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    X-ray lithography mask
    11.
    发明授权
    X-ray lithography mask 失效
    X射线光刻掩模

    公开(公告)号：US3873824A

    公开(公告)日：1975-03-25

    申请号：US40241973

    申请日：1973-10-01

    Applicant: TEXAS INSTRUMENTS INC

    Inventor： BEAN KENNETH E ,  PADOVANI FRANCOIS A

    IPC: G03F1/22 ,  G21K1/10 ,  G01N21/34

    CPC classification number: G03F1/22 ,  G21K1/10

    Abstract: The disclosure relates to a mask for use in X-ray lithography wherein a window is provided for X-rays, a pattern being placed over the window which absorbs the X-rays along the pattern, thereby providing a mask to the X-rays in accordance with the pattern and causing the X-rays to strike a mask on a device at all points except where the X-rays have been masked. Photoresist systems which are responsive to X-rays are well known, these including polymethylmethacrylate. The mask is formed from a thin layer of silicon carbide with a ring of material supporting the silicon carbide, preferably silicon. The desired pattern is then formed on the silicon carbide, using a material which absorbs Xrays, such as gold. The mask is formed by utilizing a starting substrate such as silicon and depositing a thin layer of silicon carbide thereon. The silicon is then etched down to the silicon carbide at all points except for the perimeter of the silicon carbide or in segments such as quadrants to provide a support for the silicon carbide. The silicon carbide is thin and acts as a window to Xrays. An X-ray absorbing mask is then formed on the silicon carbide window to provide the final X-ray lithograph mask.

    Abstract translation: 本公开涉及一种用于X射线光刻的掩模，其中为X射线提供窗口，图案放置在窗口上，沿着图案吸收X射线，从而为X射线提供掩模 根据该图案，并且使X射线在除了X射线被掩蔽之外的所有点处在设备上打开掩模。 对X射线敏感的光刻胶系统是众所周知的，包括聚甲基丙烯酸甲酯。 掩模由具有支撑碳化硅，优选硅的材料环的碳化硅薄层形成。 然后使用吸收X射线的材料（例如金）在碳化硅上形成所需的图案。

    Integrated circuit fabrication
    12.
    发明授权
    Integrated circuit fabrication 失效

    公开(公告)号：US3620833A

    公开(公告)日：1971-11-16

    申请号：US3620833D

    申请日：1966-12-23

    Applicant: TEXAS INSTRUMENTS INC

    Inventor： GLEIM PAUL S ,  BEAN KENNETH E

    IPC: H01L21/00 ,  H01L21/762 ,  C23C13/04 ,  H01L1/00

    CPC classification number: H01L21/76297 ,  H01L21/00 ,  Y10S148/043 ,  Y10S148/085 ,  Y10S148/115 ,  Y10S148/122 ,  Y10S148/152 ,  Y10S438/974 ,  Y10S438/977

    Abstract: An integrated circuit structure having a plurality of monocrystalline semiconductor islands separated by a layer of dielectric insulation is fabricated by a method which begins with the formation of a plurality of nucleation sites upon a supported layer of insulating material. A single crystallite of semiconductor material is then vapor deposited at each of the nucleation sites. The crystallites are then covered by the vapor deposition of a second layer of dielectric material. The second layer of dielectric material is then supported by the deposition of a substrate material, followed by removal of the original supporting body to expose the first layer of insulating material, thereby providing a plurality of electrically isolated regions of single crystallite semiconductor material embedded in a suitable substrate. The structure is then completed by forming and interconnecting desired circuit components within the single crystallites.

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