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公开(公告)号：US4936251A
公开(公告)日：1990-06-26
申请号：US725596
申请日：1985-04-22
IPC分类号： C23C16/458 , C23C16/54
CPC分类号： C23C16/4587 , C23C16/54
摘要： A vapor phase reaction apparatus includes a reaction chamber defined by first and second walls fixed opposite each other. Third and fourth walls are introduced into the reaction chamber already having affixed to them a substrate for deposition. A reactive gas is introduced into the reaction chamber for chemical vapor deposition onto the substrate.
摘要翻译： 气相反应装置包括由彼此相对固定的第一和第二壁限定的反应室。 将第三和第四壁引入反应室中，已经固定在其上用于沉积的基底。 反应气体被引入到反应室中用于化学气相沉积到基底上。
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12.发明授权
公开(公告)号：US5866932A
公开(公告)日：1999-02-02
申请号：US734127
申请日：1996-10-21
IPC分类号： H01L21/316 , H01L27/01 , H01L29/76 , H01L29/94 , H01L31/062
CPC分类号： H01L21/02131 , H01L21/02126 , H01L21/02205 , H01L21/02216 , H01L21/02274 , H01L21/31612 , H01L21/31629
摘要： A silicon oxide film is formed to cover an island non-monocrystalline silicon region by plasma CVD using an organic silane having ethoxy groups (e.g., TEOS) and oxygen as raw materials, while hydrogen chloride or a chlorine-containing hydrocarbon (e.g., trichloroethylene) of a fluorine-containing gas is added to the plasma CVD atmosphere, preferably in an amount of from 0.01 to 1 mol % of the atmosphere so as to reduce the alkali elements from the silicon oxide film formed and to improve the reliability of the film. Prior to forming the silicon oxide film, the silicon region may be treated in a plasma atmosphere containing oxygen and hydrogen chloride or a chlorine-containing hydrocarbon. The silicon oxide film is obtained at low temperatures and this has high reliability usable as a gate-insulating film in a semiconductor device.
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公开(公告)号：US5837614A
公开(公告)日：1998-11-17
申请号：US781930
申请日：1997-01-07
IPC分类号： H01L21/316 , H01L21/31
CPC分类号： H01L21/02131 , H01L21/02126 , H01L21/02205 , H01L21/02216 , H01L21/02274 , H01L21/31612 , H01L21/31629
摘要： A silicon oxide film is formed to cover an island non-monocrystalline silicon region by plasma CVD using an organic silane having ethoxy groups (e.g., TEOS) and oxygen as raw materials, while hydrogen chloride or a chlorine-containing hydrocarbon (e.g., trichloroethylene) of a fluorine-containing gas is added to the plasma CVD atmosphere, preferably in an amount of from 0.01 to 1 mol % of the atmosphere so as to reduce the alkali elements from the silicon oxide film formed and to improve the reliability of the film. Prior to forming the silicon oxide film, the silicon region may be treated in a plasma atmosphere containing oxygen and hydrogen chloride or a chlorine-containing hydrocarbon. The silicon oxide film is obtained at low temperatures and this has high reliability usable as a gate-insulating film in a semiconductor device.
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公开(公告)号：US07393723B2
公开(公告)日：2008-07-01
申请号：US10793909
申请日：2004-03-08
IPC分类号： H01L21/00
CPC分类号： H01L29/66757 , H01L29/78612 , Y10S438/974
摘要： A method of manufacturing a semiconductor device that forms laminate layers includes the steps of reducing contamination containing the single bond of carbon on at least one part of a surface on which the laminate films are formed by activated hydrogen before the laminate films are formed, and forming the laminate films on the surface on which the laminate films are formed.
摘要翻译： 一种形成层叠层的半导体器件的制造方法包括以下步骤：在层压膜形成之前，通过活性氢在其上形成层压膜的表面的至少一部分上减少含有单键碳的污染物，并形成 在其上形成层压膜的表面上的层压膜。
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公开(公告)号：US06703264B2
公开(公告)日：2004-03-09
申请号：US09852063
申请日：2001-05-08
IPC分类号： H01L2100
CPC分类号： H01L29/66757 , H01L29/78612 , Y10S438/974
摘要： A method of manufacturing a semiconductor device that forms laminate layers includes the steps of reducing contamination containing the single bond of carbon on at least one part of a surface on which the laminate films are formed by activated hydrogen before the laminate films are formed, and forming the laminate films on the surface on which the laminate films are formed.
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16.发明授权Method for making a high contrast liquid crystal display including laser scribing opaque and transparent conductive strips simultaneously 失效用于制造高对比度液晶显示器的方法，包括同时激光划刻不透明和透明导电条
公开(公告)号：US5187601A
公开(公告)日：1993-02-16
申请号：US807748
申请日：1991-12-17
申请人： Shunpei Yamazaki , Takeshi Fukada , Mitsunori Sakama , Nobumitsu Amachi , Naoya Sakamoto , Mitsufumi Codama , Takashi Fuki , Ichiro Takayama
发明人： Shunpei Yamazaki , Takeshi Fukada , Mitsunori Sakama , Nobumitsu Amachi , Naoya Sakamoto , Mitsufumi Codama , Takashi Fuki , Ichiro Takayama
IPC分类号： G02F1/1335 , G02F1/1343
CPC分类号： G02F1/134336 , G02F1/133512
摘要： A method for forming a resistance-reducing electrode pattern in an electrooptical device includes the steps of: forming a transparent conductive film on a substrate; forming a plurality of opaque conductive strips on the film; and scribing the combined structure with a laser through the two layers to simultaneously divide the conductive strips into two parts and pattern the transparent film. In this manner, a pattern of transparent electrodes bordered with an opaque electrode pattern is formed. In specific embodiments, the opaque strips may comprise chromium, and the opaque conductive strips may be formed prior to application of the steps above by laser scribing an applied opaque film layer.
摘要翻译： 在电光装置中形成电阻减少电极图案的方法包括以下步骤：在衬底上形成透明导电膜; 在所述膜上形成多个不透明导电条; 并通过两层用激光刻划组合结构，同时将导电条分成两部分，并对透明膜进行图案化。 以这种方式，形成与不透明电极图案相邻的透明电极的图案。 在具体实施例中，不透明条可以包括铬，并且不透明导电条可以在施加上述步骤之前通过激光划刻施加的不透明膜层而形成。
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公开(公告)号：US5091638A
公开(公告)日：1992-02-25
申请号：US554342
申请日：1990-07-19
申请人： Shunpei Yamazaki , Takeshi Fukada , Mitsunori Sakama , Hisato Shinohara , Nobumitsu Amachi , Naoya Sakamoto , Takashi Inuzima
发明人： Shunpei Yamazaki , Takeshi Fukada , Mitsunori Sakama , Hisato Shinohara , Nobumitsu Amachi , Naoya Sakamoto , Takashi Inuzima
IPC分类号： H01L27/146 , H04N1/031
CPC分类号： H04N1/0316 , H01L27/14623 , H01L27/14665 , H04N1/0313
摘要： An improved image sensor is described. The sensor includes a photosensitive semiconductor device comprises a glass substrate, a light blocking electrode formed on the glass substrate, a photosensitive semiconductor film formed on the electrode, a transparent electrode. A light window is opened through the semiconductor device. On the light path including the light window, an uneven interface is formed in order that light rays incident on the sensor is modified and reachs the photosensitive semiconductor after reflection on an original.
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公开(公告)号：US07465679B1
公开(公告)日：2008-12-16
申请号：US09466828
申请日：1999-12-20
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02126 , H01L21/02131 , H01L21/02216 , H01L21/02274 , H01L21/02315 , H01L21/02337 , H01L21/31612 , H01L21/31629
摘要： A silicon oxide film is formed to cover an island non-monocrystalline silicon region by plasma CVD using an organic silane having ethoxy groups (e.g., TEOS) and oxygen as raw materials, while hydrogen chloride or a chlorine-containing hydrocarbon (e.g., trichloroethylene) of a fluorine-containing gas is added to the plasma CVD atmosphere, preferably in an amount of from 0.01 to 1 mol % of the atmosphere so as to reduce the alkali elements from the silicon oxide film formed and to improve the reliability of the film. Prior to forming the silicon oxide film, the silicon region may be treated in a plasma atmosphere containing oxygen and hydrogen chloride or a chlorine-containing hydrocarbon. The silicon oxide film is obtained at low temperatures and this has high reliability usable as a gate-insulating film in a semiconductor device.
摘要翻译： 通过使用具有乙氧基（例如TEOS）和氧作为原料的有机硅烷通过等离子体CVD覆盖岛状非单晶硅区域，同时使用氯化氢或含氯烃（例如三氯乙烯） 的含氟气体添加到等离子体CVD气氛中，优选为0.01〜1摩尔％的气氛，以减少形成的氧化硅膜的碱元素，提高膜的可靠性。 在形成氧化硅膜之前，可以在含有氧和氯化氢或含氯烃的等离子体气氛中处理硅区域。 在低温下得到氧化硅膜，在半导体器件中作为栅极绝缘膜具有高的可靠性。
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19.发明授权APCVD method of forming silicon oxide using an organic silane, oxidizing agent, and catalyst-formed hydrogen radical 有权使用有机硅烷，氧化剂和催化剂形成的氢根形成氧化硅的APCVD方法公开(公告)号：US06706648B2
公开(公告)日：2004-03-16
申请号：US10037865
申请日：2001-10-24
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C03C17/245 , C03C2218/1525 , C03C2218/153 , C23C16/402 , H01L21/02131 , H01L21/0214 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/02274 , H01L21/31612
摘要： In forming various types of insulating films in manufacture of a semiconductor device, carbon is gasified into CHx, COH etc. during film formation by adding active hydrogen and nitrogen oxide to reduce the carbon content during the film formation, and the effect of blocking impurities such as alkali metals is improved.
摘要翻译： 在半导体器件的制造中形成各种类型的绝缘膜时，通过添加活性氢和氮氧化物在成膜期间将碳气化到CHx，COH等中以降低成膜期间的碳含量，以及将杂质 因为碱金属被改善。
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公开(公告)号：US06228751B1
公开(公告)日：2001-05-08
申请号：US08706667
申请日：1996-09-06
IPC分类号： H01L27108
CPC分类号： H01L29/66757 , H01L29/78612 , Y10S438/974
摘要： A method of manufacturing a semiconductor device that forms laminate layers includes the steps of reducing contamination containing the single bond of carbon on at least one part of a surface on which the laminate films are formed by activated hydrogen before the laminate films are formed, and forming the laminate films on the surface on which the laminate films are formed.
摘要翻译： 一种形成层叠层的半导体器件的制造方法包括以下步骤：在层压膜形成之前，通过活性氢在其上形成层压膜的表面的至少一部分上减少含有单键碳的污染物，并形成 在其上形成层压膜的表面上的层压膜。
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