摘要:
An air outlet has a plurality of vertical vortex generating structures 21 in a triangular shape arranged so as to be oriented at an angle &thgr; with respect to diffused air.
摘要:
A phosphoenolpyruvate carboxylase gene, which has mutation such as mutation to replace 625th glutamic acid from the N-terminus of phosphoenolpyruvate carboxylase with lysine, mutation to replace 438th arginine from the N-terminus with cysteine and the like, is introduced into Escherichia coli or coryneform bacteria, so as to produce a phosphoenolpyruvate carboxylase which is not substantially inhibited by aspartic acid, thereby amino acid is efficiently produced.
摘要:
A photoelectric emission surface which is excellent in stability and reproducibility of photoelectric conversion characteristics and has a structure capable of obtaining a high photosensitivity is provided. A predetermined voltage is applied between an upper surface electrode and a lower surface electrode by a battery. Upon application of this voltage, a p-n junction formed between a contact layer and an electron emission layer is reversely biased. A depletion layer extends from the p-n junction into the photoelectric emission surface, and an electric field is formed in the electron emission layer and a light absorbing layer in a direction for accelerating photoelectrons. When incident light is absorbed in the light absorbing layer to excite photoelectrons, the photoelectrons are accelerated by the electric field toward the emission surface. The photoelectrons obtain an energy upon this electric field acceleration, and are transitioned, in the electron emission layer, to a conduction band at a higher energy level, and emitted into a vacuum.
摘要:
The present invention discloses a cleaning cloth, an abrasive cloth, a cleaning buff and an abrasive buff which are each formed by knitting/weaving bamboo fibers having excellent cleaning, abrasive capacity and excellent ignition resistance.
摘要:
A proton-conducting structure that exhibits favorable proton conductivity in the temperature range of not lower than 100° C., and a method for manufacturing the same are provided. After a pyrophosphate salt containing Sn, Zr, Ti or Si is mixed with phosphoric acid, the mixture is maintained at a temperature of not less than 80° C. and not more than 150° C., and thereafter maintained at a temperature of not less than 200° C. and not more than 400° C. to manufacture a proton-conducting structure. The proton-conducting structure of the present invention has a core made of tin pyrophosphate, and a coating layer formed on the surface of the core, the coating layer containing Sn and O, and having a coordination number of O with respect to Sn of grater than 6.
摘要:
The present invention relates to dilute fluoride solutions and methods for cleaning plasma etch residue from semiconductor substrates including such dilute solutions. The compositions and methods according to the invention can advantageously provide both cleaning efficiency and material compatibility.
摘要:
The present invention describes a method for producing a target substance by utilizing a microorganism comprising culturing the microorganism in a medium, allowing the target substance to accumulate, and collecting the target substance from the medium. Also the microorganism used in the present invention is a mutant strain whereby maltose assimilation is controlled by the interaction between IIAGlc protein of glucose PTS and MalK.
摘要:
A material having a negative or low thermal expansion coefficient and composed substantially of a single crystal system is provided.The material is an oxide represented by the chemical formula ((R4+M2+)1-xA3+2x)(QO4)3 (where R stands for at least one tetravalent metal element selected from Zr and Hf; M stands for at least one divalent metal element selected from Mg, Ca, Sr, Ba, and Ra; Q stands for at least one hexavalent metal element selected from W and Mo; and A stands for at least one trivalent metal element selected from Al, Sc, Y, Lu, Ga, and In; 0
摘要:
A material having a negative or low thermal expansion coefficient and composed substantially of a single crystal system is provided. The material is an oxide represented by the chemical formula ((R4+M2+)1-xA3+2x)(QO4)3 (where R stands for at least one tetravalent metal element selected from Zr and Hf; M stands for at least one divalent metal element selected from Mg, Ca, Sr, Ba, and Ra; Q stands for at least one hexavalent metal element selected from W and Mo; and A stands for at least one trivalent metal element selected from Al, Sc, Y, Lu, Ga, and In; 0
摘要:
Using as a negative thermal expansion material a double oxide containing at least partly a compound represented by the chemical formula: RQ2O8 (wherein R is Zr, Hf or a tetravalent metallic element represented by a mixture system of these, and Q is a hexavalent metallic element selected from W and Mo), and using as a positive thermal expansion material a material containing at least partly a compound represented by the chemical formula: MQX4 (wherein M is Mg, Ca, Sr, Ba, Ra or a divalent metallic element represented by a mixture system of any of these, Q is a hexavalent metallic element selected from W and Mo, and X is an element selected from O and S), these are mixed preferably in a weight ratio of 1:1 and are synthesized to obtain a material whose coefficient of thermal expansion is substantially zero over a wide temperature range, i.e., a zero thermal expansion material. Using this zero thermal expansion material, high-precision and high-performance practical component parts can be obtained.