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    NON-VOLATILE MEMORY DEVICE, METHODS OF FABRICATING AND OPERATING THE SAME
    11.
    发明申请
    NON-VOLATILE MEMORY DEVICE, METHODS OF FABRICATING AND OPERATING THE SAME 失效
    非易失性存储器件，其制造和操作方法

    公开(公告)号：US20100289071A1

    公开(公告)日：2010-11-18

    申请号：US12844234

    申请日：2010-07-27

    申请人： Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

    发明人： Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

    IPC分类号： H01L29/788

    CPC分类号： H01L27/11521 ,  G11C16/0425 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/42328

    摘要： A non-volatile memory device includes a floating gate formed on a substrate with a gate insulation layer interposed therebetween, a tunnel insulation layer formed on the floating gate, a select gate electrode inducing charge introduction through the gate insulation layer, and a control gate electrode inducing charge tunneling occurring through the tunnel insulation layer. The select gate electrode is insulated from the control gate electrode. According to the non-volatile memory device, a select gate electrode and a control gate electrode are formed on a floating gate, and thus a voltage is applied to the respective gate electrodes to write and erase data.

    摘要翻译： 非易失性存储器件包括形成在衬底上的栅极绝缘层之间的浮置栅极，形成在浮置栅极上的隧道绝缘层，通过栅极绝缘层引入电荷的选择栅极电极和控制栅电极 通过隧道绝缘层引起电荷隧穿。 选择栅电极与控制栅电极绝缘。 根据非易失性存储器件，在浮动栅极上形成选择栅电极和控制栅电极，从而向相应的栅电极施加电压以写入和擦除数据。

    Methods of operating non-volatile memory device
    12.
    发明授权
    Methods of operating non-volatile memory device 失效
    操作非易失性存储器件的方法

    公开(公告)号：US07791951B2

    公开(公告)日：2010-09-07

    申请号：US12364570

    申请日：2009-02-03

    申请人： Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

    发明人： Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

    IPC分类号： G11C11/34

    CPC分类号： H01L27/11521 ,  G11C16/0425 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/42328

    摘要： A non-volatile memory device includes a floating gate formed on a substrate with a gate insulation layer interposed therebetween, a tunnel insulation layer formed on the floating gate, a select gate electrode inducing charge introduction through the gate insulation layer, and a control gate electrode inducing charge tunneling occurring through the tunnel insulation layer. The select gate electrode is insulated from the control gate electrode. According to the non-volatile memory device, a select gate electrode and a control gate electrode are formed on a floating gate, and thus a voltage is applied to the respective gate electrodes to write and erase data.

    摘要翻译： 非易失性存储器件包括形成在衬底上的栅极绝缘层之间的浮置栅极，形成在浮置栅极上的隧道绝缘层，通过栅极绝缘层引入电荷的选择栅极电极和控制栅电极 通过隧道绝缘层引起电荷隧穿。 选择栅电极与控制栅电极绝缘。 根据非易失性存储器件，在浮动栅极上形成选择栅电极和控制栅电极，从而向相应的栅电极施加电压以写入和擦除数据。

    NON-VOLATILE MEMORY DEVICE, METHODS OF FABRICATING AND OPERATING THE SAME
    13.
    发明申请
    NON-VOLATILE MEMORY DEVICE, METHODS OF FABRICATING AND OPERATING THE SAME 失效
    非易失性存储器件，其制造和操作方法

    公开(公告)号：US20090141562A1

    公开(公告)日：2009-06-04

    申请号：US12364570

    申请日：2009-02-03

    申请人： Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

    发明人： Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

    IPC分类号： G11C16/06 ,  G11C11/34

    CPC分类号： H01L27/11521 ,  G11C16/0425 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/42328

    摘要： A non-volatile memory device includes a floating gate formed on a substrate with a gate insulation layer interposed therebetween, a tunnel insulation layer formed on the floating gate, a select gate electrode inducing charge introduction through the gate insulation layer, and a control gate electrode inducing charge tunneling occurring through the tunnel insulation layer. The select gate electrode is insulated from the control gate electrode. According to the non-volatile memory device, a select gate electrode and a control gate electrode are formed on a floating gate, and thus a voltage is applied to the respective gate electrodes to write and erase data.

    摘要翻译： 非易失性存储器件包括形成在衬底上的栅极绝缘层之间的浮置栅极，形成在浮置栅极上的隧道绝缘层，通过栅极绝缘层引入电荷的选择栅极电极和控制栅电极 通过隧道绝缘层引起电荷隧穿。 选择栅电极与控制栅电极绝缘。 根据非易失性存储器件，在浮动栅极上形成选择栅电极和控制栅电极，从而向相应的栅电极施加电压以写入和擦除数据。

    SPLIT GATE TYPE NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    14.
    发明申请
    SPLIT GATE TYPE NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
    分离门型非易失性存储器件及其制造方法

    公开(公告)号：US20080318406A1

    公开(公告)日：2008-12-25

    申请号：US12194202

    申请日：2008-08-19

    申请人： Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

    发明人： Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

    IPC分类号： H01L21/3205

    CPC分类号： H01L29/7881 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42324

    摘要： In a split gate type nonvolatile memory device and a method of fabricating the same. A supplementary layer pattern is disposed on a source region of a semiconductor substrate. Since the source region is vertically extended by virtue of the presence of the supplementary layer pattern, it is therefore possible to increase an area of a region where a floating gate overlaps the source region and the supplementary layer pattern. Accordingly, the capacitance of a capacitor formed between the source and the floating gate increases so that it is possible for the nonvolatile memory device to perform program/erase operations at a low voltage level.

    摘要翻译： 在分闸式非易失存储器件及其制造方法中， 辅助层图案设置在半导体衬底的源极区域上。 由于源区域由于存在辅助层图案而垂直延伸，因此可以增加浮置栅极与源区域和辅助层图案重叠的区域的面积。 因此，形成在源极和浮置栅极之间的电容器的电容增加，使得非易失性存储器件可以在低电压电平下执行编程/擦除操作。

    Methods of forming split-gate non-volatile memory cells including raised oxide layers on field oxide regions
    15.
    发明授权
    Methods of forming split-gate non-volatile memory cells including raised oxide layers on field oxide regions 失效
    在场氧化物区域上形成包括凸起的氧化物层的分裂非晶体非易失性存储单元的方法

    公开(公告)号：US07351636B2

    公开(公告)日：2008-04-01

    申请号：US11138702

    申请日：2005-05-26

    申请人： Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

    发明人： Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

    IPC分类号： H01L21/336

    CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L29/7885

    摘要： A method of forming a split-gate non-volatile memory cell can include forming first and second adjacent floating gates self-aligned to a field oxide region therebetween. An oxide layer is formed covering the first and second adjacent floating gates and the field oxide region, the oxide layer electrically isolates the first and second adjacent floating gates from one another. A control gate is formed on the oxide layer on the first and second adjacent floating gates. Related devices are also disclosed.

    摘要翻译： 形成分闸非易失性存储单元的方法可以包括形成与其之间的场氧化物区域自对准的第一和第二相邻浮置栅极。 形成覆盖第一和第二相邻浮动栅极和场氧化物区域的氧化物层，氧化物层将第一和第二相邻浮栅彼此电隔离。 控制栅极形成在第一和第二相邻浮动栅极上的氧化物层上。 还公开了相关设备。

    Nonvolatile memory device and method of fabricating the same
    19.
    发明授权
    Nonvolatile memory device and method of fabricating the same 失效
    非易失性存储器件及其制造方法

    公开(公告)号：US07642593B2

    公开(公告)日：2010-01-05

    申请号：US11698658

    申请日：2007-01-26

    申请人： Yong-Suk Choi ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Yong-Tae Kim ,  Seung-Jin Yang ,  Hyok-Ki Kwon

    发明人： Yong-Suk Choi ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Yong-Tae Kim ,  Seung-Jin Yang ,  Hyok-Ki Kwon

    IPC分类号： H01L21/336

    CPC分类号： H01L29/42336 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/7881

    摘要： a nonvolatile memory device Includes an active region defined in a semiconductor substrate and a control gate electrode crossing over the active region. A gate insulating layer is interposed between the control gate electrode and the active reigon. A floating gate is formed in the active region to penetrate the control gate electrode and extend to a predetermined depth into the semiconductor substrate. A tunnel insulating layer is successively interposed between the control gate electrode and the floating gate, and between the semiconductor substrate and the floating gate. The floating gate may be formed after a trench is formed by sequentially etching a control gate conductive layer and the semiconductor substrate, and a tunnel insulating layer is formed on the trench and sidewalls of the control gate conductive layer. The floating gate is formed in the trench to extend into a predetermined depth into the semiconductor substrate.

    摘要翻译： 非易失性存储器件包括限定在半导体衬底中的有源区和跨越有源区的控制栅电极。 栅极绝缘层介于控制栅极电极和活性电极之间。 在有源区中形成浮栅，以穿透控制栅电极并延伸到预定深度进入半导体衬底。 隧道绝缘层被连续插入在控制栅电极和浮栅之间以及半导体衬底和浮栅之间。 可以在通过顺序蚀刻控制栅极导电层和半导体衬底形成沟槽之后形成浮置栅极，并且在控制栅极导电层的沟槽和侧壁上形成隧道绝缘层。 浮动栅极形成在沟槽中，以延伸到预定深度进入半导体衬底。

    Non-volatile memory device with a select gate electrode and a control gate electrode formed on a floating gate
    20.
    发明授权
    Non-volatile memory device with a select gate electrode and a control gate electrode formed on a floating gate 失效
    具有选择栅电极和形成在浮栅上的控制栅电极的非易失性存储器件

    公开(公告)号：US07492002B2

    公开(公告)日：2009-02-17

    申请号：US11323355

    申请日：2005-12-30

    申请人： Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

    发明人： Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

    IPC分类号： H01L29/788

    CPC分类号： H01L27/11521 ,  G11C16/0425 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/42328

    摘要： A non-volatile memory device includes a floating gate formed on a substrate with a gate insulation layer interposed therebetween, a tunnel insulation layer formed on the floating gate, a select gate electrode inducing charge introduction through the gate insulation layer, and a control gate electrode inducing charge tunneling occurring through the tunnel insulation layer. The select gate electrode is insulated from the control gate electrode. According to the non-volatile memory device, a select gate electrode and a control gate electrode are formed on a floating gate, and thus a voltage is applied to the respective gate electrodes to write and erase data.

    摘要翻译： 非易失性存储器件包括形成在衬底上的栅极绝缘层之间的浮置栅极，形成在浮置栅极上的隧道绝缘层，通过栅极绝缘层引入电荷的选择栅极电极和控制栅电极 通过隧道绝缘层引起电荷隧穿。 选择栅电极与控制栅电极绝缘。 根据非易失性存储器件，在浮动栅极上形成选择栅电极和控制栅电极，从而向相应的栅电极施加电压以写入和擦除数据。