insulating film each include oxide. The highest temperature in the above steps is 340° C. or lower.

公开(公告)号：US20200321280A1

公开(公告)日：2020-10-08

申请号：US16957159

申请日：2018-12-19

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Toshimitsu OBONAI ,  Masami JINTYOU ,  Daisuke KUROSAKI

IPC: H01L23/532 ,  H01L21/265 ,  H01L21/02 ,  H01L21/263

Abstract: A semiconductor device having favorable electrical characteristics is provided. A semiconductor device having stable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, and a first conductive layer. The semiconductor layer includes an island-shaped top surface. The first insulating layer is provided in contact with a top surface and a side surface of the semiconductor layer. The first conductive layer is positioned over the first insulating layer and includes a portion overlapping with the semiconductor layer. In addition, the semiconductor layer includes a metal oxide, and the first insulating layer includes an oxide. The semiconductor layer includes a first region overlapping with the first conductive layer and a second region not overlapping with the first conductive layer. The first insulating layer includes a third region overlapping with the first conductive layer and a fourth region not overlapping with the first conductive layer. Furthermore, the second region and the fourth region contain phosphorus or boron.

公开(公告)号：US20190355764A1

公开(公告)日：2019-11-21

申请号：US16522912

申请日：2019-07-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Masataka NAKADA ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786

Abstract: A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.

公开(公告)号：US20180331228A1

公开(公告)日：2018-11-15

申请号：US15775960

申请日：2016-11-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiaki OIKAWA ,  Nobuharu OHSAWA ,  Masami JINTYOU ,  Yasutaka NAKAZAWA

IPC: H01L29/786 ,  H01L29/04 ,  H01L27/12 ,  H01L29/45

Abstract: A change in electrical characteristics of a transistor including an oxide semiconductor film is suppressed.The transistor includes a first gate electrode, a first insulating film over the first gate electrode, an oxide semiconductor film over the first insulating film, a source electrode over the oxide semiconductor film, a drain electrode over the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, and a second gate electrode over the second insulating film; the first insulating film includes a first opening; a connection electrode electrically connected to the first gate electrode through the first opening is formed over the first insulating film; the second insulating film includes a second opening that reaches the connection electrode; the second gate electrode includes an oxide conductive film and a metal film over the oxide conductive film; and the connection electrode and the second gate electrode are electrically connected to each other through the metal film.

公开(公告)号：US20180083048A1

公开(公告)日：2018-03-22

申请号：US15819201

申请日：2017-11-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Daisuke KUROSAKI ,  Masami JINTYOU ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/1225 ,  H01L27/1248 ,  H01L27/127 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A method for manufacturing a highly reliable semiconductor device is provided. The method includes the steps of: forming an oxide semiconductor film at a first temperature; processing the oxide semiconductor film into an island shape; not performing a process at a temperature higher than the first temperature, but depositing a material to be source and drain electrodes by a sputtering method; processing the material to form the source and drain electrodes; forming a protective insulating film, and then forming a first barrier film; adding excess oxygen or oxygen radicals to the protective insulating film through the first barrier film; performing heat treatment at a second temperature lower than 400° C. to diffuse the excess oxygen or oxygen radicals into the oxide semiconductor film; and removing part of the first barrier film and part of the protective insulating film by wet etching, and then forming a second barrier film.

公开(公告)号：US20170186843A1

公开(公告)日：2017-06-29

申请号：US15391186

申请日：2016-12-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Toshimitsu OBONAI ,  Yukinori SHIMA ,  Masami JINTYOU ,  Daisuke KUROSAKI ,  Takashi HAMOCHI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: H01L29/24 ,  C04B35/453 ,  C04B35/622 ,  H01L29/786

CPC classification number: H01L29/24 ,  C03C17/245 ,  C03C2217/23 ,  C03C2218/151 ,  C04B35/01 ,  C04B35/453 ,  C04B35/62218 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/787 ,  C04B2235/96 ,  C23C14/08 ,  C23C14/5853 ,  H01L27/1225 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

公开(公告)号：US20170141234A1

公开(公告)日：2017-05-18

申请号：US15421657

申请日：2017-02-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Daisuke KUROSAKI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/51 ,  H01L29/24 ,  H01L29/49

Abstract: A change in electrical characteristics is inhibited and reliability is improved in a semiconductor device using a transistor including an oxide semiconductor. One embodiment of a semiconductor device including a transistor includes a gate electrode, first and second insulating films over the gate electrode, an oxide semiconductor film over the second insulating film, and source and drain electrodes electrically connected to the oxide semiconductor film. A third insulating film is provided over the transistor and a fourth insulating film is provided over the third insulating film. The third insulating film includes oxygen. The fourth insulating film includes nitrogen. The amount of oxygen released from the third insulating film is 1×1019/cm3 or more by thermal desorption spectroscopy, which is estimated as oxygen molecules. The amount of oxygen molecules released from the fourth insulating film is less than 1×1019/cm3.

公开(公告)号：US20170047354A1

公开(公告)日：2017-02-16

申请号：US15335510

申请日：2016-10-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiroyuki MIYAKE ,  Takahiro SATO ,  Masami JINTYOU

IPC: H01L27/12 ,  G06F3/041 ,  H01L29/423 ,  H01L29/786 ,  H01L29/417 ,  H01L29/49

CPC classification number: H01L27/1225 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/134336 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2201/123 ,  G06F3/041 ,  G06F2203/04103 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/7869

Abstract: A semiconductor device including a transistor and a connection portion is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film and at a position overlapping with the gate electrode, and source and drain electrodes electrically connected to the oxide semiconductor film; and the connection portion includes a first wiring on the same surface as a surface on which the gate electrode is formed, a second wiring on the same surface as a surface on which the source and drain electrodes are formed, and a third wiring connecting the first wiring and the second wiring. The distance between an upper end portion and a lower end portion of the second wiring is longer than the distance between an upper end portion and a lower end portion of each of the source and drain electrodes.

Abstract translation: 提供了包括晶体管和连接部分的半导体器件。 晶体管包括栅电极，栅电极上的第一绝缘膜，第一绝缘膜上的氧化物半导体膜和与栅电极重叠的位置，电连接到氧化物半导体膜的源极和漏极; 连接部包括与形成有栅电极的表面相同的表面上的第一布线，与形成有源极和漏极的表面相同的表面上的第二布线，以及连接第一布线的第一布线 接线和第二个接线。 第二配线的上端部和下端部之间的距离比源电极和漏电极的上端部与下端部的距离长。

公开(公告)号：US20170033233A1

公开(公告)日：2017-02-02

申请号：US15219396

申请日：2016-07-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Masami JINTYOU ,  Takahiro IGUCHI ,  Naoto GOTO

IPC: H01L29/786 ,  H01L29/04 ,  H01L27/12 ,  G06F3/041 ,  H01L27/105 ,  H01L27/146 ,  C23C16/455 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/78606 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3414 ,  G06F1/1643 ,  G06F1/169 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04102 ,  G06F2203/04103 ,  H01L27/1052 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/14616 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a gate electrode over the second insulating film; a metal oxide film in contact with a side surface of the second insulating film; and a third insulating film over the oxide semiconductor film, the gate electrode, and the metal oxide film. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.

Abstract translation: 在包括氧化物半导体的晶体管中，抑制了电特性的变化，提高了可靠性。 晶体管包括在第一绝缘膜上的氧化物半导体膜; 氧化物半导体膜上的第二绝缘膜; 第二绝缘膜上的栅电极; 与所述第二绝缘膜的侧面接触的金属氧化物膜; 以及氧化物半导体膜上的第三绝缘膜，栅电极和金属氧化物膜。 氧化物半导体膜包括与栅电极重叠的沟道区域，与第三绝缘膜接触的源极区域和与第三绝缘膜接触的漏极区域。 源区和漏区含有氢，硼，碳，氮，氟，磷，硫，氯，钛和稀有气体中的一种或多种。

公开(公告)号：US20160225796A1

公开(公告)日：2016-08-04

申请号：US15075765

申请日：2016-03-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiroyuki MIYAKE ,  Takahiro SATO ,  Masami JINTYOU

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/134336 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2201/123 ,  G06F3/041 ,  G06F2203/04103 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/7869

Abstract: A semiconductor device including a transistor and a connection portion is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film and at a position overlapping with the gate electrode, and source and drain electrodes electrically connected to the oxide semiconductor film; and the connection portion includes a first wiring on the same surface as a surface on which the gate electrode is formed, a second wiring on the same surface as a surface on which the source and drain electrodes are formed, and a third wiring connecting the first wiring and the second wiring. The distance between an upper end portion and a lower end portion of the second wiring is longer than the distance between an upper end portion and a lower end portion of each of the source and drain electrodes.