公开(公告)号：US06448596B1

公开(公告)日：2002-09-10

申请号：US09928508

申请日：2001-08-14

Applicant: Kazuhiro Kawajiri ,  Takashi Miida

Inventor： Kazuhiro Kawajiri ,  Takashi Miida

IPC: H01L31062

CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L27/14623

Abstract: The present invention relates to a solid-state imaging device. More specifically, the invention relates to the solid-state imaging device, which uses a MOS image sensor of a threshold voltage modulation system used for a video camera, an electronic camera, an image input camera, a scanner, a facsimile or the like. The solid-state imaging device is constructed in a manner that pixels are arrayed in a matrix form. Each pixel includes: a photo-diode for generating photo-generated charges by light irradiation; and an insulated gate field effect transistor for light signal detection, provided adjacently to the photo-diode, for storing the photo-generated charges beneath a channel region under a gate electrode, and modulating a threshold voltage by the stored photo-generated charges to detect a light signal. The gate electrodes are disposed at at least four directions around a periphery of the photo-diode, and the photo-diodes are disposed at at least four directions around a periphery of the gate electrode.

公开(公告)号：US5008696A

公开(公告)日：1991-04-16

申请号：US216354

申请日：1988-07-07

Applicant: Takashi Miida ,  Nozomu Ozaki ,  Shigenori Baba ,  Kunimitsu Kousaka

Inventor： Takashi Miida ,  Nozomu Ozaki ,  Shigenori Baba ,  Kunimitsu Kousaka

IPC: G01J9/00 ,  G02B7/34 ,  G03B13/36

CPC classification number: G02B7/34

Abstract: A phase difference-detecting apparatus for detecting a relative distance between a pair of focused images obtained from subject luminous flux passed through an objective lens to thereby judge a focusing state of the objective lens. The apparatus includes a pair of signal generating sections which receive the subject flux and provide first and second time series signals. A switching-capacitor integrator is provided including a plurality of capacitive elements and switching elements for intermittently connecting the capacitive elements to each other, and for receiving the first and second time series signals. A control device compares the sizes of the first and second time series signals with each other to thereby generate a control signal corresponding to a relation of size between the first and second time series signals. The switching elements are controlled on the basis of the control signal to cause the switching-capacitor integrated value of an absolute value of a difference between the first and second time series signals, and to cause the switching-capacitor integrator to generate, as a correlation value, an integrated value on the basis of the first and second time series signals in predetermined numbers whenever the quantity of relative movement is changed.

公开(公告)号：US08599614B2

公开(公告)日：2013-12-03

申请号：US13203612

申请日：2009-04-30

Applicant: Takashi Miida ,  Riichiro Shirota ,  Hideki Arakawa ,  Ching Sung Yang ,  Tzung Ling Lin

Inventor： Takashi Miida ,  Riichiro Shirota ,  Hideki Arakawa ,  Ching Sung Yang ,  Tzung Ling Lin

IPC: G11C11/34

CPC classification number: G11C16/3427 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/102 ,  G11C16/3418 ,  H01L27/11524 ,  H01L27/11526

Abstract: In a programming method for a NAND flash memory device, a self-boosting scheme is used to eliminate excess electrons in the channel of an inhibit cell string that would otherwise cause programming disturb. The elimination is enabled by applying a negative voltage to word lines connected to the inhibit cell string before boosting the channel, and this leads to bringing high program immunity. A row decoder circuitry to achieve the programming operation and a file system architecture based on the programming scheme to improve the efficiency of file management are also described.

公开(公告)号：US20100200260A1

公开(公告)日：2010-08-12

申请号：US12439768

申请日：2007-09-11

Applicant: Mitsugu Mikami ,  Yoshiaki Adachi ,  Kouji Katou ,  Kigen Agehara ,  Takashi Miida

Inventor： Mitsugu Mikami ,  Yoshiaki Adachi ,  Kouji Katou ,  Kigen Agehara ,  Takashi Miida

IPC: B25B21/00 ,  B25F5/00

CPC classification number: B25B21/00 ,  B25C1/04 ,  B25C1/06 ,  B25F5/00

Abstract: A handheld tool includes a first power source, a second power source having a characteristic different from a characteristic of the first power source, and an operation part which is operated by a power from at least one of the first power source and the second power source to fasten a fastener.

Abstract translation: 手持式工具包括第一电源，具有与第一电源的特性不同的特性的第二电源，以及由第一电源和第二电源中的至少一个的功率操作的操作部 紧固紧固件。

公开(公告)号：US20100120193A1

公开(公告)日：2010-05-13

申请号：US12691704

申请日：2010-01-21

Applicant: Takashi Miida

Inventor： Takashi Miida

IPC: H01L31/18

CPC classification number: H01L31/105 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14632

Abstract: An image sensor has a substrate, a dielectric layer positioned on the substrate, a pixel array including a plurality of pixels defined on the substrate, a shield electrode positioned between any two adjacent pixel electrodes of the pixels, a photo conductive layer positioned on the shield electrode and the pixel electrodes, and a transparent conductive layer covering the photo conductive layer.

Abstract translation: 图像传感器具有衬底，位于衬底上的电介质层，包括限定在衬底上的多个像素的像素阵列，位于像素的任意两个相邻像素电极之间的屏蔽电极，位于屏蔽层上的光电导层 电极和像素电极，以及覆盖光电导层的透明导电层。

公开(公告)号：US20060108630A1

公开(公告)日：2006-05-25

申请号：US11283984

申请日：2005-11-22

Applicant: Takashi Miida

Inventor： Takashi Miida

IPC: H01L21/336 ,  H01L29/788

CPC classification number: H01L27/11521 ,  H01L27/115 ,  H01L29/42336 ,  H01L29/7887

Abstract: A semiconductor memory has plural cell transistors that are arranged in a matrix. The cell transistor comprises a P type silicon substrate, a control gate CG and a pair of electrically isolated floating gates. Plural projections are formed in the silicon substrate, and a pair of N type diffusion regions as the source and the drain is formed in both sides of the projection. The control gate extending in the row direction faces the projection and the floating gate FG1, FG2 via an insulation layer. The width W1 of the floating gate FG1, FG2 in the column direction is larger than the width W2 of the control gate CG, so the floating gate FG1, FG2 and the control gate CG can be manufactured without the self-align process.

Abstract translation: 半导体存储器具有以矩阵排列的多个单元晶体管。 单元晶体管包括P型硅衬底，控制栅极CG和一对电隔离的浮动栅极。 在硅衬底中形成多个突起，并且在突起的两侧形成作为源极和漏极的一对N型扩散区域。 在行方向上延伸的控制栅极经由绝缘层面向突起和浮置栅极FG 1，FG 2。 浮动栅极FG 1的宽度W 1，列方向上的FG 2大于控制栅极CG的宽度W 2，因此浮动栅极FG 1，FG 2和控制栅极CG可以在没有自身的情况下制造 对齐过程。

公开(公告)号：US07037782B2

公开(公告)日：2006-05-02

申请号：US10893500

申请日：2004-07-19

Applicant: Takashi Miida

Inventor： Takashi Miida

IPC: H01L21/336

CPC classification number: H01L27/11526 ,  H01L21/28273 ,  H01L27/105 ,  H01L27/11543 ,  H01L29/66825 ,  H01L29/7887

Abstract: A multiple-bit cell transistor includes a P type silicon substrate, a gate insulation layer, a pair of N type source/drain regions, a pair of tunnel insulation layers, and a pair of floating gates. The silicon substrate is formed with a projection while the floating gates each are positioned on one of opposite side walls of the projection. Inter-polycrystalline insulation layers each are formed on one of the floating gates. A control gate faces the top of the projection via the gate insulation layer. An N type region is formed on each side of the projection and contacts the source/drain region adjoining it. The cell transistor lowers a required write voltage, broadens a current window, and enhances resistance to inter-band tunneling.

Abstract translation: 多位单元晶体管包括P型硅衬底，栅极绝缘层，一对N型源极/漏极区，一对隧道绝缘层和一对浮动栅极。 硅衬底形成有突起，而浮栅各自位于突起的相对侧壁中的一个上。 多晶硅绝缘层各自形成在一个浮动栅极上。 控制门通过栅极绝缘层面向突起的顶部。 N型区域形成在突起的每一侧上，并与其邻接的源极/漏极区域接触。 单元晶体管降低了所需的写入电压，拓宽了当前窗口，并增强了对带内隧道效应的阻力。

公开(公告)号：US06950134B2

公开(公告)日：2005-09-27

申请号：US09774667

申请日：2001-02-01

Applicant: Takashi Miida

Inventor： Takashi Miida

IPC: H04N5/335 ,  H01L27/146 ,  H01L31/0352 ,  H04N3/14

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/14643 ,  H01L31/035236

Abstract: Disclosed is a method of storing optically generated charges by an optical signal in a solid state imaging device, which is particularly a method of storing optically generated charges by an optical signal in a solid state imaging device using a MOS image sensor of a threshold voltage modulation type, which is used for a video camera, an electronic camera, an image input camera, a scanner, a facsimile or the like. The method comprises the steps of preparing a solid state imaging device having a unit pixel including a photo diode 111 and a MOSFET 112, the MOSFET 112 having a carrier pocket 25 for storing optically generated charges generated in the photo diode 111, the carrier pocket 25 being provided under a channel region 15c in the vicinity of a source region 16, transferring the optically generated charges to the carrier pocket 25 and then storing them therein while maintaining the channel region 15c in an accumulation state such that the optically generated charges are not affected by interface levels in the channel region 15c.

Abstract translation: 公开了一种在固态成像装置中通过光学信号存储光学生成的电荷的方法，其特别是使用阈值电压调制的MOS图像传感器通过光信号将光学产生的电荷存储在固态成像装置中的方法 类型，其用于摄像机，电子照相机，图像输入摄像机，扫描仪，传真机等。 该方法包括以下步骤：准备具有包括光电二极管111和MOSFET112的单位像素的固态成像装置，所述MOSFET 112具有用于存储在光电二极管111中产生的光学产生的电荷的载流子袋25，载体袋25 设置在源极区域16附近的沟道区域15c的下方，将光学产生的电荷转移到载流子袋25，然后将其存储在其中，同时保持沟道区域15c处于积聚状态，使得光学产生的电荷为 不受通道区域15c中的接口电平的影响。

公开(公告)号：US06677627B2

公开(公告)日：2004-01-13

申请号：US10176195

申请日：2002-06-21

Applicant: Takashi Miida

Inventor： Takashi Miida

IPC: H01L27146

CPC classification number: H01L31/103 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14692

Abstract: A solid state imaging device includes a MOS image sensor of a threshold voltage modulation system employed in a video camera, an electronic camera, an image input camera, a scanner, a facsimile, or the like. The solid state imaging device includes a photo diode formed in a second semiconductor layer of opposite conductivity type in a first semiconductor layer of one conductivity type, and a light signal detecting insulated gate field effect transistor formed in a fourth semiconductor layer of the opposite conductivity type in a third semiconductor layer of one conductivity type adjacent to the photo diode. A carrier pocket is provided in the fourth semiconductor layer and a portion of the first semiconductor layer under the second semiconductor layer is thicker than that portion of the third semiconductor layer under the fourth semiconductor layer.

Abstract translation: 固态成像装置包括在摄像机中使用的阈值电压调制系统的MOS图像传感器，电子照相机，图像输入相机，扫描仪，传真机等。 固态成像装置包括形成在一种导电类型的第一半导体层中的具有相反导电类型的第二半导体层中的光电二极管和形成在相反导电类型的第四半导体层中的光信号检测绝缘栅场效应晶体管 在与光电二极管相邻的一种导电类型的第三半导体层中。 在第四半导体层中设置载流子袋，第二半导体层下面的第一半导体层的一部分比第四半导体层下的第三半导体层的部分厚。

公开(公告)号：US5285234A

公开(公告)日：1994-02-08

申请号：US904327

申请日：1992-06-25

Applicant: Jun Hasegawa ,  Takashi Miida

Inventor： Jun Hasegawa ,  Takashi Miida

IPC: G02B7/34 ,  C03B13/36

CPC classification number: G02B7/34

Abstract: A phase difference detecting type autofocusing device capable of selectively focusing a desired one of a plurality of subjects within a field of view, by using a simple structure. The phase difference detecting type autofocusing device includes an optical system having first and second lenses, the first and second lenses having the same focal length and disposed on a first plane with the optical axes of the lenses being set in parallel. A plurality of first photosensors are disposed on a second plane in parallel with the first plane, for converting information of images focused by the first lens into electric signals; and a plurality of second photosensors are disposed on the second plane at positions covered by the second lens, for converting information of images focused by the second lent into electric signals. Each second photosensor is spaced apart in the same direction by the same distance from a corresponding one of the plurality of first photosensors.

Abstract translation: 一种相位差检测型自动对焦装置，其能够通过使用简单的结构在视场内选择性地聚焦多个被摄体中期望的一个。 相位差检测型自动对焦装置包括具有第一透镜和第二透镜的光学系统，第一透镜和第二透镜具有相同的焦距并且设置在第一平面上，其中透镜的光轴被平行设置。 多个第一光电传感器被布置在与第一平面平行的第二平面上，用于将由第一透镜聚焦的图像的信息转换为电信号; 并且多个第二光电传感器被布置在第二平面上，在由第二透镜覆盖的位置处，用于将由第二次被聚焦的图像的信息转换为电信号。 每个第二光电传感器在相同的方向上与多个第一光电传感器中相应的一个相距一定距离。