公开(公告)号：US08476217B2

公开(公告)日：2013-07-02

申请号：US13502859

申请日：2010-10-18

申请人： Masato Nomura ,  Satoru Kijima ,  Katsuhisa Inoue ,  Tetsuaki Fukushima ,  Tomoya Sato

发明人： Masato Nomura ,  Satoru Kijima ,  Katsuhisa Inoue ,  Tetsuaki Fukushima ,  Tomoya Sato

IPC分类号： C11D1/72 ,  C11D1/722 ,  C11D1/825

CPC分类号： C11D1/722

摘要： The present invention provides the nonionic surfactant represented by the formula (1): R—O—(PO)m-(EO)n—H  (1) wherein, R represents a saturated linear-chain hydrocarbon group having 8 to 18 carbon atoms, and n-octyl groups are 20 to 80% by mole of the saturated linear-chain hydrocarbon groups, n-decyl groups are 0 to 10% by mole of the saturated linear-chain hydrocarbon groups, and saturated linear-chain hydrocarbon groups having 12 to 18 carbon atoms are 20 to 80% by mole of the saturated linear-chain hydrocarbon groups; PO represents a propyleneoxy group; EO represents an ethyleneoxy group; m represents an average addition mole number of propyleneoxy groups ranging from 0.1 to 5; n represents an average addition mole number of ethyleneoxy groups ranging from 0.5 to 20; and (PO)m and (EO)n are bonded as blocks in this order.

摘要翻译： 本发明提供由式（1）表示的非离子型表面活性剂：RO-（PO）m-（EO）nH（1）其中，R表示碳原子数8〜18的饱和直链烃基， 辛基的饱和直链烃基为20〜80摩尔％，正癸基为饱和直链烃基的0〜10摩尔％，碳原子数为12〜18的饱和直链烃基 原子为饱和直链烃基的20〜80摩尔％ PO表示丙烯氧基; EO表示乙烯氧基; m表示丙烯氧基的平均加成摩尔数为0.1〜5; n表示0.5〜20的乙烯氧基的平均加成摩尔数; 和（PO）m和（EO）n以该顺序键合。

公开(公告)号：US07566688B2

公开(公告)日：2009-07-28

申请号：US10539052

申请日：2003-12-09

申请人： Atsushi Tanaka ,  Satoru Kijima ,  Makoto Kubo

发明人： Atsushi Tanaka ,  Satoru Kijima ,  Makoto Kubo

IPC分类号： C11D3/00

CPC分类号： C11D3/3707 ,  C11D3/0036 ,  C11D3/3723

摘要： The invention provides a soil release agent and a detergent composition blended therewith. The invention relates to a crosslinked product obtained by reacting a compound having 2 to 32 hydroxyl groups, such as triethanol amine, with a compound having at least two functional groups reacting with hydroxyl groups, such as (poly)ethylene glycol diglycidyl ether, a soil release agent containing the crosslinked product, and a detergent composition containing the soil release agent.

摘要翻译： 本发明提供了一种去污剂和与其混合的洗涤剂组合物。 本发明涉及通过使具有2-32个羟基的化合物如三乙醇胺与具有至少两个与羟基反应的官能团的化合物如（聚）乙二醇二缩水甘油醚，一种土壤 含有交联产物的脱模剂，以及含有去污剂的洗涤剂组合物。

公开(公告)号：US07170643B2

公开(公告)日：2007-01-30

申请号：US09769917

申请日：2001-01-25

申请人： Noriaki Matsui ,  Nobuo Matsuoka ,  Toshio Hayashi ,  Junichi Kishimoto ,  Katsuhiro Ishido ,  Satoru Kijima

发明人： Noriaki Matsui ,  Nobuo Matsuoka ,  Toshio Hayashi ,  Junichi Kishimoto ,  Katsuhiro Ishido ,  Satoru Kijima

IPC分类号： G06K15/00 ,  G06T5/00 ,  H04N1/407 ,  H04N1/409 ,  H04N1/46

CPC分类号： H04N1/401

摘要： In an image reading apparatus having a light source for illuminating a document, an image sensing element for outputting an electrical signal in accordance with an input light quantity, a first reference member, and a second reference member, shading correction data is acquired. A time since the light source is turned on is measured, and when the measured time does not reach a predetermined time, shading correction data is acquired by a first method using the first reference member. When the predetermined time has elapsed, shading correction data is acquired by a second method using the second reference member.

摘要翻译： 在具有用于照射文件的光源的图像读取装置中，获取用于根据输入光量输出电信号的图像感测元件，第一参考构件和第二参考构件，获得阴影校正数据。 测量自光源打开以来的时间，并且当测量时间未达到预定时间时，通过使用第一参考构件的第一方法获得阴影校正数据。 当经过预定时间时，通过使用第二参考构件的第二方法来获取阴影校正数据。

公开(公告)号：US06408149B1

公开(公告)日：2002-06-18

申请号：US09589160

申请日：2000-06-08

申请人： Masayoshi Taira ,  Hiroaki Takeda ,  Takeharu Uchizono ,  Hideaki Chishima ,  Satoru Kanno ,  Masahiro Kurahashi ,  Satoru Kijima

发明人： Masayoshi Taira ,  Hiroaki Takeda ,  Takeharu Uchizono ,  Hideaki Chishima ,  Satoru Kanno ,  Masahiro Kurahashi ,  Satoru Kijima

IPC分类号： G03G1500

CPC分类号： H04N1/00885 ,  G03G15/5004 ,  H04N1/00278 ,  H04N1/00891 ,  H04N1/00896 ,  H04N1/00899 ,  H04N1/00901 ,  H04N1/00904 ,  H04N1/00925

摘要： An image processing apparatus structured by combining an image reading apparatus and an image formation apparatus with each other enables a user to freely combine these apparatuses without considering the sum of power consumption of the image reading apparatus and power consumption of the image formation apparatus. When the sum of power consumption of a reader unit and power consumption of a printer unit exceeds, e.g., 1.5 kW, the reader unit is set to be in a low power consumption mode such that the sum of power consumption becomes equal to or smaller than 1.5 kW. Even when the low power consumption mode of the least power consumption quantity is selected and the sum of power consumption still exceeds 1.5 kW, use of the apparatus is inhibited and the inhibition is displayed.

摘要翻译： 通过将图像读取装置和图像形成装置组合而构成的图像处理装置，能够在不考虑图像读取装置的耗电量和图像形成装置的耗电量的情况下自由地组合这些装置。 当读取器单元的功耗和打印机单元的功耗之和超过例如1.5kW时，读取器单元被设置为低功耗模式，使得功耗的总和等于或小于 1.5 kW。 即使选择了最低功耗量的低功耗模式，并且功耗总和仍然超过1.5kW，则禁止使用该装置并显示禁止。

公开(公告)号：US20120208738A1

公开(公告)日：2012-08-16

申请号：US13502859

申请日：2010-10-18

申请人： Masato Nomura ,  Satoru Kijima ,  Katsuhisa Inoue ,  Tetsuaki Fukushima ,  Tomoya Sato

发明人： Masato Nomura ,  Satoru Kijima ,  Katsuhisa Inoue ,  Tetsuaki Fukushima ,  Tomoya Sato

IPC分类号： C11D17/00 ,  C07C43/11 ,  C07C43/13

CPC分类号： C11D1/722

摘要： The present invention provides the nonionic surfactant represented by the formula (1): R—O-(PO)m-(EO)n-H  (1) wherein, R represents a saturated linear-chain hydrocarbon group having 8 to 18 carbon atoms, and n-octyl groups are 20 to 80% by mole of the saturated linear-chain hydrocarbon groups, n-decyl groups are 0 to 10% by mole of the saturated linear-chain hydrocarbon groups, and saturated linear-chain hydrocarbon groups having 12 to 18 carbon atoms are 20 to 80% by mole of the saturated linear-chain hydrocarbon groups; PO represents a propyleneoxy group; EO represents an ethyleneoxy group; m represents an average addition mole number of propyleneoxy groups ranging from 0.1 to 5; n represents an average addition mole number of ethyleneoxy groups ranging from 0.5 to 20; and (PO)m and (EO)n are bonded as blocks in this order.

摘要翻译： 本发明提供由式（1）表示的非离子型表面活性剂：R-O-（PO）m-（EO）nH（1）其中，R表示碳原子数8〜18的饱和直链烃基， 正辛基的饱和直链烃基为20〜80摩尔％，正癸基为饱和直链烃基为0〜10摩尔％，饱和直链烃基为12〜 18个碳原子为饱和直链烃基的20〜80摩尔％ PO表示丙烯氧基; EO表示乙烯氧基; m表示丙烯氧基的平均加成摩尔数为0.1〜5; n表示0.5〜20的乙烯氧基的平均加成摩尔数; 和（PO）m和（EO）n以该顺序键合。

公开(公告)号：US20050000407A1

公开(公告)日：2005-01-06

申请号：US10909911

申请日：2004-08-02

申请人： Motonobu Takeya ,  Katsunori Yanashima ,  Takeharu Asano ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Tomonori Hino ,  Satoru Kijima ,  Masao Ikeda

发明人： Motonobu Takeya ,  Katsunori Yanashima ,  Takeharu Asano ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Tomonori Hino ,  Satoru Kijima ,  Masao Ikeda

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01S5/02 ,  H01S5/343 ,  C30B15/00 ,  C30B21/06 ,  C30B23/00 ,  C30B25/00 ,  C30B27/02 ,  C30B28/10 ,  C30B28/12 ,  C30B28/14 ,  C30B30/04

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/0075 ,  H01S5/0207 ,  H01S5/0422 ,  H01S5/22 ,  H01S5/34333 ,  H01S2304/12

摘要： A semiconductor laser, a semiconductor device and a nitride series III-V group compound substrate capable of obtaining a crystal growth layer with less fluctuation of the crystallographic axes and capable of improving the device characteristics, as well as a manufacturing method therefor are provided. The semiconductor laser comprises, on one surface of a substrate used for growing, a plurality of spaced apart seed crystal layers and an n-side contact layer having a lateral growing region which is grown on the basis of the plurality of seed crystal layers. The seed crystal layer is formed in that a product of width w1 (unit: μm) at the boundary thereof relative to the n-side contact layer along the arranging direction A and a thickness t1 (unit: μm) along the direction of laminating the n-side contact layer is 15 or less. This can decrease the fluctuation of the crystallographic axes in the n-side contact layer. Accordingly, crystallinity of the semiconductor layer including from n-type clad layer to a p-side contact layer laminated on the n-side contact layer is improved. A semiconductor laser and a semiconductor device capable of decreasing dislocation density and improving device characteristics, as well as a manufacturing method therefor are provided. A semiconductor layer comprising a nitride series III-V group compound semiconductor is laminated on a substrate 11 comprising an n-type GaN. Protruded seed crystal portions are formed and a growth suppression layer having an opening corresponding to the seed crystal portion is disposed to the substrate. The semiconductor layer grows on the basis of the seed crystal portion and has a lateral growing region of low dislocation density. When a current injection region is disposed corresponding to the lateral growing region, the light emission efficiency can be improved. Further, when the growth suppression layer is provided with a function of reflecting or absorbing light generated in the semiconductor layer, it is possible to prevent leakage of light or intrusion of stray light from the substrate to suppress generation of noises.

公开(公告)号：US06801670B2

公开(公告)日：2004-10-05

申请号：US09841985

申请日：2001-04-25

申请人： Satoru Kijima ,  Tsunao Honbo ,  Shigeo Aoyagi

发明人： Satoru Kijima ,  Tsunao Honbo ,  Shigeo Aoyagi

IPC分类号： G06K940

CPC分类号： G06T5/008 ,  H04N1/401 ,  H04N1/4097

摘要： Shading correction data used in an image reading apparatus for shading-correcting image data obtained by reading an original image by a line sensor is acquired. A defect position on a white reference plate and a defect correction coefficient for correcting shading correction data at this defect position are obtained, and the shading correction data at the defect position is corrected by using the defect correction coefficient. Shading correction is performed by using the corrected shading correction data.

摘要翻译： 获取用于通过线传感器读取原始图像获得的阴影校正图像数据的图像读取装置中使用的阴影校正数据。 获得白色基准板上的缺陷位置和用于校正该缺陷位置的阴影校正数据的缺陷校正系数，并且通过使用缺陷校正系数校正缺陷位置处的阴影校正数据。 通过使用校正的阴影校正数据来执行阴影校正。

公开(公告)号：US06682991B1

公开(公告)日：2004-01-27

申请号：US09448584

申请日：1999-11-24

申请人： Tomonori Hino ,  Takeharu Asano ,  Tsunenori Asatsuma ,  Satoru Kijima ,  Kenji Funato ,  Shigetaka Tomiya

发明人： Tomonori Hino ,  Takeharu Asano ,  Tsunenori Asatsuma ,  Satoru Kijima ,  Kenji Funato ,  Shigetaka Tomiya

IPC分类号： H01L2120

CPC分类号： H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0332 ,  H01S5/2077 ,  H01S5/32341

摘要： When making a growth mask on a substrate and using the growth mask to selectively grow nitride III-V compound semiconductors on the substrate, a multi-layered film including a nitride forming at least its top surface is used as the growth mask. The growth mask may be combination of an oxide film and a nitride film thereon, combination of a metal film and a nitride film thereon, combination of an oxide film, a film thereon made up of a nitride and an oxide, and a nitride film thereon, or combination of a first metal film, a second metal film thereon different from the first metal film and a nitride film thereon, for example. The oxide film may be a Si02, for example, the nitride film may be a TiN film or a SiN film, the film made up of a nitride and an oxide may be a SiNO film, and the metal film may be a Ti film or a Pt film, for example.

摘要翻译： 当在衬底上制造生长掩模并且使用生长掩模在衬底上选择性地生长氮化物III-V化合物半导体时，使用包括至少形成其顶表面的氮化物的多层膜作为生长掩模。 生长掩模可以是其上的氧化物膜和氮化物膜的组合，其上的金属膜和氮化物膜的组合，氧化物膜，由氮化物和氧化物组成的膜以及氮化物膜上的氮化物膜的组合 ，或第一金属膜，与第一金属膜不同的第二金属膜和其上的氮化物膜的组合。 氧化膜可以是SiO 2，例如，氮化膜可以是TiN膜或SiN膜，由氮化物和氧化物构成的膜可以是SiNO膜，并且金属膜可以是Ti膜或 例如Pt膜。

公开(公告)号：US06206962B1

公开(公告)日：2001-03-27

申请号：US09178749

申请日：1998-10-27

申请人： Satoru Kijima ,  Hiroyuki Okuyama

发明人： Satoru Kijima ,  Hiroyuki Okuyama

IPC分类号： C30B2300

CPC分类号： H01L33/28 ,  H01L21/02395 ,  H01L21/02474 ,  H01L21/02477 ,  H01L21/02485 ,  H01L21/02507 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631

摘要： An n-type cladding layer, the first guiding layer, an active layer, the second guiding layer, a p-type cladding layer, a backing layer, a contact layer, a superlattice layer and a cap layer are stacked in this order on an n-type substrate. The cap layer comprises p-type ZnTe and has a thickness of less than 10 nm. The contact layer is comprised of p-type ZnSe and the concentration of nitrogen added to the contact layer is in the range of 1 to 2×1018 cm−3. The backing layer comprises p-type ZnSSe mixed crystal and the concentration of nitrogen added to the backing layer is higher than that of the contact layer, in the range of 1 to 3×1018 cm−3. Before the corresponding Group II-VI compound semiconductor layers are grown by the MBE method, the temperature of cells is once increased. The operating voltage of the semiconductor light emitting device can be lowered by increasing the carrier concentrations of the Group II-VI compound semiconductor layers between the p-side electrode and the p-type cladding layer.

摘要翻译： 将n型包覆层，第一引导层，有源层，第二引导层，p型覆层，背衬层，接触层，超晶格层和覆盖层依次堆叠在 n型衬底。 盖层包括p型ZnTe，其厚度小于10nm。 接触层由p型ZnSe组成，并且加入到接触层中的氮浓度在1至2×10 18 cm -3的范围内。 背衬层包括p型ZnSSe混合晶体，添加到背衬层中的氮浓度高于接触层的浓度，范围为1至3×10 18 cm -3。 在通过MBE法生长相应的II-VI族化合物半导体层之前，电池的温度一度增加。 通过增加p侧电极和p型覆层之间的II-VI族化合物半导体层的载流子浓度，能够降低半导体发光元件的工作电压。

公开(公告)号：US20060252665A1

公开(公告)日：2006-11-09

申请号：US10539052

申请日：2003-12-09

申请人： Atsushi Tanaka ,  Satoru Kijima ,  Makoto Kubo

发明人： Atsushi Tanaka ,  Satoru Kijima ,  Makoto Kubo

IPC分类号： C11D17/08 ,  C11D1/72

CPC分类号： C11D3/3707 ,  C11D3/0036 ,  C11D3/3723

摘要： The invention provides a soil release agent and a detergent composition blended therewith. The invention relates to a crosslinked product obtained by reacting a compound having 2 to 32 hydroxyl groups, such as triethanol amine, with a compound having at least two functional groups reacting with hydroxyl groups, such as (poly)ethylene glycol diglycidyl ether, a soil release agent containing the crosslinked product, and a detergent composition containing the soil release agent.