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公开(公告)号：US12068175B2
公开(公告)日：2024-08-20
申请号：US17577143
申请日：2022-01-17
Applicant: Tokyo Electron Limited
Inventor： Kouji Ogura , Jun Nonaka , Takao Inada , Yoshinori Nishiwaki , Hiroshi Yoshida
IPC: H01L21/67
CPC classification number: H01L21/67086 , H01L21/67017
Abstract: A substrate processing method includes: generating a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide in a tank and circulating the mixture liquid through a circulation path that exits and returns to the tank, the circulation path including a back pressure valve; sending the mixture liquid to a processing bath through a liquid path diverging from the circulation path and positioned upstream from the back pressure valve; and supplying a silicon-containing compound aqueous solution to the mixture liquid generated in the generating. The back pressure valve is fully open in the generating and throttled in the sending. A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply.
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公开(公告)号：US10242889B2
公开(公告)日：2019-03-26
申请号：US14828579
申请日：2015-08-18
Applicant: Tokyo Electron Limited
Inventor： Jun Nonaka , Itaru Kanno
Abstract: Disclosed is a substrate liquid processing method. The method includes producing a processing liquid including deionized water, carbon dioxide, and ammonia, which has a PH of a predetermined value in a range of pH 5 to 9; and processing a substrate having a metal exposed, using the processing liquid.
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公开(公告)号：US10236192B2
公开(公告)日：2019-03-19
申请号：US14548453
申请日：2014-11-20
Applicant: Tokyo Electron Limited
Inventor： Jun Nonaka , Shogo Mizota , Tatsuya Nagamatsu , Daisuke Saiki , Kazuhiro Teraoka , Takashi Yabuta
IPC: H01L21/67
Abstract: A liquid processing apparatus of the present disclosure holds and rotate a substrate in a substrate holding unit, ejects an etching liquid while moving a main nozzle of a main nozzle unit between a first position where the etching liquid reaches a center of the substrate and a second position closer to a peripheral side of the substrate than the first position, and then, ejects the etching liquid to the substrate from a sub nozzle provided at a third position closer to the peripheral side of the substrate than the first position at an ejection flow rate higher than that from the main nozzle.
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14.发明授权公开(公告)号：US09897919B2
公开(公告)日：2018-02-20
申请号：US15227243
申请日：2016-08-03
Applicant: Tokyo Electron Limited
Inventor： Jun Nonaka
CPC classification number: G03F7/16 , G03F7/30 , H01L21/67017
Abstract: A substrate liquid treatment method includes: (a) rotating the substrate about the vertical axis; (b) supplying the treatment liquid to the rotating substrate from the second nozzle with a falling point of the treatment liquid supplied from the second nozzle moving from the central portion to the peripheral portion of the substrate, while supplying the treatment liquid to the central portion of the substrate from the first nozzle, (c) after (b), moving the second nozzle from the peripheral portion to the central portion of the substrate with the supplying of the treatment liquid from the second nozzle being stopped, while continuing supplying the treatment liquid to the central portion of the rotating substrate from the first nozzle; and (d) after (c), supplying the treatment liquid to the rotating substrate from the second nozzle.
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公开(公告)号：US11938524B2
公开(公告)日：2024-03-26
申请号：US17442137
申请日：2020-08-17
Applicant: Tokyo Electron Limited
Inventor： Jun Nonaka , Mitsunori Nakamori
IPC: B08B3/10
CPC classification number: B08B3/10
Abstract: A substrate processing apparatus includes a liquid processing tank, and a hydrophobizing gas supply unit. The liquid processing tank stores a processing liquid and dips a plurality of substrates in the processing liquid to liquid-process the plurality of substrates. The hydrophobizing gas supply unit supplies a gas of a hydrophobizing agent to the plurality of substrates after liquid processing thereof.
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Patent Agency Ranking
公开(公告)号：US11724235B2
公开(公告)日：2023-08-15
申请号：US16816379
申请日：2020-03-12
Applicant: Tokyo Electron Limited
Inventor： Jun Nonaka , Takao Inada , Kouji Ogura
IPC: B01F3/08 , B01F11/02 , B01F13/02 , B01F15/06 , B01F23/40 , B01F23/43 , B01F23/451 , B01F31/80 , B01F33/40 , B01F35/90 , B01F101/58
CPC classification number: B01F23/405 , B01F23/43 , B01F23/451 , B01F31/831 , B01F33/402 , B01F35/90 , B01F2035/99 , B01F2101/58
Abstract: A mixing apparatus includes a phosphoric acid aqueous solution supply, an additive supply, a tank, a phosphoric acid aqueous solution supply path and an additive supply path. The phosphoric acid aqueous solution supply is configured to supply a phosphoric acid aqueous solution. The additive supply is configured to supply an additive configured to suppress precipitation of a silicon oxide. The phosphoric acid aqueous solution supply path is configured to connect the phosphoric acid aqueous solution supply with the tank. The additive supply path is configured to connect the additive supply with the tank. The additive is supplied while fluidity is imparted to the phosphoric acid aqueous solution supplied from the phosphoric acid aqueous solution supply into the tank.
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17.发明授权公开(公告)号：US11282727B2
公开(公告)日：2022-03-22
申请号：US16658428
申请日：2019-10-21
Applicant: Tokyo Electron Limited
Inventor： Jun Nonaka
IPC: H01L21/67 , G05B19/418
Abstract: A control device of a substrate processing apparatus includes a reading unit, an estimation unit, a comparison unit, and a correction unit. The reading unit reads out a reference processing condition for processing a substrate. The estimation unit estimates an actual processing condition when the substrate is processed. The comparison unit compares the reference processing condition and the actual processing condition with each other. The correction unit corrects a processing condition for the substrate based on a comparison result in the comparison unit.
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18.发明授权公开(公告)号：US08956465B2
公开(公告)日：2015-02-17
申请号：US14344085
申请日：2013-01-11
Applicant: Tokyo Electron Limited
Inventor： Jun Nonaka
CPC classification number: H01L21/67051 , H01L21/02052 , H01L21/02057 , H01L21/67028 , Y10S134/902
Abstract: [Problem] To provide a liquid processing method with which, while alleviating a watermark occurring in the surface of a substrate, it is possible to hydrophobize the surface using a hydrophobing gas. [Solution] A substrate (W), retained in substrate retaining parts (21, 22, 23), is rotated and has a liquid compound supplied to the surface thereof, whereby a liquid process is carried out. Next, a rinse liquid is supplied to the surface of the substrate (W) while the substrate (W) is rotated, and the liquid compound is replaced with the rinse liquid. Next, supplying a hydrophobing gas for hydrophobizing the surface of the substrate (W) and supplying the rinse liquid to the surface of the substrate (W) after supplying the hydrophobing gas are repeated alternately, thus hydrophobizing the substrate (W). Next, the rinse liquid is removed by rotating the substrate (W), drying the substrate (W).
Abstract translation: [问题]提供一种液体处理方法，其中，在减轻在基材表面发生的水印的同时，可以使用疏水性气体使表面疏水化。 [解决方案]保持在基板保持部（21,22,23）中的基板（W）旋转，并且向其表面供给液体化合物，由此进行液体处理。 接下来，在旋转基板（W）的同时将冲洗液体供给到基板（W）的表面，并且用冲洗液更换液体化合物。 接下来，交替地重复供给用于疏水化基板（W）表面的疏水化气体，并且在供给疏水化气体之后将冲洗液供给到基板（W）的表面，从而使基板（W）疏水化。 接着，通过旋转基板（W），干燥基板（W）来除去冲洗液。
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公开(公告)号：US12033872B2
公开(公告)日：2024-07-09
申请号：US17326821
申请日：2021-05-21
Applicant: Tokyo Electron Limited
Inventor： Keita Hirase , Koji Ogura , Hiroshi Yoshida , Takashi Nagai , Jun Nonaka , Takumi Honda
IPC: H01L21/67 , H01L21/311
CPC classification number: H01L21/67057 , H01L21/31111 , H01L21/67017 , H01L21/67086
Abstract: A substrate processing apparatus includes: a processing container, a mixing device, a liquid feeding path, and a controller. The processing container processes a substrate by immersing the substrate in a processing liquid. The mixing device mixes a phosphoric acid aqueous solution and an additive, to produce a mixed liquid to be used as a raw material of the processing liquid. The liquid feeding path feeds the mixed liquid from the mixing device to the processing container. The controller controls the substrate processing apparatus. The controller performs a control to feed the mixed liquid from the mixing device to the processing container in which the substrate is immersed, after a phosphoric acid concentration of the mixed liquid is regulated from a first concentration to a second concentration higher than the first concentration. The first concentration is a concentration when the phosphoric acid aqueous solution is supplied to the mixing device.
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公开(公告)号：US11723259B2
公开(公告)日：2023-08-08
申请号：US17336657
申请日：2021-06-02
Applicant: Tokyo Electron Limited
Inventor： Koukichi Hiroshiro , Jun Nonaka , Kazuya Koyama , Mitsunori Nakamori
Abstract: A method of processing a substrate includes loading the substrate to which a processing liquid is adhered, inside a processing container, removing the processing liquid adhering to the substrate by supplying a first organic solvent to the loaded substrate, causing the substrate to be water-repellent by supplying a water repellent to the substrate from which the processing liquid has been removed, supplying a second organic solvent to the water-repellent substrate, and drying the substrate by volatilizing the second organic solvent adhering to the substrate.
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