摘要:
An insulating film for semiconductors which has excellent adhesion to films formed by CVD and is useful as a dielectric film in semiconductor devices and the like is provided. The insulating film is obtained by a method comprising:(A) a step of subjecting a substrate to at least either of (A-1) at least one treatment selected from the group consisting of an ultraviolet irradiation treatment, an oxygen plasma treatment, a nitrogen plasma treatment, a helium plasma treatment, an argon plasma treatment, a hydrogen plasma treatment and an ammonia plasma treatment, and (A-2) a treatment with at least one of alkoxysilane compound having a reactive group and a product of the hydrolysis and condensation thereof; and(B) a step of applying a composition for film formation which comprises an organic solvent and either or both of at least one compound selected from the group consisting of compounds represented by the general formulae (1) to (4) as described hereinabove, and a hydrolysis/condensation product obtained by hydrolyzing and condensing the at least one compound, to the substrate and heating the resulting coating.
摘要:
A stacked film for semiconductor having superior adhesion to a coating film formed by a CVD process in, for example, semiconductor devices, an insulating film having the stacked film and a substrate for semiconductor using the insulating film are disclosed. The stacked film comprises (A) a film of an organic compound having a carbon content of 60% by weight or more and (B) a film prepared by heating a hydrolytic condensate obtained by hydrolysis and condensation of at least one compound selected from the group consisting of specific compounds represented by the general formulae (51) to (54) described hereinabove.
摘要:
A composition for film formation which comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one silane compound selected from the group consisting of compounds represented by the formula (1), compounds represented by the formula (2), and compounds represented by the formula (3) in the presence of water and an ammonium compound, and (B) an organic solvent.
摘要:
A composition for film formation which, when used in the production of semiconductor devices and the like, can give interlayer insulating films which differ little in dielectric constant even when obtained through curing under different conditions and have excellent adhesion to substrates, a process for producing the composition, and a silica-based film obtained from the composition. The composition for film formation comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing (A-1) at least one compound selected from the group consisting of compounds represented by the following formula (1), compounds represented by the following formula (2), and compounds represented by the following formula (3), and (A-2) at least one compound represented by the following formula (4), in the presence of a catalyst and water; and (B) an organic solvent.
摘要:
A composition for film formation which comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one compound selected from the group consisting of (A-1) compounds represented by the following formula (1) RaSi(OR1)4-a (1) (A-2) compounds represented by the following formula (2) Si(OR2)4 (2) and (A-3) compounds represented by the following formula (3) R3b(R4O)3-bSi—(R7)d—Si(OR5)3-cR6c (3) (B) at least one member selected from the group consisting of compounds of the metals in Groups IA and IIA of the periodic table; and (C) an organic solvent. A method for film formation using the composition and a silica-based film obtained by the method are also disclosed.
摘要:
The object of the present invention is to provide an electrochemical device, by which short circuit between electrode sheets can be prevented even when the electrode sheets come into contact with each other due to misregistration upon folding of the electrode sheets.The electrochemical device of the present invention is an electrochemical device having a electrode unit with a pair of band-like electrode sheets respectively folded so as to be alternately stacked in a state that the following respective electrode layers come into no contact with each other, wherein the pair of the electrode sheets each have a band-like current collector, a plurality of electrode layers respectively formed on plane regions surrounded by peripheral edge portions and folding edge portions in at least one surface of the current collector, and insulating films formed on respective both surfaces of the peripheral edge portions and folding edge portions in the current collector.
摘要:
Carrier polymer particles comprising organic polymer particles having a particle diameter of 0.1 to 20 micrometers and a saccharide with which the surface of the organic polymer particles is covered, the organic polymer particles and the saccharide being chemically bonded.
摘要:
A composition includes a curing agent and a silicon-containing polymer. The silicon-containing polymer includes a structural unit (A1) and a structural unit (A2). The structural unit (A1) is shown by a formula (1), in which each of R1 represents a monovalent hydrocarbon group having 1 to 6 carbon atoms, each of X represents a divalent hydrocarbon group having 1 to 7 carbon atoms, and n is an integer from 1 to 6. The structural unit (A2) is shown by a formula (2), in which R2 represents a monovalent hydrocarbon group having 1 to 6 carbon atoms, R3 represents a monovalent hydrocarbon group having 1 to 6 carbon atoms, a halogen atom, or a reactive functional group, and m is a positive integer. The structural unit (A1) and the structural unit (A2) have a weight ratio (A1):(A2) of 4:96 to 70:30.
摘要:
A biological substance related article includes a coating formed by causing a biological substance adsorption preventive coating composition to come in contact with a surface of the biological substance related article and heating the composition, the biological substance adsorption preventive coating composition including: (A) a copolymer obtained by copolymerizing raw material monomers including a monomer A1 shown by the following general formula (1) and an active hydrogen group-containing monomer A2; (B) a crosslinking agent reactive with an active hydrogen group; and (C) a solvent. CH2═CR3COOR1OR2 (1) (R1 represents an alkylene group having 1 to 4 carbon atoms, R2 represents an alkyl group having 1 to 4 carbon atoms, and R3 represents a hydrogen atom or a methyl group).
摘要:
A dielectric film capacitor includes a lower electrode having an opening and formed of a material including platinum, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film. The planar area of the lower electrode is 50% or more of the area of a formation region of the dielectric film. A dielectric film capacitor includes a lower electrode formed of a material including platinum and having a thickness of 10 to 100 nm, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film.