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    Semiconductor pressure sensor having strain gauges and stress balance film
    12.
    发明授权
    Semiconductor pressure sensor having strain gauges and stress balance film 有权
    具有应变计和应力平衡薄膜的半导体压力传感器

    公开(公告)号：US06184561B2

    公开(公告)日：2001-02-06

    申请号：US09322033

    申请日：1999-05-28

    申请人： Hiroaki Tanaka ,  Inao Toyoda ,  Yasutoshi Suzuki

    发明人： Hiroaki Tanaka ,  Inao Toyoda ,  Yasutoshi Suzuki

    IPC分类号： H01L2982

    CPC分类号： G01L9/0042 ,  G01L9/0054 ,  G01L9/065 ,  H01L29/84

    摘要： In a semiconductor pressure sensor having a diaphragm portion and strain gauges on the diaphragm portion, Al stress balance films are provided around the diaphragm portion to balance changes in stress of the strain gauges, which are produced by a change in temperature. As a result, sensor output is prevented from varying due to the change in temperature.

    摘要翻译： 在隔膜部分具有隔膜部分和应变计的半导体压力传感器中，在隔膜部分周围设置有Al应力平衡膜，以平衡由温度变化产生的应变仪的应力变化。 结果，由于温度的变化，防止传感器输出变化。

    Compact pressure sensor with high corrosion resistance and high accuracy
    13.
    发明授权
    Compact pressure sensor with high corrosion resistance and high accuracy 有权
    紧凑型压力传感器，具有高耐腐蚀性和高精度

    公开(公告)号：US07168326B2

    公开(公告)日：2007-01-30

    申请号：US11079475

    申请日：2005-03-15

    申请人： Inao Toyoda ,  Hiroaki Tanaka ,  Ichiharu Kondo ,  Makoto Totani

    发明人： Inao Toyoda ,  Hiroaki Tanaka ,  Ichiharu Kondo ,  Makoto Totani

    IPC分类号： F02P5/00

    CPC分类号： B60C23/0408 ,  G01L9/0055 ,  G01L19/0069 ,  G01L19/0627 ,  G01L19/147 ,  G01L23/24

    摘要： A pressure sensor mainly includes a sensor chip, a circuit chip, and a substrate. The sensor chip is configured to generate an electrical signal representative of a pressure being sensed and includes a sensing area and a plurality of contact pads. The circuit chip includes a circuit configured to process the electrical signal and a plurality of contact pads. The substrate includes a resin sheet having an opening and a plurality of conductors within the resin sheet. The substrate is joined to both the sensor chip and circuit chip so that the sensing area of the sensor chip is to be exposed to the pressure being sensed through the opening of the resin sheet, the contact pads of the sensor chip and circuit chip are electrically connected to the conductors of the substrate, and all the contact pads and conductors are hermetically embedded in the resin sheet of the substrate.

    摘要翻译： 压力传感器主要包括传感器芯片，电路芯片和基板。 传感器芯片被配置为产生代表正在感测的压力的电信号，并且包括感测区域和多个接触焊盘。 电路芯片包括被配置为处理电信号的电路和多个接触焊盘。 基板包括在树脂片内具有开口和多个导体的树脂片。 基片连接到传感器芯片和电路芯片上，以使传感器芯片的感测区域暴露于通过树脂片的开口感测的压力，传感器芯片和电路芯片的接触垫电气 连接到基板的导体，并且所有接触焊盘和导体都气密地嵌入在基板的树脂片中。

    Pressure detecting device
    14.
    发明授权
    Pressure detecting device 有权
    压力检测装置

    公开(公告)号：US07002227B2

    公开(公告)日：2006-02-21

    申请号：US10759122

    申请日：2004-01-20

    申请人： Inao Toyoda ,  Teruo Oda ,  Seiichirou Otake ,  Hiroaki Tanaka

    发明人： Inao Toyoda ,  Teruo Oda ,  Seiichirou Otake ,  Hiroaki Tanaka

    IPC分类号： H01L29/84

    CPC分类号： G01L9/0098 ,  G01L9/0052

    摘要： A pressure detecting device includes a semiconductor substrate (30, 200, 300, 400) for outputting an electrical signal corresponding to an applied pressure received from a pressure transmitting member (20) having electrically conductive properties disposed on the front surface of the semiconductor substrate (30, 200, 300, 400). The substrate (30, 200, 300, 400) and the pressure transmitting member (20) are accommodated in a housing (10). A lead member (50) electrically independent of the housing (10) is accommodated in the housing (10) at the back surface side of the semiconductor substrate (30, 200, 300, 400), and the lead member (50) and an electrode (35b) of the substrate (30, 200, 300, 400) are electrically connected to each other through conductive adhesive material (40). The housing (10) preferably includes a first portion (101), a second portion (102) having smaller thermal conductivity than the first portion, and an electrically conductive partition portion (103).

    摘要翻译： 压力检测装置包括半导体衬底（30,200,300,400），用于输出对应于从具有设置在半导体衬底的前表面上的导电性能的压力传递部件（20）接收的施加的压力的电信号（ 30,200,300,400）。 衬底（30,200,300,400）和压力传递构件（20）容纳在壳体（10）中。 电气独立于壳体（10）的引线构件（50）在半导体衬底（30,200,300,400）的背面侧容纳在壳体（10）中，并且引线构件（50）和 基板（30,200,300,400）的电极（35b）通过导电粘合材料（40）彼此电连接。 壳体（10）优选地包括第一部分（101），具有比第一部分更小的热导率的第二部分（102）和导电分隔部分（103）。

    Pressure sensor
    15.
    发明申请
    Pressure sensor 有权
    压力传感器

    公开(公告)号：US20050269654A1

    公开(公告)日：2005-12-08

    申请号：US11137404

    申请日：2005-05-26

    申请人： Hiroaki Tanaka ,  Inao Toyoda ,  Ichiharu Kondo ,  Makoto Totani

    发明人： Hiroaki Tanaka ,  Inao Toyoda ,  Ichiharu Kondo ,  Makoto Totani

    IPC分类号： G01L9/00 ,  G01L9/04 ,  G01L9/06 ,  G01L19/06 ,  H01L29/84

    CPC分类号： G01L19/147 ,  G01L9/0054

    摘要： A pressure sensor chip includes a diaphragm and pads. A flexible printed circuit board (FPC) includes a resin sheet having a through-hole and wiring patterns that are formed within the resin sheet and sealed. The resin sheet is press-fitted to the pressure sensor chip such that the diaphragm is bared at the through-hole. The wiring patterns are connected to the pads, and junctions between the wiring patterns and the pads are sealed with the resin sheet.

    摘要翻译： 压力传感器芯片包括隔膜和垫片。 柔性印刷电路板（FPC）包括具有通孔的树脂片和形成在树脂片内并被密封的布线图案。 树脂片被压配合到压力传感器芯片，使得隔膜在通孔处露出。 布线图案连接到焊盘，并且布线图案和焊盘之间的接合部用树脂片密封。

    Pressure detecting apparatus with metallic diaphragm
    16.
    发明授权
    Pressure detecting apparatus with metallic diaphragm 有权
    带金属隔膜的压力检测装置

    公开(公告)号：US06595065B2

    公开(公告)日：2003-07-22

    申请号：US09492605

    申请日：2000-01-27

    申请人： Yukihiko Tanizawa ,  Kazuaki Hamamoto ,  Inao Toyoda ,  Hiroaki Tanaka ,  Yasutoshi Suzuki

    发明人： Yukihiko Tanizawa ,  Kazuaki Hamamoto ,  Inao Toyoda ,  Hiroaki Tanaka ,  Yasutoshi Suzuki

    IPC分类号： G01L904

    CPC分类号： G01L9/0055

    摘要： A pressure detecting apparatus has a single-crystal semiconductor sensor chip disposed on a metallic diaphragm through a low melting point glass. The sensor chip has a planar shape selected from a circular shape, a first polygonal shape having more than five sides and having interior angles all less than 180°, and a second polygonal shape having a ratio of a circumscribed circle diameter relative to an inscribed circle diameter being less than 1.2. Four strain gauge resistors are disposed on X, Y axes passing through a center point O of the sensor chip in parallel with directions. Accordingly, thermal stress is reduced not to adversely affect a detection error and simultaneously high sensitivity is provided.

    摘要翻译： 压力检测装置具有通过低熔点玻璃设置在金属隔膜上的单晶半导体传感器芯片。 传感器芯片具有选自圆形，多于五边的第一多边形和内角全部小于180°的平面形状，以及具有相对于内切圆的外接圆直径的比率的第二多边形 直径小于1.2。 四个应变计电阻器设置在X，Y轴上，与<110>方向平行地穿过传感器芯片的中心点O。 因此，热应力降低，不会不利地影响检测误差，同时提供高灵敏度。

    Semiconductor pressure sensor and manufacturing method therefof
    17.
    发明授权
    Semiconductor pressure sensor and manufacturing method therefof 有权
    半导体压力传感器及其制造方法

    公开(公告)号：US06218717B1

    公开(公告)日：2001-04-17

    申请号：US09231799

    申请日：1999-01-15

    申请人： Inao Toyoda ,  Hiroaki Tanaka ,  Noboru Endo

    发明人： Inao Toyoda ,  Hiroaki Tanaka ,  Noboru Endo

    IPC分类号： H01L2982

    CPC分类号： G01L9/0054 ,  G01L9/0042

    摘要： A semiconductor pressure sensor includes a semiconductor substrate having a diaphragm portion. A diaphragm formation region including the diaphragm portion is electrically insulated from a peripheral region therearound. Voltage is applied to the diaphragm formation region via a pad and a wire both formed on a surface of the semiconductor substrate, for fixing a potential of the diaphragm formation region when the sensor is put in an operating state. The fixed potential is set to be equal to or higher than a maximum potential of a gauge diffusion resistive layer formed in the diaphragm formation region. As a result, even when the maximum potential of the gauge diffusion resistive layer is a power supply voltage, it can be prevented that current leaks from the gauge diffusion resistive layer.

    摘要翻译： 半导体压力传感器包括具有隔膜部分的半导体基板。 包括隔膜部分的隔膜形成区域与其周边区域电绝缘。 电压通过在半导体基板的表面上形成的焊盘和导线施加到隔膜形成区域，用于在传感器处于工作状态时固定隔膜形成区域的电位。 固定电位被设定为等于或高于形成在隔膜形成区域中的量规扩散电阻层的最大电位。 结果，即使当量规扩散电阻层的最大电位是电源电压时，也可以防止电流从量规扩散电阻层泄漏。

    Semiconductor type physical quantity sensor
    18.
    发明授权
    Semiconductor type physical quantity sensor 失效
    半导体型物理量传感器

    公开(公告)号：US5986316A

    公开(公告)日：1999-11-16

    申请号：US979705

    申请日：1997-11-26

    申请人： Inao Toyoda ,  Yasutoshi Suzuki ,  Nobukazu Oba ,  Hiroaki Tanaka

    发明人： Inao Toyoda ,  Yasutoshi Suzuki ,  Nobukazu Oba ,  Hiroaki Tanaka

    IPC分类号： G01L9/00 ,  H01L29/06 ,  G01L9/06 ,  H01L41/00

    CPC分类号： G01L19/141 ,  G01L19/0084 ,  G01L19/146 ,  G01L19/147

    摘要： A diffusion gauge is formed in a surface of a silicon substrate which has a plane orientation of (110). The diffusion gauge is disposed so that a main current thereof flows along a direction perpendicular to a direction in which large stress biased in one direction generates in the surface of the silicon substrate due to distortion of a base for fixing the silicon substrate. Therefore, even when the large biased stress generates in the surface of the silicon substrate, because the direction in which the main current of the diffusion gauge flows is perpendicular to the direction in which the biased stress generates, there is a little change in a resistance value of the diffusion gauge. As a result, a detection error caused by the distortion of the base can be reduced.

    摘要翻译： 在硅衬底的具有平面取向为（110）的表面中形成扩散计。 扩散计量器被设置为使得其主电流沿着与硅衬底的表面中由于基底的变形而在一个方向上产生大的应力的方向垂直的<110>方向流动。 因此，即使在硅衬底的表面产生大的偏压应力的情况下，由于扩散计的主电流流动的<110>方向与偏压应力的方向垂直，所以有一点变化 在扩散计的电阻值中。 结果，可以减少由基座的失真引起的检测误差。

    Sensing apparatus having a sensing bridge circuit and a temperature detecting bridge circuit for detecting a physical quantity and a related temperature compensating method
    19.
    发明授权
    Sensing apparatus having a sensing bridge circuit and a temperature detecting bridge circuit for detecting a physical quantity and a related temperature compensating method 有权
    具有感测桥接电路和用于检测物理量的温度检测桥接电路和相关温度补偿方法的检测装置

    公开(公告)号：US06329825B1

    公开(公告)日：2001-12-11

    申请号：US09440886

    申请日：1999-11-16

    申请人： Hiroaki Tanaka ,  Inao Toyoda

    发明人： Hiroaki Tanaka ,  Inao Toyoda

    IPC分类号： G01R1702

    CPC分类号： G01D3/0365 ,  G01L9/065

    摘要： A pressure detecting bridge circuit produces a sensor signal Sd. A temperature detecting bridge circuit produces a temperature signal St. A reference voltage generating circuit produces a reference signal Sa. An analog multiplexer processes these signals Sd, St and Sa in a time-divisional manner. A differential amplification circuit and an A/D conversion circuit are commonly used to obtain the digital data corresponding to the sensor signal Sd, the temperature signal St and the reference signal Sa. The temperature detecting bridge circuit includes reference resistance elements. By adjusting the design resistance values of the reference resistance elements, the variation width of the sensor signal Sd in a pressure measuring range of the pressure detecting bridge circuit is substantially equalized in advance with the variation width of the temperature signal St in a temperature measuring range of the temperature detecting bridge circuit.

    摘要翻译： 压力检测桥电路产生传感器信号Sd。 温度检测桥接电路产生温度信号St.A参考电压产生电路产生参考信号Sa. 模拟多路复用器以时分方式处理这些信号Sd，St和Sa。 差分放大电路和A / D转换电路通常用于获得对应于传感器信号Sd，温度信号St和参考信号Sa.的数字数据。 温度检测桥电路包括参考电阻元件。 通过调整基准电阻元件的设计电阻值，压力检测桥电路的压力测量范围内的传感器信号Sd的变化幅度与温度测量范围内的温度信号St的变化宽度预先基本相等 的温度检测桥接电路。