摘要:
A piezoelectric polymeric material in the form of sheet or film, which comprises polymers of vinylidene fluoride (VDF) as principle components. The piezoelectric material is essentially a mixture of 100 parts by weight of a VDF base resin, which may be either poly(VDF) or a copolymer, and 1-100 parts by weight of a copolymer of a fluoroelastomer and either VDF monomer or a monomer mixture containing a major amount of VDF monomer. A sheet or film having a high piezoelectric modulus is obtained by stretching a sheet or film of said mixture at an adequately elevated temperature and polarizing the sheet or film after or during the stretching thereby making the stretching sheet or film an electret.
摘要:
According to one embodiment, a memory device includes a selection element layer, a nanomaterial aggregate layer, and a fine particle. The nanomaterial aggregate layer is stacked on the selection element layer. The nanomaterial aggregate layer has a plurality of micro conductive bodies aggregated with an interposed gap. The fine particle has at least a surface made of silicon oxynitride. The fine particle is dispersed between the micro conductive bodies in one portion of the nanomaterial aggregate layer piercing the nanomaterial aggregate layer in a thickness direction.
摘要:
According to one embodiment, a nonvolatile semiconductor memory device includes a first interconnect, a second interconnect and a resistance change layer. The first interconnect extends in a first direction on a major surface of a substrate. The second interconnect extends in a second direction non-parallel to the first direction. The resistance change layer includes a conductive nanomaterial, the resistance change layer located between the first interconnect and the second interconnect and being capable of reversibly changing between a first resistance state and a second resistance state by a voltage applied or a current supplied through the first interconnect and the second interconnect. The resistance change layer has a density varied along a third direction generally perpendicular to the first direction and the second direction.
摘要:
According to one embodiment, a memory device includes a lower electrode layer, a nanomaterial assembly layer, a protective layer and an upper electrode layer. The nanomaterial assembly layer is provided on the lower electrode layer and includes a plurality of fine conductors assembled via a gap. The protective layer is provided on the nanomaterial assembly layer, is conductive, is in contact with the fine conductors, and includes an opening. The upper electrode layer is provided on the protective layer and is in contact with the protective layer.
摘要:
According to one embodiment, a memory device includes a nanomaterial aggregate layer of a plurality of fine conductors aggregating via gaps and an insulating material disposed in the gaps.
摘要:
According to one embodiment, a nonvolatile memory device includes a selection element layer and a nanomaterial aggregate layer. The selection element layer includes silicon. The nanomaterial aggregate layer is stacked on the selection element layer. The nanomaterial aggregate layer includes a plurality of micro conductive bodies and fine particles dispersed in a plurality of gaps between the micro conductive bodies. At least a surface of the fine particle is made of an insulating material other than silicon oxide.
摘要:
According to one embodiment, a nonvolatile memory device includes a memory cell connected to a first interconnect and a second interconnect. The memory cell includes a plurality of layers. The plurality of layers includes a carbon-containing memory layer sandwiched between a first electrode film and a second electrode film and a carbon-containing barrier layer provided at least one of between the first electrode film and the memory layer and between the second electrode film and the memory layer. The barrier layer has lower electrical resistivity than the memory layer.
摘要:
The present invention relates to an inkjet recording sheet for forming an image using aqueous pigment ink comprising: a substrate; and an ink-receiving layer formed on the substrate, wherein the ink-receiving layer is obtained by applying, on the substrate, a coating composition containing: a cationic acrylic silicone emulsion-based resin having a hydrolyzable silyl group as a crosslinking component; a cationic polyether-based urethane resin; and a carbodiimide group-containing resin, followed by curing the applied coating composition, and wherein, in the coating composition, the content of the cationic acrylic silicone emulsion-based resin is 2 to 7% by mass, the content of the cationic polyether-based urethane resin is 88 to 94% by mass, and the content of the carbodiimide group-containing resin is 2 to 6% by mass in terms of solid matter.
摘要:
One inventive aspect relates to a method for fabricating a high-k dielectric layer. The method comprises depositing onto a substrate a layer of a high-k dielectric material having a first thickness. The high-k dielectric material has a bulk density value and the first thickness is so that the high-k dielectric layer has a density of at least the bulk density value of the high-k dielectric material minus about 10%. The method further comprises thinning the high-k dielectric layer to a second thickness. Another inventive aspect relates to a semiconductor device comprising a high-k dielectric layer as fabricated by the method.
摘要:
A mobile unit moves on a reference plane. The mobile unit has an object detection apparatus for detecting an object on the reference plane. The object detection apparatus includes a camera, a mirror, and a computer. The mirror cuts an image received by the camera such that the camera receives an image that is divided into a reference plane image and an object image. The reference plane image contains the reference plane. The object image contains the object and does not contain the reference plane. Therefore, the distance measuring apparatus can easily separate the region including the object and the region including no object, and accurately detect the distance to the object.