公开(公告)号：US20120174945A1

公开(公告)日：2012-07-12

申请号：US13348268

申请日：2012-01-11

申请人： Takashi Saio ,  Soichi Kumon ,  Masanori Saito ,  Shinobu Arata ,  Hidehisa Nanai ,  Yoshinori Akamatsu

发明人： Takashi Saio ,  Soichi Kumon ,  Masanori Saito ,  Shinobu Arata ,  Hidehisa Nanai ,  Yoshinori Akamatsu

IPC分类号： B08B3/10 ,  C09D5/00

CPC分类号： H01L21/02068 ,  C11D11/0047

摘要： Disclosed is a liquid chemical for forming a water-repellent protecting film. The liquid chemical contains an agent for forming a water-repellent protecting film, and a solvent. The agent is for provided to form a water-repellent protecting film on a wafer after a cleaning step for the wafer and before a drying step for the wafer, the wafer having at its surface an uneven pattern and containing at least one kind element of titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium at surfaces of recessed portions of the uneven pattern, the water-repellent protecting film being formed at least on the surfaces of the recessed portions. The liquid chemical is characterized in that the agent for forming a water-repellent protecting film is a compound represented by the following general formula [1].

摘要翻译： 公开了一种用于形成防水保护膜的液体化学品。 液体化学品含有形成防水保护膜的试剂和溶剂。 该试剂用于在晶片的清洁步骤之后并且在用于晶片的干燥步骤之前在晶片上形成防水保护膜，所述晶片在其表面处具有不均匀图案并且包含至少一种钛元素 ，钨，铝，铜，锡，钽和钌在凹凸图案的凹部的表面处，至少在凹部的表面上形成防水保护膜。 液体化学品的特征在于用于形成防水保护膜的试剂是由以下通式[1]表示的化合物。

公开(公告)号：US08932390B2

公开(公告)日：2015-01-13

申请号：US13348268

申请日：2012-01-11

申请人： Takashi Saio ,  Soichi Kumon ,  Masanori Saito ,  Shinobu Arata ,  Hidehisa Nanai ,  Yoshinori Akamatsu

发明人： Takashi Saio ,  Soichi Kumon ,  Masanori Saito ,  Shinobu Arata ,  Hidehisa Nanai ,  Yoshinori Akamatsu

IPC分类号： C09K3/18 ,  H01L21/02

CPC分类号： H01L21/02068 ,  C11D11/0047

摘要： Disclosed is a liquid chemical for forming a water-repellent protecting film. The liquid chemical contains an agent for forming a water-repellent protecting film, and a solvent. The agent is for provided to form a water-repellent protecting film on a wafer after a cleaning step for the wafer and before a drying step for the wafer, the wafer having at its surface an uneven pattern and containing at least one kind element of titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium at surfaces of recessed portions of the uneven pattern, the water-repellent protecting film being formed at least on the surfaces of the recessed portions. The liquid chemical is characterized in that the agent for forming a water-repellent protecting film is a compound represented by the following general formula [1].

摘要翻译： 公开了一种用于形成防水保护膜的液体化学品。 液体化学品含有形成防水保护膜的试剂和溶剂。 该试剂用于在晶片的清洁步骤之后并且在用于晶片的干燥步骤之前在晶片上形成防水保护膜，所述晶片在其表面处具有不均匀图案并且包含至少一种钛元素 ，钨，铝，铜，锡，钽和钌在凹凸图案的凹部的表面处，至少在凹部的表面上形成防水保护膜。 液体化学品的特征在于用于形成防水保护膜的试剂是由以下通式[1]表示的化合物。

公开(公告)号：US08828144B2

公开(公告)日：2014-09-09

申请号：US13350007

申请日：2012-01-13

申请人： Soichi Kumon ,  Takashi Saio ,  Shinobu Arata ,  Masanori Saito ,  Hidehisa Nanai ,  Yoshinori Akamatsu

发明人： Soichi Kumon ,  Takashi Saio ,  Shinobu Arata ,  Masanori Saito ,  Hidehisa Nanai ,  Yoshinori Akamatsu

IPC分类号： H01L21/00 ,  H01L21/02

CPC分类号： H01L21/02057

摘要： A process for cleaning a wafer having an uneven pattern at its surface. The process includes at least the steps of: cleaning the wafer with a cleaning liquid; substituting the cleaning liquid retained in recessed portions of the wafer with a water-repellent liquid chemical after cleaning; and drying the wafer, wherein the cleaning liquid contains 80 mass % or greater of a solvent having a boiling point of 55 to 200° C., and wherein the water-repellent liquid chemical supplied in the substitution step has a temperature of not lower than 40° C. and lower than a boiling point of the water-repellent liquid chemical thereby imparting water repellency at least to surfaces of the recessed portions.

摘要翻译： 一种在其表面上清洁具有不均匀图案的晶片的方法。 该方法至少包括以下步骤：用清洗液清洗晶片; 在清洁后用拒水液体化学品代替保留在晶片的凹陷部分中的清洁液体; 干燥晶片，其中，所述清洗液含有80质量％以上的沸点为55〜200℃的溶剂，其中，所述取代工序中供给的所述憎水性液体化学物质的温度不低于 40℃以下，并且低于防水液体化学品的沸点，从而至少对凹部的表面赋予防水性。

公开(公告)号：US09691603B2

公开(公告)日：2017-06-27

申请号：US13698244

申请日：2011-05-11

申请人： Soichi Kumon ,  Takashi Saio ,  Shinobu Arata ,  Masanori Saito ,  Atsushi Ryokawa ,  Shuhei Yamada ,  Hidehisa Nanai ,  Yoshinori Akamatsu

发明人： Soichi Kumon ,  Takashi Saio ,  Shinobu Arata ,  Masanori Saito ,  Atsushi Ryokawa ,  Shuhei Yamada ,  Hidehisa Nanai ,  Yoshinori Akamatsu

IPC分类号： H01L21/302 ,  H01L21/02 ,  H01L21/3105 ,  C09D183/08

CPC分类号： H01L21/02057 ,  C09D183/08 ,  H01L21/0206 ,  H01L21/302 ,  H01L21/3105

摘要： Disclosed is a liquid chemical for forming a water repellent protective film on a wafer that has at its surface a finely uneven pattern and contains silicon element at least at a part of the uneven pattern, the water repellent protective film being formed at least on surfaces of recessed portions of the uneven pattern at the time of cleaning the wafer. The liquid chemical contains: a silicon compound (A) represented by the general formula R1aSi(H)b(X)4−a−b and an acid; or a silicon compound (C) represented by the general formula R7gSi(H)h(CH3)w(Z)4−g−h−w and a base that contains no more than 35 mass % of water. The total amount of water in the liquid chemical is no greater than 1000 mass ppm relative to the total amount of the liquid chemical. The liquid chemical can improve a cleaning step that easily induces pattern collapse.

公开(公告)号：US09228120B2

公开(公告)日：2016-01-05

申请号：US13253127

申请日：2011-10-05

申请人： Soichi Kumon ,  Takashi Saio ,  Shinobu Arata ,  Masanori Saito ,  Atsushi Ryokawa ,  Shuhei Yamada ,  Hidehisa Nanai ,  Yoshinori Akamatsu

发明人： Soichi Kumon ,  Takashi Saio ,  Shinobu Arata ,  Masanori Saito ,  Atsushi Ryokawa ,  Shuhei Yamada ,  Hidehisa Nanai ,  Yoshinori Akamatsu

IPC分类号： C09K3/18 ,  C11D1/82 ,  C11D3/16 ,  C11D11/00

CPC分类号： H01L21/02057 ,  B08B3/08 ,  B08B3/10 ,  C09K3/18 ,  C11D1/82 ,  C11D3/162 ,  C11D11/0047 ,  H01L21/02082

摘要： Disclosed is a liquid chemical for forming a water-repellent protecting film at least on a surface of a recessed portion of an uneven pattern at the time of cleaning a wafer having a finely uneven pattern at its surface and containing silicon at least a part of the uneven pattern. This liquid chemical contains a silicon compound A represented by the general formula: R1aSi(H)bX4-a-b and an acid A, the acid A being at least one selected from the group consisting of trimethylsilyl trifluoroactate, trimethylsilyl trifluoromethanesulfonate, dimethylsilyl trifluoroactate, dimethylsilyl trifluoromethanesulfonate, butyldimethylsilyl trifluoroactate, butyldimethylsilyl trifluoromethanesulfonate, hexyldimethylsilyl trifluoroacetate, hexyldimethylsilyl trifluoromethanesulfonate, octyldimethylsilyl trifluoroactate, octyldimethylsilyl trifluoromethanesulfonate, decyldimethylsilyl trifluoroacetate and decyldimethylsilyl trifluoromethanesulfonate.

摘要翻译： 公开了一种液体化学品，用于在清洁其表面上具有精细不均匀图案的晶片时至少在凹凸图案的凹部的表面上形成防水保护膜，并且含有硅的至少一部分 图案不均匀 该液体化学品含有由通式R1aSi（H）bX4-ab表示的硅化合物A和酸A，酸A为选自三甲基甲硅烷基三氟甲酸三甲基甲硅烷基酯，三氟甲磺酸三甲基甲硅烷基酯，三氟甲磺酸二甲基甲硅烷基酯，三氟甲磺酸二甲基甲硅烷基酯 丁基二甲基甲硅烷基三氟甲酸酯，丁基二甲基甲硅烷基三氟甲磺酸酯，己基二甲基甲硅烷基三氟乙酸酯，己基二甲基甲硅烷基三氟甲磺酸酯，辛基二甲基甲硅烷基三氟甲酸酯，辛基二甲基甲硅烷基三氟甲磺酸酯，癸基二甲基甲硅烷基三氟乙酸酯和癸基二甲基甲硅烷基三氟甲磺酸酯。

公开(公告)号：US20120017934A1

公开(公告)日：2012-01-26

申请号：US13253127

申请日：2011-10-05

申请人： Soichi KUMON ,  Takashi Saio ,  Shinobu Arata ,  Masanori Saito ,  Atsushi Ryokawa ,  Shuhei Yamada ,  Hidehisa Nanai ,  Yoshinori Akamatsu

发明人： Soichi KUMON ,  Takashi Saio ,  Shinobu Arata ,  Masanori Saito ,  Atsushi Ryokawa ,  Shuhei Yamada ,  Hidehisa Nanai ,  Yoshinori Akamatsu

IPC分类号： B08B7/00 ,  C09K3/18

CPC分类号： H01L21/02057 ,  B08B3/08 ,  B08B3/10 ,  C09K3/18 ,  C11D1/82 ,  C11D3/162 ,  C11D11/0047 ,  H01L21/02082

摘要： Disclosed is a liquid chemical for forming a water-repellent protecting film at least on a surface of a recessed portion of an uneven pattern at the time of cleaning a wafer having a finely uneven pattern at its surface and containing silicon at least a part of the uneven pattern. This liquid chemical contains a silicon compound A represented by the general formula: R1aSi(H)bX4-a-b and an acid A, the acid A being at least one selected from the group consisting of trimethylsilyl trifluoroactate, trimethylsilyl trifluoromethanesulfonate, dimethylsilyl trifluoroactate, dimethylsilyl trifluoromethanesulfonate, butyldimethylsilyl trifluoroactate, butyldimethylsilyl trifluoromethanesulfonate, hexyldimethylsilyl trifluoroacetate, hexyldimethylsilyl trifluoromethanesulfonate, octyldimethylsilyl trifluoroactate, octyldimethylsilyl trifluoromethanesulfonate, decyldimethylsilyl trifluoroacetate and decyldimethylsilyl trifluoromethanesulfonate.

摘要翻译： 公开了一种液体化学品，用于在清洁其表面上具有精细不均匀图案的晶片时至少在凹凸图案的凹部的表面上形成防水保护膜，并且含有硅的至少一部分 图案不均匀 该液体化学品含有由通式R1aSi（H）bX4-ab表示的硅化合物A和酸A，酸A为选自三甲基甲硅烷基三氟甲酸三甲基甲硅烷基酯，三氟甲磺酸三甲基甲硅烷基酯，三氟甲磺酸二甲基甲硅烷基酯，三氟甲磺酸二甲基甲硅烷基酯 丁基二甲基甲硅烷基三氟甲酸酯，丁基二甲基甲硅烷基三氟甲磺酸酯，己基二甲基甲硅烷基三氟乙酸酯，己基二甲基甲硅烷基三氟甲磺酸酯，辛基二甲基甲硅烷基三氟甲酸酯，辛基二甲基甲硅烷基三氟甲磺酸酯，癸基二甲基甲硅烷基三氟乙酸酯和癸基二甲基甲硅烷基三氟甲磺酸酯。

公开(公告)号：US09090782B2

公开(公告)日：2015-07-28

申请号：US13703593

申请日：2011-06-15

申请人： Takashi Saio ,  Soichi Kumon ,  Masanori Saito ,  Shinobu Arata ,  Hidehisa Nanai

发明人： Takashi Saio ,  Soichi Kumon ,  Masanori Saito ,  Shinobu Arata ,  Hidehisa Nanai

IPC分类号： C09D7/12 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  C07F7/10 ,  C07F7/12

CPC分类号： C09D7/1233 ,  C07F7/10 ,  C07F7/12 ,  C09D7/63 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/306 ,  H01L21/3105

摘要： The present invention relates to a method for cleaning wafers while preventing pattern collapse of the wafers in semiconductor device fabrication, the wafer having at its surface an uneven pattern and containing silicon element at least on surfaces of recessed portions. Provided is: a liquid chemical for forming a protective film which allows efficient cleaning; and a method for cleaning wafers, using the liquid chemical. A liquid chemical for forming a water repellent protective film is provided for forming a protective film on a wafer (having at its surface an uneven pattern and containing silicon element at least at a part of the uneven pattern), the protective film being formed at least on surfaces of recessed portions of the uneven pattern at the time of cleaning the wafer. The liquid chemical contains a dialkylsilyl compound represented by the formula [1] and does not contain an acid and a base. R2(H)SiX  [1]

摘要翻译： 本发明涉及一种在半导体器件制造中防止晶片破裂的同时清洁晶片的方法，晶片在其表面处具有不均匀的图案并至少在凹部的表面上含有硅元件。 提供：用于形成保护膜的液体化学品，其允许有效的清洁; 以及使用液体化学品清洗晶片的方法。 提供一种用于形成防水保护膜的液体化学品，用于在晶片上形成保护膜（在其表面具有不均匀图案并且至少在不均匀图案的一部分处含有硅元素），保护膜至少形成 在清洁晶片时在凹凸图案的凹部的表面上。 液体化学品含有由式[1]表示的二烷基甲硅烷基化合物，不含有酸和碱。 R2（H）SiX [1]

公开(公告)号：US20130104931A1

公开(公告)日：2013-05-02

申请号：US13807708

申请日：2011-06-15

申请人： Shinobu Arata ,  Masanori Saito ,  Takashi Saio ,  Soichi Kumon ,  Hidehisa Nanai

发明人： Shinobu Arata ,  Masanori Saito ,  Takashi Saio ,  Soichi Kumon ,  Hidehisa Nanai

IPC分类号： C09D5/38

CPC分类号： C09D5/38 ,  H01L21/02068 ,  H01L21/321

摘要： Disclosed is a liquid chemical for forming a water repellent protective film at least on surfaces of recessed portions of a metal-based wafer, the liquid chemical for forming a water repellent protective film being characterized by comprising a surfactant which has an HLB value of 0.001-10 according to Griffin's method and includes a hydrophobic moiety having a C6-C18 hydrocarbon group and water, and characterized in that the concentration of the surfactant in the liquid chemical is not smaller than 0.00001 mass % and not larger than the saturated concentration relative to 100 mass % of the total amount of the liquid chemical. This liquid chemical can improve a cleaning step which tends to induce a metal-based wafer to cause a pattern collapse.

摘要翻译： 公开了一种用于在至少在金属基晶片的凹部的表面上形成防水保护膜的液体化学品，用于形成防水保护膜的液体化学品的特征在于包含HLB值为0.001- 10，根据Griffin的方法，包括具有C6-C18烃基和水的疏水部分，其特征在于，液体化学品中表面活性剂的浓度不小于0.00001质量％且不大于相对于100的饱和浓度 液体化学品总量的质量％。 这种液体化学品可以改善易于引起金属基晶片导致图案塌陷的清洁步骤。

公开(公告)号：US09349582B2

公开(公告)日：2016-05-24

申请号：US13458119

申请日：2012-04-27

申请人： Soichi Kumon ,  Takashi Saio ,  Masanori Saito ,  Shinobu Arata

发明人： Soichi Kumon ,  Takashi Saio ,  Masanori Saito ,  Shinobu Arata

IPC分类号： C03C23/00 ,  C23G1/02 ,  B08B7/00 ,  B08B9/00 ,  B08B3/00 ,  H01L21/02 ,  H01L21/321 ,  C11D1/00 ,  C11D1/04 ,  C11D1/34 ,  C11D1/40 ,  C11D1/58 ,  C11D3/20 ,  C11D3/28 ,  C11D3/34 ,  C11D3/36 ,  C11D3/43 ,  C11D11/00

CPC分类号： C09D5/00 ,  C11D1/004 ,  C11D1/006 ,  C11D1/04 ,  C11D1/342 ,  C11D1/40 ,  C11D1/58 ,  C11D3/2079 ,  C11D3/28 ,  C11D3/3427 ,  C11D3/361 ,  C11D3/43 ,  C11D11/0047 ,  H01L21/02052 ,  H01L21/02068 ,  H01L21/02093 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/321

摘要： A liquid chemical for forming a water repellent protecting film on a wafer having at its surface an uneven pattern and containing at least one kind of element selected from the group consisting of titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium at surfaces of recessed portions of the uneven pattern, the water repellent protecting film being formed at least on the surfaces of the recessed portions. The liquid chemical is characterized by including: a water repellent protecting film forming agent; and water, and characterized in that the water repellent protecting film forming agent is at least one selected from compounds represented by the following general formula [1] and salt compounds thereof and that the concentration of the water relative to the total quantity of a solvent contained in the liquid chemical is not smaller than 50 mass %.

摘要翻译： 一种用于在晶片上形成防水保护膜的液体化学品，其表面具有不均匀图案，并且含有选自钛，钨，铝，铜，锡，钽和钌中的至少一种元素。 凹凸图案的凹部，防水保护膜至少形成在凹部的表面上。 液体化学品的特征在于包括：防水保护膜形成剂; 和水，其特征在于防水保护膜形成剂为选自下列通式[1]表示的化合物及其盐化合物中的至少一种，并且水相对于所含溶剂总量的浓度 在液体化学品中不低于50质量％。

公开(公告)号：US20130092191A1

公开(公告)日：2013-04-18

申请号：US13703593

申请日：2011-06-15

申请人： Takashi Saio ,  Soichi Kumon ,  Masanori Saito ,  Shinobu Arata ,  Hidehisa Nanai

发明人： Takashi Saio ,  Soichi Kumon ,  Masanori Saito ,  Shinobu Arata ,  Hidehisa Nanai

IPC分类号： C09D7/12 ,  C07F7/12 ,  C07F7/10

CPC分类号： C09D7/1233 ,  C07F7/10 ,  C07F7/12 ,  C09D7/63 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/306 ,  H01L21/3105

摘要： The present invention relates to a method for cleaning wafers while preventing pattern collapse of the wafers in semiconductor device fabrication, the wafer having at its surface an uneven pattern and containing silicon element at least on surfaces of recessed portions. Provided is: a liquid chemical for forming a protective film which allows efficient cleaning; and a method for cleaning wafers, using the liquid chemical. A liquid chemical for forming a water repellent protective film is provided for forming a protective film on a wafer (having at its surface an uneven pattern and containing silicon element at least at a part of the uneven pattern), the protective film being formed at least on surfaces of recessed portions of the uneven pattern at the time of cleaning the wafer. The liquid chemical contains a dialkylsilyl compound represented by the formula [1] and does not contain an acid and a base. R2(H)SiX   [1]

摘要翻译： 本发明涉及一种在半导体器件制造中防止晶片破裂的同时清洁晶片的方法，晶片在其表面处具有不均匀的图案并至少在凹部的表面上含有硅元件。 提供：用于形成保护膜的液体化学品，其允许有效的清洁; 以及使用液体化学品清洗晶片的方法。 提供一种用于形成防水保护膜的液体化学品，用于在晶片上形成保护膜（在其表面具有不均匀图案并且至少在不均匀图案的一部分处含有硅元素），保护膜至少形成 在清洁晶片时在凹凸图案的凹部的表面上。 液体化学品含有由式[1]表示的二烷基甲硅烷基化合物，不含有酸和碱。 R2（H）SiX [1]