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公开(公告)号:US20210184335A1
公开(公告)日:2021-06-17
申请号:US16997958
申请日:2020-08-20
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yen-Ping Wang , Chun-Lin Lu , Han-Ping Pu , Kai-Chiang Wu , Chung-Yi Hsu
Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes: patch antennas, encapsulated by a first encapsulant; a device die, vertically spaced apart from the patch antennas, and electrically coupled to the patch antennas; and at least one redistribution structure, disposed between the patch antennas and the device die, and including electromagnetic bandgap (EBG) structures laterally surrounding each of the patch antennas.
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公开(公告)号:US11004810B2
公开(公告)日:2021-05-11
申请号:US16714768
申请日:2019-12-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Kai-Chiang Wu , Chun-Lin Lu , Chao-Wen Shih , Han-Ping Pu , Nan-Chin Chuang
IPC: H01L23/66 , H01L23/538 , H01L21/48 , H01L21/56 , H01Q21/06 , H01Q1/22 , H01L23/31 , H01L21/683 , H01Q21/28 , H01Q1/40
Abstract: A semiconductor package structure including an encapsulation body, an RFIC chip, a first antenna structure, and a second antenna structure is provided. The RFIC chip may be embedded in the encapsulation body. The first antenna structure may be disposed at a lateral side of the RFIC chip, electrically connected to the RFIC chip, and include a first conductor layer and a plurality of first patches opposite to the first conductor layer. The second antenna structure may be stacked on the RFIC chip, electrically connected to the RFIC chip, and include a second conductor layer and a plurality of second patches opposite to the second conductor layer. The first patches and the second patches are located at a surface of the encapsulation body. A first distance between the first conductor layer and the first patches is different from a second distance between the second conductor layer and the second patches.
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公开(公告)号:US20200335439A1
公开(公告)日:2020-10-22
申请号:US16389992
申请日:2019-04-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yung-Ping Chiang , Chung-Shi Liu , Han-Ping Pu , Ming-Kai Liu , Ting-Chu Ko , Chang-Wen Huang , Yu-Sheng Hsieh , Ching-Yu Huang
IPC: H01L23/522 , H01L23/00 , H01L49/02 , H01L21/768 , H01L21/027 , H01L21/02 , H01L21/56
Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a semiconductor die, a molding compound, a polymer layer, a conductive trace, a conductive via and an inductor. The semiconductor die is laterally surrounded by the molding compound. The polymer layer covers the semiconductor die and the molding compound. The conductive trace, the conductive via and the inductor are embedded in the polymer layer. The conductive via extends from a top surface of the conductive trace to a top surface of the polymer layer. The inductor has a body portion extending horizontally and a protruding portion protruded from the body portion. A total height of the body and protruding portions is substantially equal to a sum of a thickness of the conductive trace and a height of the conductive via. The height of the body portion is greater than the thickness of the conductive trace.
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公开(公告)号:US10510693B2
公开(公告)日:2019-12-17
申请号:US15717940
申请日:2017-09-28
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Kai-Chiang Wu , Chun-Lin Lu , Chao-Wen Shih , Han-Ping Pu , Nan-Chin Chuang
Abstract: A semiconductor package structure including an encapsulation body, an RFIC chip, a first antenna structure, and a second antenna structure is provided. The RFIC chip may be embedded in the encapsulation body. The first antenna structure may be disposed at a lateral side of the RFIC chip, electrically connected to the RFIC chip, and include a first conductor layer and a plurality of first patches opposite to the first conductor layer. The second antenna structure may be stacked on the RFIC chip, electrically connected to the RFIC chip, and include a second conductor layer and a plurality of second patches opposite to the second conductor layer. The first patches and the second patches are located at a surface of the encapsulation body. A first distance between the first conductor layer and the first patches is different from a second distance between the second conductor layer and the second patches.
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公开(公告)号:US10381309B2
公开(公告)日:2019-08-13
申请号:US15965980
申请日:2018-04-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chuei-Tang Wang , Chung-Hao Tsai , Chen-Hua Yu , Chun-Lin Lu , Chao-Wen Shih , Han-Ping Pu , Kai-Chiang Wu , Albert Wan
IPC: H01L23/538 , H01L23/498 , H01L23/28 , H01L25/065 , H01L25/00
Abstract: A package structure includes a first redistribution layer, a second redistribution layer, at least one semiconductor chip, an insulating encapsulation, a protection layer, and at least one connecting module. The at least one semiconductor chip is located between and electrically connected to the first redistribution layer and the second redistribution layer. The insulating encapsulation encapsulates the at least one semiconductor chip. The protection layer is disposed on and partially covers the first redistribution layer, wherein the first redistribution layer is located between the at least one semiconductor chip and the protection layer. The at least one connecting module connects to the first redistribution layer and is electrically connected to the at least one semiconductor chip through the first redistribution layer, wherein the at least one connecting module comprises a plurality of pins, and the at least one connecting module is mounted onto the first redistribution layer by the protection layer and is accessibly exposed by the protection layer.
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公开(公告)号:US12165985B2
公开(公告)日:2024-12-10
申请号:US17818625
申请日:2022-08-09
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chen-Hua Yu , Hui-Jung Tsai , Hung-Jui Kuo , Chung-Shi Liu , Han-Ping Pu , Ting-Chu Ko
IPC: H01L21/48 , H01L21/56 , H01L21/683 , H01L23/00 , H01L23/31 , H01L23/538
Abstract: In accordance with some embodiments a via is formed over a semiconductor device, wherein the semiconductor device is encapsulated within an encapsulant 129. A metallization layer and a second via are formed over and in electrical connection with the first via, and the metallization layer and the second via are formed using the same seed layer. Embodiments include fully landed vias, partially landed vias in contact with the seed layer, and partially landed vias not in contact with the seed layer.
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公开(公告)号:US11894299B2
公开(公告)日:2024-02-06
申请号:US17188787
申请日:2021-03-01
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chao-Wen Shih , Chen-Hua Yu , Han-Ping Pu , Hsin-Yu Pan , Hao-Yi Tsai , Sen-Kuei Hsu
IPC: H01L23/52 , H01L23/525 , H01L23/552 , H01L23/00 , H01L23/522 , H01L23/532 , H01L23/29 , H01L23/31 , H01L21/56 , H01L23/528 , H01L21/768
CPC classification number: H01L23/525 , H01L21/56 , H01L23/293 , H01L23/3192 , H01L23/5225 , H01L23/5329 , H01L23/552 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/14 , H01L21/76807 , H01L21/76816 , H01L21/76885 , H01L23/5286 , H01L24/13 , H01L2224/0348 , H01L2224/03462 , H01L2224/0401 , H01L2224/05008 , H01L2224/05009 , H01L2224/05022 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05548 , H01L2224/05569 , H01L2224/05572 , H01L2224/11622 , H01L2224/13022 , H01L2224/13023 , H01L2224/13024 , H01L2224/16104 , H01L2224/03462 , H01L2924/00014
Abstract: A method includes forming a dielectric layer over a contact pad of a device, forming a first polymer layer over the dielectric layer, forming a first conductive line and a first portion of a second conductive line over the first polymer layer, patterning a photoresist to form an opening over the first portion of the second conductive feature, wherein after patterning the photoresist the first conductive line remains covered by photoresist, forming a second portion of the second conductive line in the opening, wherein the second portion of the second conductive line physically contacts the first portion of the second conductive line, and forming a second polymer layer extending completely over the first conductive line and the second portion of the second conductive line.
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公开(公告)号:US11705409B2
公开(公告)日:2023-07-18
申请号:US16916066
申请日:2020-06-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Albert Wan , Ching-Hua Hsieh , Chao-Wen Shih , Han-Ping Pu , Meng-Tse Chen , Sheng-Hsiang Chiu
IPC: H01L23/66 , H01L23/522 , H01L23/31 , H01L21/56
CPC classification number: H01L23/66 , H01L21/565 , H01L23/3114 , H01L23/5226 , H01L2223/6677
Abstract: A semiconductor device including a chip package, a dielectric structure, and a first antenna pattern is provided. The dielectric structure is disposed on the chip package and includes a cavity and a vent in communication with the cavity. The first antenna pattern is disposed on the dielectric structure, wherein the chip package is electrically coupled to the first antenna pattern, and the cavity of the dielectric structure is disposed between the chip package and the first antenna pattern.
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公开(公告)号:US11424197B2
公开(公告)日:2022-08-23
申请号:US16421497
申请日:2019-05-24
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chuei-Tang Wang , Chung-Hao Tsai , Chen-Hua Yu , Chun-Lin Lu , Han-Ping Pu , Kai-Chiang Wu
IPC: H01L23/66 , H01L21/56 , H01L23/498 , H01L23/31 , H01L23/00 , H01L21/48 , H01L23/552
Abstract: A package includes a semiconductor package including a semiconductor die and a first insulating encapsulation, a substrate, and a second insulating encapsulation. The first insulating encapsulation encapsulates the semiconductor die. The substrate includes a redistribution circuitry, wherein the substrate is electrically coupled to the semiconductor package through the redistribution circuitry. The second insulating encapsulation is disposed on and partially covers the substrate, wherein the substrate is sandwiched between the semiconductor package and the second insulating encapsulation.
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公开(公告)号:US20200152570A1
公开(公告)日:2020-05-14
申请号:US16706805
申请日:2019-12-08
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chun-Lin Lu , Han-Ping Pu , Kai-Chiang Wu , Nan-Chin Chuang
IPC: H01L23/522 , H01L23/498 , H01L23/528 , H01L23/00
Abstract: An integrated fan-out (InFO) package includes a first redistribution structure, a die, an encapsulant, a plurality of first through interlayer vias (TIV), a second redistribution structure, an insulating layer, a supporting layer, and a plurality of conductive patches. The die is disposed on the first redistribution structure. The encapsulant encapsulates the die. The first TIVs are embedded in the encapsulant. The second redistribution structure is disposed on the die, the first TIVs, and the encapsulant. The first redistribution structure is electrically connected to the second redistribution structure through the first TIVs. The insulating layer is disposed on the first redistribution structure opposite to the die and includes a plurality of air gaps. The supporting layer is over the insulating layer. The conductive patches are over the supporting layer. Locations of the conductive patches correspond to locations of the air gaps of the insulating layer.
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