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    High band gap contact layer in inverted metamorphic multijunction solar cells
    11.
    发明申请
    High band gap contact layer in inverted metamorphic multijunction solar cells 审中-公开
    倒置变质多结太阳能电池高带隙接触层

    公开(公告)号：US20100012174A1

    公开(公告)日：2010-01-21

    申请号：US12218558

    申请日：2008-07-16

    Applicant: Tansen Varghese ,  Mark A. Stan ,  Arthur Cornfeld ,  Fred Newman ,  Allen A. Gray

    Inventor： Tansen Varghese ,  Mark A. Stan ,  Arthur Cornfeld ,  Fred Newman ,  Allen A. Gray

    IPC: H01L31/00 ,  H01L21/306 ,  H01L21/02

    CPC classification number: H01L31/06875 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02538 ,  H01L31/078 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

    Abstract: A method of forming a multijunction solar cell including an upper subcell, a middle subcell, and a lower subcell by providing a substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a graded interlayer over the second subcell, the graded interlayer having a third band gap greater than the second band gap; forming a third solar subcell over the graded interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell; and forming a contact layer over the third subcell having a fifth band gap greater than at least the magnitude of the second band gap.

    Abstract translation: 一种通过提供用于半导体材料的外延生长的衬底来形成包括上部子电池，中间子电池和下部子电池的多结太阳能电池的方法; 在具有第一带隙的基板上形成第一太阳能子电池; 在所述第一太阳能子电池上形成具有小于所述第一带隙的第二带隙的第二太阳能子电池; 在所述第二子电池上形成渐变中间层，所述渐变中间层具有大于所述第二带隙的第三带隙; 在所述渐变中间层上形成具有小于所述第二带隙的第四带隙的第三太阳能子电池，使得所述第三子电池相对于所述第二子电池晶格失配; 以及在第三子电池上形成具有大于至少第二带隙的幅度的第五带隙的接触层。

    Epitaxial lift off in inverted metamorphic multijunction solar cells
    13.
    发明授权
    Epitaxial lift off in inverted metamorphic multijunction solar cells 有权
    倒置变质多结太阳能电池外延提升

    公开(公告)号：US08778199B2

    公开(公告)日：2014-07-15

    申请号：US13465477

    申请日：2012-05-07

    Applicant: Arthur Cornfeld ,  Daniel McGlynn ,  Tansen Varghese

    Inventor： Arthur Cornfeld ,  Daniel McGlynn ,  Tansen Varghese

    IPC: B29D11/00 ,  H01L31/0735 ,  H01L31/0725 ,  H01L31/18 ,  H01L31/0687

    CPC classification number: H01L31/1844 ,  H01L31/06875 ,  H01L31/0725 ,  H01L31/0735 ,  Y02E10/544 ,  Y02P70/521

    Abstract: The present disclosure provides a process for manufacturing a solar cell by selectively freeing an epitaxial layer from a single crystal substrate upon which it was grown. In some embodiments the process includes, among other things, providing a first substrate; depositing a separation layer on said first substrate; depositing on said separation layer a sequence of layers of semiconductor material forming a solar cell; mounting and bonding a flexible support on top of the sequence of layers; etching said separation layer while applying an agitating action to the etchant solution so as to remove said flexible support with said epitaxial layer from said first substrate.

    Abstract translation: 本公开提供了一种通过从其生长的单晶衬底选择性地释放外延层来制造太阳能电池的方法。 在一些实施例中，该方法尤其包括提供第一基底; 在所述第一衬底上沉积分离层; 在所述分离层上沉积形成太阳能电池的半导体材料层序列; 将柔性支撑件安装并粘合在层序列之上; 蚀刻所述分离层，同时向蚀刻剂溶液施加搅拌作用，以便从所述第一基底上除去所述外延层的所述柔性载体。

    GRID DESIGN FOR III-V COMPOUND SEMICONDUCTOR CELL
    14.
    发明申请
    GRID DESIGN FOR III-V COMPOUND SEMICONDUCTOR CELL 审中-公开
    III-V化合物半导体电池的网格设计

    公开(公告)号：US20120285519A1

    公开(公告)日：2012-11-15

    申请号：US13104451

    申请日：2011-05-10

    Applicant: Richard W. Hoffman, JR. ,  Pravin Patel ,  Tansen Varghese

    Inventor： Richard W. Hoffman, JR. ,  Pravin Patel ,  Tansen Varghese

    IPC: H01L31/06

    CPC classification number: H01L31/078 ,  H01L31/022425 ,  H01L31/022433 ,  H01L31/0693 ,  Y02E10/544 ,  Y02P70/521

    Abstract: A photovoltaic solar cell for producing energy from the sun including a germanium substrate including a first photoactive junction and forming a bottom solar subcell; a gallium arsenide middle cell disposed on said substrate; an indium gallium phosphide top cell disposed over the middle cell; and a surface grid including a plurality of spaced apart grid lines, wherein the grid lines have a thickness greater than 7 microns, and each grid line has a cross-section in the shape of a trapezoid with a cross-sectional area between 45 and 55 square microns.

    Abstract translation: 一种用于从太阳生成能量的光伏太阳能电池，其包括包含第一光活性连接点并形成底部太阳能子电池的锗衬底; 设置在所述衬底上的砷化镓中间电池; 设置在中间电池上方的磷化铟镓顶电池; 以及包括多个间隔开的网格线的表面网格，其中网格线具有大于7微米的厚度，并且每个网格线具有梯形形状的横截面，横截面积在45和55之间 平方微米。

    Wafer level interconnection of inverted metamorphic multijunction solar cells
    15.
    发明授权
    Wafer level interconnection of inverted metamorphic multijunction solar cells 有权
    倒置变质多结太阳能电池晶圆级互连

    公开(公告)号：US08263853B2

    公开(公告)日：2012-09-11

    申请号：US12187477

    申请日：2008-08-07

    Applicant: Tansen Varghese

    Inventor： Tansen Varghese

    IPC: H01L31/00 ,  H01L31/042 ,  H01L21/302

    CPC classification number: H01L31/078 ,  H01L27/1421 ,  H01L31/0475 ,  H01L31/048 ,  H01L31/0504 ,  H01L31/0508 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/1892 ,  Y02E10/544

    Abstract: A method of forming a plurality of discrete, interconnected solar cells mounted on a carrier by providing a first semiconductor substrate; depositing on the first substrate a sequence of layers of semiconductor material forming a solar cell structure; forming a metal back contact layer over the solar cell structure; mounting a carrier on top of the metal back contact; removing the first substrate; and lithographically patterning and etching the solar cell structure to form a plurality of discrete solar cells mounted on the carrier.

    Abstract translation: 一种通过提供第一半导体衬底形成安装在载体上的多个分立的互连太阳能电池的方法; 在第一衬底上沉积形成太阳能电池结构的半导体材料层序列; 在所述太阳能电池结构上形成金属背接触层; 将载体安装在金属背接触件的顶部; 去除第一衬底; 并且光刻地图案化和蚀刻太阳能电池结构以形成安装在载体上的多个分立的太阳能电池。

    Growth substrates for inverted metamorphic multijunction solar cells
    16.
    发明授权
    Growth substrates for inverted metamorphic multijunction solar cells 有权
    倒置变质多结太阳能电池的生长衬底

    公开(公告)号：US07785989B2

    公开(公告)日：2010-08-31

    申请号：US12337014

    申请日：2008-12-17

    Applicant: Paul R. Sharps ,  Arthur Cornfeld ,  Tansen Varghese ,  Fred Newman ,  Jacqueline Diaz

    Inventor： Paul R. Sharps ,  Arthur Cornfeld ,  Tansen Varghese ,  Fred Newman ,  Jacqueline Diaz

    IPC: H01L21/30 ,  H01L21/46

    CPC classification number: H01L29/045 ,  H01L31/0392 ,  H01L31/06875 ,  H01L31/0735 ,  H01L31/078 ,  H01L31/1844 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S438/977

    Abstract: A method of manufacturing a solar cell by providing a gallium arsenide carrier with a prepared bonding surface; providing a sapphire substrate; bonding the gallium arsenide carrier and the sapphire substrate to produce a composite structure; detaching the bulk of the gallium arsenide carrier from the composite structure, leaving a gallium arsenide growth substrate on the sapphire substrate; and depositing a sequence of layers of semiconductor material forming a solar cell on the growth substrate. For some solar cells, the method further includes mounting a surrogate second substrate on top of the sequence of layers of semiconductor material forming a solar cell; and removing the growth substrate.

    Abstract translation: 一种制造太阳能电池的方法，其通过提供具有制备的接合表面的砷化镓载体; 提供蓝宝石衬底; 键合砷化镓载体和蓝宝石衬底以产生复合结构; 从复合结构中分离大部分砷化镓载体，在蓝宝石衬底上留下砷化镓生长衬底; 以及在生长衬底上沉积形成太阳能电池的半导体材料层序列。 对于一些太阳能电池，该方法还包括将替代第二衬底安装在形成太阳能电池的半导体材料层序列之上; 并除去生长底物。

    WAFER LEVEL INTERCONNECTION OF INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELLS
    20.
    发明申请
    WAFER LEVEL INTERCONNECTION OF INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELLS 有权
    反相金属多功能太阳能电池的波形水平互连

    公开(公告)号：US20130014803A1

    公开(公告)日：2013-01-17

    申请号：US13560663

    申请日：2012-07-27

    Applicant: Tansen Varghese

    Inventor： Tansen Varghese

    IPC: H01L31/042 ,  H01L31/18

    CPC classification number: H01L31/078 ,  H01L27/1421 ,  H01L31/0475 ,  H01L31/048 ,  H01L31/0504 ,  H01L31/0508 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/1892 ,  Y02E10/544

    Abstract: A method of forming a plurality of discrete, interconnected solar cells mounted on a carrier by providing a first semiconductor substrate; depositing on the first substrate a sequence of layers of semiconductor material forming a solar cell structure; forming a metal back contact layer over the solar cell structure; mounting a carrier on top of the metal back contact; removing the first substrate; and lithographically patterning and etching the solar cell structure to form a plurality of discrete solar cells mounted on the carrier.

    Abstract translation: 一种通过提供第一半导体衬底形成安装在载体上的多个分立的互连太阳能电池的方法; 在第一衬底上沉积形成太阳能电池结构的半导体材料层序列; 在所述太阳能电池结构上形成金属背接触层; 将载体安装在金属背接触件的顶部; 去除第一衬底; 并且光刻地图案化和蚀刻太阳能电池结构以形成安装在载体上的多个分立的太阳能电池。

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