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    THIN FILM CAPACITOR
    13.
    发明申请
    THIN FILM CAPACITOR 有权
    薄膜电容器

    公开(公告)号：US20160217925A1

    公开(公告)日：2016-07-28

    申请号：US15006632

    申请日：2016-01-26

    Applicant: TDK CORPORATION

    Inventor： Hitoshi Saita ,  Hiroyasu Inoue ,  Yoshihiko Yano

    IPC: H01G4/12 ,  H01G4/012 ,  H01G4/008

    CPC classification number: H01G4/1227 ,  H01G4/1236 ,  H01G4/33

    Abstract: A thin film capacitor comprises a base material, a dielectric layer provided on the base material, and an upper electrode layer provided on the dielectric layer. The dielectric layer includes a plurality of columnar crystals that extend along a normal direction with respect to a surface of the upper electrode layer. The columnar crystal has a perovskite crystal structure represented by AyBO3. An element A is at least one of Ba, Ca, Sr, and Pb, and an element B is at least one of Ti, Zr, Sn, and Hf. Further, y≦0.995 is satisfied, and the dielectric layer contains 0.05 to 2.5 mol of Mg per 100 mol of AyBO3.

    Abstract translation: 薄膜电容器包括基材，设置在基材上的电介质层和设置在电介质层上的上电极层。 电介质层包括相对于上电极层的表面沿着法线方向延伸的多个柱状晶体。 柱状晶体具有由AyBO 3表示的钙钛矿晶体结构。 元素A是Ba，Ca，Sr和Pb中的至少一种，元素B是Ti，Zr，Sn和Hf中的至少一种。 此外，y≤0.995，电介质层每100摩尔AyBO 3含有0.​​05〜2.5摩尔的Mg。

    Dielectric device
    14.
    发明授权
    Dielectric device 有权

    公开(公告)号：US12183513B2

    公开(公告)日：2024-12-31

    申请号：US18080962

    申请日：2022-12-14

    Applicant: TDK CORPORATION

    Inventor： Masahiro Hiraoka ,  Hitoshi Saita

    IPC: H01G4/12 ,  H01G4/33

    Abstract: A dielectric device includes a first electrode, dielectric film, and second electrode, which are laminated. The dielectric film includes columnar crystals extending in a lamination direction. Provided that “x” denotes a reciprocal (1/μm) of a dielectric film thickness and “y” denotes a dielectric material average crystallite size (nm) calculated by the Scherrer equation, “x” and “y” are located within a quadrilateral having point A (0.10, 5), point B (10, 20), point C (10, 35), and point D (0.10, 10) as vertices. Alternatively, the columnar crystals have an average width of less than 40 nm within a distance range from one tenth to one third of the dielectric film thickness from one electrode to the other and an average width of 40 nm or more within a distance range from one tenth to one third of the dielectric film thickness from the other electrode to the one in the lamination direction.

    Capacitor component
    15.
    发明授权
    Capacitor component 有权

    公开(公告)号：US11742142B2

    公开(公告)日：2023-08-29

    申请号：US17581060

    申请日：2022-01-21

    Applicant: TDK CORPORATION

    Inventor： Hitoshi Saita

    IPC: H01G2/16 ,  H01G4/005 ,  H01G4/228

    CPC classification number: H01G2/16 ,  H01G4/005 ,  H01G4/228

    Abstract: Disclosed herein is a capacitor component that includes a lower electrode, a capacitive insulating film covering the lower electrode, a plurality of upper electrodes overlapping the lower electrode through the capacitive insulating film, a first external terminal connected to the lower electrode, a plurality of fuse wires connected respectively to the plurality of upper electrodes, and a second external terminal connected in common to the plurality of fuse wires. The resistance values of the plurality of respective fuse wires are higher than the resistance values of the plurality of corresponding upper electrodes.

    Dielectric film, dielectric element, and electronic circuit board
    17.
    发明授权
    Dielectric film, dielectric element, and electronic circuit board 有权

    公开(公告)号：US11462339B2

    公开(公告)日：2022-10-04

    申请号：US16702280

    申请日：2019-12-03

    Applicant: TDK CORPORATION

    Inventor： Saori Takahashi ,  Masahito Furukawa ,  Masamitsu Haemori ,  Hiroki Uchiyama ,  Wakiko Sato ,  Hitoshi Saita

    IPC: H01B3/12 ,  H01G4/33 ,  H01G4/12 ,  H05K1/18 ,  H05K3/30

    Abstract: A dielectric film may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after film formation. The inventors have newly found that when a dielectric film includes Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)O3 is provided and satisfies at least one between relationships such that degree of orientation of (100) plane is higher than degree of orientation of (110) plane, and degree of orientation of (111) plane is higher than degree of orientation of (110) plane in a film thickness direction, the dielectric film is less likely to be damaged during a wet process, and the resistance to a wet process is improved.

    Thin film capacitor
    19.
    发明授权
    Thin film capacitor 有权

    公开(公告)号：US11069483B2

    公开(公告)日：2021-07-20

    申请号：US16141031

    申请日：2018-09-25

    Applicant: TDK Corporation

    Inventor： Hiroshi Takasaki ,  Masahiro Hiraoka ,  Hitoshi Saita

    IPC: H01G4/008 ,  H01G4/12 ,  H01G4/33

    Abstract: A thin film capacitor includes a first electrode layer (10), a dielectric layer (20) stacked on the first electrode layer (10), and a second electrode layer (30) stacked on the dielectric layer (20), wherein the dielectric layer (20) includes a layered void aggregation region (22) which extends in a direction orthogonal to a stacking direction.

    Thin-film capacitor
    20.
    发明授权
    Thin-film capacitor 有权

    公开(公告)号：US10529495B2

    公开(公告)日：2020-01-07

    申请号：US15725571

    申请日：2017-10-05

    Applicant: TDK CORPORATION

    Inventor： Hiroshi Takasaki ,  Masahiro Hiraoka ,  Hitoshi Saita ,  Kenichi Yoshida

    IPC: H01G4/33 ,  H01G4/232 ,  H01G4/005 ,  H01G4/40 ,  H01G7/06 ,  H01L49/02 ,  H01G4/30 ,  H01G4/012 ,  H01G4/12

    Abstract: A thin-film capacitor includes a capacitor section in which electrode layers and dielectric layers are alternately stacked and which includes a hole portion that extends to the electrode layer. In a cross-section which is perpendicular to a stacking surface of the capacitor section and which passes through the hole portion, a side surface of the hole portion extends along a reference line extending in a direction intersecting the stacking surface, the dielectric layer extends up to the reference line toward the hole portion, and a gap is formed between the side surface of the pair electrode layer and the reference line.

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