公开(公告)号：US20170110378A1

公开(公告)日：2017-04-20

申请号：US15300653

申请日：2015-10-03

Applicant: Toyo Tanso Co., Ltd.

Inventor： Satoshi Torimi ,  Norihito Yabuki ,  Satoru Nogami

IPC: H01L21/66 ,  H01L21/02

CPC classification number: H01L22/12 ,  H01L21/0201 ,  H01L21/02019 ,  H01L21/02024 ,  H01L21/0475 ,  H01L21/3065 ,  H01L29/1608

Abstract: This method for estimating the depth of latent scratches in SiC substrates includes an etching step, a measurement step, and an estimation step. In the etching step, a SiC substrate in which at least the surface is formed from single crystal SiC, and which has been subjected to machining, is subjected to heat treatment under Si atmosphere to etch the surface of the SiC substrate. In the measurement step, the surface roughness or the residual stress of the SiC substrate which has been subjected to the etching step is measured. In the estimation step, the depth of latent scratches or the presence or absence of latent scratches in the SiC substrate before the etching step are estimated on the basis of the results obtained in the measurement step.

公开(公告)号：US11261539B2

公开(公告)日：2022-03-01

申请号：US16495282

申请日：2018-03-20

Applicant: Toyo Tanso Co., Ltd.

Inventor： Satoshi Torimi ,  Yusuke Sudo ,  Masato Shinohara ,  Youji Teramoto ,  Takuya Sakaguchi ,  Satoru Nogami ,  Makoto Kitabatake

IPC: H01L21/02 ,  C30B25/18 ,  C30B29/36 ,  H01L29/34 ,  H01L29/16 ,  C30B25/20

Abstract: In a method for manufacturing a reformed SiC wafer 41 (a surface treatment method for a SiC wafer) having its surface that is reformed by processing an untreated SiC wafer 40 before formation of an epitaxial layer 42, the method includes a surface reforming step as described below. That is, the untreated SiC wafer 40 includes BPDs as dislocations parallel to an inside of a (0001) face, and TEDs. Property of the surface of the untreated SiC wafer 40 is changed so as to have higher rate in which portions having BPDs on the surface of the untreated SiC wafer 40 propagate as TEDs at a time of forming the epitaxial layer 42.

公开(公告)号：US20170345672A1

公开(公告)日：2017-11-30

申请号：US15527526

申请日：2015-11-17

Applicant: KWANSEI GAKUIN EDUCATIONAL FOUNDATION ,  TOYO TANSO CO., LTD.

Inventor： Tadaaki Kaneko ,  Koji Ashida ,  Yasunori Kutsuma ,  Satoshi Torimi ,  Masato Shinohara ,  Youji Teramoto ,  Norihito Yabuki ,  Satoru Nogami

IPC: H01L21/306 ,  H01L21/04 ,  C30B33/12 ,  H01L21/304 ,  C30B29/36

CPC classification number: H01L21/30621 ,  C30B29/36 ,  C30B33/12 ,  H01L21/0445 ,  H01L21/302 ,  H01L21/304

Abstract: Provided is a surface treatment method for a SiC substrate (40), the method being capable of controlling whether to generate a step bunching or the type of step bunching that is generated. In the surface treatment method in which the surface of the SiC substrate (40) is etched by heating the SiC substrate (40) under Si vapor pressure, an etching mode and an etching depth which are determined at least on the basis of an etching rate, are controlled to etch the SiC substrate (40), so that a surface pattern of the SiC substrate (40) after etching treatment is controlled.

公开(公告)号：US20170121848A1

公开(公告)日：2017-05-04

申请号：US15300617

申请日：2015-03-10

Applicant: TOYO TANSO CO., LTD.

Inventor： Satoshi Torimi ,  Norihito Yabuki ,  Satoru Nogami

IPC: C30B25/18 ,  C30B33/08 ,  H01L21/04 ,  C30B25/10 ,  H01L21/02 ,  C30B25/20 ,  C30B29/36

CPC classification number: C30B25/186 ,  C30B25/10 ,  C30B25/20 ,  C30B29/36 ,  C30B33/08 ,  H01L21/02019 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02661 ,  H01L21/0475 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3247 ,  H01L29/1608

Abstract: When a SiC substrate (40) after performing mechanical treatment is heat-treated under SiC atmosphere to etch the SiC substrate (40), the etching rate is controlled by adjusting the inert gas pressure around the periphery of the SiC substrate (40). As a result, when latent scratches or the like exist in the SiC substrate (40), the latent scratches or the like can be removed. Accordingly, the surface of the SiC substrate (40) does not become rough, even if epitaxial growth and heat treatment and the like are performed. This can manufacture high-quality SiC substrates.

公开(公告)号：US09570306B2

公开(公告)日：2017-02-14

申请号：US14435383

申请日：2013-11-15

Applicant: TOYO TANSO CO., LTD.

Inventor： Satoshi Torimi ,  Norihito Yabuki ,  Satoru Nogami

IPC: H01L21/04 ,  C30B29/36 ,  C30B33/12 ,  C30B31/22 ,  H01L21/3065 ,  C30B33/02 ,  C30B33/08 ,  H01L29/16

CPC classification number: H01L21/0445 ,  C30B29/36 ,  C30B31/22 ,  C30B33/02 ,  C30B33/08 ,  C30B33/12 ,  H01L21/3065 ,  H01L29/1608

Abstract: The present application aims to provide a surface treatment method that is able to accurately control the rate of etching a single crystal SiC substrate and thereby enables correct understanding of the amount of etching. In the surface treatment method, the single crystal SiC substrate is etched by a heat treatment performed under Si vapor pressure. At a time of the etching, inert gas pressure in an atmosphere around the single crystal SiC substrate is adjusted to control the rate of etching. Accordingly, correct understanding of the amount of etching is obtained.

Abstract translation: 本申请旨在提供一种表面处理方法，其能够精确地控制蚀刻单晶SiC衬底的速率，从而能够正确地理解蚀刻量。 在表面处理方法中，通过在Si蒸气压下进行的热处理蚀刻单晶SiC衬底。 在蚀刻时，调整在单晶SiC衬底周围的气氛中的惰性气体压力以控制蚀刻速率。 因此，获得对蚀刻量的正确理解。

公开(公告)号：US20150255314A1

公开(公告)日：2015-09-10

申请号：US14434864

申请日：2013-11-15

Applicant: TOYO TANSO CO., LTD.

Inventor： Satoshi Torimi ,  Norihito Yabuki ,  Satoru Nogami

IPC: H01L21/673 ,  H01L21/67 ,  H01L21/306

CPC classification number: H01L21/673 ,  C23C10/02 ,  C23C10/22 ,  C30B29/36 ,  C30B33/12 ,  C30B35/002 ,  F27B17/0025 ,  H01L21/046 ,  H01L21/302 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/6719 ,  H01L29/1608

Abstract: The present invention is to provide a storing container wherein Si does not drop onto a single crystal SiC substrate, and Si pressure distribution in an internal space can be made uniform. This storing container stores therein a single crystal SiC substrate to be etched by means of a heat treatment under Si vapor pressure. The storing container is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The tantalum silicide layer supplies Si to the internal space. Furthermore, the tantalum silicide layer is different from adhered Si, and does not melt and drop.

Abstract translation: 本发明提供一种储存容器，其中Si不会落在单晶SiC衬底上，并且内部空间中的Si压力分布可以均匀。 该储存容器通过在Si蒸气压下进行热处理而存储待蚀刻的单晶SiC衬底。 存储容器由钽金属形成，并且具有设置在内部空间侧的碳化钽层和设置在比碳化钽层更靠内部空间侧的一侧的硅化硅层。 硅化硅层将Si提供给内部空间。 此外，硅化硅层与附着的Si不同，不会熔融落下。

公开(公告)号：US10665485B2

公开(公告)日：2020-05-26

申请号：US15766191

申请日：2016-10-06

Applicant: Toyo Tanso Co., Ltd.

Inventor： Satoshi Torimi ,  Masato Shinohara ,  Norihito Yabuki ,  Satoru Nogami

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/302 ,  H01L21/04 ,  H01L21/687

Abstract: A heat treatment container (1) is provided with support members (6) for supporting a disc-shaped SiC substrate (2), which is an object, at a time of an etching treatment of the SiC substrate (2). Each of the support members (6) has an inclined surface (6F) for supporting a lower surface end (2E) of the SiC substrate (2), the inclined surface being inclined so as to increasingly approach the centerline of the SiC substrate (2) going downward. More specifically, each of the support members (6) is formed in a conical shape with a diameter that increases going downward, and a conical surface which is the peripheral surface of each supporting member forms the inclined surface (6F). A vertically-middle section of the inclined surface (6F) contacts the lower surface end (2E) of the SiC substrate (2).

公开(公告)号：US20200095703A1

公开(公告)日：2020-03-26

申请号：US16495282

申请日：2018-03-20

Applicant: Toyo Tanso Co., Ltd.

Inventor： Satoshi Torimi ,  Yusuke Sudo ,  Masato Shinohara ,  Youji Teramoto ,  Takuya Sakaguchi ,  Satoru Nogami ,  Makoto Kitabatake

IPC: C30B25/18 ,  H01L21/02 ,  H01L29/34 ,  H01L29/16 ,  C30B25/20 ,  C30B29/36

Abstract: In a method for manufacturing a reformed SiC wafer 41 (a surface treatment method for a SiC wafer) having its surface that is reformed by processing an untreated SiC wafer 40 before formation of an epitaxial layer 42, the method includes a surface reforming step as described below. That is, the untreated SiC wafer 40 includes BPDs as dislocations parallel to an inside of a (0001) face, and TEDs. Property of the surface of the untreated SiC wafer 40 is changed so as to have higher rate in which portions having BPDs on the surface of the untreated SiC wafer 40 propagate as TEDs at a time of forming the epitaxial layer 42.

公开(公告)号：US10014176B2

公开(公告)日：2018-07-03

申请号：US15527602

申请日：2015-11-17

Applicant: Toyo Tanso Co., Ltd.

Inventor： Norihito Yabuki ,  Satoshi Torimi ,  Satoru Nogami

IPC: H01L21/00 ,  H01L21/04 ,  H01L21/306

CPC classification number: H01L21/046 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3247 ,  H01L21/67115 ,  H01L21/67346 ,  H01L21/7602 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7813

Abstract: Provided is a SiC substrate treatment method for, with respect to a SiC substrate (40) that has, on its surface, grooves (41), activating ions while preventing roughening of the surface of the substrate. In the method, an ion activation treatment in which the SiC substrate (40) is heated under Si vapor pressure is performed to the SiC substrate (40) has, on its surface, an ion implantation region (46) in which ions have been implanted, and has the grooves (41) provided in a region including at least the ion implantation region (46), thereby ions that are implanted in the SiC substrate (40) is activated while etching the surface of the substrate.

公开(公告)号：US20170236905A1

公开(公告)日：2017-08-17

申请号：US15360498

申请日：2016-11-23

Applicant: TOYO TANSO CO., LTD.

Inventor： Satoshi Torimi ,  Masato Shinohara ,  Youji Teramoto ,  Norihito Yabuki ,  Satoru Nogami ,  Makoto Kitabatake

IPC: H01L29/16 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/04 ,  H01L23/544

CPC classification number: H01L29/1608 ,  H01L21/02008 ,  H01L21/02016 ,  H01L21/02019 ,  H01L21/0475 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/3065 ,  H01L23/544 ,  H01L2223/54433

Abstract: Provided is a method for manufacturing a thin SiC wafer by which a SiC wafer is thinned using a method without generating crack or the like, the method in which polishing after adjusting the thickness of the SiC wafer can be omitted. The method for manufacturing the thin SiC wafer 40 includes a thinning step. In the thinning step, the thickness of the SiC wafer 40 can be decreased to 100 μm or less by performing the Si vapor pressure etching in which the surface of the SiC wafer 40 is etched by heating the SiC wafer 40 after cutting out of an ingot 4 under Si vapor pressure.