公开(公告)号：US20050230829A1

公开(公告)日：2005-10-20

申请号：US11081658

申请日：2005-03-17

申请人： Yuji Watanabe ,  Mitsuaki Katagiri ,  Hisashi Tanie ,  Atsushi Nakamura ,  Tomohiko Sato

发明人： Yuji Watanabe ,  Mitsuaki Katagiri ,  Hisashi Tanie ,  Atsushi Nakamura ,  Tomohiko Sato

IPC分类号： H05K1/02 ,  H01L21/56 ,  H01L21/60 ,  H01L23/12 ,  H01L23/31 ,  H01L23/48 ,  H01L25/065 ,  H01L25/10 ,  H01L25/18 ,  H05K1/11 ,  H05K3/34

CPC分类号： H05K1/111 ,  H01L21/563 ,  H01L23/3114 ,  H01L24/48 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/73203 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/01087 ,  H01L2924/15311 ,  H01L2924/181 ,  H05K2201/09281 ,  H05K2201/094 ,  H05K2201/10734 ,  Y02P70/611 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is provided with a semiconductor package 2 and a package substrate 5 having lands 8 that electrically connect by way of solder bumps 4 to the semiconductor package 2. A plurality of columns, in each of which a multiplicity of lands 8 are arranged, are formed on the package substrate 5. At least one of the lands 8 that make up columns that are located closest to each of the main sides that make up the outer edges of the semiconductor package has an interconnection 9 that extends from the land 8 along the surface of the package substrate. The interconnection 9 is formed such that the part that contacts the land 8 is located closer to a line that passes through the center of the land 8 and that is orthogonal to a line that connects the center of the land 8 with the center of the semiconductor package 2 than to the line that connects the center of the land 8 with the center of the semiconductor package 2.

摘要翻译： 半导体器件设置有半导体封装2和封装衬底5，封装衬底5具有通过焊料凸点4电连接到半导体封装2的焊盘8。 在封装基板5上形成有多个列，其中布置有多个焊盘8。 构成最靠近构成半导体封装的外边缘的每个主侧的列的焊盘8中的至少一个具有从焊盘8沿着封装基板的表面延伸的互连9。 互连9形成为使得接触焊盘8的部分更靠近通过焊盘8的中心的线并且与连接焊盘8的中心与半导体的中心的线垂直的线 封装2，而不是将焊盘8的中心与半导体封装2的中心连接的线。

公开(公告)号：US20050116654A1

公开(公告)日：2005-06-02

申请号：US10998002

申请日：2004-11-29

申请人： Hideo Sato ,  Tomohiko Sato ,  Masahiro Maki ,  Takayuki Nakao

发明人： Hideo Sato ,  Tomohiko Sato ,  Masahiro Maki ,  Takayuki Nakao

IPC分类号： G02F1/133 ,  G09G3/10 ,  G09G3/20 ,  G09G3/36 ,  H04N5/66

CPC分类号： G09G3/3688 ,  G09G3/3614 ,  G09G2310/0259 ,  G09G2310/027

摘要： Gamma correction of a video signal voltage applied to respective pixels of a display device can be accomplished without modulating a ramp voltage. The display device includes a common voltage generating circuit which selectively outputs a high-potential-side common voltage or a low-potential-side common voltage to common electrodes in response to an alternating signal, a data storage circuit, a reference data generating circuit which a ramp voltage generating circuit, a plurality of comparing circuits which compare data stored in the data storage circuit and the reference data generated by the reference data generating circuit, and a plurality of sampling circuits which sample the ramp voltage generated by the ramp voltage generating circuit in response to comparison results of the comparing circuits and output the sampled ramp voltage as a video signal voltage to respective video lines. The reference data generated by the reference data generating circuit is changed non-linearly with respect to time.

摘要翻译： 可以在不调制斜坡电压的情况下实现施加到显示装置的各个像素的视频信号电压的伽马校正。 显示装置包括：公共电压发生电路，其响应于交变信号选择性地向公共电极输出高电位侧公共电压或低电位侧公共电压;数据存储电路，参考数据生成电路， 斜坡电压产生电路，将数据存储电路中存储的数据与由基准数据产生电路产生的参考数据进行比较的多个比较电路，以及对由斜坡电压产生电路产生的斜坡电压进行采样的多个采样电路 响应于比较电路的比较结果，并将采样的斜坡电压作为视频信号电压输出到各个视频线。 由参考数据产生电路产生的参考数据相对于时间非线性地改变。

公开(公告)号：US06756661B2

公开(公告)日：2004-06-29

申请号：US09800503

申请日：2001-03-08

申请人： Kensuke Tsuneda ,  Toshio Sugano ,  Seiichiro Tsukui ,  Kouji Nagaoka ,  Tomohiko Sato

发明人： Kensuke Tsuneda ,  Toshio Sugano ,  Seiichiro Tsukui ,  Kouji Nagaoka ,  Tomohiko Sato

IPC分类号： H01L23495

CPC分类号： H01L23/49811 ,  H01L23/5387 ,  H01L25/0652 ,  H01L25/0655 ,  H01L2224/50

摘要： A memory TCP loaded with four chips (1-bank 16-bit type) is constructed by a tape of one two-layer wiring layer structure, four chips mounted to this tape, etc. Common signal terminals are arranged on one set of two opposed sides, and an independent signal terminal is arranged on another side. The common signal terminals on the two sides are electrically connected to each other common signal wiring. Further, in a DIMM in which this memory TCP is mounted to front and rear sides of a substrate, plural external terminals are formed on one long side of the rectangular substrate, and the memory TCP is mounted such that the independent signal terminal of the memory TCP is arranged along an arranging direction of these external terminals.

摘要翻译： 装载有四个芯片（1组16位型）的存储器TCP由一层双层布线层结构的磁带，安装在该磁带上的四个芯片等构成。公共信号端子布置在一组两个相对的 侧，另一侧设置独立的信号端子。 两侧的公共信号端子彼此电连接公共信号线。 此外，在将该存储器TCP安装到基板的前侧和后侧的DIMM中，在矩形基板的一个长边上形成有多个外部端子，并且安装存储器TCP，使得存储器的独立信号端子 沿着这些外部端子的排列方向布置TCP。

公开(公告)号：US06635589B2

公开(公告)日：2003-10-21

申请号：US09286999

申请日：1999-04-07

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Mitsunori Sakama ,  Tomohiko Sato ,  Satoshi Teramoto ,  Shigefumi Sakai

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Mitsunori Sakama ,  Tomohiko Sato ,  Satoshi Teramoto ,  Shigefumi Sakai

IPC分类号： H01L2142

CPC分类号： H01L21/28158 ,  C23C14/58 ,  C23C16/56 ,  H01L29/66757 ,  Y10S438/909 ,  Y10S438/91 ,  Y10S438/958

摘要： Silicon oxide films which are good as gate insulation films are formed by subjecting a silicon oxide film which has been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700° C. in a dinitrogen monoxide atmosphere, or in an NH3 or N2H4 atmosphere, while irradiating with ultraviolet light, reducing the hydrogen and carbon contents in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular. Furthermore, silicon oxide films which are good as gate insulating films have been formed by subjecting silicon oxide films which have been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700° C. in an N2O atmosphere (or hydrogen nitride atmosphere) while irradiating with ultraviolet light, and then carrying out a heat treatment at 300-700° C. in a hydrogen nitride atmosphere (N2O atmosphere), and reducing the amount of hydrogen and carbon in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular.

摘要翻译： 作为栅极绝缘膜良好的氧化硅膜通过在300-700℃下通过PVD法或CVD法对形成在包含硅膜的有源层上的氧化硅膜进行热处理而形成。 在一氧化二氮气氛中，或在NH 3或N 2 H 4气氛中，同时用紫外线照射，降低氧化硅膜中的氢和碳含量，并将氮引入与硅膜的边界。 此外，作为栅极绝缘膜良好的氧化硅膜已经通过利用PVD法或CVD法在由硅膜的活性层上形成的氧化硅膜在300-700°的温度下进行热处理而形成 在氮氧化物气氛（N 2 O气氛）中在N2O气氛（或氮化氢气氛）中照射紫外线，然后在300-700℃下进行热处理，并减少氢和碳的量 在氧化硅膜中，特别是将氮引入与硅膜的边界。

公开(公告)号：US06445371B1

公开(公告)日：2002-09-03

申请号：US09588665

申请日：2000-06-06

申请人： Toshio Miyazawa ,  Tomohiko Sato

发明人： Toshio Miyazawa ,  Tomohiko Sato

IPC分类号： G09G336

CPC分类号： G09G3/3688 ,  G09G3/3614 ,  G09G3/3648 ,  G09G3/3659 ,  G09G2300/0408 ,  G09G2310/027 ,  G09G2310/0297 ,  G09G2320/0276 ,  G09G2352/00

摘要： A liquid crystal display device includes plural video signal input parts which supply pixel drive voltages to the respective video signal lines of a liquid crystal display device, and each of the video signal input parts includes a field-effect transistor, a first part which sets a voltage value of a control electrode of the field-effect transistor to a voltage value obtained by correcting a common pixel drive voltage by a threshold voltage of the field-effect transistor, a second part which sets the voltage value of the control electrode of the field-effect transistor to a voltage obtained by adding a video signal voltage to the voltage value corrected by the first part, and a third part which supplies a voltage obtained by adding the video signal voltage to the common pixel drive voltage, to the video signal line as well as to the field-effect transistor, the voltage value of whose control electrode is set by the second part to the voltage obtained by adding the video signal voltage to the voltage value corrected by the first part. This construction prevents the difference in offset level from occurring in the pixel drive voltage to be supplied to the respective video signal lines, owing to a shift of the threshold value of the field-effect transistor.

摘要翻译： 一种液晶显示装置，具有向液晶显示装置的各视频信号线供给像素驱动电压的多个视频信号输入部，各视频信号输入部包括场效应晶体管，第一部分， 场效应晶体管的控制电极的电压值为将公共像素驱动电压校正为场效应晶体管的阈值电压而得到的电压值，设定场的控制电极的电压值的第二部分 将晶体管效应为通过将视频信号电压加到由第一部分校正的电压值而获得的电压，以及将通过将视频信号电压加到公共像素驱动电压而获得的电压的第三部分提供给视频信号线 以及场效应晶体管，其控制电极的电压值由第二部分设定为通过将视频信号电压 到由第一部分校正的电压值。 由于场效应晶体管的阈值的偏移，这种结构防止了像素驱动电压中的偏移电平的差异被提供给各个视频信号线。

公开(公告)号：US5970384A

公开(公告)日：1999-10-19

申请号：US510288

申请日：1995-08-02

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Mitsunori Sakama ,  Tomohiko Sato ,  Satoshi Teramoto ,  Shigefumi Sakai

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Mitsunori Sakama ,  Tomohiko Sato ,  Satoshi Teramoto ,  Shigefumi Sakai

IPC分类号： H01L21/316 ,  C23C14/58 ,  C23C16/56 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8234

CPC分类号： H01L21/28158 ,  C23C14/58 ,  C23C16/56 ,  H01L29/66757 ,  Y10S438/909 ,  Y10S438/91 ,  Y10S438/958

摘要： Silicon oxide films which are good as gate insulation films are formed by subjecting a silicon oxide film which has been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700.degree. C. in a dinitrogen monoxide atmosphere, or in an NH.sub.3 or N.sub.2 H.sub.4 atmosphere, while irradiating with ultraviolet light, reducing the hydrogen and carbon contents in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular. Furthermore, silicon oxide films which are good as gate insulating films have been formed by subjecting silicon oxide films which have been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700.degree. C. in an N.sub.2 O atmosphere (or hydrogen nitride atmosphere) while irradiating with ultraviolet light, and then carrying out a heat treatment at 300-700.degree. C. in a hydrogen nitride atmosphere (N.sub.2 O atmosphere), and reducing the amount of hydrogen and carbon in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular.

摘要翻译： 作为栅极绝缘膜良好的氧化硅膜通过在300-700℃下通过PVD法或CVD法将形成在包含硅膜的有源层上的氧化硅膜进行热处理而形成。 在一氧化二氮气氛中，或在NH 3或N 2 H 4气氛中，同时用紫外线照射，降低氧化硅膜中的氢和碳含量，并将氮引入与硅膜的边界。 此外，作为栅极绝缘膜良好的氧化硅膜已经通过利用PVD法或CVD法在包含硅膜的有源层上形成的氧化硅膜在300-700℃下进行热处理而形成 在氮氧化物气氛（或氮气氛围）中，用紫外线照射，然后在氮气气氛（N2O氛围）中在300-700℃下进行热处理，并减少氢和碳的量 在氧化硅膜中，特别是将氮引入与硅膜的边界。

公开(公告)号：US08466867B2

公开(公告)日：2013-06-18

申请号：US12828432

申请日：2010-07-01

申请人： Werapong Jarupoonphol ,  Takeya Takeuchi ,  Tomohiko Sato

发明人： Werapong Jarupoonphol ,  Takeya Takeuchi ,  Tomohiko Sato

IPC分类号： G09G3/36

CPC分类号： G09G3/3655 ,  G09G3/3614 ,  G09G2310/08 ,  G09G2320/0247

摘要： A liquid crystal display device is provided, which may reduce flicker in all display gray levels. The liquid crystal display device includes a scan line drive circuit, a signal line drive circuit and a common connection line drive circuit. The common connection line drive circuit applies a voltage, the voltage having polarity opposite to polarity of the signal line, to a common connection line corresponding to a liquid crystal element as a selection object in a write period for writing into the liquid crystal element as a selection object, and applies one or multiple voltages, each voltage having a value different from a center value between an upper limit value and a lower limit value of voltages applied to the common connection lines in the write period, to the common connection lines in a holding period after writing into the liquid crystal element as a selection object is performed.

摘要翻译： 提供了一种可以减少所有显示灰度级闪烁的液晶显示装置。 液晶显示装置包括扫描线驱动电路，信号线驱动电路和公共连接线驱动电路。 公共连接线路驱动电路将与极性相反的电压作为选择对象施加到与液晶元件对应的公共连接线上，该写入期间写入液晶元件为 选择对象，并且施加一个或多个电压，每个电压具有不同于在写入周期中施加到公共连接线的电压的上限值和下限值之间的中心值的值到一个或多个电压中的公共连接线 写入作为选择对象的液晶元件之后的保持期间被执行。

公开(公告)号：USD662621S1

公开(公告)日：2012-06-26

申请号：US29398712

申请日：2011-08-03

申请人： Junichiro Yamamoto ,  Shigeru Osawa ,  Yuichiro Takahara ,  Tomohiko Sato

设计人： Junichiro Yamamoto ,  Shigeru Osawa ,  Yuichiro Takahara ,  Tomohiko Sato

公开(公告)号：USD628723S1

公开(公告)日：2010-12-07

申请号：US29366640

申请日：2010-07-28

申请人： Junichiro Yamamoto ,  Masao Segawa ,  Makoto Sakai ,  Tomohiko Sato

设计人： Junichiro Yamamoto ,  Masao Segawa ,  Makoto Sakai ,  Tomohiko Sato

公开(公告)号：US07713138B2

公开(公告)日：2010-05-11

申请号：US12214380

申请日：2008-06-18

申请人： Tomohiko Sato ,  Sunao Umemura ,  Yutaka Kawata ,  Mitsuhiro Saso

发明人： Tomohiko Sato ,  Sunao Umemura ,  Yutaka Kawata ,  Mitsuhiro Saso

IPC分类号： A63B53/04

CPC分类号： A63B53/0466 ,  A63B60/52 ,  A63B2053/0433 ,  A63B2053/0437 ,  A63B2225/01

摘要： A wood type club is provided. A toe-side part and a heel-side part located between the crown part and the sole part of the head are provided with at least one concave groove opened outward in a horizontal direction and extending from the face part to the back part in a longitudinal direction to guide an air stream to the head in a swing action; and a whole or part of the concave groove has a curved part bulging outwardly so that an angle in which a concave groove bottom formed from an inlet of the concave groove to an inside thereof is inclined inward with respect to a line perpendicular to the face part is smaller than an angle in which a line connecting an inlet of the concave groove bottom and an outlet thereof is inclined inward with respect to the line perpendicular to the face part.

摘要翻译： 提供木制俱乐部。 位于头部的顶部部分和鞋底部分之间的脚趾侧部分和跟部侧部分设置有至少一个沿水平方向向外开口的凹槽，并从纵向部分向后部延伸 将空气流引导到头部的方向; 并且所述凹槽的全部或一部分具有向外凸出的弯曲部分，使得从所述凹槽的入口到其内部形成的凹槽底部相对于垂直于所述面部部分的线向内倾斜的角度 小于连接凹槽底部的入口和其出口的线相对于垂直于面部部分的线向内倾斜的角度。