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    SEMICONDUCTORS BASED ON SUBSTITUTED [1]BENZOTHIENO[3,2-b][1]-BENZOTHIOPHENES
    14.
    发明申请
    SEMICONDUCTORS BASED ON SUBSTITUTED [1]BENZOTHIENO[3,2-b][1]-BENZOTHIOPHENES 审中-公开

    公开(公告)号：US20130146858A1

    公开(公告)日：2013-06-13

    申请号：US13809946

    申请日：2011-07-19

    申请人： Timo Meyer-Friedrichsen ,  Knud Reuter ,  Andreas Elschner ,  Marcus Halik

    发明人： Timo Meyer-Friedrichsen ,  Knud Reuter ,  Andreas Elschner ,  Marcus Halik

    IPC分类号： H01L51/00

    CPC分类号： H01L51/0074 ,  C07D495/04 ,  C07F9/655354 ,  H01L51/0002 ,  H01L51/0558 ,  Y02E10/549 ,  Y02P70/521

    摘要： The present invention relates to compounds of the general formula (I) wherein Z corresponds a to — a C1-C22-alkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHalnR23−n(R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl), — a C5-C12-cycloalkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups—P(O) (OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHal−nR23−n(R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl), — a C6-C14-aryl radical or heteroaryl radical from the group of the thienyl, pyrryl, furyl or pyridyl radicals substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHalnR23−n (R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl), or — a C7-C30-aralkyl radical optionally substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHalnR23−n (R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl) or a trialkylsilyl radical R5R6R7Si, in which R5, R6, R7 independently of each other are identical or different C1-C18-alkyl radicals. The present invention also relates to a semiconductor layer, an electronic component, a process for the production of an electronic component, the electronic component obtainable by this process and the use of compounds of the general formula (I).

    Integrated Circuit Comprising an Organic Semiconductor, and Method for the Production of an Integrated Circuit
    15.
    发明申请
    Integrated Circuit Comprising an Organic Semiconductor, and Method for the Production of an Integrated Circuit 有权
    包含有机半导体的集成电路以及集成电路的制造方法

    公开(公告)号：US20080315192A1

    公开(公告)日：2008-12-25

    申请号：US12188966

    申请日：2008-08-08

    申请人： Marcus Halik ,  Hagen Klauk ,  Guenter Schmid ,  Andreas Walter ,  Ute Zschieschang

    发明人： Marcus Halik ,  Hagen Klauk ,  Guenter Schmid ,  Andreas Walter ,  Ute Zschieschang

    IPC分类号： H01L51/05

    CPC分类号： H01B3/442 ,  H01L51/052

    摘要： An embodiment of the invention provides an integrated circuit having an organic field effect transistor (OFET) with a dielectric layer. The dielectric layer is prepared from a polymer formulation comprising: about 100 parts of at least one crosslinkable base polymer, from about 10 to about 20 parts of at least one di- or tribenzyl alcohol compound as an electrophilic crosslinking component, from about 0.2 to about 10 parts of at least one photo acid generator, and at least one solvent. Another embodiment provides a semiconductor fabrication method. The method comprises applying the polymer formulation to a surface of a substrate, drying the polymer formulation, crosslinking the polymer formulation after drying, and baking the polymer formulation after crosslinking.

    摘要翻译： 本发明的一个实施例提供一种具有介电层的有机场效应晶体管（OFET）的集成电路。 介电层由聚合物制剂制备，包括：约100份至少一种可交联的基础聚合物，约10至约20份至少一种作为亲电交联成分的二 - 或三苄醇化合物，约0.2至约 10份至少一种光酸产生剂和至少一种溶剂。 另一实施例提供半导体制造方法。 该方法包括将聚合物制剂施用于基材表面，干燥聚合物制剂，干燥后交联聚合物制剂，以及在交联后烘烤聚合物制剂。

    Ultrathin Dielectrics and the Application Thereof in Organic Field Effect Transistors
    16.
    发明申请
    Ultrathin Dielectrics and the Application Thereof in Organic Field Effect Transistors 审中-公开
    超薄电介质及其在有机场效应晶体管中的应用

    公开(公告)号：US20080290337A1

    公开(公告)日：2008-11-27

    申请号：US11568791

    申请日：2005-11-17

    申请人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Guenter Schmid ,  Franz Effenberger

    发明人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Guenter Schmid ,  Franz Effenberger

    IPC分类号： H01L51/10 ,  H01L51/40

    CPC分类号： H01L51/052 ,  H01L51/0012 ,  H01L51/0533 ,  H01L51/0541 ,  H01L51/0545

    摘要： An organic field effect transistor, having a substrate, a source electrode, a drain electrode and a gate electrode and an organic semiconductor material is disclosed. Arranged between the gate electrode and the organic semiconductor material is a dielectric layer (gate dielectric) obtained from a self-assembled monolayer of an organic compound having an anchor group, a linker group, a head group, and an aliphatic orientating group, the anchor group, the linker group, the head group, and the aliphatic orientating group being combined with one another in the order stated.

    摘要翻译： 公开了一种具有基板，源电极，漏电极和栅电极以及有机半导体材料的有机场效应晶体管。 在栅电极和有机半导体材料之间布置的是从具有锚定基团，连接基团，头基团和脂族取向基团的有机化合物的自组装单层获得的电介质层（栅极电介质），所述锚 基团，连接基团，头基团和脂族取代基团按所述顺序彼此组合。

    Semiconductor component having at least one organic semiconductor layer and method for fabricating the same
    18.
    发明授权
    Semiconductor component having at least one organic semiconductor layer and method for fabricating the same 有权
    具有至少一个有机半导体层的半导体部件及其制造方法

    公开(公告)号：US07303940B2

    公开(公告)日：2007-12-04

    申请号：US11066732

    申请日：2005-02-25

    申请人： Florian Eder ,  Marcus Halik ,  Hagen Klauk ,  Günter Schmid ,  Ute Zschieschang

    发明人： Florian Eder ,  Marcus Halik ,  Hagen Klauk ,  Günter Schmid ,  Ute Zschieschang

    IPC分类号： H01L51/40 ,  H01L21/4763 ,  H01L51/00 ,  H01L23/58

    CPC分类号： H01L51/107 ,  H01L51/0545

    摘要： A semiconductor component has at least one organic semiconductor layer. The component also includes at least one protective layer for at least partially covering the at least one organic semiconductor layer to protect against environmental influences. The at least one protective layer contains a proportion of an alkane with CnH2n+1 and n greater than or equal to 15 or consists entirely of an alkane of this type, or of a mixture of alkanes of this type. In one example, the protective layer is a paraffin wax. This creates a high resistance to moisture.

    摘要翻译： 半导体部件具有至少一个有机半导体层。 该组件还包括至少一个保护层，用于至少部分地覆盖至少一个有机半导体层以防止环境影响。 至少一个保护层含有一定比例的具有C n H 2n + 1 N的烷烃，n大于或等于15，或完全由这种烷烃组成 ，或这种类型的烷烃的混合物。 在一个实例中，保护层是石蜡。 这产生了很高的耐湿性。