Abstract:
Wafer support shelves (10, 10) are each provided with wafer support projections (A, B1, B2) on which parts of the outer margins of a semiconductor wafer (W) are to be placed. In each case, one of the support projections (A, B1, B2) is provided on the far side of the center position of the semiconductor wafer (W), and two of the support projections are provided on the near side of the center of the semiconductor wafer. By means of this structure, in a state in which a lid body (3) is not attached to a wafer extraction/insertion opening (2), the flexure amount of the semiconductor wafers placed on the support projections of multiple locations in the wafer support shelves can be reduced with a minimal number of projections, so that a hindrance is not created to an operation such as extraction by a robot arm.
Abstract:
[OBJECT] In an SOFC cell comprising a Cr-containing alloy or the like and an air electrode bonded together, the invention is to provide a cell capable of effectively restricting occurrence of Cr poisoning of the air electrode and capable also of effectively restricting occurrence of oxidation deterioration due to Cr depletion in the alloy or the like.[SOLUTION] In a cell for a solid oxide fuel cell (SOFC) comprising a Cr (chrome)-containing alloy or oxide and an air electrode bonded together, wherein on the surface of the alloy or oxide, there is formed a coating layer containing a spinel oxide comprised of a first mono metal oxide and a second mono metal oxide, the first mono metal oxide having an equilibrium dissociated oxygen partial pressure at 750° C. ranging from 1.83×10−20 to 3.44×10−13 atm., the second mono metal oxide having a lower equilibrium dissociated oxygen partial pressure at 750° C. than the first mono metal oxide.
Abstract:
There is provided an SOFC cell and manufacturing method thereof whereby the occurrence of Cr poisoning of the air electrode can be satisfactorily suppressed in an SOFC cell formed by joining together an air electrode with a Cr-containing alloy or the like. A Cr(VI) oxide suppressing state is induced for suppressing the formation of Cr(VI) oxides in an alloy or oxide during a firing process in which an alloy or oxide and an air electrode are fired in a state of being joined together.
Abstract:
A high-speed transmission connecting sheet 10 includes a first elastomer connector 1E formed on a top sheet 1, a second elastomer connector 2E formed on a bottom sheet 2, third elastomer connectors 3E formed on high-speed transmission boards 31 through 33, and fourth elastomer connectors 4E formed on intermediate layer boards 41 and 42. These elastomer connectors provide three-dimensional connection between the multiple high-speed transmission paths 3C formed on the high-speed transmission boards 31 through 33. A plug housing 5 has the high-speed transmission connecting sheet 10 installed therewithin, with the first elastomer connector 1E disposed at one inner wall of opposing inner walls, and the second elastomer connector 2E disposed at the other inner wall of the opposing inner walls. Receptacle pins 1P are disposed on the first elastomer connector 1E, and plug pins 2P are disposed under the second elastomer connector 2E. Both ends of the high-speed transmission connecting sheet 10 are pressed into contact, whereby the receptacle pins 1P and the plug pins 2P are connected through the multiple high-speed transmission paths 3C.
Abstract:
The disclosure relates to a graft polymerization method to form a fluorine-containing graft copolymer which is useful as a soft and flexible fluororesin intermediate between fluororubbers and crystalline fluororesins. The graft copolymer is formed by polymerizing a fluorine-containing crystalline polymer, e.g. copolymer of CTFE and ethylene, in water in the presence of a reducing agent and a fluorine-containing elastomeric copolymer which comprises peroxy groups and is dispersed in the water to become the "trunk" of the graft copolymer. For example, the elastomeric copolymer is of vinylidene fluoride, CTFE and t-butyl peroxyallylcarbonate. An example of the reducing agent is sodium bisulfite, and optionally and additionally a source of a reducing metal ion such as ferric chloride may be used. This graft polymerization reaction can be carried out at a relatively low temperature, viz. at 20.degree.-50.degree. C., and the grafted crystalline polymer becomes sufficiently high in the degree of polymerization and in crystallinity.
Abstract:
A piezoelectric polymeric material in the form of sheet or film, which comprises polymers of vinylidene fluoride (VDF) as principle components. The piezoelectric material is essentially a mixture of 100 parts by weight of a VDF base resin, which may be either poly(VDF) or a copolymer, and 1-100 parts by weight of a copolymer of a fluoroelastomer and either VDF monomer or a monomer mixture containing a major amount of VDF monomer. A sheet or film having a high piezoelectric modulus is obtained by stretching a sheet or film of said mixture at an adequately elevated temperature and polarizing the sheet or film after or during the stretching thereby making the stretching sheet or film an electret.
Abstract:
A substrate storing container includes: a container body for storing semiconductor wafers; a door that is fitted to the front of the container body; and a locking mechanism locking the door. The locking mechanism includes: a rotary driver that is supported by the door and operated from a cover plate side; and a locking bar that vertically slides as the rotary driver rotates to bring the distal end into, and out of, a locking hollow of the container body. The rotary driver is separated into first and second rotary drivers. The first and second rotary drivers are formed with first and second cam portions, respectively. The first and second cam portions are made to support the proximal end of the locking bar therebetween so that the locking bar can sway in the thickness direction of the door.
Abstract:
When a lid (20) is attached to a substrate removal/insertion opening (2) in a container body (1), a placement piece forcible displacement means (22) forcibly moves a substrate placement piece (4), which is provided in a region in the vicinity of the substrate removal/insertion opening (2), to a displacement position which does not overlap with a disc-shaped substrate (W). Thus, even if the disc-shaped substrate (W) is increased in diameter, there is no risk of the stored disc-shaped substrate (W) coming into contact with the substrate placement piece (4) due to factors such as vibration or impact, thus the disc-shaped substrate (W) can be stored more safely.
Abstract:
There is provided an SOFC cell and manufacturing method thereof whereby the occurrence of Cr poisoning of the air electrode can be satisfactorily suppressed in an SOFC cell formed by joining together an air electrode with a Cr-containing alloy or the like. A Cr(VI) oxide suppressing state is induced for suppressing the formation of Cr(VI) oxides in an alloy or oxide during a firing process in which an alloy or oxide and an air electrode are fired in a state of being joined together.
Abstract:
A second anisotropic electroconductive sheet 1 has a structure in which third elastomer regions 1B, each of which is electroconductive so as to enable current to flow between the front and the back thereof, are formed on an insulating second elastomer sheet 1A. An anisotropic electroconductive sheet 2 has a structure in which first elastomer regions 2B and second elastomer regions 3B, each of which is electroconductive so as to enable current to flow between the front and the back thereof, are formed on an insulating elastomer sheet 2A. The first elastomer regions 2B are arranged so as to match up with the third elastomer regions 1B. Furthermore, wiring patterns 2C are formed on the elastomer sheet 2A for connecting the first elastomer regions 2B and the second elastomer regions 3B. The second anisotropic electroconductive sheet 1 and the anisotropic electroconductive sheet 2 are layered one upon the other such that the third elastomer regions 1B and the first elastomer regions 2B are in contact with each other.