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11.发明申请公开(公告)号：US20210286255A1
公开(公告)日：2021-09-16
申请号：US17335944
申请日：2021-06-01
Inventor： Hsin-Chang LEE , Ping-Hsun LIN , Chih-Cheng LIN , Chia-Jen CHEN
Abstract: A method of making a semiconductor device includes forming at least one fiducial mark on a photomask outside of a pattern region of the photomask, and the at least one fiducial mark includes identifying information for the photomask. The method includes defining a pattern including a plurality of sub-patterns on the photomask in the pattern region based on the identifying information. The defining of the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns, or rotating the first sub-pattern about an axis perpendicular to a top surface of the photomask relative to the second sub-pattern. The method includes transferring the pattern from the photomask to a wafer.
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公开(公告)号：US20230288813A1
公开(公告)日：2023-09-14
申请号：US18197563
申请日：2023-05-15
Inventor： Chien-Cheng CHEN , Chia-Jen CHEN , Hsin-Chang LEE , Shih-Ming CHANG , Tran-Hui SHEN , Yen-Cheng HO , Chen-Shao HSU
CPC classification number: G03F7/70441 , G03F1/36 , G03F1/78 , H01J37/3174
Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.
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公开(公告)号：US20220334462A1
公开(公告)日：2022-10-20
申请号：US17855630
申请日：2022-06-30
Inventor： Hsin-Chang LEE , Ping-Hsun LIN , Yen-Cheng HO , Chih-Cheng LIN , Chia-Jen CHEN
Abstract: A method of fabricating a photomask includes selectively exposing portions of a photomask blank to radiation to change an optical property of the portions of the photomask blank exposed to the radiation, thereby forming a pattern of exposed portions of the photomask blank and unexposed portions of the photomask blank. The pattern corresponds to a pattern of semiconductor device features.
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公开(公告)号：US20220260926A1
公开(公告)日：2022-08-18
申请号：US17740048
申请日：2022-05-09
Inventor： Chien-Cheng CHEN , Chia-Jen CHEN , Hsin-Chang LEE , Shih-Ming CHANG , Tran-Hui SHEN , Yen-Cheng HO , Chen-Shao HSU
Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.
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15.发明申请公开(公告)号：US20190258156A1
公开(公告)日：2019-08-22
申请号：US16399843
申请日：2019-04-30
Inventor： Hsin-Chang LEE , Chia-Jen CHEN , Chih-Cheng LIN , Ping-Hsun LIN
IPC: G03F1/44 , G03F1/76 , G03F7/20 , G03F1/84 , G03F1/22 , H01L21/027 , G03F1/72 , G03F1/54 , G03F1/78
Abstract: A photomask includes a pattern region and a plurality of defects in the pattern region. The photomask further includes a first fiducial mark outside of the pattern region, wherein the first fiducial mark includes identifying information for the photomask, the first fiducial mark has a first size and a first shape. The photomask further includes a second fiducial mark outside of the pattern region. The second fiducial mark has a second size different from the first size, or a second shape different from the first shape.
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Patent Agency Ranking
公开(公告)号：US20240337951A1
公开(公告)日：2024-10-10
申请号：US18745211
申请日：2024-06-17
Inventor： Chien-Cheng CHEN , Chia-Jen CHEN , Hsin-Chang LEE , Shih-Ming CHANG , Tran-Hui SHEN , Yen-Cheng HO , Chen-Shao HSU
CPC classification number: G03F7/70441 , G03F1/36 , G03F1/78 , G03F1/76 , G03F7/2002 , G03F7/70358 , G03F7/70608 , G03F7/70616 , G03F7/70716 , H01J37/3174 , H01J2237/31771
Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.
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公开(公告)号：US20240310744A1
公开(公告)日：2024-09-19
申请号：US18671174
申请日：2024-05-22
Inventor： Chung-Hsuan LIU , Chen-Yang LIN , Ku-Hsiang SUNG , Da-Wei YU , Kuan-Wen LIN , Chia-Jen CHEN , Hsin-Chang LEE
CPC classification number: G03F7/70925 , B08B7/0035 , B08B13/00 , H01L21/02057 , H01L22/12 , H05H1/01
Abstract: In a method of manufacturing a semiconductor device a semiconductor wafer is retrieved from a load port. The semiconductor wafer is transferred to a treatment device. In the treatment device, the surface of the semiconductor wafer is exposed to a directional stream of plasma wind to clean a particle from the surface of the semiconductor wafer. The stream of plasma wind is generated by an ambient plasma generator and is directed at an oblique angle with respect to a perpendicular plane to the surface of the semiconductor wafer for a predetermined plasma exposure time. After the cleaning, a photo resist layer is disposed on the semiconductor wafer.
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公开(公告)号：US20240094625A1
公开(公告)日：2024-03-21
申请号：US18522942
申请日：2023-11-29
Inventor： Hsin-Chang LEE , Ping-Hsun LIN , Chih-Cheng LIN , Chia-Jen CHEN
Abstract: A method of making a semiconductor device includes forming at least one fiducial mark on a photomask. The method further includes defining a pattern including a plurality of sub-patterns on the photomask in a pattern region. The defining the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns.
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公开(公告)号：US20230251563A1
公开(公告)日：2023-08-10
申请号：US18130262
申请日：2023-04-03
Inventor： Hsin-Chang LEE , Chia-Jen CHEN , Pei-Cheng HSU , Ta-Cheng LIEN
Abstract: In a method of manufacturing a reflective mask, a photo resist layer is formed over a mask blank. The mask blank includes a substrate, a reflective multilayer on the substrate, a capping layer on the reflective multilayer, an absorber layer on the capping layer and a hard mask layer, and the absorber layer is made of Cr, CrO or CrON. The photo resist layer is patterned, the hard mask layer is patterned by using the patterned photo resist layer, the absorber layer is patterned by using the patterned hard mask layer, and an additional element is introduced into the patterned absorber layer to form a converted absorber layer.
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公开(公告)号：US20220252993A1
公开(公告)日：2022-08-11
申请号：US17713012
申请日：2022-04-04
Inventor： Chen-Yang LIN , Da-Wei YU , Li-Hsin WANG , Kuan-Wen LIN , Chia-Jen CHEN , Hsin-Chang LEE
Abstract: An photolithographic apparatus includes a particle removing cassette selectively extendable from the processing apparatus. The particle removing cassette includes a wind blade slit and an exhausting slit. The wind blade slit is configured to direct pressurized cleaning material to a surface of the mask to remove the debris particles from the surface of the mask. The exhausting slit collects the debris particles separated from the surface of the mask and contaminants through the exhaust line. In some embodiments, the wind blade slit includes an array of wind blade nozzles spaced apart within the wind blade slit. In some embodiments, the exhausting slit includes array of exhaust lines spaced apart within the exhausting slit.
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