公开(公告)号：US07638781B2

公开(公告)日：2009-12-29

申请号：US11860333

申请日：2007-10-22

Applicant: Steven R. Walther ,  Harold M. Persing

Inventor： Steven R. Walther ,  Harold M. Persing

IPC: A61N5/00

CPC classification number: H01J37/3299 ,  H01J37/32449 ,  H01J37/32935

Abstract: A plasma processing system includes a process chamber, a source configured to generate a plasma in the process chamber, a platen configured to support a workpiece in the process chamber, and a pressure sensor positioned adjacent to the workpiece. The pressure sensor is configured to monitor a local pressure adjacent to the workpiece. A method includes generating a plasma in a process chamber, supporting a workpiece in the process chamber, and monitoring a local pressure adjacent to the workpiece with a pressure sensor positioned adjacent to the workpiece.

Abstract translation: 等离子体处理系统包括处理室，被配置为在处理室中产生等离子体的源，被配置为支撑处理室中的工件的压板和邻近工件定位的压力传感器。 压力传感器被配置为监测邻近工件的局部压力。 一种方法包括在处理室中产生等离子体，在处理室中支撑工件，并用邻近工件定位的压力传感器监测与工件相邻的局部压力。

公开(公告)号：US20090101848A1

公开(公告)日：2009-04-23

申请号：US11860333

申请日：2007-10-22

Applicant: Steven R. Walther ,  Harold M. Persing

Inventor： Steven R. Walther ,  Harold M. Persing

IPC: G21K5/00

CPC classification number: H01J37/3299 ,  H01J37/32449 ,  H01J37/32935

Abstract: A plasma processing system includes a process chamber, a source configured to generate a plasma in the process chamber, a platen configured to support a workpiece in the process chamber, and a pressure sensor positioned adjacent to the workpiece. The pressure sensor is configured to monitor a local pressure adjacent to the workpiece. A method includes generating a plasma in a process chamber, supporting a workpiece in the process chamber, and monitoring a local pressure adjacent to the workpiece with a pressure sensor positioned adjacent to the workpiece.

Abstract translation: 等离子体处理系统包括处理室，被配置为在处理室中产生等离子体的源，被配置为支撑处理室中的工件的压板和邻近工件定位的压力传感器。 压力传感器被配置为监测邻近工件的局部压力。 一种方法包括在处理室中产生等离子体，在处理室中支撑工件，并用邻近工件定位的压力传感器监测与工件相邻的局部压力。

公开(公告)号：US08470616B2

公开(公告)日：2013-06-25

申请号：US13529702

申请日：2012-06-21

Applicant: Paul Sullivan ,  Peter Nunan ,  Steven R. Walther

Inventor： Paul Sullivan ,  Peter Nunan ,  Steven R. Walther

IPC: H01L21/00 ,  G01T1/36

CPC classification number: H01L31/022425 ,  H01L31/03529 ,  H01L31/068 ,  H01L31/0682 ,  Y02E10/547

Abstract: Apparatuses and methods for manufacturing a solar cell are disclosed. In a particular embodiment, the solar cell may be manufactured by disposing a solar cell in a chamber having a particle source; disposing a patterned assembly comprising an aperture and an assembly segment between the particle source and the solar cell; and selectively implanting first type dopants traveling through the aperture into a first region of the solar cell while minimizing introduction of the first type dopants into a region outside of the first region.

Abstract translation: 公开了用于制造太阳能电池的装置和方法。 在特定实施例中，太阳能电池可以通过在具有粒子源的室中设置太阳能电池来制造; 布置图案化组件，其包括孔和在所述颗粒源和所述太阳能电池之间的组件段; 以及将穿过所述孔的第一类型掺杂剂选择性地注入到所述太阳能电池的第一区域中，同时最小化将所述第一类型掺杂剂引入所述​​第一区域外的区域。

公开(公告)号：US07939424B2

公开(公告)日：2011-05-10

申请号：US12212386

申请日：2008-09-17

Applicant: Yuri Erokhin ,  Paul Sullivan ,  Steven R. Walther ,  Peter Nunan

Inventor： Yuri Erokhin ,  Paul Sullivan ,  Steven R. Walther ,  Peter Nunan

IPC: H01L21/30 ,  H01L21/46

CPC classification number: H01L21/76251 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/201 ,  H01J2237/202 ,  H01L21/26506 ,  H01L21/6835 ,  H01L2221/68359 ,  H01L2924/30105

Abstract: A method for wafer bonding two substrates activated by ion implantation is disclosed. An in situ ion bonding chamber allows ion activation and bonding to occur within an existing process tool utilized in a manufacturing process line. Ion activation of at least one of the substrates is performed at low implant energies to ensure that the wafer material below the thin surface layers remains unaffected by the ion activation.

Abstract translation: 公开了一种通过离子注入激活的晶片接合两个基板的方法。 原位离子键合室允许离子激活和结合发生在制造工艺线中使用的现有工艺工具中。 在低注入能量下进行至少一个衬底的离子激活，以确保薄表面层下面的晶片材料不受离子激活的影响。

公开(公告)号：US20090209084A1

公开(公告)日：2009-08-20

申请号：US12119170

申请日：2008-05-12

Applicant: Peter Nunan ,  Steven R. Walther ,  Yuri Erokhin ,  Paul J. Sullivan

Inventor： Peter Nunan ,  Steven R. Walther ,  Yuri Erokhin ,  Paul J. Sullivan

IPC: H01L21/30

CPC classification number: H01L21/76254

Abstract: An approach for providing a cleave initiation using a varying ion implant dose is described. In one embodiment, there is a method of forming a substrate. In this embodiment, a semiconductor material is provided and implanted with a spatially varying dose of one or more ion species. A handler substrate is attached to the implanted semiconductor material. A cleave of the implanted semiconductor material is initiated from the handler substrate at a preferential location that is a function of a dose gradient that develops from the spatially varying dose of one or more ion species implanted into the semiconductor material

Abstract translation: 描述了使用变化的离子注入剂量提供切割引发的方法。 在一个实施例中，存在形成衬底的方法。 在该实施例中，提供半导体材料并且注入空间变化的一种或多种离子种类的剂量。 处理衬底附着到植入的半导体材料上。 植入的半导体材料的切割在优先位置从处理器基底开始，该优先位置是从注入到半导体材料中的一种或多种离子种类的空间变化剂量形成的剂量梯度的函数

公开(公告)号：US20090181492A1

公开(公告)日：2009-07-16

申请号：US12013064

申请日：2008-01-11

Applicant: Peter Nunan ,  Steven R. Walther ,  Yuri Erokhin

Inventor： Peter Nunan ,  Steven R. Walther ,  Yuri Erokhin

IPC: H01L31/18

CPC classification number: H01L31/1804 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/76254 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

Abstract: An approach for nano-cleaving a thin-film of silicon for solar cell fabrication is described. In one embodiment, there is a method of forming a substrate for use as a solar cell substrate. In this embodiment, a substrate of silicon is provided and implanted with an ion flux. A non-silicon substrate is attached to the thin-film of silicon to form a solar cell substrate.

Abstract translation: 描述了用于太阳能电池制造的用于纳米切割硅薄膜的方法。 在一个实施例中，存在形成用作太阳能电池基板的基板的方法。 在本实施例中，提供硅衬底并注入离子通量。 将非硅衬底附着到硅的薄膜上以形成太阳能电池衬底。

公开(公告)号：US07396746B2

公开(公告)日：2008-07-08

申请号：US10852643

申请日：2004-05-24

Applicant: Steven R. Walther ,  Ziwei Fang ,  Justin Tocco ,  Carleton F. Ellis, III

Inventor： Steven R. Walther ,  Ziwei Fang ,  Justin Tocco ,  Carleton F. Ellis, III

IPC: H01L21/425

CPC classification number: H01J37/32412 ,  C23C14/48 ,  H01L21/2236

Abstract: A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system having a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber, an anode spaced from the platen, and a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, a parameter of an implant process is varied to at least partially compensate for undesired effects of interaction between ions being implanted and the substrate. For example, dose rate, ion energy, or both may be varied during the implant process. In another aspect, a pretreatment step includes accelerating ions from the plasma to the anode to cause emission of secondary electrons from the anode, and accelerating the secondary electrons from the anode to a substrate for pretreatment of the substrate.

Abstract translation: 用于等离子体离子注入衬底的方法包括提供等离子体离子注入系统，其具有处理室，用于在处理室中产生等离子体的源，用于在处理室中保持衬底的压板，与压板隔开的阳极， 以及用于产生用于将离子从等离子体加速到衬底中的注入脉冲的脉冲源。 在一个方面，改变注入过程的参数以至少部分地补偿被植入的离子与衬底之间的相互作用的不期望的影响。 例如，剂量率，离子能量或二者可以在植入过程期间变化。 另一方面，预处理步骤包括将离子从等离子体加速到阳极，以引起来自阳极的二次电子的发射，以及将二次电子从阳极加速至衬底以进行预处理。

公开(公告)号：US20140209820A1

公开(公告)日：2014-07-31

申请号：US14243554

申请日：2014-04-02

Applicant: Kenneth J. Barry ,  Mark T. Brown ,  Michael L. Bufano ,  Gerald M. Friedman ,  Peter M. King ,  Matthew A. Medford ,  Anne L. Testoni ,  Steven R. Walther ,  Tzvi Avnery

Inventor： Kenneth J. Barry ,  Mark T. Brown ,  Michael L. Bufano ,  Gerald M. Friedman ,  Peter M. King ,  Matthew A. Medford ,  Anne L. Testoni ,  Steven R. Walther ,  Tzvi Avnery

IPC: H01J33/04 ,  G21K1/00

CPC classification number: H01J33/04 ,  G21K1/00

Abstract: Systems and methods for manufacturing a vacuum device, such as an electron emitter, that includes a foil exit window palced over and joined to a support grid. In one particular method, the vacuum chamber of an electron emitter has a thin foil forming an exit window at one end. The thin foil may be titanium or any suitable material and the foil will typically enlarge during a bonding process that attaches the foil to the support grid. In one manufacturing process, the support grid is provided with a surface that has contours, typically being smooth recessed surfaces, that the foil once enlarged can lie against as the vacuum pulls the foil against the grid.

Abstract translation: 用于制造诸如电子发射器的真空装置的系统和方法，其包括在支撑网格上踩过并连接到支撑网格的箔出口窗口。 在一种特定方法中，电子发射器的真空室具有在一端形成出射窗的薄箔。 薄箔可以是钛或任何合适的材料，并且箔将通常在将箔附接到支撑网格的粘合过程中扩大。 在一个制造过程中，支撑格栅设置有表面，该表面具有轮廓，通常是光滑的凹面，当箔真空将箔拉到格栅上时，箔一旦放大就可以抵抗。

公开(公告)号：US07820987B2

公开(公告)日：2010-10-26

申请号：US11961157

申请日：2007-12-20

Applicant: Morgan Evans ,  Norman E. Hussey ,  Steven R. Walther ,  Rekha Padmanabhan

Inventor： Morgan Evans ,  Norman E. Hussey ,  Steven R. Walther ,  Rekha Padmanabhan

IPC: A61N5/00 ,  G21G5/00

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01J2237/30455 ,  H01J2237/30472

Abstract: An approach for predicting dose repeatability in an ion implantation is described. In one embodiment, an ion source is tuned to generate an ion beam with desired beam current. Beam current measurements are obtained from the tuned ion beam. The dose repeatability is predicted for the ion implantation as a function of the beam current measurements.

Abstract translation: 描述了用于预测离子注入中的剂量重复性的方法。 在一个实施例中，调节离子源以产生具有期望的束电流的离子束。 光束电流测量从调谐离子束获得。 作为束电流测量的函数，预测离子注入的剂量重复性。

公开(公告)号：US20090227062A1

公开(公告)日：2009-09-10

申请号：US12205514

申请日：2008-09-05

Applicant: Paul Sullivan ,  Peter Nunan ,  Steven R. Walther

Inventor： Paul Sullivan ,  Peter Nunan ,  Steven R. Walther

IPC: H01L31/18 ,  G21G4/00

CPC classification number: H01L31/022425 ,  H01L31/03529 ,  H01L31/068 ,  H01L31/0682 ,  Y02E10/547

Abstract: Apparatuses and methods for manufacturing a solar cell are disclosed. In a particular embodiment, the solar cell may be manufactured by disposing a solar cell in a chamber having a particle source; disposing a patterned assembly comprising an aperture and an assembly segment between the particle source and the solar cell; and selectively implanting first type dopants traveling through the aperture into a first region of the solar cell while minimizing introduction of the first type dopants into a region outside of the first region.

Abstract translation: 公开了用于制造太阳能电池的装置和方法。 在特定实施例中，太阳能电池可以通过在具有粒子源的室中设置太阳能电池来制造; 布置图案化组件，其包括孔和在所述颗粒源和所述太阳能电池之间的组件段; 以及将穿过所述孔的第一类型掺杂剂选择性地注入到所述太阳能电池的第一区域中，同时最小化将所述第一类型掺杂剂引入所述​​第一区域外的区域。