公开(公告)号：US20210305056A1

公开(公告)日：2021-09-30

申请号：US17211393

申请日：2021-03-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehiko ORII ,  Nobuhiro TAKAHASHI

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/306

Abstract: An etching method is provided. In the etching method, a protective film-forming gas including an amine gas is supplied to a substrate having a surface on which a first film and a second film are formed, the first film and the second film having respective properties of being etched by an etching gas, and a protective film is formed to cover the first film such that the first film is selectively protected between the first film and the second film when the etching gas is supplied. Further, the second film is selectively etched by supplying the etching gas to the substrate after the protective film is formed.

公开(公告)号：US20130074281A1

公开(公告)日：2013-03-28

申请号：US13626997

申请日：2012-09-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuhiro TAKAHASHI ,  Keiko HADA

IPC: A47L5/16

CPC classification number: A47L9/00 ,  B08B5/02 ,  B08B5/04 ,  G01N1/2202 ,  G01N15/06 ,  G01N2001/2223 ,  G01N2015/0046

Abstract: A particle collecting apparatus is provided with a case, an ultrasonic generator, a gas supplying unit, a suction unit and a seal member. The case has one end, and defines a space at the one end. The ultrasonic generator is provided in the case, and generates ultrasonic waves towards the opening defined by the one end of the case. The gas supplying unit supplies gas to the space. The suction unit exhausts the space. The seal member has elasticity, and is provided at the one end so as to surround the opening.

Abstract translation: 颗粒收集装置设置有壳体，超声波发生器，气体供给单元，抽吸单元和密封构件。 案件有一端，并在一端定义一个空格。 超声波发生器设置在壳体中，并且朝向由壳体的一端限定的开口产生超声波。 气体供给单元向该空间供给气体。 抽吸单元排出空间。 密封构件具有弹性，并且在一端设置成围绕开口。

公开(公告)号：US20220262655A1

公开(公告)日：2022-08-18

申请号：US17670844

申请日：2022-02-14

Applicant: Tokyo Electron Limited

Inventor： Toshiki KANAKI ,  Nobuhiro TAKAHASHI ,  Megumi UMEMOTO

IPC: H01L21/67 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/04

Abstract: An etching method includes: forming a protective film by supplying a protective film forming gas including at least one of a compound including a hydroxyl group and water to a substrate including a surface on which a first film and a second film are formed, each of which has a property of being etched by an etching gas, wherein the protective film covers the first film such that the first film is selectively protected from among the first film and the second film when the etching gas is supplied; and selectively etching the second film by supplying the etching gas to the substrate in a state in which the protective film is formed.

公开(公告)号：US20210082710A1

公开(公告)日：2021-03-18

申请号：US17022777

申请日：2020-09-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuhiro TAKAHASHI ,  Kazuhito MIYATA ,  Yasuo ASADA

IPC: H01L21/306 ,  H01L21/02 ,  H01J37/32

Abstract: An etching method for performing side-etching of silicon germanium layers of a substrate having alternating silicon layers and the silicon germanium layers formed thereon is provided. The method includes modifying surfaces of residuals by supplying a plasmarized gas containing hydrogen to the residuals on exposed end surfaces of the silicon germanium layers, and performing side-etching on the silicon germanium layers by supplying a fluorine-containing gas to the silicon germanium layers.

公开(公告)号：US20200098575A1

公开(公告)日：2020-03-26

申请号：US16578795

申请日：2019-09-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuhiro TAKAHASHI ,  Yasuo ASADA

IPC: H01L21/302 ,  H01L21/02 ,  H01L21/285

Abstract: An etching method includes: preparing a substrate having SiGe or Ge and Si on a surface portion of the substrate; and selectively etching the SiGe or Ge with respect to the Si by supplying a process gas including a fluorine-containing gas and a hydrogen-containing gas to the substrate.

公开(公告)号：US20190206694A1

公开(公告)日：2019-07-04

申请号：US16327039

申请日：2017-07-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuhiro TAKAHASHI

IPC: H01L21/3065 ,  H01L49/02 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/67069 ,  H01L27/108 ,  H01L28/60 ,  H05H1/46

Abstract: There is provided an etching method which includes: preparing a target substrate having a silicon portion, a silicon nitride film and a silicon oxide film; and selectively etching the silicon portion with respect to the silicon nitride film and the silicon oxide film by supplying a fluorine-containing gas and an inert gas which stay in an excited state to the target substrate.

公开(公告)号：US20160086814A1

公开(公告)日：2016-03-24

申请号：US14784962

申请日：2014-03-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuhiro TAKAHASHI ,  Tetsuro TAKAHASHI ,  Shuji MORIYA ,  Masashi MATSUMOTO ,  Junichiro MATSUNAGA

IPC: H01L21/311

CPC classification number: H01L21/31116

Abstract: An etching method includes loading a target substrate W into a chamber 40, the target substrate W having a silicon nitride film formed thereon and at least one of a polysilicon film and a silicon oxide film formed adjacent to the silicon nitride film; supplying a fluorine (F)-containing gas and an O2 gas into the chamber 40, while at least the O2 gas is excited; and selectively etching the silicon nitride film with respect to at least one of the polysilicon film and the silicon oxide film using the F-containing gas and the O2 gas.

Abstract translation: 蚀刻方法包括将目标基板W装载到室40中，其上形成有氮化硅膜的目标基板W和与氮化硅膜相邻形成的多晶硅膜和氧化硅膜中的至少一个; 至少将O2气体激发，将含氟（F）的气体和O 2气体供给到室40中; 并且使用含F气体和O 2气体，相对于至少一个多晶硅膜和氧化硅膜选择性地蚀刻氮化硅膜。

公开(公告)号：US20130323915A1

公开(公告)日：2013-12-05

申请号：US13901712

申请日：2013-05-24

Applicant: Tokyo Electron Limited

Inventor： Katsuhiko KOMORI ,  Akinobu KAKIMOTO ,  Mitsuhiro OKADA ,  Nobuhiro TAKAHASHI

IPC: H01L21/02

CPC classification number: H01L21/02658 ,  C23C16/045 ,  C23C16/24 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/76224 ,  H01L21/76232

Abstract: A method of forming a silicon film includes a first film forming process, an etching process, a doping process, and a second film forming process. In the first film forming process, a silicon film doped with impurities containing boron is formed so as to embed a groove provided on an object to be processed. In the etching process, the silicon film formed in the first film forming process is etched. In the doping process, the silicon film etched in the etching process is doped with impurities containing boron. In the second film forming process, a silicon film doped with impurities containing boron is formed so as to embed the silicon film that is doped in the doping process.

Abstract translation: 形成硅膜的方法包括第一成膜工艺，蚀刻工艺，掺杂工艺和第二成膜工艺。 在第一成膜工艺中，形成掺杂含有杂质的硅的硅膜，以便嵌入设置在被处理物上的槽。 在蚀刻工艺中，蚀刻在第一成膜工艺中形成的硅膜。 在掺杂工艺中，在蚀刻工艺中蚀刻的硅膜掺杂含有硼的杂质。 在第二成膜工艺中，形成掺杂含有杂质的硅的硅膜，以便嵌入在掺杂工艺中掺杂的硅膜。

公开(公告)号：US20200312669A1

公开(公告)日：2020-10-01

申请号：US16825227

申请日：2020-03-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuhiro TAKAHASHI ,  Ayano HAGIWARA ,  Yasuo ASADA ,  Tatsuya YAMAGUCHI

IPC: H01L21/3065 ,  H01L21/308

Abstract: An etching method for etching a silicon-containing film formed in a substrate by supplying an etching gas to the substrate is provided. The method includes supplying an amine gas to the substrate, in which the silicon-containing film, a porous film, and a non-etching target film that is a film not to be etched but is etchable by the etching gas are sequentially formed adjacent to each other, so that amine is adsorbed onto walls of pores of the porous film. The method further includes supplying the etching gas for etching the silicon-containing film to the substrate in which the amine is adsorbed onto the walls of the pores of the porous film.

公开(公告)号：US20200312668A1

公开(公告)日：2020-10-01

申请号：US16821440

申请日：2020-03-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuji ASAKAWA ,  Nobuhiro TAKAHASHI

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/311 ,  C23C16/458 ,  C23C16/44 ,  C23C16/22

Abstract: A substrate etching apparatus for etching a substrate, the substrate etching apparatus includes a treatment container configured to accommodate a substrate, a stage on which the substrate is placed, the stage being disposed in the treatment container, a gas supply configured to supply a treatment gas from an upper space above the stage toward the stage, and a gas exhauster configured to evacuate an interior of the treatment container. The gas supply includes a central region facing a central part of the stage and an outer peripheral region having a same central axis as the central region and configured to surround the central region. The gas supply is capable of supplying the treatment gas to each of the central region and the outer peripheral region.